JPS6148542B2 - - Google Patents
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- Publication number
- JPS6148542B2 JPS6148542B2 JP4973479A JP4973479A JPS6148542B2 JP S6148542 B2 JPS6148542 B2 JP S6148542B2 JP 4973479 A JP4973479 A JP 4973479A JP 4973479 A JP4973479 A JP 4973479A JP S6148542 B2 JPS6148542 B2 JP S6148542B2
- Authority
- JP
- Japan
- Prior art keywords
- acetylene
- polymer
- acetylene polymer
- electron
- electrical conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 59
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 59
- 229920000642 polymer Polymers 0.000 claims description 57
- 150000001875 compounds Chemical class 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 16
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 10
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 8
- PQLAYKMGZDUDLQ-UHFFFAOYSA-K aluminium bromide Chemical compound Br[Al](Br)Br PQLAYKMGZDUDLQ-UHFFFAOYSA-K 0.000 claims description 5
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 27
- 239000003054 catalyst Substances 0.000 description 14
- 239000000243 solution Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 238000006116 polymerization reaction Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000379 polymerizing effect Effects 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 150000003623 transition metal compounds Chemical class 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 239000013081 microcrystal Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 150000001491 aromatic compounds Chemical class 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- DCAYPVUWAIABOU-UHFFFAOYSA-N hexadecane Chemical compound CCCCCCCCCCCCCCCC DCAYPVUWAIABOU-UHFFFAOYSA-N 0.000 description 2
- 239000012456 homogeneous solution Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- -1 5 - cyclopentadienyl Chemical group 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 description 1
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
Description
【発明の詳細な説明】
本発明は、繊維状微結晶(フイブリル)構造を
有するアセチレン高重合体を特定の電子受容性化
合物で処理してなる高分子半導体に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a polymer semiconductor obtained by treating an acetylene polymer having a fibrous microcrystalline (fibril) structure with a specific electron-accepting compound.
チーグラー・ナツタ触媒でアセチレンを重合し
て得られる粉末状アセチレン高重合体は、電気伝
導度が約10-9Ω-1・cm-1のP型半導体であり、
種々の電気素子としてその有用性が知られてい
る。また、この粉末状アセチレン高重合体を電子
受容性化合物で処理すると、その電気伝導度が最
高3桁上昇することもすでに知られている〔D.J.
Berets et.al,Trans.Faraday.Soc.,64,823
(1968)〕。しかし、ここで用いられている粉末状
アセチレン高重合体は、非繊維状微結晶の集合体
であり、本発明で用いる繊維状微結晶のアセチレ
ン高重合体と分子鎖の形態が本質的に異なるた
め、得られる成形品はいずれも脆くて機械的強度
が充分満足すべきものではなく、また、電気伝導
度の幅も約10-9〜10-6Ω-1・cm-1と狭いため、電
気部品として使用する場合、その使用範囲が限定
されざるを得ないという難点を有する。 The powdered acetylene polymer obtained by polymerizing acetylene with a Ziegler-Natsuta catalyst is a P-type semiconductor with an electrical conductivity of approximately 10 -9 Ω -1 cm -1 .
Its usefulness as a variety of electrical elements is known. Furthermore, it is already known that when this powdered acetylene polymer is treated with an electron-accepting compound, its electrical conductivity increases by up to three orders of magnitude [DJ
Berets et.al, Trans.Faraday.Soc., 64 , 823
(1968)]. However, the powdery acetylene polymer used here is an aggregate of non-fibrous microcrystals, and the molecular chain morphology is essentially different from the fibrous microcrystalline acetylene polymer used in the present invention. Therefore, the resulting molded products are all brittle and do not have sufficient mechanical strength, and the range of electrical conductivity is narrow, approximately 10 -9 to 10 -6 Ω -1 cm -1 , so they are not suitable for electrical conductivity. When used as a component, it has the disadvantage that its scope of use is inevitably limited.
本発明者らは、上記の事情に鑑み、機械的強度
が大きく、かつ幅広い電気伝導度を有する高分子
半導体について種々検討した結果、本発明に到達
した。 In view of the above circumstances, the present inventors have arrived at the present invention as a result of various studies on polymer semiconductors having high mechanical strength and a wide range of electrical conductivity.
即ち、本発明は、繊維状微結晶構造を有するア
セチレン高重合体を三臭化アルミニウム、三臭化
ホウ素および三塩化ホウ素からなる群から選ばれ
た少なくとも一種の電子受容性化合物で処理して
なる高分子半導体に関する。 That is, the present invention is made by treating an acetylene polymer having a fibrous microcrystalline structure with at least one electron-accepting compound selected from the group consisting of aluminum tribromide, boron tribromide, and boron trichloride. Regarding polymer semiconductors.
本発明の高分子半導体は、繊維状微結晶構造を
有しているため、その機械的強度が大きいばかり
でなく、電子受容性化合物の種類と添加量を調節
することによつて、電気伝導度を10-9から1Ω
-1・cm-1までの広い範囲にわたつて制御すること
ができるから、工業的に極めて有用である。 Since the polymer semiconductor of the present invention has a fibrous microcrystalline structure, it not only has high mechanical strength, but also has electrical conductivity that can be adjusted by adjusting the type and amount of the electron-accepting compound. 10 -9 to 1Ω
It is extremely useful industrially because it can be controlled over a wide range up to -1 cm -1 .
本発明において用いられる繊維状微結晶構造を
有するアセチレン高重合体は、繊維状微結晶構造
を有するアセチレン高重合体であれば、いかなる
方法で製造されたものでも使用できる。具体的な
製造例としては、例えば次の方法をあげることが
できる。なお、ここでいう繊維状微結晶構造を有
するアセチレン高重合体とは、直径200〜30Åの
繊維状微結晶が無秩序に集合した結晶性の高重合
体であつて、シスまたはトランス共役二重結合の
つながりからなる直鎖状のアセチレン高重合体で
ある。 The acetylene polymer having a fibrous microcrystalline structure used in the present invention may be any acetylene polymer produced by any method as long as it has a fibrous microcrystalline structure. As a specific manufacturing example, the following method can be mentioned, for example. Note that the acetylene polymer having a fibrous microcrystalline structure referred to here is a crystalline polymer in which fibrous microcrystals with a diameter of 200 to 30 Å are assembled in a disordered manner, and has cis or trans conjugated double bonds. It is a linear acetylene polymer consisting of .
(1) 遷移金属化合物と有機金属化合物からなる触
媒系をトルエンのごとき芳香族炭化水素やヘキ
サデカンのごとき脂肪族炭化水素に溶解してな
る触媒溶液とアセチレンガスの自由表面近傍の
界面または固体表面にこの触媒溶液を塗布した
表面で重合を行なつて膜状および繊維状アセチ
レン高重合体を製造する方法(特公昭48−
32581号)
(2) ヘキサンを溶媒として、μ―(η1:η5―
cyclopentadienyl)―tris(η―
cyclopentadienyl)dititanium(Ti―Ti)
〔C5H4)5(C5H5)3Ti2〕なる特殊な遷移金属化合
物でアセチレンを重合してゲル状アセチレン高
重合体を製造する方法〔S・L・Hsu et・al・
J・chem・phys・,69(1)、106―111
(1978)〕
(3) 芳香族系化合物を重合溶媒して遷移金属化合
物と有機金属化合物を主成分とする触媒系を用
い、遷移金属化合物を芳香族系化合物1に対
して0.0001〜0.1モル濃度で使用し、且つ撹拌
下でアセチレンを重合してアセチレン高重合体
のゲル状物を製造する方法。(1) A catalyst solution prepared by dissolving a catalyst system consisting of a transition metal compound and an organometallic compound in an aromatic hydrocarbon such as toluene or an aliphatic hydrocarbon such as hexadecane and an acetylene gas at the interface near the free surface or on a solid surface. A method for producing membranous and fibrous acetylene polymers by polymerizing on the surface coated with this catalyst solution (Japanese Patent Publication No. 1973-
32581) (2) Using hexane as a solvent, μ-(η 1 :η 5 -
cyclopentadienyl)―tris(η―
cyclopentadienyl) dititanium (Ti-Ti)
A method for producing a gel-like acetylene polymer by polymerizing acetylene with a special transition metal compound [C 5 H 4 ) 5 (C 5 H 5 ) 3 Ti 2 ] [S.L.Hsu et.al.
J Chem Phys, 69 (1), 106-111
(1978)] (3) Using an aromatic compound as a polymerization solvent and a catalyst system mainly composed of a transition metal compound and an organometallic compound, the transition metal compound is added at a concentration of 0.0001 to 0.1 molar relative to 1 part of the aromatic compound. A method for producing a gel-like acetylene polymer by polymerizing acetylene under stirring.
上記(2)および(3)の方法で得られるアセチレン
高重合体のゲル状物は、加圧成形等の通常の成
形方法で任意の形状に成形して使用される。 The acetylene polymer gel obtained by the methods (2) and (3) above is used after being molded into any shape by a normal molding method such as pressure molding.
本発明において用いられる電子受容性化合物
は、三臭化アルミニウム、三臭化ホウ素および
三塩化ホウ素であり、これらは二種以上混合し
て使用してもよい。 The electron-accepting compounds used in the present invention are aluminum tribromide, boron tribromide, and boron trichloride, and two or more of these may be used as a mixture.
繊維状微結晶構造を有するアセチレン高重合
体を上記電子受容性化合物で処理する方法とし
ては、例えば(1)電子受容性化合物中に直接アセ
チレン高重合体を浸漬する方法、(2)電子受容性
化合物をこれと反応しない有機または有機溶剤
中に置き、アセチレン高重合体をこの溶液剤中
に浸漬し溶剤中を拡散する電子受容性化合物で
アセチレン高重合体を処理する方法(この処理
方法では、使用する溶剤によつて電気伝導度に
差が認められる場合もある)(3)アセチレン高重
合体を真空中または不活性気体中に置いて、電
子受容性化合物の蒸気でアセチレン高重合体を
処理する方法、
(4) 真空中または不活性気体中で電子受容性化合
物を融点以上に加熱して、溶融液中にアセチレ
ン高重合体を浸漬する方法等があげられる。 Examples of methods for treating an acetylene polymer having a fibrous microcrystalline structure with the electron-accepting compound include (1) directly immersing the acetylene polymer in an electron-accepting compound; (2) electron-accepting A method in which the acetylene polymer is treated with an electron-accepting compound by placing the compound in an organic or organic solvent that does not react with the compound, immersing the acetylene polymer in this solution, and diffusing the acetylene polymer in the solvent. (Differences in electrical conductivity may be observed depending on the solvent used) (3) Place the acetylene polymer in vacuum or in an inert gas, and treat the acetylene polymer with vapor of an electron-accepting compound. (4) A method in which an electron-accepting compound is heated above its melting point in vacuum or in an inert gas, and the acetylene polymer is immersed in the melt.
好ましい処理温度は、処理方法および電子受容
性化合物の種類によつて異なるので一概に決めら
れないが、一般的には、0℃〜300℃の範囲内で
ある。 Although the preferred treatment temperature cannot be determined unconditionally since it varies depending on the treatment method and the type of electron-accepting compound, it is generally within the range of 0°C to 300°C.
これら電子受容性化合物の処理によつて、アセ
チレン高重合体の重量は最高100%増加する。処
理後のアセチレン高重合体の電気伝導度は重量増
加と共に増加し、電気伝導度は最高1Ω-1・cm-1
にまで達する。 Treatment with these electron-accepting compounds increases the weight of the acetylene polymer by up to 100%. The electrical conductivity of the acetylene polymer after treatment increases with increasing weight, and the electrical conductivity reaches a maximum of 1 Ω -1 cm -1
reach up to.
このようにして処理されたアセチレン高重合体
は、P型半導体であり、そのままでも可撓性のあ
る電気・電子素子として有用な高分子半導体とし
て使用することができるばかりでなく、n型半導
体と組み合せて容易にP―nヘテロ接合素子を作
ることもできる。また、アセチレン高重合体のバ
ンド・ギヤツプ・エネルギーは約1.6evであり、
種々の光・電気変換素子としても有用である。 The acetylene polymer treated in this way is a P-type semiconductor, and can not only be used as a polymer semiconductor useful as a flexible electric/electronic device as it is, but also can be used as an n-type semiconductor. A Pn heterojunction element can also be easily made by combining them. In addition, the band gap energy of acetylene high polymer is approximately 1.6ev,
It is also useful as various optical/electrical conversion elements.
以下、実施例によつて本発明をさらに詳しく説
明する。 Hereinafter, the present invention will be explained in more detail with reference to Examples.
実施例 1
窒素雰囲気下で内容積500mlのガラス製反応容
器に5.1ml(15.0ミリモル)のチタニウムテトラ
ブトキサイドを加え、20.0mlのトルエンに溶し、
5.4ml(40ミリモル)のトリエチルアルミニウム
を撹拌しながら加えて反応させ触媒溶液を調製し
た。Example 1 5.1 ml (15.0 mmol) of titanium tetrabutoxide was added to a glass reaction vessel with an internal volume of 500 ml under a nitrogen atmosphere, and dissolved in 20.0 ml of toluene.
A catalyst solution was prepared by adding 5.4 ml (40 mmol) of triethylaluminum with stirring and reacting.
この反応容器を液体窒素で冷却して、系中の窒
素ガスを真空ポンプで排気し、次いでこの反応容
器を−78℃に冷却した。 The reaction vessel was cooled with liquid nitrogen, the nitrogen gas in the system was evacuated using a vacuum pump, and then the reaction vessel was cooled to -78°C.
反応容器を回転させて触媒溶液を反応容器の内
壁に均一に付着させた後、反応容器を静置させた
状態で直ちに1気圧の圧力の精製アセチレンガス
を導入して重合を開始した。重合開始と同時に反
応容器の内壁に金属光沢を有するアセチレン高重
合体が析出した。−78℃の温度で、アセチレン圧
を1気圧の状態に保つて1時間重合反応を行なつ
た後、未反応のアセチレンを真空ポンプで排気し
て重合を停止した。窒素雰囲気下で残存触媒溶液
を注射器で除去した後、−78℃に保つたまま精製
トルエン100mlで6回洗浄を繰り返し、次いで室
温で真空乾燥した。 After the reaction vessel was rotated to uniformly adhere the catalyst solution to the inner wall of the reaction vessel, purified acetylene gas at a pressure of 1 atmosphere was immediately introduced while the reaction vessel was left standing to initiate polymerization. Simultaneously with the initiation of polymerization, an acetylene high polymer with metallic luster was deposited on the inner wall of the reaction vessel. After the polymerization reaction was carried out for 1 hour at a temperature of -78° C. while maintaining the acetylene pressure at 1 atm, unreacted acetylene was evacuated with a vacuum pump to stop the polymerization. After removing the remaining catalyst solution with a syringe under a nitrogen atmosphere, washing was repeated six times with 100 ml of purified toluene while keeping the temperature at -78°C, and then vacuum drying was performed at room temperature.
触媒溶液が反応器内壁に付着した部分に、その
部分と面積が等しく、厚さ90μmでシス含量が98
%の膜状アセチレン高重合体が得られた。 The part where the catalyst solution adhered to the inner wall of the reactor has an area equal to that part, a thickness of 90 μm, and a cis content of 98
% membranous acetylene polymer was obtained.
この膜状アセチレン高重合体の電気伝導度(直
流四端子法)は、20℃で2.5×10-8Ω-1・cm-1あつ
た。 The electrical conductivity (DC four-probe method) of this film-like acetylene polymer was 2.5×10 -8 Ω -1 cm -1 at 20°C.
また膜状アセチレン高重合体を走査型電子顕微
鏡で観察したところ、この膜状アセチレン高重合
体は、径が200〜300Åのフイブリルの集合体であ
つた。 Furthermore, when the film-like acetylene polymer was observed using a scanning electron microscope, it was found that the film-like acetylene polymer was an aggregate of fibrils with a diameter of 200 to 300 Å.
窒素ガス雰囲気下の100mlの反応器に、トルエ
ン50ml、三臭化アルミニウム5.0grを仕込ん
だ。溶液は薄黄色の均一溶液であつた。この溶液
に、前記の膜状アセチレン高重合体を浸漬し、室
温で静置したまま5時間処理を行なつた。 50 ml of toluene and 5.0 gr of aluminum tribromide were charged into a 100 ml reactor under a nitrogen gas atmosphere. The solution was a pale yellow homogeneous solution. The film-like acetylene polymer was immersed in this solution and left to stand at room temperature for 5 hours.
処理後、膜状アセチレン高重合体を100mlのト
ルエンで3回洗滌し、次いで、真空乾燥して黒褐
色のアセチレン高重合体を得た。 After the treatment, the film-like acetylene high polymer was washed three times with 100 ml of toluene, and then vacuum-dried to obtain a dark brown acetylene high polymer.
処理後のアセチレン高重合体は重量が9.7%増
加し、電気伝導度が4.13×10-11Ω-1・cm-1のP型
半導体であつた。 After the treatment, the acetylene polymer had a weight increase of 9.7% and was a P-type semiconductor with an electrical conductivity of 4.13×10 −1 1Ω −1 ·cm −1 .
実施例 2
実施例1で得られた膜状アセチレン高重合体を
ガラス製反応器に入れ、真空ポンプで系中の空気
を除去した後、三塩化ホウ素(市販品を真空蒸留
したもの)を−30℃に冷却し、その温度での三塩
ホウ素の蒸気圧の蒸気を反応器に導入して2時間
処理を行なつた。Example 2 The film-like acetylene polymer obtained in Example 1 was placed in a glass reactor, and after removing air from the system with a vacuum pump, boron trichloride (commercially available product vacuum distilled) was added to - The reactor was cooled to 30° C., and the vapor at the vapor pressure of boron trichloride at that temperature was introduced into the reactor for treatment for 2 hours.
処理後、未反応の三塩化ホウ素を真空ポンプで
系外に排気した。処理後のアセチレン高重合体は
重量が56%増加し、電気伝導度が8.5×10-11Ω
-1・cm-1のP型半導体であつた。 After the treatment, unreacted boron trichloride was exhausted from the system using a vacuum pump. After treatment, the acetylene polymer has a weight increase of 56% and an electrical conductivity of 8.5×10 -11 Ω.
It was a P-type semiconductor with -1 cm -1 .
実施例 3
実施例2で電子受容性化合物として用いた三塩
化ホウ素の代りに三臭化ホウ素を用た以外は、実
施例2と全く同様な方法で膜状アセチレン高重合
体を処理した。処理後のアセチレン高重合体は重
量が23%増加し、電気伝導度が1.2×10-1Ω-1・
cm-1のP型半導体であつた。Example 3 A membranous acetylene polymer was treated in exactly the same manner as in Example 2, except that boron tribromide was used in place of the boron trichloride used as the electron-accepting compound in Example 2. After treatment, the acetylene polymer increased in weight by 23% and had an electrical conductivity of 1.2×10 -1 Ω -1 .
cm -1 P-type semiconductor.
実施例 4
窒素ガスで完全に置換した1のガラス製反応
器に、重合溶媒として常法にしたがつて精製した
トルエン200ml、触媒としてテトラブトキシチタ
ニウム2.94ミリモルおよびトリエチルアルミニウ
ム7.34ミリモルを順次に室温で仕込んで触媒溶液
を調製した。触媒溶液は均一溶液であつた。反応
器を液体窒素で冷却して系中の窒素ガスを真空ポ
ンプで排気した。Example 4 200 ml of toluene purified in a conventional manner as a polymerization solvent, 2.94 mmol of tetrabutoxytitanium and 7.34 mmol of triethylaluminum as catalysts were sequentially charged at room temperature into a glass reactor 1 that was completely purged with nitrogen gas. A catalyst solution was prepared. The catalyst solution was a homogeneous solution. The reactor was cooled with liquid nitrogen, and the nitrogen gas in the system was exhausted using a vacuum pump.
−78℃に反応器を冷却してマグネス・スターラ
ーで触媒溶液を撹拌しながら、1気圧の圧力の精
製アセチレンガスを吹き込んだ、重合反応の初期
に系全体は寒天状になり、撹拌が困難になつた。 The reactor was cooled to -78°C, and while stirring the catalyst solution with a magnetic stirrer, purified acetylene gas was blown in at a pressure of 1 atm. At the beginning of the polymerization reaction, the entire system became agar-like and stirring became difficult. Summer.
アセチレンガスを1気圧に保つたままで24時間
重合反応をそのまま継続した。系は赤紫色を呈し
た寒天状であつた。重合終了後、未反応のアセチ
レンガスを除去し、系の温度を−78℃に保つたま
ま200mlの精製トルエンで4回繰り返し洗滌し
た。洗滌後も溶液はやや褐色をおび、触媒は完全
に除去されなかつた。トルエン中で膨潤したゲル
状アセチレン高重合体は、繊維状微結晶が絡み合
つた均一チツプ状であり、粉末状や塊状のポリマ
ーは生成していなかつた。 The polymerization reaction was continued for 24 hours while maintaining the acetylene gas at 1 atm. The system was agar-like with a reddish-purple color. After the polymerization was completed, unreacted acetylene gas was removed, and the system was repeatedly washed four times with 200 ml of purified toluene while maintaining the temperature at -78°C. Even after washing, the solution remained slightly brownish and the catalyst was not completely removed. The gel-like acetylene polymer swollen in toluene was in the form of uniform chips with intertwined fibrous microcrystals, and no powder or lump-like polymer was produced.
均一ゲル状物の一部を取り出して乾燥しゲル状
物中のアセチレン高重合体の量を測定したとこ
ろ、ゲル状物中にアセチレン高重合体は10重量%
含有されていた。得られたアセチレン高重合体の
シス含量は98%であつた。 When a part of the homogeneous gel was taken out and dried and the amount of acetylene high polymer in the gel was measured, the amount of acetylene high polymer in the gel was 10% by weight.
It was contained. The resulting acetylene polymer had a cis content of 98%.
上記のゲル状物を厚さ10mm、縦100mm、横50mm
の型枠に入れ、クロムメツキしたフエロ板ではさ
んで、室温で100Kg/cm2の圧力でトルエンを除き
ながらプレス成形して、膜厚が5mmの可撓性のあ
る強靭なフイルム状成形品を得た。 The above gel-like material is 10mm thick, 100mm long, and 50mm wide.
It was placed in a mold, sandwiched between chrome-plated ferro plates, and press-molded at room temperature under a pressure of 100 kg/cm 2 while removing toluene to obtain a flexible and strong film-like molded product with a film thickness of 5 mm. Ta.
このフイルム状成形品は電気伝導度(直流四端
子法で測定)は、20℃で5×10-8Ω-1・cm-1のP
型半導体であつた。 This film-shaped molded product has an electrical conductivity (measured using the DC four-probe method) of 5×10 -8 Ω -1 cm -1 at 20°C.
It was a type semiconductor.
得られた成形品を実施例1と同様な方法で三臭
化アルミニウムで処理した。 The obtained molded article was treated with aluminum tribromide in the same manner as in Example 1.
処理後のアセチレン高重合体成形品は、電気伝
導度が1.02Ω-1・cm-1のP型半導体であつた。 The acetylene polymer molded product after the treatment was a P-type semiconductor with an electrical conductivity of 1.02Ω −1 ·cm −1 .
実施例 5
実施例4で得られたアセチレン高重合体のフイ
ルム状成形品を実施例2で行つたと同様な方法で
三塩化ホウ素処理した。Example 5 The film-shaped molded acetylene polymer obtained in Example 4 was treated with boron trichloride in the same manner as in Example 2.
処理後のアセチレン高重合体は重量が62%増加
し、電気伝導度が1.32Ω-1・cm-1のP型半導体で
あつた。 After the treatment, the acetylene polymer had a weight increase of 62% and was a P-type semiconductor with an electrical conductivity of 1.32 Ω -1 ·cm -1 .
実施例 6
実施例4で得られたアセチレン高重合体のフイ
ルム状成形品を実施例3で行つたと同様な方法で
三臭化ホウ素処理した。Example 6 The film-shaped molded acetylene polymer obtained in Example 4 was treated with boron tribromide in the same manner as in Example 3.
処理後のアセチレン高重合体は重量が27%増加
し、電気伝導度が2.7×10-1Ω-1・cm-1のP型半導
体であつた。 After the treatment, the acetylene polymer had a weight increase of 27% and was a P-type semiconductor with an electrical conductivity of 2.7×10 −1 Ω −1 ·cm −1 .
Claims (1)
セチレン高重合体を三臭化アルミニウム、三臭化
ホウ素および三塩化ホウ素からなる群から選ばれ
た少なくとも一種の電子受容性化合物で処理して
なる高分子半導体。1. A polymer obtained by treating an acetylene polymer having a fibrous microcrystalline (fibril) structure with at least one electron-accepting compound selected from the group consisting of aluminum tribromide, boron tribromide, and boron trichloride. semiconductor.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4973479A JPS55143702A (en) | 1979-04-24 | 1979-04-24 | High molecular semiconductor |
| DE3041420A DE3041420C1 (en) | 1979-03-29 | 1980-03-28 | Process for the production of electrically conductive acetylene high polymers |
| US06/224,518 US4487709A (en) | 1979-03-29 | 1980-03-28 | Process for producing electrically conductive high polymer of acetylene |
| GB8037339A GB2061291B (en) | 1979-03-29 | 1980-03-28 | Process for preparing highly conductive acetylene high polymer |
| PCT/JP1980/000052 WO1980002146A1 (en) | 1979-03-29 | 1980-03-28 | Process for preparing highly conductive acetylene high polymer |
| EP80900609A EP0026234B1 (en) | 1979-03-29 | 1980-10-23 | Process for preparing highly conductive acetylene high polymer |
| US06/657,266 US4594180A (en) | 1979-03-29 | 1984-10-03 | Process for producing electrically conductive high polymer of acetylene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4973479A JPS55143702A (en) | 1979-04-24 | 1979-04-24 | High molecular semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55143702A JPS55143702A (en) | 1980-11-10 |
| JPS6148542B2 true JPS6148542B2 (en) | 1986-10-24 |
Family
ID=12839412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4973479A Granted JPS55143702A (en) | 1979-03-29 | 1979-04-24 | High molecular semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55143702A (en) |
-
1979
- 1979-04-24 JP JP4973479A patent/JPS55143702A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55143702A (en) | 1980-11-10 |
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