JPS6135722B2 - - Google Patents

Info

Publication number
JPS6135722B2
JPS6135722B2 JP52149995A JP14999577A JPS6135722B2 JP S6135722 B2 JPS6135722 B2 JP S6135722B2 JP 52149995 A JP52149995 A JP 52149995A JP 14999577 A JP14999577 A JP 14999577A JP S6135722 B2 JPS6135722 B2 JP S6135722B2
Authority
JP
Japan
Prior art keywords
charge
electrode
segments
split
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52149995A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5375878A (en
Inventor
Jooji Fuokusaru Tomasu
Fuata Ari Iburahimu Abudooeru
Hootaa Seraazu Resutaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Publication of JPS5375878A publication Critical patent/JPS5375878A/ja
Publication of JPS6135722B2 publication Critical patent/JPS6135722B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H15/00—Transversal filters
    • H03H15/02—Transversal filters using analogue shift registers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/30—Time-delay networks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/478—Four-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Filters That Use Time-Delay Elements (AREA)
JP14999577A 1976-12-17 1977-12-15 Double strip electrode for charge transfer device Granted JPS5375878A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA268,093A CA1080355A (fr) 1976-12-17 1976-12-17 Electrode a double fente pour dispositif a transfert de charge

Publications (2)

Publication Number Publication Date
JPS5375878A JPS5375878A (en) 1978-07-05
JPS6135722B2 true JPS6135722B2 (fr) 1986-08-14

Family

ID=4107524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14999577A Granted JPS5375878A (en) 1976-12-17 1977-12-15 Double strip electrode for charge transfer device

Country Status (7)

Country Link
JP (1) JPS5375878A (fr)
CA (1) CA1080355A (fr)
DE (1) DE2755493A1 (fr)
FR (1) FR2374741A1 (fr)
GB (1) GB1552545A (fr)
NL (1) NL7712907A (fr)
SE (1) SE415615B (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2453470A1 (fr) * 1979-04-06 1980-10-31 Thomson Csf Dispositif de lecture et d'injection de charges electriques et application d'un tel dispositif

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3819958A (en) * 1972-11-03 1974-06-25 Texas Instruments Inc Charge transfer device analog matched filter
FR2302636A1 (fr) * 1975-02-28 1976-09-24 Thomson Csf Procede de filtrage de signaux analogiqu

Also Published As

Publication number Publication date
NL7712907A (nl) 1978-06-20
FR2374741B1 (fr) 1983-01-28
DE2755493A1 (de) 1978-06-22
FR2374741A1 (fr) 1978-07-13
SE7714368L (sv) 1978-06-18
GB1552545A (en) 1979-09-12
CA1080355A (fr) 1980-06-24
JPS5375878A (en) 1978-07-05
SE415615B (sv) 1980-10-13

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