JPS6146422B2 - - Google Patents

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Publication number
JPS6146422B2
JPS6146422B2 JP8527181A JP8527181A JPS6146422B2 JP S6146422 B2 JPS6146422 B2 JP S6146422B2 JP 8527181 A JP8527181 A JP 8527181A JP 8527181 A JP8527181 A JP 8527181A JP S6146422 B2 JPS6146422 B2 JP S6146422B2
Authority
JP
Japan
Prior art keywords
enamel
zircon
far
added
zircon crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8527181A
Other languages
Japanese (ja)
Other versions
JPS57200562A (en
Inventor
Kameichi Enshu
Nobutaka Yugawa
Tsukasa Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Takara Standard Co Ltd
Original Assignee
Takara Standard Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Takara Standard Co Ltd filed Critical Takara Standard Co Ltd
Priority to JP8527181A priority Critical patent/JPS57200562A/en
Publication of JPS57200562A publication Critical patent/JPS57200562A/en
Publication of JPS6146422B2 publication Critical patent/JPS6146422B2/ja
Granted legal-status Critical Current

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  • Resistance Heating (AREA)
  • Glass Compositions (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は、優れた遠赤外線放射特性を有する琺
瑯の製造方法に関する。 従来、遠赤外線放射体の製造方法としては、ジ
ルコン(ZrO2・SiO2)を主成分として酸化物等
を加えた混合物を磁器化温度で焼成する方法(特
公昭47−25010号公報参照)及びジルコンを溶融
した後、金属基体に吹きつけ溶着する方法ででき
たものがあつた。 前者の方法により得られた遠赤外線放射体は一
種の磁器である為、機械的に弱く、通電した際の
速熱性に劣る他長尺物の製作が不可能であるとと
もに500℃以上の冷熱使用でクラツクを生じ寿命
の点で好ましくなく、しかも10μ以上の波長にお
ける放射率が低くなるという欠点がある。 また後者の方法により得られた遠赤外線放射体
は、ライニング層が不均一となり、金属基体との
熱膨張率差が大きい為冷熱使用により剥離、クラ
ツク等を生じ寿命の点から好ましくない。更に、
後者の方法により得られた遠赤外線放射体は、放
射層の熱伝導率が大きく、冷熱使用等の熱衝撃に
対して強く、且つ機械的に強い等の特徴を有する
が3〜7μ及び15〜50μの範囲内における放射率
が小さく、強力な遠赤外線放射を行なうには不充
分である。 本発明は、機械的に強く、速熱性に優れ、剥
離、クラツク等の発生がなく、且つ広範囲に亘つ
て放射率を良好に保持し安価且つ容易に製造し得
る遠赤外線放射特性を有する琺瑯を提供すること
を目的とするものである。 そして、前記目的は粉末としたジルコン結晶を
琺瑯質被覆物に添加して琺瑯層放射体を形成する
ことにより達成されるのであり、このジルコン結
晶の添加は、フリツトを湿式粉砕してスリツプと
する前後の何れでもよいが、金属素地に施釉する
前でなければならない。また粉末のジルコンは、
所定量が結晶状態で琺瑯被覆物の組織中に留まる
ような量で加えるようにする。 金属素地への施釉に適したフリツト組成物は多
くの種類があり、また本発明の利用性は殆どフリ
ツト成分と関係がなく、これとは別個にジルコン
結晶を琺瑯被覆物中に混入することによつてジル
コンの結晶相を確保することを要旨とするもので
あるから、存在するジルコンの量は別として、使
用したフリツト又はフリツト類の組成もまたミル
添加物の組成も本発明の利用性に対して殆ど影響
を有しないことは明らかである。 従つて、本発明においては、ミル添加物として
添加するジルコン結晶の量を、焼成後少なくとも
添加したジルコンの一部が結晶状態のまゝで金属
素地上の琺瑯層中に残留し、優れた遠赤外線放射
特性を示すように選択することが必要である。 また、ジルコンをミル添加物として添加するよ
うにしたのは次の理由による。即ち、 フリツトを組成する原材料に直接ジルコンを添
加すると、フリツトの粘度を増加させ、また添加
量が多すぎると金属素地に使用する琺瑯フリツト
としては不適当なものとなることから約25重量%
以下にしなければならない。そしてこの場合、公
知の原料とジルコン結晶とを融解する際に長時間
に亘つて高温に保持されてジルコンが全てZrO2
とSiO2とになり、結晶状態のジルコンは全く残
留しないことになる為である。 第1図は、本発明の琺瑯を用いて製造した遠赤
外線放装置を示す一部切欠正面図であり、鉄パイ
プ、ステンレスパイプ等製の熱放射体1の内部
に、両端に電極2,2を有する発熱体3を挿通
し、MgO等耐熱絶縁性充填材4にて該発熱体3
を固定し、更に前記熱放射体1の両端部を気密材
5,5にてシールして成る、いわゆるシーズヒー
タにおいて熱放射体1の外表面に脱脂、酸洗、N
i付着、中和の前処理を施こした後、下地琺瑯
6′を施釉、焼成し、次いで遠赤外線放射効率の
良好な琺瑯を施釉し、短時間(約3分間)で焼成
することにより琺瑯層放射体6を形成する。 下地琺瑯6′及び琺瑯層放射体6に用いるフリ
ツトの組成は次のとおりである。 SiO2 36(重量%) Ba2O3 27 Na2O 18 Al2O3 7 CaO 4 K2O 4 CaF2 2 MoO2 1 NiO 0.5 CpO 0.5 また、下地琺瑯6′及び琺瑯層放射体6のミル
配合は次表のとおりである。
The present invention relates to a method for manufacturing enamel having excellent far-infrared radiation characteristics. Conventionally, far-infrared radiators have been manufactured by firing a mixture containing zircon (Z r O 2・S i O 2 ) as a main component and oxides etc. at a porcelain-forming temperature (Japanese Patent Publication No. 47-25010). (see the publication) and one made by melting zircon and then spraying and welding it onto a metal substrate. Since the far-infrared radiator obtained by the former method is a type of porcelain, it is mechanically weak and has poor heating properties when energized, and it is impossible to manufacture long objects, and it requires the use of cold heat of over 500℃. This is undesirable in terms of lifespan as it causes cracks in the process, and it also has the disadvantage of low emissivity at wavelengths of 10 μm or more. Further, in the far-infrared radiator obtained by the latter method, the lining layer is non-uniform, and the difference in coefficient of thermal expansion from the metal substrate is large, so that peeling, cracking, etc. occur when used in cold heat, which is undesirable from the viewpoint of longevity. Furthermore,
The far-infrared radiator obtained by the latter method has characteristics such as a high thermal conductivity of the radiation layer, strong resistance to thermal shock such as cold use, and mechanical strength. The emissivity within the 50μ range is small and is insufficient for powerful far-infrared radiation. The present invention provides an enamel that is mechanically strong, has excellent heat-fast properties, does not cause peeling or cracking, maintains good emissivity over a wide range, and has far-infrared radiation characteristics that can be manufactured cheaply and easily. The purpose is to provide The above object is achieved by adding powdered zircon crystals to the enamel coating to form an enamel layer radiator. Either of these steps is acceptable, but it must be done before the metal base is glazed. In addition, powdered zircon is
The amount to be added is such that a predetermined amount remains in the structure of the enamel coating in a crystalline state. There are many types of frit compositions suitable for glazing metal substrates, and the applicability of the present invention has little to do with the frit components; it is also possible to separately incorporate zircon crystals into the enamel coating. Therefore, since the purpose is to ensure the crystalline phase of zircon, apart from the amount of zircon present, the composition of the frit or frits used and the composition of the mill additives also affect the usability of the present invention. It is clear that it has little effect on Therefore, in the present invention, the amount of zircon crystals added as a mill additive is determined so that after firing, at least a part of the added zircon remains in the crystalline state in the enamel layer on the metal base, resulting in an excellent distance. It is necessary to select one that exhibits infrared radiation properties. The reason why zircon was added as a mill additive is as follows. That is, if zircon is added directly to the raw materials that make up the frit, it will increase the viscosity of the frit, and if the amount added is too large, it will become unsuitable as an enamel frit for use on metal substrates, so zircon should be added at approximately 25% by weight.
Must be as follows. In this case, when the known raw material and zircon crystals are melted, they are kept at a high temperature for a long time, and all the zircon is converted to Z r O 2
and S i O 2 , and no crystalline zircon remains. FIG. 1 is a partially cutaway front view showing a far-infrared radiation device manufactured using the enamel of the present invention. The heating element 3 having a
In a so-called sheathed heater, in which both ends of the heat radiator 1 are sealed with airtight materials 5, 5, the outer surface of the heat radiator 1 is degreased, pickled, and N
i After pre-treatment of adhesion and neutralization, the base enamel 6' is glazed and fired, and then an enamel with good far-infrared radiation efficiency is applied and fired for a short time (approximately 3 minutes) to make the enamel. A layer radiator 6 is formed. The composition of the frit used for the base enamel 6' and the enamel layer radiator 6 is as follows. S i O 2 36 (weight%) B a2 O 3 27 N a2 O 18 A l2 O 3 7 C a O 4 K 2 O 4 C a F 2 2 M o O 2 1 N i O 0.5 C p O 0.5 The mill compositions of the base enamel 6' and the enamel layer radiator 6 are shown in the following table.

【表】 一方、実施例と同量のジルコンをフリツト中
に混入融解させたものを従来例として作成し、こ
れらの遠赤外線放射エネルギーを測定したとこ
ろ、実施例は従来例と比して広範囲に亘つて高
い遠赤外線放射エネルギーを示し、また実施例
は従来例と比して広範囲にわたつて極めて高い遠
赤外線放射エネルギーを示した(第2図参照)。
尚、第2図においては比放射エネルギーを縦軸と
しているが、比較の対象としてはSiCを用いた
ものである。また、このとき各遠赤外線放射装置
の温度は表面温度が500℃となるようにしている 以上から明らかなように、同量のジルコンを添
加してもミル添加する方が遠赤外線放射特性が良
好であり、しかもジルコン結晶の添加量が多いほ
ど優れた遠赤外線放射特性を示している。またジ
ルコン結晶の添加量が約30重量部以下になると従
来例とほゞ同等の遠赤外線放射エネルギーしか放
出しなかつた。 また、実施例、の遠赤外線放射体は、発熱
体3に通電し始めて約10分後に一定温度に飽和
し、速熱性に優れている。 また、下地琺瑯と金属製熱放射体1との間にお
ける結合は、機械的結合及び化学的結合によつて
行なわれる為密着性に優れ、実際に冷熱サイクル
(室温〜600℃の冷熱500サイクル)を行なつても
剥離、クラツク等の発生は見られなかつた。更
に、実施例、においては従来例と比し耐熱水
性も向上していると思われる。 以上のように本発明は従来の琺瑯層形成工程を
そのまゝ使用し、ジルコンをミル添加するのみで
量産性、低価格性を損わず、機械的強度、速熱性
に優れ且つ、優れた遠赤外線放射特性を有する琺
瑯である。
[Table] On the other hand, when we created a conventional example by mixing and melting the same amount of zircon in the frit as in the example and measuring the far-infrared radiant energy of these frits, we found that the example had a wider range of energy than the conventional example. The example exhibited extremely high far-infrared radiant energy over a wide range compared to the conventional example (see Fig. 2).
In addition, in FIG. 2, the vertical axis is the specific radiation energy, but S i C is used as the object of comparison. Also, at this time, the temperature of each far-infrared radiation device is set so that the surface temperature is 500℃.As is clear from the above, even if the same amount of zircon is added, far-infrared radiation characteristics are better with mill addition. Moreover, the greater the amount of zircon crystal added, the better the far-infrared radiation characteristics. Furthermore, when the amount of zircon crystals added was less than about 30 parts by weight, far-infrared radiant energy almost equivalent to that of the conventional example was emitted. In addition, the far-infrared ray emitter of the example saturates to a constant temperature about 10 minutes after the heating element 3 starts being energized, and is excellent in rapid heating properties. In addition, the bond between the base enamel and the metal heat radiator 1 is achieved by mechanical bonding and chemical bonding, so it has excellent adhesion, and can actually be used for cooling and heating cycles (500 cycles of cooling and heating from room temperature to 600°C). No peeling, cracks, etc. were observed even after the above steps. Furthermore, in Examples, the hot water resistance seems to be improved compared to the conventional example. As described above, the present invention uses the conventional enamel layer forming process as it is, and only adds zircon in a mill, so it does not impair mass productivity and low cost, has excellent mechanical strength and rapid heating properties, and has excellent It is an enamel that has far-infrared radiation properties.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本発明の一実施例を示し、第1図は遠赤
外線放射装置を示す一部切欠正面図、第2図は本
発明琺瑯層放射体と従来琺瑯層放射体との遠赤外
線放射特性を示す図。
The drawings show an embodiment of the present invention, and FIG. 1 is a partially cutaway front view of a far-infrared radiator, and FIG. 2 shows the far-infrared radiation characteristics of the enamel layer radiator of the present invention and the conventional enamel layer radiator. Figure shown.

Claims (1)

【特許請求の範囲】[Claims] 1 金属素地への施釉に適し且つフリツト化した
琺瑯組成物を湿式粉砕してスリツプとし、該スリ
ツプ中のフリツト100重量部に対して30重量部以
上に相当するジルコン結晶と微量の成型可塑剤を
含有する配合物をミル添加し、該ジルコン結晶を
ミル添加したスリツプを金属素地上に施釉し焼成
してジルコン結晶の一部をZrO2とSiO2として琺
瑯層中に溶解させ、残余のジルコン結晶の残部を
琺瑯層中に分散させてジルコン結晶相として残留
させて成ることを特徴とする遠赤外線放射特性を
有する琺瑯。
1. A fritted enamel composition suitable for glazing metal substrates is wet-pulverized to form a slip, and zircon crystals and a trace amount of molding plasticizer are added in an amount equivalent to 30 parts by weight or more based on 100 parts by weight of the frit in the slip. The slip containing the zircon crystals is mill-added, and the slip containing the zircon crystals is glazed on a metal base and fired to dissolve a part of the zircon crystals as ZrO 2 and SiO 2 in the enamel layer, and the remaining zircon crystals are removed. An enamel having far-infrared radiation characteristics, characterized in that the remainder of the enamel is dispersed in an enamel layer and left as a zircon crystal phase.
JP8527181A 1981-06-02 1981-06-02 Manufacture of far-infrared radiation enamel body Granted JPS57200562A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8527181A JPS57200562A (en) 1981-06-02 1981-06-02 Manufacture of far-infrared radiation enamel body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8527181A JPS57200562A (en) 1981-06-02 1981-06-02 Manufacture of far-infrared radiation enamel body

Publications (2)

Publication Number Publication Date
JPS57200562A JPS57200562A (en) 1982-12-08
JPS6146422B2 true JPS6146422B2 (en) 1986-10-14

Family

ID=13853898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8527181A Granted JPS57200562A (en) 1981-06-02 1981-06-02 Manufacture of far-infrared radiation enamel body

Country Status (1)

Country Link
JP (1) JPS57200562A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63117928A (en) * 1986-11-07 1988-05-21 Masao Yamamoto Production of far infrared rays radiant enamel
JP7723426B2 (en) * 2023-01-25 2025-08-14 阪和ホーロー株式会社 Enamel products and enamel glazes

Also Published As

Publication number Publication date
JPS57200562A (en) 1982-12-08

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