JPS6130259U - Pressure contact type semiconductor device - Google Patents
Pressure contact type semiconductor deviceInfo
- Publication number
- JPS6130259U JPS6130259U JP11433384U JP11433384U JPS6130259U JP S6130259 U JPS6130259 U JP S6130259U JP 11433384 U JP11433384 U JP 11433384U JP 11433384 U JP11433384 U JP 11433384U JP S6130259 U JPS6130259 U JP S6130259U
- Authority
- JP
- Japan
- Prior art keywords
- contact
- conductor
- gate electrode
- auxiliary
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図ａは本考案の一実施例を示す断面図、第１図ｂは
圧接される半導体素子の断面図、第２図ａ， ｂはとも
に第１図ａの要部を説明する構成図、第３図ａはゲート
ターンオフサイリスタのゲートドライブ回路の一例を示
す回路図、第３図ｂは第３図ａの回路を説明する為の電
流、宣圧特性図である。
１３０・・・凹部、１３１・・・鍔部、１３２・・・切
欠き溝、２０１・・・増幅ゲート形ＧＴ０， ２ ０
３・・・補助ゲート電極、２０４・・・補助カソード電
極、２０５・・・主ゲート電極、２０６・・・主カソー
ド電極、２０７・・・カソート銅ポスト、２０９・・・
圧接ゲート導体、２１０・・・ゲート引出し薄片導体、
２１１・・・絶縁ポストガイドリング、２１２・・・コ
イルバネ、２１３・・・内周圧接リング、２１４・・・
橋絡リング、２１５・・・内周絶縁ポストガイドリング
、２１６・・・内周皿バネ、２１７・・・外周圧接リン
グ、２１８・・・外周絶縁ポストガイドリング、２１９
・・・外周皿バネ、２２０・・・外周補助カソードリン
グ、２２１・・・第１保護素子、２２２・・・第２保護
素子、２２３・・・外部ケート電極部、２２４・・・ア
ノード銅ポスト。FIG. 1a is a sectional view showing an embodiment of the present invention, FIG. 1b is a sectional view of a semiconductor element to be pressure-welded, and FIGS. 2a and 2b are configuration diagrams illustrating the main parts of FIG. 1a. , FIG. 3a is a circuit diagram showing an example of a gate drive circuit of a gate turn-off thyristor, and FIG. 3b is a current and voltage characteristic diagram for explaining the circuit of FIG. 3a. 130... Concave portion, 131... Flange portion, 132... Notch groove, 201... Amplification gate type GT0, 2 0
3... Auxiliary gate electrode, 204... Auxiliary cathode electrode, 205... Main gate electrode, 206... Main cathode electrode, 207... Cathode copper post, 209...
Pressure contact gate conductor, 210... gate drawer thin piece conductor,
211... Insulating post guide ring, 212... Coil spring, 213... Inner circumference pressure contact ring, 214...
Bridging ring, 215... Inner circumference insulating post guide ring, 216... Inner circumference disc spring, 217... Outer circumference pressure contact ring, 218... Outer circumference insulating post guide ring, 219
... Outer disk spring, 220 ... Outer auxiliary cathode ring, 221 ... First protection element, 222 ... Second protection element, 223 ... External cat electrode section, 224 ... Anode copper post .
Claims (1)
よび補助カソード電極、これら電極から所定距離隔てた
前記ウエハの外周部表面に設けられた主ゲート電極およ
び主カソード電極とを有して成る半導体素子と、導電性
を有し前記半導体素子のアノードに配設されるアノード
圧接板茎、導電性を有し前記半導体素子の主カソード電
極に配設されるカソード圧接板とを備え、これら圧接板
により前記半導体素子を所要の圧力で圧接して成る圧接
形半導体装置において、前記カソ一ド圧接板の前記補助
ゲート電極および補助カソード電極に対向する部位に凹
部を設け、前記カソード圧接板の前記主ゲート電極に対
向する部位に鍔部を設け、前記カソード圧接板に前記凹
部と鍔部を連通する通路を形成し、前記凹部および鍔部
に、一端が前記補助ゲート電極に接触されるとともに他
端が前記通路を介して外部に引き出される第１の導体と
、一方が前記補助カソ一ド電極に接触されるとともに他
方が前記通路を介して前記主ゲート電極に接触される第
２の導体とを配設し、前記凹部に、前記第１の導体の一
端を前記補助ゲート電極に圧接せしめる第１の弾性体と
、前記第２の導体の一方を前記補助カソード電極に圧接
せしめる第２の弾性体とを収納し、前記鍔部に、前記第
２の導体の他方を前記主ゲート電極に圧接せしめる第３
の弾性体と、一端が前記第１の導体に接続されるととも
に他端が前記第２の導体に接続される前記半導体素子保
護用の第１保護素子と、一端が前記第２の導体に接続さ
れるとともに他端が前記カンード圧接板に接続される前
記半導体素子保護用の第２保護素子とを収納したことを
特徴とする圧接形半導体装置。A semiconductor device comprising an auxiliary gate electrode and an auxiliary cathode electrode provided on the central surface of the same wafer, and a main gate electrode and main cathode electrode provided on the outer peripheral surface of the wafer at a predetermined distance from these electrodes. an anode press-contact plate having conductivity and disposed on the anode of the semiconductor element; and a cathode press-contact plate having conductivity and disposed on the main cathode electrode of the semiconductor element; In the press-contact type semiconductor device in which the semiconductor element is press-contacted with a predetermined pressure, a recess is provided in a portion of the cathode press-contact plate facing the auxiliary gate electrode and the auxiliary cathode electrode, and the main gate of the cathode press-contact plate is provided with a recessed portion. A flange is provided at a portion facing the electrode, a passage is formed in the cathode press plate to communicate the recess and the flange, and the recess and the flange have one end in contact with the auxiliary gate electrode and the other end in contact with the auxiliary gate electrode. A first conductor led out to the outside via the passage, and a second conductor, one of which is brought into contact with the auxiliary cathode electrode and the other of which is brought into contact with the main gate electrode through the passage. a first elastic body that brings one end of the first conductor into pressure contact with the auxiliary gate electrode; and a second elastic body that brings one end of the second conductor into pressure contact with the auxiliary cathode electrode. and a third conductor that presses the other of the second conductors into contact with the main gate electrode in the collar portion.
a first protection element for protecting the semiconductor element, one end of which is connected to the first conductor and the other end of which is connected to the second conductor; and one end of which is connected to the second conductor. and a second protection element for protecting the semiconductor element, the other end of which is connected to the cando pressure contact plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11433384U JPS6130259U (en) | 1984-07-27 | 1984-07-27 | Pressure contact type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11433384U JPS6130259U (en) | 1984-07-27 | 1984-07-27 | Pressure contact type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6130259U true JPS6130259U (en) | 1986-02-24 |
| JPH0328519Y2 JPH0328519Y2 (en) | 1991-06-19 |
Family
ID=30673354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11433384U Granted JPS6130259U (en) | 1984-07-27 | 1984-07-27 | Pressure contact type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6130259U (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5046075A (en) * | 1973-08-28 | 1975-04-24 | ||
| JPS5080781A (en) * | 1973-11-13 | 1975-07-01 | ||
| JPS5242070U (en) * | 1975-09-19 | 1977-03-25 | ||
| JPS58127376A (en) * | 1982-01-25 | 1983-07-29 | Fuji Electric Corp Res & Dev Ltd | Gto thyristor |
| JPS599560U (en) * | 1982-07-10 | 1984-01-21 | 株式会社明電舎 | Amplification gate turn-off thyristor |
-
1984
- 1984-07-27 JP JP11433384U patent/JPS6130259U/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5046075A (en) * | 1973-08-28 | 1975-04-24 | ||
| JPS5080781A (en) * | 1973-11-13 | 1975-07-01 | ||
| JPS5242070U (en) * | 1975-09-19 | 1977-03-25 | ||
| JPS58127376A (en) * | 1982-01-25 | 1983-07-29 | Fuji Electric Corp Res & Dev Ltd | Gto thyristor |
| JPS599560U (en) * | 1982-07-10 | 1984-01-21 | 株式会社明電舎 | Amplification gate turn-off thyristor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0328519Y2 (en) | 1991-06-19 |
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