JPS6130731A - Radiation energy detector - Google Patents

Radiation energy detector

Info

Publication number
JPS6130731A
JPS6130731A JP15375384A JP15375384A JPS6130731A JP S6130731 A JPS6130731 A JP S6130731A JP 15375384 A JP15375384 A JP 15375384A JP 15375384 A JP15375384 A JP 15375384A JP S6130731 A JPS6130731 A JP S6130731A
Authority
JP
Japan
Prior art keywords
output
temperature
holder
photovoltaic element
radiant energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15375384A
Other languages
Japanese (ja)
Other versions
JPH0481133B2 (en
Inventor
Isao Hishikari
功 菱刈
Toshihiko Ide
敏彦 井手
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chino Corp
Original Assignee
Chino Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chino Works Ltd filed Critical Chino Works Ltd
Priority to JP15375384A priority Critical patent/JPS6130731A/en
Publication of JPS6130731A publication Critical patent/JPS6130731A/en
Publication of JPH0481133B2 publication Critical patent/JPH0481133B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0215—Compact construction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
    • G01J5/064—Ambient temperature sensor; Housing temperature sensor; Constructional details thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0801—Means for wavelength selection or discrimination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0801—Means for wavelength selection or discrimination
    • G01J5/0802—Optical filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/70—Passive compensation of pyrometer measurements, e.g. using ambient temperature sensing or sensing of temperature within housing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/046—Materials; Selection of thermal materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Radiation Pyrometers (AREA)

Abstract

PURPOSE:To attain miniaturization and the enhancement of accuracy, by integrally holding a silicone thermoelectromotive force element and the optical filter provided to the front surface of the light receiving surface thereof and performing the temp. compensation of the output of the thermoelectromotive force element. CONSTITUTION:An optical filter 1 selectively absorbing radiation energy with a wavelength region longer than at least about 1mum is provided to the front surface of a Si-element 2 for detecting radiation energy, and the filter 1 and the element 2 are integrally held to a good heat conductive holder 4 by holding means 41, 42 while a temp. detector 5 is provided to a required place of the holder 4 and the output thereof is supplied to an operation means 6 along with the output of the element 2 to perform the compensation of temp.

Description

【発明の詳細な説明】 （１）発明の分野 この発明は、シリコン光起電力素子、シリコン太陽電池
、シリコン素子（以下Ｓｉ素子という。）を使用した赤
外線放射エネルギー検出器に関するものである。DETAILED DESCRIPTION OF THE INVENTION (1) Field of the Invention The present invention relates to an infrared radiation energy detector using a silicon photovoltaic element, a silicon solar cell, and a silicon element (hereinafter referred to as a Si element).

（２）従来技術 出願人は、実公昭５１−１８３９において、Ｓｌ素子の
受光面に略１μｍより長い波長領域の放射エネルギーを
選択的に吸収する光学フィルタを設けるとともに、Ｓｌ
素子に並列または直列に温度検出抵抗を接続してなる温
度補償回路を設けた放射エネルギー検出器を提案してい
る。(2) Prior Art In Utility Model Publication No. 51-1839, the applicant provided an optical filter that selectively absorbs radiant energy in a wavelength region longer than about 1 μm on the light-receiving surface of the Sl element, and
We have proposed a radiant energy detector equipped with a temperature compensation circuit consisting of a temperature detection resistor connected in parallel or series to the element.

また、近年、マイクロコンビ一一タ、パソコン等のデジ
タル技術が進展し、小型、軽量、高精度化が求められて
いる。Furthermore, in recent years, digital technology such as microcomputers and personal computers has progressed, and there is a demand for smaller, lighter, and higher precision devices.

（３）発明の目的 この発明の目的は９以上の点に鑑み、より小型。(3) Purpose of the invention The purpose of this invention is to make it smaller in view of the above points.

為精度の放射エネルギー検出器を提供することである。The purpose of this invention is to provide a highly accurate radiant energy detector.

（４）発明の概要 この発明は、シリコン光起電力素子（Ｓｉ素子）および
このシリコン光起電力素子の前面に設けられた少くとも
略１μｍより長い波長領域の放射工ネルギーを選択的（
こ吸収する光学フィルタを保持体により一体に保持し、
保持体またはシリコン光起電力素子の温度を検出器で検
出し演算手段によりシリコン光起電力素子の出力の温度
補償を行うようにした放射エネルギー検出器である。(4) Summary of the Invention The present invention provides a silicon photovoltaic element (Si element) and a silicon photovoltaic element provided on the front surface of the silicon photovoltaic element that selectively uses radiation energy in a wavelength region longer than about 1 μm.
The optical filter that absorbs this is held together by a holder,
This is a radiant energy detector in which the temperature of a holder or a silicon photovoltaic element is detected by a detector, and the temperature of the output of the silicon photovoltaic element is compensated for by a calculation means.

（５）発明の実施例 第１図は、この発明の一実施例を示す構成説明図である
。(5) Embodiment of the Invention FIG. 1 is an explanatory diagram showing an embodiment of the invention.

図において、ｌは、放射エネルギーを検出するＳｉ素子
２の前面に設けられた少くとも略１μｍより長い波長領
域の放射エネルギーを選択的に吸収する光学フィルタで
、これら光学フィルタｌ、Ｓｉ素子２は熱伝導の良好な
金属ブロック等よりなる保持体４に保持手段４１　、４
２でそれぞれ抜は止めされて一体に保持されている。保
持体４の所要箇所にサーミスタ、測温抵抗体、あるいは
熱電対等の温度検出器５が設けられでおり、その出力ｅ
ｔはＳｉ素子２の出力ｅｌとともに演算手段６に供給さ
れ。In the figure, l is an optical filter that selectively absorbs radiant energy in a wavelength region longer than approximately 1 μm, which is provided in front of the Si element 2 that detects radiant energy. Holding means 41, 4 are attached to a holding body 4 made of a metal block or the like with good thermal conductivity.
2, each is prevented from being removed and held together. Temperature detectors 5 such as thermistors, resistance thermometers, or thermocouples are provided at required locations on the holder 4, and the output e
t is supplied to the calculation means 6 together with the output el of the Si element 2.

温度補償演算が行われる。A temperature compensation calculation is performed.

なお、この演算手段６は、実公昭５１−１８３９で示す
ような温度補償回路でもよく、また、マイクロコンピュ
ータ、パーソナルコンピュータのようなデジタル演算手
段その他のものでもよい。The calculation means 6 may be a temperature compensation circuit as shown in Japanese Utility Model Publication No. 51-1839, or may be a digital calculation means such as a microcomputer or a personal computer.

つまり、光学フィルタ１により長波長側の放射エネルギ
ーは透過されず、はぼ１μｍ以下、あるいは、中心波長
０．６５μｍというような放射エネルギーがＳｉ素子２
に入射する。これにより、Ｓ工素子２の温度ドリフトは
一定方向に軽減される。このＳｉ素子２の出力勅は、更
に温度検出器５の出力６ｔに基いて、演算手段６により
、温度補償演算が行われ、温度補償された正しい出力ｅ
ｏが得られる。なお、演算手段６により温度Ｔへの変換
、リニアライズ変換その他の演算を行ってもよい。In other words, radiant energy on the long wavelength side is not transmitted through the optical filter 1, and radiant energy with a center wavelength of approximately 1 μm or less or 0.65 μm is transmitted to the Si element 2.
incident on . Thereby, the temperature drift of the S element 2 is reduced in a certain direction. The output signal of the Si element 2 is further subjected to temperature compensation calculation by the calculation means 6 based on the output 6t of the temperature detector 5, and the correct temperature-compensated output e
o is obtained. Note that the calculation means 6 may perform conversion to temperature T, linearization conversion, and other calculations.

このように、光学フィルタ１とＳｉ素子２とは保持体４
に両者一体に保持されているので、小型。In this way, the optical filter 1 and the Si element 2 are connected to the holder 4.
Since both are held together, it is small.

軽量であり、また、Ｓｉ素子２と温度検出器５とは近接
しで配置されているので、温度変化に対して同じように
変化し、このため、温度安定性がよく。It is lightweight, and since the Si element 2 and the temperature detector 5 are placed close to each other, they change in the same way in response to temperature changes, and therefore have good temperature stability.

高精度の放射エネルギー検出が可能となる。Highly accurate radiant energy detection becomes possible.

第２図は、この発明の他の実施例を示し、第１図と同一
符号は同等の構成要素を示す。この例では温度検出器５
が保持体４内のプリント基板３にＳｉ素子２とともに載
置され、　Ｓｉ素子２の温度に。FIG. 2 shows another embodiment of the invention, in which the same reference numerals as in FIG. 1 indicate equivalent components. In this example, temperature sensor 5
is placed on the printed circuit board 3 in the holder 4 together with the Si element 2, and the temperature reaches the temperature of the Si element 2.

より等しい温度を検出する構成とされている。また、プ
リント基板３に、増幅器等の電子部品７を載置し、いっ
そう小型化を図っている。It is configured to detect more equal temperatures. Furthermore, electronic components 7 such as an amplifier are placed on the printed circuit board 3 to further reduce the size.

（６）発明の効果 以上述べたように、この発明は、光学フィルタと８１素
子を保持体に一体に保持しているので、小型、軽量で、
温度安定性が良く、いっそう高精度の放射エネルギーの
検出が可能となる。(6) Effects of the Invention As described above, the present invention is small and lightweight because the optical filter and the 81 elements are integrally held in the holder.
It has good temperature stability and enables even more precise detection of radiant energy.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図、第２図は、この発明の一実施例を示す構成説明
図である。 １・・・光学フィルタ、２・・・Ｓｉ素子、３・・・プ
リント基板、４・・・保持体、５・・・温度検出器、６
・・・演算手段 特許出願人　株式会社　千野製作所 ダんを子　。FIGS. 1 and 2 are configuration explanatory diagrams showing one embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Optical filter, 2... Si element, 3... Printed circuit board, 4... Holder, 5... Temperature detector, 6
...Arithmetic means patent applicant Chino Seisakusho Danwoko Co., Ltd.

Claims (1)

【特許請求の範囲】 １、放射エネルギーを受光するシリコン光起電力素子お
よびこのシリコン光起電力素子の受光面の前面に設けら
れた少くとも略１μｍより長い波長領域の放射エネルギ
ーを選択的に吸収する光学フィルタを一体に保持する保
持体と、この保持体または前記シリコン光起電力素子の
温度を検出する温度検出器の出力に基き前記シリコン光
起電力素子の出力の温度補償を行う演算手段とを備えた
ことを特徴とする放射エネルギー検出器。 ２、前記シリコン光起電力素子を載置したプリント基板
を前記保持体に設けたことを特徴とする特許請求の範囲
第１項記載の放射エネルギー検出器。[Claims] 1. A silicon photovoltaic element that receives radiant energy, and a silicon photovoltaic element that selectively absorbs radiant energy in a wavelength region longer than about 1 μm, which is provided in front of the light-receiving surface of the silicon photovoltaic element. a holder that integrally holds an optical filter; and a calculation means for temperature-compensating the output of the silicon photovoltaic element based on the output of the holder or a temperature detector that detects the temperature of the silicon photovoltaic element. A radiant energy detector characterized by comprising: 2. The radiant energy detector according to claim 1, wherein a printed circuit board on which the silicon photovoltaic element is mounted is provided on the holder.
JP15375384A 1984-07-24 1984-07-24 Radiation energy detector Granted JPS6130731A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15375384A JPS6130731A (en) 1984-07-24 1984-07-24 Radiation energy detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15375384A JPS6130731A (en) 1984-07-24 1984-07-24 Radiation energy detector

Publications (2)

Publication Number Publication Date
JPS6130731A true JPS6130731A (en) 1986-02-13
JPH0481133B2 JPH0481133B2 (en) 1992-12-22

Family

ID=15569365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15375384A Granted JPS6130731A (en) 1984-07-24 1984-07-24 Radiation energy detector

Country Status (1)

Country Link
JP (1) JPS6130731A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03501820A (en) * 1988-09-15 1991-04-25 テムプ‐スティック　コーポレイション infrared thermometer
US20110090505A1 (en) * 2008-06-04 2011-04-21 Naohiro Kuze Quantum Infrared Sensor and Quantum Infrared Gas Concentration Meter Using the Same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5028782U (en) * 1973-07-09 1975-04-02
JPS569028U (en) * 1979-06-30 1981-01-26
JPS59107650A (en) * 1982-12-11 1984-06-21 Anritsu Corp Drift compensating circuit of photoelectric converter

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5028782U (en) * 1973-07-09 1975-04-02
JPS569028U (en) * 1979-06-30 1981-01-26
JPS59107650A (en) * 1982-12-11 1984-06-21 Anritsu Corp Drift compensating circuit of photoelectric converter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03501820A (en) * 1988-09-15 1991-04-25 テムプ‐スティック　コーポレイション infrared thermometer
US20110090505A1 (en) * 2008-06-04 2011-04-21 Naohiro Kuze Quantum Infrared Sensor and Quantum Infrared Gas Concentration Meter Using the Same
US8803092B2 (en) * 2008-06-04 2014-08-12 Asahi Kasei Microdevices Corporation Quantum infrared sensor and quantum infrared gas concentration meter using the same

Also Published As

Publication number Publication date
JPH0481133B2 (en) 1992-12-22

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