JPS6150352A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6150352A
JPS6150352A JP59171452A JP17145284A JPS6150352A JP S6150352 A JPS6150352 A JP S6150352A JP 59171452 A JP59171452 A JP 59171452A JP 17145284 A JP17145284 A JP 17145284A JP S6150352 A JPS6150352 A JP S6150352A
Authority
JP
Japan
Prior art keywords
resin
eprom
semiconductor chip
chip
lid member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59171452A
Other languages
Japanese (ja)
Inventor
Yutaka Okuaki
奥秋 裕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP59171452A priority Critical patent/JPS6150352A/en
Publication of JPS6150352A publication Critical patent/JPS6150352A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • G11C16/18Circuits for erasing optically
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/015Manufacture or treatment of bond wires
    • H10W72/01515Forming coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Non-Volatile Memory (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (産業上の利用分野) この発明は中空プラスチック・タイプ・パッケージに搭
載された半導体装置に関する。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) This invention relates to a semiconductor device mounted in a hollow plastic type package.

(従来の技術) 従来、一般的に知られたパッケージ方式である、中空プ
ラスチック・タイプ・パッケージはモールディングによ
って、半導体素子を搭載する中空部、いわゆるキャビテ
ィ部と外部導出用の金属細線接続部を中空にした樹脂封
止したパッケージである。
(Prior art) The hollow plastic type package, which is a conventionally well-known packaging method, uses molding to form a hollow part in which a semiconductor element is mounted, a so-called cavity part, and a thin metal wire connection part for leading to the outside. It is a resin-sealed package.

これらの従来の中空プラスチック・タイプ・パッケージ
を用いたEPROM装置(紫外線消去形プログラマブル
リード・オンリ・メモリ)について第2図によって説明
する。この第2図において、中空プラスチック・タイプ
・パッケージに使用されているリードフレーム1は一般
的に知られた形状の金、銀などのスポットメッキが々さ
れていて、これらを用いて中空プラスチック・タイプ・
パッケージを製造する場合中空部2を形成する部分は、
モールディング金型によってリードフレーム1が金型に
よって圧縮保持されて、モールド樹脂が圧入されないの
で中空部2が形成される。
An EPROM device (ultraviolet erasable programmable read only memory) using these conventional hollow plastic type packages will be explained with reference to FIG. In Fig. 2, the lead frame 1 used in the hollow plastic type package is spot-plated with gold, silver, etc. in a generally known shape, and these are used to form the hollow plastic type package.・
When manufacturing a package, the part that forms the hollow part 2 is
Since the lead frame 1 is compressed and held by the molding die and the molding resin is not press-fitted, a hollow portion 2 is formed.

このように、中空構造になった形状に圧縮成形された中
空プラスチック・タイプ・パッケージ3に半導体チップ
4を、 hgペーストまたは樹脂ペーストによって載置
する。この中空グラスチック・タイプ・パッケージ3は
樹脂製であるので高温、たとえば共晶による半導体チッ
プの接着はできない0 半導体チップ4の表面外部接続電極と外部導出リード5
とは金属細線6によって接続、導出されている。半導体
チップ4は外部から保護する蓋部材7によって密封保護
されテイル。
In this manner, the semiconductor chip 4 is mounted on the hollow plastic type package 3 which has been compression molded into a hollow structure using hg paste or resin paste. Since this hollow glass type package 3 is made of resin, the semiconductor chip cannot be bonded at high temperatures, for example, by eutectic bonding.0 Surface external connection electrodes of the semiconductor chip 4 and external lead leads 5
and are connected and led out by a thin metal wire 6. The semiconductor chip 4 is sealed and protected by a lid member 7 that protects it from the outside.

この蓋部材7はエポキシ樹脂で接着され、EPROMチ
ップの紫外線消去用窓として用いらnる。しかし、中空
プラスチック・タイプ・パッケージ3によって製造され
た蓋部材7の材質はアルミナ、または石英ガラスが主に
用いられるが、紫外線透過性であれば、樹脂などでもよ
い。
This cover member 7 is bonded with epoxy resin and is used as a window for erasing ultraviolet rays of the EPROM chip. However, the material of the lid member 7 manufactured by the hollow plastic type package 3 is mainly alumina or quartz glass, but resin or the like may be used as long as it is transparent to ultraviolet rays.

(発明が解決しようとする問題点) EPROM半導体装置の信頼性試験を高温高湿で行うと
、外部導出リード5とパッケージ樹脂との界面8から水
分が中をs2に浸入する。浸入した水分とともに腐食性
(Na+、KO+、ci−)イオンも同時に浸入して来
るので、半導体チップ4の外部接続電極のアルミ配線を
腐食断線させてしまうという欠点があった。さらに、蓋
部材7の接着部より、腐食性イオンが侵入してくるとい
う問題もおる。
(Problems to be Solved by the Invention) When a reliability test of an EPROM semiconductor device is performed at high temperature and high humidity, moisture infiltrates into s2 from the interface 8 between the external lead 5 and the package resin. Since corrosive (Na+, KO+, ci-) ions also enter together with the infiltrated moisture, there is a drawback that the aluminum wiring of the external connection electrode of the semiconductor chip 4 is corroded and disconnected. Furthermore, there is also the problem that corrosive ions enter through the bonded portion of the lid member 7.

1      一方、先行技術文献として、特願昭58
−183086号明細書には、EPROMをサーデイッ
グタイプよ抄、プラスチックモールド化する技術が開示
されている。すなわち、リードフレームの素子搭載部に
EPROMチップを着設する工程とその後このEPRO
Mチップとリードフレームの端子部とを金属細線で接続
する工程とを含むE P ROM装置において、EPR
OMチップを収納できる大きさの開口部を有し、少なく
とも底部が紫外線を透過する材料で構成された有底筺体
の底部とEPROMチップが対向するように金属線Mを
接続し7’CIJ−ドフレームを開口部に載置し、その
後、有底筺体内に紫外線を透過する樹脂を注入し、その
後樹脂成形型内にリードフレームの端子部の一部が突出
し、この有底筺体の底部外側表面が内壁と密接するよう
に配置し、樹脂成形型内の残部に絶縁性樹脂を注入する
ようにしたものが開示されている。
1 On the other hand, as a prior art document,
No. 183086 discloses a technique for molding an EPROM into a Cerdaig type plastic mold. That is, the process of mounting the EPROM chip on the element mounting part of the lead frame, and then
In an E P ROM device that includes the process of connecting the M chip and the terminal portion of the lead frame with a thin metal wire, the EPR
A metal wire M is connected so that the EPROM chip faces the bottom of a bottomed case that has an opening large enough to accommodate the OM chip and is made of a material that transmits ultraviolet rays at least at the bottom. The frame is placed in the opening, and then a resin that transmits ultraviolet light is injected into the bottomed housing, and then a part of the terminal part of the lead frame protrudes into the resin mold, and the bottom outer surface of the bottomed housing is Disclosed is a resin molding mold in which the resin molding mold is arranged so as to be in close contact with the inner wall, and an insulating resin is injected into the remaining part of the resin molding mold.

tた、別の先行技術文献として、特願1i1358−2
24393号明細書には、絶縁性基板の主表面上に導電
性配線パターンを形成し、この絶縁性基板のチップ搭載
領域に紫外線照射面を上にしてEPROMチップを配置
し、このEPROMチップの電極と導電性配線パターン
とを金属細線で接続し、紫外線透過性のガラス質−1f
cは合成樹脂のキャップでEPROMチップと金属細線
による配縁部を覆って密封し、このキャップを絶縁性基
板に固定したものが開示されている。
As another prior art document, Japanese Patent Application No. 1i1358-2
24393, a conductive wiring pattern is formed on the main surface of an insulating substrate, an EPROM chip is placed in the chip mounting area of the insulating substrate with the ultraviolet irradiation surface facing upward, and the electrodes of the EPROM chip are and a conductive wiring pattern are connected with a thin metal wire, and UV-transparent glass-1F
No. c discloses a synthetic resin cap that covers and seals the EPROM chip and the wiring portion made of thin metal wires, and this cap is fixed to an insulating substrate.

(問題点を解決するための手段) この発明は、上記各先行技術文献に開示された技術思想
とは異なり、中空プラスチック・タイプパッケージに搭
載されたEPROM半導体チップの周囲およびその搭載
部に第1の樹脂を充填するとともに、紫外線透過性蓋部
材で密封したものである。
(Means for Solving the Problems) This invention differs from the technical ideas disclosed in the above-mentioned prior art documents. The container is filled with resin and sealed with an ultraviolet-transparent lid member.

(作用) この発明によれば、以上のように半導体装置を構成した
ので、FJPROM半導体テッグのリードと樹脂の界面
から浸入してくる水分と腐食性イオンなどによりEPR
OM半導体チップ表面配線金属の腐食断#!を防止でき
るもので心る。
(Function) According to the present invention, since the semiconductor device is configured as described above, EPR is caused by moisture and corrosive ions that enter from the interface between the lead and resin of the FJPROM semiconductor TEG.
Corrosion breakage of OM semiconductor chip surface wiring metal #! Take care to do what you can to prevent this.

(実施例) 以下、この発明の半導体装置の実施例について図面に基
づき説明する。第1図はその一実施例の断面図である。
(Embodiments) Hereinafter, embodiments of the semiconductor device of the present invention will be described based on the drawings. FIG. 1 is a sectional view of one embodiment.

この第1図において、この中空グラスチック・タイプ・
パッケージ1oを用いたEP ROM装置20は、アイ
ランド21にAIペーストによってEPROM半導体チ
ッグ2チッ載置されており、とのEPROM半導体チッ
プ220表面の外部接続アルミ電極は外部導出リード2
3の先端に金属線#!24によって接続導出されている
In this Figure 1, this hollow glass type
In the EPROM device 20 using the package 1o, two EPROM semiconductor chips are mounted on the island 21 using AI paste, and the external connection aluminum electrode on the surface of the EPROM semiconductor chip 220 is connected to the external lead 2.
Metal wire #3 at the tip! The connection is derived by 24.

前記EPROM半導体テッグ22の周辺に第1の樹脂と
してのシリコン樹脂25を充填して、外部導邑リード2
3とシリコン樹脂25の界面26がら没入して来る水分
、腐食性イオンなどがらEPROM半導体チップ220
表面の外部接続アルミ電極の腐食を防止する。
The periphery of the EPROM semiconductor tag 22 is filled with silicone resin 25 as a first resin, and external conductive leads 2 are filled.
Water, corrosive ions, etc. that enter through the interface 26 between the EPROM semiconductor chip 220 and the silicone resin 25
Prevents corrosion of externally connected aluminum electrodes on the surface.

第1の樹脂としてのシリコン樹脂25は密着性、信頼性
の高い樹脂でめれば7リコ/樹脂に限定されない。
The silicone resin 25 as the first resin is not limited to 7 Lico/resin as long as it is a resin with high adhesiveness and reliability.

上述のようにして、充填された7リコ/樹肛゛25の上
にEPROM半導体チッグ2チッ紫外窮透過性蓋部材2
7との空隙に、第2の樹脂としての紫外線透過性樹脂2
8を充填すると、さらに信頼性が高いEPROM半導体
装置が得られる。
As described above, the ultraviolet-transmissive cover member 2 of the EPROM semiconductor chip 2 is placed on top of the 7-liquid/tree canal 25 filled.
In the gap between 7 and 7, ultraviolet-transparent resin 2 as a second resin is placed.
If the number of cells is filled with 8, a more reliable EPROM semiconductor device can be obtained.

また、前記紫外線透過性蓋部材27Fi中空プラスチツ
ク・タイプ・パッケージ10にエポキシ樹脂によって接
着固定されている。
Further, the ultraviolet-transparent lid member 27Fi is adhesively fixed to the hollow plastic type package 10 with epoxy resin.

この発明の半導体装置の実施例の製造方法は、中空プラ
スチック・タイプ・パッケージ10のアイランド21に
EPROM半導体チップ22をApペーストで載置して
、金属細線24で外部導出リード23の先端にEPRO
M半導体チップ22を接続する。
The manufacturing method of the embodiment of the semiconductor device of the present invention is to place an EPROM semiconductor chip 22 on an island 21 of a hollow plastic type package 10 using Ap paste, and connect an EPROM semiconductor chip 22 to the tip of an external lead 23 using a thin metal wire 24.
M semiconductor chip 22 is connected.

その後、EPROM半導体チップ220表面にかぶさら
ない位いの充填量の第1の樹脂としてのシリコン樹脂2
5を充填する(例えば東し、JCR6110(商品名)
)。
Thereafter, a silicone resin 2 as a first resin is applied in an amount that does not cover the surface of the EPROM semiconductor chip 220.
5 (for example, East, JCR6110 (product name)
).

しかし、第1の樹脂として、紫外線透過性樹脂(fcと
えば、東し、JCR6122)を用い次項l   合に
は、中空部またはEPROM半導体チップ22を全体に
包囲する充填量でもよいことは一般的に考えられる。
However, if an ultraviolet-transparent resin (such as FC, Toshiba, JCR6122) is used as the first resin, it is generally possible to fill the hollow part or the filling amount to completely surround the EPROM semiconductor chip 22. It can be considered.

前記シリコン樹脂25を充填後、EPROM半導体チッ
プ22と紫外線透過性蓋部材27の空隙に紫外線透過性
樹脂24を充填し、その後紫外線透過性材料にて構成さ
れた紫外線透過性蓋部材27をエポキシ樹脂接着剤によ
って接着して、半導体EPROM装置が製造される。
After filling the silicone resin 25, the gap between the EPROM semiconductor chip 22 and the UV-transparent lid member 27 is filled with UV-transparent resin 24, and then the UV-transparent lid member 27 made of a UV-transparent material is filled with epoxy resin. A semiconductor EPROM device is manufactured by bonding with an adhesive.

このようなエポキシ樹脂接着剤や、シリコン樹脂の硬化
は150〜200℃で1時間から2時間で硬化するので
、中空プラスチック・タイプ・パッケージ構成エポキシ
樹脂を変質させることはない。
Since such epoxy resin adhesives and silicone resins are cured in 1 to 2 hours at 150 to 200°C, the epoxy resins forming the hollow plastic type package are not altered in quality.

なお、紫外線透過性樹脂28の充填は、なくても信頼性
は向上するが充填した方がよい。この充填は、上部から
ボツテイングによって充填する。
Note that although reliability can be improved without filling the ultraviolet-transparent resin 28, it is better to fill it. This filling is done by botting from the top.

(発明の効果) この発明は以上説明したように、中空グラスチック・タ
イプ・パッケージに搭載され7ICEFROM半導体チ
ップの周囲およびその搭載部に第1の樹脂を充填し、紫
外線透過性蓋部材で密封したので、外部からリードと樹
脂界面または樹脂面からの水分、腐食性イオンなどの浸
入に対して、極めて高い信頼性を得ることができる。
(Effects of the Invention) As explained above, the present invention has a structure in which the periphery of the 7ICEFROM semiconductor chip mounted in a hollow glass type package and its mounting portion are filled with a first resin, and the first resin is sealed with an ultraviolet-transparent lid member. Therefore, extremely high reliability can be obtained against intrusion of moisture, corrosive ions, etc. from the outside from the interface between the lead and the resin or from the resin surface.

ま几、EPROM半導体チップ全体を第1の樹脂で包囲
しているので、機械的な衝撃に対しても強く、シかも、
紫外線透過性蓋部材の接着時に中空部がこれらの樹脂に
よって充填されているので、空隙域が小さくなり、蓋部
材の接着時にエポキシ樹脂接着剤の加熱(100〜20
0℃)によって、中空部の圧力が高圧化されることによ
って外部にエポキシ樹脂接着剤が吹き出してしまう蓋部
材の接着不良、すなわち、リークの発生も低減できる利
点がめる。
However, since the entire EPROM semiconductor chip is surrounded by the first resin, it is resistant to mechanical shock and can be easily damaged.
Since the hollow part is filled with these resins when adhering the UV-transparent lid member, the void area becomes small, and the heating of the epoxy resin adhesive (100 to 20
0° C.), it has the advantage of reducing the occurrence of poor adhesion of the lid member, that is, leakage, in which the epoxy resin adhesive is blown out to the outside due to the high pressure in the hollow portion.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の中空プラスチック・タイプ・ノ(ツケー
ジを用いlEPROM装置の断面図、第2図はこの発明
の半導体装置の一実施例の断面図である。 10・・・中空グラスチック・タイプ・)くツケージ、
20・・・EPROMf!置、21・・・アイランド、
22・・・EPROM半導体チップ、23・・・外部導
出リード、24・・・金属細線、25・・・シリコン樹
脂、26・・・外部導出リードとシリコン樹脂の界面、
27・・・紫外線透過性蓋部材、28・・・紫外線透過
性樹脂。
FIG. 1 is a sectional view of an EPROM device using a conventional hollow plastic type cage, and FIG. 2 is a sectional view of an embodiment of the semiconductor device of the present invention. 10... Hollow plastic type・) Kutu cage,
20...EPROMf! Place, 21...Island,
22... EPROM semiconductor chip, 23... External lead-out lead, 24... Metal thin wire, 25... Silicone resin, 26... Interface between external lead-out lead and silicone resin,
27... UV-transparent lid member, 28... UV-transparent resin.

Claims (1)

【特許請求の範囲】[Claims] 中空プラスチック・タイプ・パッケージに搭載されたE
PROM半導体チップと、このEPROM半導体チップ
と外部導出リードとを接続する金属細線と、この金属細
線を含む上記EPROM半導体チップの周辺に充填され
た第1の樹脂と、上記EPROM半導体チップを密封す
る紫外線透過性蓋部材とよりなる半導体装置。
E mounted in a hollow plastic type package
A PROM semiconductor chip, a thin metal wire connecting the EPROM semiconductor chip and an external lead, a first resin filled around the EPROM semiconductor chip including the thin metal wire, and an ultraviolet ray that seals the EPROM semiconductor chip. A semiconductor device comprising a transparent lid member.
JP59171452A 1984-08-20 1984-08-20 Semiconductor device Pending JPS6150352A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59171452A JPS6150352A (en) 1984-08-20 1984-08-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59171452A JPS6150352A (en) 1984-08-20 1984-08-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6150352A true JPS6150352A (en) 1986-03-12

Family

ID=15923362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59171452A Pending JPS6150352A (en) 1984-08-20 1984-08-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6150352A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003046061A (en) * 2001-05-25 2003-02-14 Ibiden Co Ltd Substrate for mounting IC chips
JP2024513524A (en) * 2021-04-12 2024-03-25 ヒタチ・エナジー・リミテッド Power semiconductor module including molded body and method for manufacturing power semiconductor module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003046061A (en) * 2001-05-25 2003-02-14 Ibiden Co Ltd Substrate for mounting IC chips
JP2024513524A (en) * 2021-04-12 2024-03-25 ヒタチ・エナジー・リミテッド Power semiconductor module including molded body and method for manufacturing power semiconductor module

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