JPS613055A - Method and apparatus for detecting defect in surface layer - Google Patents
Method and apparatus for detecting defect in surface layerInfo
- Publication number
- JPS613055A JPS613055A JP59123844A JP12384484A JPS613055A JP S613055 A JPS613055 A JP S613055A JP 59123844 A JP59123844 A JP 59123844A JP 12384484 A JP12384484 A JP 12384484A JP S613055 A JPS613055 A JP S613055A
- Authority
- JP
- Japan
- Prior art keywords
- echo
- defect
- echoes
- ultrasonic beam
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
- G01N29/041—Analysing solids on the surface of the material, e.g. using Lamb, Rayleigh or shear waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/34—Generating the ultrasonic, sonic or infrasonic waves, e.g. electronic circuits specially adapted therefor
- G01N29/348—Generating the ultrasonic, sonic or infrasonic waves, e.g. electronic circuits specially adapted therefor with frequency characteristics, e.g. single frequency signals, chirp signals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/028—Material parameters
- G01N2291/02854—Length, thickness
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Acoustics & Sound (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、表面付近に欠陥があっては強度的に不都合な
部材の欠陥探傷や非常に薄い材料の内部探傷忙活用され
る超音波を利用した表層欠陥の検出方法及びその装置に
関fる。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention utilizes ultrasonic waves, which are used for flaw detection of members whose strength is disadvantageous if there are defects near the surface, and for internal flaw detection of very thin materials. The present invention relates to a method for detecting surface layer defects and an apparatus therefor.
従来、被検体の表面の極(近い部分に存在′fる欠陥の
、超音波による検出方法としては次に述べる三つの方法
が一般的であった。Conventionally, the following three methods have been commonly used to detect defects near the surface of an object using ultrasonic waves.
(1) 第1の方法は、第1図に示すように垂直探触
子lを遅延材2を介して被検体3−ヒに配置し、被検体
3VC内在する欠陥4に向って垂直探触子lから超音波
ビーム5を投射し、欠陥4に36いて生じろ欠陥エコー
6をとらえようとてと)ものである。(1) In the first method, as shown in Fig. 1, a vertical probe 1 is placed on the subject 3-H through a delay material 2, and the vertical probe 1 is vertically probed toward the defect 4 existing in the subject 3VC. An ultrasonic beam 5 is projected from a sample 1 to a defect 4 and a defect echo 6 generated thereon is captured.
なお、同第1図において7は表面エコーを示している。In addition, in FIG. 1, 7 indicates a surface echo.
この方法によると第2図に示すように、エコー高さPs
で示す表面エコー71C対して遅延材2の路程外だけエ
コー高さPfで示す欠陥エコー6が分離されるが、欠陥
4の位置が被検体30表面にきわめて近い場合+cI’
!第2図に示す表面エコー7と欠陥エコー6とが重なっ
てしまい、それ故第1図に示す欠陥4の被検体3の表面
からの距離すなわち欠陥深さ、及び被検体3の大きさ例
えば幅寸法等を検出することができない。According to this method, as shown in Fig. 2, the echo height Ps
The defect echo 6 shown by the echo height Pf is separated only outside the path of the delay material 2 from the surface echo 71C shown by , but when the position of the defect 4 is extremely close to the surface of the object 30 +cI'
! The surface echo 7 shown in FIG. 2 and the defect echo 6 overlap, and therefore the distance of the defect 4 shown in FIG. Unable to detect dimensions etc.
なお、エコーの分解能を上げるために超音波ビーム50
周波数を例えば20MHzという高周波釦することが考
えられるが、この場合でも探傷可能な欠陥深さはl、
5 m m付近までであり、それより小さいものにあっ
ては第3図に例示’fる表面エコー7と欠陥エコー6と
を分離fろことができず。In addition, in order to increase the echo resolution, the ultrasonic beam 50
It is conceivable to set the frequency to a high frequency button of 20 MHz, for example, but even in this case, the detectable defect depth is l,
If it is smaller than 5 mm, it is impossible to separate the surface echo 7 and the defect echo 6 shown in FIG. 3 as an example.
検出不能となる。becomes undetectable.
(2)第2の方法は@3図に示すよ5Vc、表面波探触
子8を被検体3上に配置し、被検体3に内在する欠陥4
1C面って超音波ビームを投射し、表面波9の欠陥エコ
ーによって欠陥4の有無を検出するものである。(2) The second method is to place the surface wave probe 8 at 5Vc on the object 3 as shown in Fig.
An ultrasonic beam is projected onto the 1C surface, and the presence or absence of the defect 4 is detected based on the defect echo of the surface wave 9.
しかし、この方法にあっては欠陥4の有無を検出するこ
とはできるものの、欠陥4の大きさや上述した欠陥深さ
は検出することができない。However, although this method can detect the presence or absence of the defect 4, it cannot detect the size of the defect 4 or the depth of the defect described above.
(3)第3の方法は超音波ビームによる方法であるが、
この方法は検出原理から明らかなよ51’(、探傷可能
な欠陥は表面からたかだか数μm程度の部分和あるもの
に限られる。(3) The third method is a method using an ultrasonic beam,
As is clear from the detection principle of this method, the defects that can be detected are limited to those with a partial sum of several μm from the surface.
本発明は、このような従来技術における実情に鑑みてな
されたもので、その目的は、被検体の表面から数μm以
上1.5 m m以下の位@に存在する欠陥を含む表層
欠陥を良好に検出することができる表層欠陥の検出方法
及びその装置を提供することにある。The present invention has been made in view of the actual situation in the prior art, and its purpose is to eliminate surface defects including defects present at a distance of several μm or more and 1.5 mm or less from the surface of the specimen. An object of the present invention is to provide a method and apparatus for detecting surface layer defects that can detect surface defects.
本発明は、この目的を達成てろために、被検体の表面近
(に存在する欠陥に超音波ビームを投射すること釦よっ
て得られる欠陥エコーと表面エコーの合成エコーのエコ
ー高さが、欠陥エコーと表面エコーの位相差に関係して
いることに着目し、合成エコーのエコー高さに基づいて
欠陥深さや欠陥の大きさを検知′fるものであり、そし
てその検出方法は、被検体の表面VC超音波ビームを投
射して表面エコーを求めるとともに、被検体の表面付近
に存在する欠陥釦対して超音波ビームを投射して表面エ
コーと欠陥エコーとの合成エコーを求め、しかも合成エ
コー及び上述の表面エコーを超音波ビームの周波数を異
ならせてそれぞれ求め、これらの合成エコー及び表面エ
コーのエコー高さと、欠陥の被検体の表面からの距Mf
なわち欠陥深さ及び欠陥の大きさとの相関関係から、欠
陥深さ及び欠陥の大きさを検出する構成にしである。In order to achieve this objective, the present invention aims to project an ultrasonic beam onto a defect existing near the surface of the object. The defect depth and defect size are detected based on the echo height of the synthesized echo, and the detection method is based on the height of the surface echo. A surface VC ultrasonic beam is projected to obtain a surface echo, and an ultrasonic beam is projected to a defective button existing near the surface of the object to obtain a composite echo of the surface echo and the defect echo. The above-mentioned surface echoes are obtained using different frequencies of the ultrasonic beam, and the echo heights of these combined echoes and surface echoes and the distance Mf from the surface of the defective object are determined.
In other words, the defect depth and the defect size are detected from the correlation between the defect depth and the defect size.
また、この検出方法に使用する検出装置は、被検体の表
面に配電される探触子と、この探触子に接続され、超音
波ビームを投射させろ信号を探触子に送信する送信部及
び反射エコーに相応する信号な探触子かも受信′fる受
信部と、送信sVc接続され、種類の異なる複数の周波
数のそれぞれに設定可能な周波数変換部と、受信部で受
信された表面エコー及び合成エコーを周波数の種類に関
連させて記憶する記憶部と、この記憶部に記憶された表
面エコー及び合成エコーのエコー高さに基づいて欠陥深
さ及び欠陥の大きさを演算fる演算部とを備えた構成に
しである。The detection device used in this detection method includes a probe that distributes power to the surface of the subject, a transmitter connected to the probe, and a transmitter that transmits a signal to the probe to project an ultrasonic beam. A receiving section that receives a signal corresponding to the reflected echo from the probe; a frequency converting section that is connected to the transmitting sVc and can be set to each of a plurality of different frequencies; a storage unit that stores synthetic echoes in association with frequency types; and a calculation unit that calculates defect depth and defect size based on the surface echoes and echo heights of the synthetic echoes stored in the storage unit. It has a configuration with
以下、本発明を図に基づいて説明fる。第4図は本発明
の表層欠陥の検出方法に使用される検出装置の一実施例
を示す説明図である。はじめに、この第4図によって検
出装置の一実施例について述べ、次に検出方法の一実施
例について述べる。The present invention will be explained below based on the drawings. FIG. 4 is an explanatory diagram showing one embodiment of a detection device used in the surface layer defect detection method of the present invention. First, an embodiment of the detection device will be described with reference to FIG. 4, and then an embodiment of the detection method will be described.
w、4図において、lは垂直探触子、2は遅延材、3は
被検体、4は被検体3VC内在fろ欠陥、5は超音波ビ
ーム、6は欠陥エコー、7は表面エコーで、これらは前
述の第1図に示すものと同等である。10.11j1垂
直探触子IK接続した受信部、送信部で、受信部ioは
反射エコーに相応する信号な探触子1から受信し、送信
部111丁超音波ビーム5を投射させる信号を垂直探触
子it’c送信する。12は送信部11に接続した周波
数変換部で、種類の異なる複数の周波数をそれぞれ設定
可能になっている。13は周波数変換部12に接続した
演算制御部で、後述fろように表面エコー7のエコー高
さPs及び表面エコー7と欠陥エコー6の合成エコーの
エコー高さPh[基づいて欠陥4の欠陥深さHl及び欠
陥4の大きさ例えば欠陥幅dを求める演算をおこなう演
算機能と、各種の制御機能を備えている。このような演
算制御部13はマイクロコンピュータで構成することが
できる。w, In Figure 4, l is the vertical probe, 2 is the delay material, 3 is the object to be inspected, 4 is the defect inside the object 3VC, 5 is the ultrasonic beam, 6 is the defect echo, 7 is the surface echo, These are equivalent to those shown in FIG. 1 above. 10.11j1 The receiving section and the transmitting section connected to the vertical probe IK. Probe it'c send. Reference numeral 12 denotes a frequency conversion section connected to the transmitting section 11, which is capable of setting a plurality of different types of frequencies. Reference numeral 13 denotes an arithmetic control unit connected to the frequency conversion unit 12, which calculates the echo height Ps of the surface echo 7 and the echo height Ph of the composite echo of the surface echo 7 and the defect echo 6 [based on the defect of the defect 4] as described below. It has an arithmetic function for calculating the depth Hl and the size of the defect 4, such as the defect width d, and various control functions. Such arithmetic control section 13 can be configured with a microcomputer.
14は受信部10Vc接続した増幅部で、受信部lOに
受信された信号を増幅−fろ。15は増幅部14及び演
算制御部13に接続した配憶部で、受信部10に受信さ
れた表面エコー7のエコー高さPsや、表面エコー7と
欠陥エコー6との合成エコーのエコー高さph等のデー
タ、及び制御プログラム等を記憶する。16は演算制御
部13及び記憶部15に接続した入力部で、例えば周波
数を指示てろキーボードからなっている。17は演算制
御部13及び記憶部15Fc接続した出力部で、例えば
ブラウン管を表示fb表示装置からなっている。Reference numeral 14 denotes an amplifying section connected to the receiving section 10Vc, which amplifies the signal received by the receiving section IO. 15 is a storage unit connected to the amplification unit 14 and the arithmetic control unit 13, and stores the echo height Ps of the surface echo 7 received by the reception unit 10 and the echo height of the composite echo of the surface echo 7 and the defect echo 6. It stores data such as pH, control programs, etc. Reference numeral 16 denotes an input section connected to the arithmetic control section 13 and the storage section 15, and includes, for example, a keyboard for inputting a frequency. Reference numeral 17 denotes an output section connected to the arithmetic control section 13 and the storage section 15Fc, and is composed of, for example, a cathode ray tube display fb display device.
次に、この第4図に示す検出装置を使用しておこなわれ
る検出方法の一実施例について述べる。Next, an embodiment of a detection method performed using the detection apparatus shown in FIG. 4 will be described.
まず、第4図の位置Aで示すように、被検体30表面に
遅延材2を介して垂直探触子1を配置する。この位置A
部分の被検体30表層には欠陥4が存在しないものとす
る。そして、入力部16を操作して周波数を例えば3
M Hz Ic指示′fる。この3 MHz K相当す
る信号は演算制御部13を介して周波数変換部12&c
送られるとともに、記憶部15に送られる。記憶部15
は周波数の種類に相応f61つのエリアIC3M I−
1zの値を記憶−fろ。First, as shown at position A in FIG. 4, the vertical probe 1 is placed on the surface of the object 30 with the delay material 2 interposed therebetween. This position A
It is assumed that no defect 4 exists on the surface layer of the portion of the object 30 to be inspected. Then, by operating the input section 16, the frequency is set to 3, for example.
MHz Ic indication. This signal corresponding to 3 MHz K is sent to the frequency converter 12&c via the arithmetic controller 13.
At the same time, it is also sent to the storage section 15. Storage section 15
corresponds to the type of frequency f6 one area IC3M I-
Memorize the value of 1z -f.
なお、出力部17は必要に応じて、今、入力部16で指
示された周波数が3 M Hzであることを記憶部15
からの信号によって表示fろ。一方、周波数変換部12
は演算制御部13から送らねた信号によって3 M H
zの周波数となるように設定する。これによって送信部
11は探触子IK信号を送り、探触子lは3 M I−
1zの周波数の超音波ビーム5を被検体3に投射する。Note that the output unit 17 stores information in the storage unit 15 as necessary that the frequency currently specified by the input unit 16 is 3 MHz.
Displayed by a signal from . On the other hand, the frequency converter 12
is 3 MH by the signal not sent from the arithmetic control section 13.
Set it to be the frequency of z. As a result, the transmitter 11 sends the probe IK signal, and the probe l is 3M I-
An ultrasonic beam 5 having a frequency of 1z is projected onto the subject 3.
そして、こJ1ニよって被検体3の表面で生じた表面エ
コー7が探触子lを介して受信部10に受信され、さら
に増幅部14で増幅されて当該表面エコー7のエコー高
さPsとして記憶部15の周波数3MHz?+X記憶さ
れているエリアに、記憶されろ。なお、出力部17は必
要に応じて、今、記憶部15に記憶された表面エコー7
のエコー高さPsを表示する。Then, the surface echo 7 generated on the surface of the subject 3 by this J1 d is received by the receiving section 10 via the probe 1, and is further amplified by the amplifying section 14 as the echo height Ps of the surface echo 7. Is the frequency of the storage unit 15 3MHz? +X Be memorized in the memorized area. Note that the output unit 17 outputs the surface echo 7 currently stored in the storage unit 15 as needed.
Displays the echo height Ps of .
次に、周波数を上述のように3MHzに設定した状態に
おいて、探触子1及び遅延材2を同第4図の位11jA
から矢印18方向に移動させる。そして、今仮に位置B
に相応する被検体30表層部分に欠陥4が存在していた
とする。このとき、垂直探触子1から投射される周波数
3 M Hzの超音波ビーム5によって欠陥4において
欠陥エコー6が生じ、被検体30表面において表面エコ
ー7が生じ、被検体3に内在する欠陥4の欠陥深さHが
例えば2mm以内のものであったとf、bと、これらの
欠陥エコー6と表面エコー7とが合成されて合成エコー
となり、この合成エコーが探触子1を介して受信部10
に受信され、さらに増幅部14で増幅さねて、当該合成
エコーのエコー高さphとして記憶部15の周波数3
M Hzが記憶されているエリアに、先に記憶された表
面エコー7のエコ−高さPsに対応させて記憶される。Next, with the frequency set to 3 MHz as described above, the probe 1 and delay material 2 are placed at 11jA as shown in Fig. 4.
18 in the direction of arrow 18. And now, temporarily, position B
It is assumed that a defect 4 exists in the surface layer portion of the object 30 corresponding to . At this time, a defect echo 6 is generated in the defect 4 by the ultrasonic beam 5 with a frequency of 3 MHz projected from the vertical probe 1, a surface echo 7 is generated on the surface of the object 30, and the defect 4 inherent in the object 3 is generated. For example, if the defect depth H is within 2 mm, f, b, these defect echoes 6 and surface echoes 7 are combined to form a composite echo, and this composite echo is sent to the receiver via the probe 1. 10
It is further amplified by the amplification unit 14, and the frequency 3 is stored in the storage unit 15 as the echo height ph of the synthesized echo.
In the area where MHz is stored, it is stored in correspondence with the previously stored echo height Ps of the surface echo 7.
なお、出力部17は必要に応じて、今、配憶部151c
記憶された合成エコーのエコー高さPhを表示fる。Note that the output unit 17 is currently configured to output data to the storage unit 151c as needed.
The echo height Ph of the stored synthetic echo is displayed.
次に、探触子l及び遅延材2を例えば第4図の位置AV
C,戻し、入力部16を操作して周波数を例えば30M
HzK指示fる。指示30 M I(、Z IC相当’
fる信号は演算制御部13を介して周波数変換部12に
送られるとともに、記憶部15に9くもれる。記憶部1
5は周波数の種類に相応する別のエリアに30へ(II
zの値を記憶すゐ。な七、出力部17は必要に応じて、
今、入力部16で指示さハた周波数が30MHzである
こと父記1’f部15からの信号釦よって表示fる。一
方、周波数変換部12は演算制御部13かも送られた信
号によって今までの3 M Hzから30MI(zの周
波数となるように変換fる。これによって送信部11は
探触子lVc信号を送り、探触子lは30 M Hzの
周波数の超音波ビーム5を被検体31C投射f/、Io
これ&’CLつて上述と同様にして周波数30MHzに
相応する表面エコー7のエコー高さP s’が求められ
、このエコー高さP s’が記憶部150周波数30M
Hzが記憶されているエリアに記憶される。なお、出力
部17は必qvc応じて、今、記憶部15VC記憶され
た表面エコー7のエコー高さP s’を表示する。Next, the probe 1 and the delay material 2 are moved to the position AV shown in FIG. 4, for example.
C. Go back and operate the input section 16 to set the frequency to 30M, for example.
HzK instruction. Instruction 30 M I (, Z IC equivalent'
The signal f is sent to the frequency conversion section 12 via the calculation control section 13 and is also stored in the storage section 15. Storage part 1
5 to 30 in another area corresponding to the type of frequency (II
Memorize the value of z. 7. The output section 17 can be configured as necessary.
Now, the signal button from section 15 displays that the frequency specified by input section 16 is 30 MHz. On the other hand, the frequency converter 12 converts the frequency from 3 MHz to 30 MI (z) according to the signal sent from the arithmetic controller 13. As a result, the transmitter 11 sends the probe lVc signal. , the probe l projects an ultrasound beam 5 with a frequency of 30 MHz onto the object 31C f/, Io
With this &'CL, the echo height P s' of the surface echo 7 corresponding to the frequency 30 MHz is obtained in the same manner as described above, and this echo height P s' is stored in the storage section 150 at the frequency 30 MHz.
It is stored in the area where Hz is stored. Note that the output unit 17 necessarily displays the echo height P s' of the surface echo 7 that is currently stored in the storage unit 15VC.
次に、周波数を30MHzに設定した状態において探触
子1及び遅延材2を第4図の位置Aから位置8士で移動
させる。このとき、上述と同様にして欠陥エコー6と表
面エコー7が生じ、これが合成エコーとなり、この合成
エコーのエコー高すPh’が記憶部150周波数30M
I(zが記憶されているエリアに、先に記憶された表面
エコー7のエコー高さPS′に対応させて記憶される。Next, with the frequency set at 30 MHz, the probe 1 and delay material 2 are moved from position A to position 8 in FIG. 4. At this time, a defect echo 6 and a surface echo 7 are generated in the same manner as described above, which becomes a composite echo, and the echo height Ph' of this composite echo is 30M
I(z is stored in the area where it is stored in correspondence with the echo height PS' of the surface echo 7 previously stored.
なお、出力部17は必要に応じて、今、記憶部15に記
憶された合成エコーのエコー高さPh/を表示′fろ。Note that the output section 17 displays the echo height Ph/ of the synthesized echo currently stored in the storage section 15, if necessary.
そして、例えば記憶部15に周波数30MHzに相応f
る合成エコーのエコー高さPh/が記憶されたとき、演
算制御部13j’!記憶部15に記憶さねている周波数
3MHzK相応fろ表面エコー7のエコー高すP s
、 合成エコーのエコー高すPhを続出して下rCの(
1)式の演算をおこない、また周波数30MHzK相応
f7)表面エコー7のエコー高さP s/、合成エコー
のエコー高さPh/を読出して下記の(2)式の演算を
おこなう。For example, f corresponding to the frequency of 30 MHz is stored in the storage unit 15.
When the echo height Ph/ of the synthesized echo is stored, the calculation control unit 13j'! The echo of the surface echo 7 is increased correspondingly to the frequency 3 MHzK stored in the storage unit 15.
, the echo of the synthesized echo increases and the Ph of the lower rC (
1) Calculate the equation (2) below, and read out the echo height P s/ of the surface echo 7 and the echo height Ph/ of the composite echo corresponding to the frequency of 30 MHzK f7).
Ph=(Ps”−)K2Ps、”
Pb’= (Ps/2−1− K”Ps/まただし、K
:欠陥4かものエコー反射率、すなわち、欠陥エフ−6
のエコー高さ
と表面エコー7のエコー高さの比
・・・・・・・・・未知数
λ:周波数3 M Hzの波長
λ′二周波数30MHzの波長
H:欠陥深さ
・・・・・・・・・未知数
である。そして、上記の(1)。(2)式から未知数H
1Kが求められろ。Ph=(Ps"-)K2Ps,"Pb'=(Ps/2-1-K"Ps/Madashi, K
: Echo reflectance of defect 4, i.e. defect F-6
The ratio of the echo height of the surface echo 7 to the echo height of the surface echo 7...Unknown quantity λ: Wavelength λ' of frequency 3 MHz, Wavelength H of frequency 30 MHz: Defect depth... ...It is an unknown quantity. And (1) above. From equation (2), the unknown H
1K is required.
なお、欠陥4からσ)エコー反射率には欠陥幅dによっ
て決まり、一般に下記の(3)式の関係がある。Note that the echo reflectance from defect 4 (σ) is determined by the defect width d, and generally has the relationship shown in equation (3) below.
K = c d (3)ここでC
は定数であり、この定数Cは実験によりあらかじめ求め
られろ。K = c d (3) where C
is a constant, and this constant C must be determined in advance by experiment.
したがって、上述のようにして得られたKと、(3)式
とにより欠陥@dを求めろ演算がおこなわれる。このよ
うにして得られた欠陥深さHl及び欠陥幅dは必要に応
じて出力部17に表示される。Therefore, an operation is performed to find the defect @d using K obtained as described above and equation (3). The defect depth Hl and defect width d thus obtained are displayed on the output section 17 as necessary.
このように構成しである検出装置及び検出方法にあって
は、異なる同波数の超音波ビーム5をそれぞれ個別に投
射させ、当該周波数に対応した表面エコー7及び合成エ
コーのエコー高さに基づいて欠陥深さH1欠陥幅dを求
めろようにしてあり、しかもこれらの表面エコー及び合
成エコーのエコー高さは容易に得られることから、従来
では不可能であった被検体30表面から数μm以上1.
5mm以下の位置に内在される欠陥4を含む表層欠陥を
確実に検出′fることができ、しかもリアルタイムに表
示することが可能である。In the detection device and detection method configured in this way, ultrasonic beams 5 of different same wave numbers are individually projected, and the echo height of the surface echo 7 and composite echo corresponding to the frequency is determined. Since the defect depth H1 and the defect width d can be determined, and since the echo heights of these surface echoes and composite echoes can be easily obtained, it is possible to obtain the defect depth H1 and the defect width d. 1.
It is possible to reliably detect surface layer defects, including defects 4 located at a position of 5 mm or less, and to display them in real time.
なお、上記実施例では(11,(2)式の演算によっ℃
欠陥深さHを求めるようになっているが、周波数を上述
のようVC3M Hzと30MHzの2種類(変化させ
たときの合成エコーのエコー高さの変化率ΔP(=Ph
/Ph/)と欠陥深さH(mm)との間には欠陥幅d
= 1 m mの場合VCは第5図に示すような関係が
あり、したがって、このよ5なlPとHとの相関関係を
あらかじめ記憶部15vc記憶させておき、3MHz、
30MI(zに相応する合成エコーのエコー高さPh、
Ph/が得られた際に、こねらのPh、Ph/からlP
を演算し、記憶部15に記憶されたlPと[Iとの相関
関係から直ちKHを求めるJ5にしてもJい。In addition, in the above example, by calculating the equation (11, (2))
The defect depth H is calculated by calculating the rate of change in the echo height of the synthesized echo ΔP (= Ph
/Ph/) and the defect depth H (mm) is the defect width d.
= 1 mm, VC has the relationship as shown in FIG.
30 MI (echo height Ph of the composite echo corresponding to z,
When Ph/ is obtained, Konera's Ph, lP from Ph/
It is also possible to calculate KH immediately from the correlation between lP and [I stored in the storage unit 15.
また、上記検出装置の実施例では、出力部17を表示装
償によって枯成しであるが、本発明はこれに限らず、こ
の出力部17をプリンタ等の記録装置によって構成して
もよい。Further, in the embodiment of the detection device described above, the output unit 17 is provided with a display device, but the present invention is not limited to this, and the output unit 17 may be configured with a recording device such as a printer.
また、上記検出装置の実施例では、入力f′AI6をキ
ーボードによって構成し、周波(りを指示するようにし
であるが、本発明はこれに限らず、記憶部15にあらか
じめ特定の2つの周波数を設定しておき、入力部16を
単に検出操作の開始、終了を指示するオンオフスイッチ
によって構成することも可能である。Further, in the embodiment of the detection device described above, the input f'AI6 is configured by a keyboard to instruct the frequency, but the present invention is not limited to this. It is also possible to configure the input section 16 with an on/off switch that simply instructs the start and end of the detection operation.
また、上記検出方法の実施例では、第4図に例示−rる
ように周波数を3MH2&CLだ状態で位置Aにおいて
表面エコー7のエコー高さPsを求め、位fiBにおい
て合成エコーのエコー高さPhを求め、次いで周波数を
30MHzVcした状態で位置AICおいて表面エコー
7のエコー高さPs’を求め、位置Bにおいて合成エコ
ーのエコー高さPh/を求めたが、本発明はこれに限ら
ず、位置Avcおいてまず周波数を3MHz#fc(、
たときり表面エコー7のエコー高さPsと、周波数を3
0MHzにしたときの表面エコー7のエコー高さPs’
を求めておぎ、次いで位置BICおいて周波数を3MH
zrcしたときの合成エコーのエコー高さPhと、周波
数を30M)lzVc(、たときの合成エコーのエコー
高さPh’を求めろよ’IcL、てもよい。In addition, in the embodiment of the above detection method, the echo height Ps of the surface echo 7 is determined at position A with the frequency set to 3MH2&CL as shown in FIG. Then, with the frequency set to 30 MHzVc, the echo height Ps' of the surface echo 7 was determined at position AIC, and the echo height Ph/ of the composite echo was determined at position B. However, the present invention is not limited to this. At position Avc, first set the frequency to 3MHz#fc (,
When the echo height Ps of cut surface echo 7 and the frequency are 3
Echo height Ps' of surface echo 7 when set to 0MHz
, then change the frequency to 3MH at position BIC.
Find the echo height Ph of the synthesized echo when zrc and the echo height Ph' of the synthesized echo when the frequency is 30M)lzVc(, IcL.
また、上記実施例では周波数の種類を3 M Hz、3
0MHzとしたが、本発明はこれに限定されるものでは
な(,3MHz130MHz 、!:H異す7)ものに
した場合も、(1)、 (2)、 (31式と同様にし
て欠陥深さHl及び欠陥幅dを求めろことができ、その
場合も第5図に示すものに類似したlPとHとの相関関
係が得られろ。In addition, in the above embodiment, the type of frequency is 3 MHz, 3
0 MHz, but the present invention is not limited to this (, 3 MHz, 130 MHz, !:H different7). Determine the depth Hl and the defect width d, and in that case, a correlation between lP and H similar to that shown in FIG. 5 will be obtained.
本発明の表層欠陥の検出方法及びその9′−Ryま、以
上のようvcN’を成しであることから、被検体の表面
から数μm1以上1.5 m m以下の位置に存在′f
ろ欠陥を含む表層欠陥を良好に検出す2.)ことができ
、それ故、従来不可能であった表層部分ICおけろ材料
や製品の内部探傷をおこなうことができ、不良品の摘出
等を高精度に実現できろ効果がちる。Since the method for detecting surface defects of the present invention and its 9'-Ry constitute vcN' as described above, the defects exist at a position of several μm or more and 1.5 mm or less from the surface of the specimen.
2. Good detection of surface defects including filter defects. ), therefore, it is possible to perform internal flaw detection of surface layer IC surface materials and products, which was previously impossible, and it is highly effective in detecting defective products with high precision.
第1図は従来の表層欠陥の検出方法の第1の例を示す説
明図、第2図+j、 :F 1図九示す’こ−1の例に
よって11)らねるエコーのエコー高さとビーム路程と
の関係を示f説明図、祝3図は従来の表層欠陥の検出装
置の第2の例を示す説明図、第4図は本発明の表層欠陥
の検出方法に使用される検出装置の一実施例を示す説明
図、第5図は本発明の表層欠陥の検出方法において適用
可能な合成エコーの変化率ΔPと欠陥深さHとの関係を
示す特性図である。
l・・・・・・垂直探触子、2・・・・・・遅延材、3
・・・・・・被検体、4・・・・・・欠陥、5・・・・
・・超音波ビーム、6・・・・・・欠陥エコー、7・・
・・・・表面エコー、8・・・・・・斜角探触子、10
・・・・・・受信部、11・・・・・・送信部、12・
・・・・・周波数変換部、13・・・・・・演算制御部
、14・・・・・・増幅部、15・・・・・記憶部、1
6・・・・・・入力部、17・・・・・・出力部。
第1図
児2図
第3図
鬼4図Figure 1 is an explanatory diagram showing the first example of the conventional surface defect detection method, Figure 2 +j, :F Figure 3 is an explanatory diagram showing a second example of a conventional surface defect detection device, and Figure 4 is an explanatory diagram showing a second example of a conventional surface defect detection method. FIG. 5, an explanatory diagram showing an embodiment, is a characteristic diagram showing the relationship between the rate of change ΔP of a synthetic echo and the defect depth H, which can be applied in the surface defect detection method of the present invention. l... Vertical probe, 2... Delay material, 3
...Object to be inspected, 4...Defect, 5...
...Ultrasonic beam, 6...Defect echo, 7...
...Surface echo, 8...Bevel probe, 10
. . . Receiving section, 11 . . . Transmitting section, 12.
... Frequency conversion section, 13 ... Arithmetic control section, 14 ... Amplification section, 15 ... Storage section, 1
6...Input section, 17...Output section. Figure 1 Child 2 Figure 3 Demon 4 Figure
Claims (2)
において、被検体の表面に超音波ビームを投射して表面
エコーを求めるとともに、上記欠陥に対して超音波ビー
ムを投射して表面エコーと上記欠陥における欠陥エコー
との合成エコーを求め、しかも該合成エコー及び上記表
面エコーを上記超音波ビームの周波数を異ならせてそれ
ぞれ求め、これらの合成エコー及び表面エコーのエコー
高さと上記欠陥の上記被検体の表面からの距離及び欠陥
の大きさとの相関関係から、該欠陥の被検体の表面から
の距離及び欠陥の大きさを検出することを特徴とする表
層欠陥の検出方法。(1) In a method for detecting defects existing near the surface of a test object, an ultrasonic beam is projected onto the surface of the test object to obtain a surface echo, and an ultrasonic beam is projected onto the defect to obtain a surface echo. and the defect echo in the above defect, and the synthesized echo and the surface echo are obtained respectively by different frequencies of the ultrasonic beam, and the echo heights of these synthesized echoes and surface echoes and the defect echo in the defect are determined. A method for detecting surface defects, comprising detecting the distance of the defect from the surface of the object to be inspected and the size of the defect from a correlation between the distance from the surface of the object and the size of the defect.
ーを求めるとともに、被検体の表面付近に存在する欠陥
に対して超音波ビームを投射して表面エコーと上記欠陥
における欠陥エコーとの合成エコーを求め、しかも該合
成エコー及び上記表面エコーを上記超音波ビームの周波
数を異ならせてそれぞれ求め、これらの合成エコー及び
表面エコーのエコー高さと、上記欠陥の上記被検体の表
面からの距離及び該欠陥の大きさとの相関関係から、該
欠陥の上記被検体の表面からの距離及び該欠陥の大きさ
を測定する表層欠陥の検出方法に使用する検出装置にお
いて、被検体の表面に配置される探触子と、この探触子
に接続され、超音波ビームを投射させる信号を探触子に
送信する送信部及び反射エコーに相応する信号を探触子
から受信する受信部と、上記送信部に接続され、種類の
異なる複数の周波数のそれぞれに設定可能な周波数変換
部と、上記受信部で受信された表面エコー及び合成エコ
ーを周波数の種類に関連させて記憶する記憶部と、この
記憶部に記憶された表面エコー及び合成エコーのエコー
高さに基づいて、上記欠陥の上記被検体の表面からの距
離及び該欠陥の大きさを演算する演算部とを備えたこと
を特徴とする表層欠陥の検出装置。(2) In addition to projecting an ultrasonic beam onto the surface of the object to obtain surface echoes, projecting the ultrasonic beam to defects existing near the surface of the object to compare surface echoes with defect echoes from the defects mentioned above. A synthesized echo is obtained, and the synthesized echo and the surface echo are obtained by using different frequencies of the ultrasonic beam, and the echo heights of these synthesized echoes and surface echoes and the distance of the defect from the surface of the object are determined. and the correlation with the size of the defect, in a detection device used in a surface defect detection method for measuring the distance of the defect from the surface of the object to be inspected and the size of the defect, a transmitting section that is connected to the probe and transmits a signal for projecting an ultrasound beam to the probe, and a receiving section that receives a signal corresponding to a reflected echo from the probe; a frequency converting section that is connected to the section and can be set to each of a plurality of different types of frequencies; a storage section that stores the surface echo and composite echo received by the receiving section in association with the frequency type; a calculation section that calculates the distance of the defect from the surface of the object and the size of the defect based on the echo heights of the surface echo and the composite echo stored in the surface layer. Defect detection equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59123844A JPS613055A (en) | 1984-06-18 | 1984-06-18 | Method and apparatus for detecting defect in surface layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59123844A JPS613055A (en) | 1984-06-18 | 1984-06-18 | Method and apparatus for detecting defect in surface layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS613055A true JPS613055A (en) | 1986-01-09 |
| JPH037904B2 JPH037904B2 (en) | 1991-02-04 |
Family
ID=14870787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59123844A Granted JPS613055A (en) | 1984-06-18 | 1984-06-18 | Method and apparatus for detecting defect in surface layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS613055A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6367016A (en) * | 1986-09-09 | 1988-03-25 | Nippon Soken Inc | Touch panel |
| WO2021167778A1 (en) * | 2020-02-19 | 2021-08-26 | Becton, Dickinson And Company | Interferometric detection of an object on a surface using wavlength modulation and systems for same |
-
1984
- 1984-06-18 JP JP59123844A patent/JPS613055A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6367016A (en) * | 1986-09-09 | 1988-03-25 | Nippon Soken Inc | Touch panel |
| WO2021167778A1 (en) * | 2020-02-19 | 2021-08-26 | Becton, Dickinson And Company | Interferometric detection of an object on a surface using wavlength modulation and systems for same |
| US11385163B2 (en) | 2020-02-19 | 2022-07-12 | Becton, Dickinson And Company | Interferometric detection of an object on a surface using wavelength modulation and systems for same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH037904B2 (en) | 1991-02-04 |
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