JPS6150920B2 - - Google Patents
Info
- Publication number
- JPS6150920B2 JPS6150920B2 JP7668080A JP7668080A JPS6150920B2 JP S6150920 B2 JPS6150920 B2 JP S6150920B2 JP 7668080 A JP7668080 A JP 7668080A JP 7668080 A JP7668080 A JP 7668080A JP S6150920 B2 JPS6150920 B2 JP S6150920B2
- Authority
- JP
- Japan
- Prior art keywords
- copper
- film
- substrate
- copper film
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 56
- 239000010949 copper Substances 0.000 claims description 46
- 229910052802 copper Inorganic materials 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 38
- 238000010438 heat treatment Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 description 15
- 239000011889 copper foil Substances 0.000 description 9
- 238000007747 plating Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000000243 solution Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- BDOYKFSQFYNPKF-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]acetic acid;sodium Chemical compound [Na].[Na].OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O BDOYKFSQFYNPKF-UHFFFAOYSA-N 0.000 description 1
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Landscapes
- Surface Treatment Of Glass (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Description
【発明の詳細な説明】
本発明は無機酸化物基体上に高密着性の銅膜を
形成する方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of forming a highly adhesive copper film on an inorganic oxide substrate.
無機酸化物基板、例えばセラミツク基体上に銅
膜を形成する方法としては、(1)溶液中で基体上に
銅を化学めつきにより形成する、(2)気相中でたと
えば抵抗加熱及び電子ビームによる蒸着又はイオ
ンプレーテイングなどにより、基体上に銅を真空
めつきするなどの方法がある。しかし、これらの
方法により形成された銅膜の密着力は必らずしも
十分とは言えない。 Methods for forming a copper film on an inorganic oxide substrate, such as a ceramic substrate, include (1) forming copper on the substrate in a solution by chemical plating, and (2) forming the copper film on the substrate in a gas phase by, for example, resistive heating and electron beam. There are methods such as vacuum plating copper on a substrate by vapor deposition or ion plating. However, the adhesion of copper films formed by these methods is not necessarily sufficient.
一方、前記方法とは別に大きな電流を流すため
に比較的厚い銅箔を用い、この銅箔をセラミツク
基板上で微量の酸素を含む窒素又はアルゴン中で
1065〜1083℃に加熱することにより、銅箔の表面
にCu2O膜を形成し、これを介してセラミツク基
体に銅箔を密着させ、密着力の強い銅膜を形成す
る方法が提案されている〔J.F.Burgess，C.A.
Neugebauer：The Direct Bonding of Metals
to Ceramics by the Gas‐Metal Eutectic
Methcd：Vol 122，p688（1975）〕。しかしなが
ら、この方法は前記のように高い熱処理温度を必
要とするので、セラミツク基体上に高温に耐えら
れないような他の構成材料が形成又は載置されて
いる場合、この方法を適用することは困難であ
る。更に、この温度に耐えられたとしても、熱処
理温度の範囲が狭いために温度の調整が難かし
く、ましてや大きな形状のものとか、多数のもの
を一度に熱処理しようとする場合などには歩留り
を高くして、高密着性の銅膜を形成することはほ
とんど不可能に近い。すなわち、炉内の温度が局
部的に高く、1083℃を越えると、銅箔が粒状に融
け、膜の形状を維持することが難かしく、一方局
部的に1065℃よりも熱処理温度が低いと、基体の
表面形状に合せて銅箔を熱処理変形させることが
難かしく、十分な密着性を有する銅膜を得ること
が難かしい。更に、銅箔を使用するために複雑な
表面形状を有する基体に適用し得ないという欠点
がある。 On the other hand, in addition to the above method, a relatively thick copper foil is used to pass a large current, and the copper foil is placed on a ceramic substrate in nitrogen or argon containing a trace amount of oxygen.
A method has been proposed in which a Cu 2 O film is formed on the surface of the copper foil by heating it to 1065-1083°C, and the copper foil is adhered to the ceramic substrate through this to form a copper film with strong adhesion. There is [JF Burgess, CA
Neugebauer: The Direct Bonding of Metals
to Ceramics by the Gas‐Metal Eutectic
Methcd: Vol 122, p688 (1975)]. However, since this method requires high heat treatment temperatures as mentioned above, this method cannot be applied when other constituent materials that cannot withstand high temperatures are formed or placed on the ceramic substrate. Have difficulty. Furthermore, even if this temperature can be withstood, the narrow range of heat treatment temperatures makes it difficult to adjust the temperature, and even more so when heat treating large shapes or large numbers of products at once, the yield is high. Therefore, it is almost impossible to form a highly adhesive copper film. In other words, if the temperature inside the furnace is locally high and exceeds 1083°C, the copper foil will melt into particles and it will be difficult to maintain the shape of the film.On the other hand, if the heat treatment temperature is locally lower than 1065°C, It is difficult to heat-treat and deform the copper foil to match the surface shape of the substrate, and it is difficult to obtain a copper film with sufficient adhesion. Furthermore, since copper foil is used, there is a drawback that it cannot be applied to a substrate having a complicated surface shape.
本発明は前記現状に鑑みてなされたもので、そ
の目的は平面のみならず複雑な表面形状を有する
無機酸化物基体に銅膜を形成する方法を提供する
ことである。 The present invention was made in view of the above-mentioned current situation, and its purpose is to provide a method for forming a copper film on an inorganic oxide substrate having not only a flat surface but also a complex surface shape.
前記目的を達成する本発明の無機酸化物基体に
銅膜を形成する方法は無機酸化物基体上に銅膜を
密接して形成し、非還元性雰囲気中で該銅膜の溶
融温度よりも低く、300℃より高い温度で熱処理
することを特徴とする。 The method of forming a copper film on an inorganic oxide substrate according to the present invention to achieve the above object includes forming a copper film closely on the inorganic oxide substrate, and forming the copper film at a temperature lower than the melting temperature of the copper film in a non-reducing atmosphere. , characterized by heat treatment at a temperature higher than 300℃.
本発明における無機酸化物基体としてはセラミ
ツク又はガラス材料で構成される基体が使用さ
れ、この基体の表面状態は平滑である外に複雑な
形状であつてもよい。そしてこの基体面に銅を化
学めつき又はその上にさらには電気めつきし、又
蒸着、スパツタリング、イオンプレテイング、溶
射等の金属膜形成手段により膜状で密接して形成
する。次にこれを0.1〜100ppmの酸素を含む非還
元性雰囲気中で該銅膜の溶融温度より低く、300
℃より高い温度、望ましくは600〜1000℃で熱処
理することにより銅膜は基体に強く密着される。
前記した銅箔を使用する方法においては熱処理に
より銅箔にCu2Oの層が生成され、これが密着力
をもたらすものと考えられるが、本発明において
は基体上に直接銅膜を形成し、しかも低い温度で
熱処理することにより高密着力が得られることは
予測し得ないことである。 As the inorganic oxide substrate in the present invention, a substrate made of ceramic or glass material is used, and the surface condition of this substrate may be smooth or complex. Copper is then chemically plated on the substrate surface or electroplated thereon, and is closely formed in the form of a film by metal film forming means such as vapor deposition, sputtering, ion plating, and thermal spraying. Next, this is heated at 300° C. in a non-reducing atmosphere containing 0.1 to 100 ppm oxygen at a temperature lower than the melting temperature of the copper film.
The copper film is strongly adhered to the substrate by heat treatment at a temperature higher than 600°C, preferably 600 to 1000°C.
In the method using copper foil described above, a layer of Cu 2 O is generated on the copper foil by heat treatment, which is thought to provide adhesion, but in the present invention, a copper film is formed directly on the substrate, and It is unexpected that high adhesion can be obtained by heat treatment at low temperatures.
次に本発明を実施例により説明するが、本発明
はなんらこれに限定されるものではない。 Next, the present invention will be explained by examples, but the present invention is not limited thereto.
各例における膜の密着強度は下記の測定法によ
る。 The adhesion strength of the film in each example was determined by the following measurement method.
膜の密着強度は引張り試験機により評価した。
試験片として用いたセラミツク基板上の銅膜の大
きさは1.5mm角のものであり、第１図に示す引張
り試験用治具５により矢印の方向に治具及びセラ
ミツク基体２上の銅膜１にハンダ３付けしたφ１
mmの銅線４を引張り、セラミツク基体から銅膜が
はく離した時、あるいは引張ることにより、セラ
ミツク基体が破壊した時の引張り荷重の値を求め
た。 The adhesion strength of the film was evaluated using a tensile tester.
The size of the copper film on the ceramic substrate used as a test piece was 1.5 mm square. φ1 with 3 solders attached to
The value of the tensile load was determined when the copper wire 4 of mm was pulled and the copper film was peeled off from the ceramic substrate, or when the ceramic substrate was broken by pulling.
実施例 １
めつき浴により、銅をセラミツク基体上に形成
する場合、まず基体表面への触媒を付与するため
の前処理が必要とされる。前処理工程を以下に示
す。Example 1 When forming copper on a ceramic substrate using a plating bath, a pretreatment is first required to apply a catalyst to the surface of the substrate. The pretreatment process is shown below.
50mm角のセラミツク（Al2O396％、残りSiO2，
MgO，CaO）基体をトリクロルエチレン蒸気と
接触させ、次いで200ｇ／のNaOH水溶液80℃
に５分間浸漬して、基体表面を脱脂し、５分間水
洗した。更に、15％HCl水溶液に１分間室温で浸
漬した後、PdCl2，SnCl2及びHClを含む触媒液
（日立化成製HS101B）に室温で５分間浸漬し、
更に２分間水洗し、銅の無電解めつきのための前
処理工程を終了した。 50mm square ceramic (96% Al 2 O 3 , remaining SiO 2 ,
MgO, CaO) substrate was brought into contact with trichlorethylene vapor, then 200g/NaOH aqueous solution at 80℃
The substrate surface was degreased by immersion in water for 5 minutes, and washed with water for 5 minutes. Furthermore, after immersing it in a 15% HCl aqueous solution for 1 minute at room temperature, it was immersed in a catalyst solution containing PdCl 2 , SnCl 2 and HCl (HS101B manufactured by Hitachi Chemical) for 5 minutes at room temperature.
The sample was further washed with water for 2 minutes to complete the pretreatment process for electroless plating of copper.
化学銅めつき浴としては次の浴組成(A)を用い
た。 The following bath composition (A) was used as a chemical copper plating bath.
浴組成 (A)
CuSO4 0.04mol／
ホルマリン 0.1mol／
エチレンジアミン４酢酸２ナトリウム
0.06mol／
NaOH PH12にする量
２，2′−ジピリジル 0.0002mol／
ポリエチレングリコール
（平均分子量 600） 20ｇ／
水 全体を１にする量
銅の電気めつき浴としては次の浴組成(B)を用い
た。Bath composition (A) CuSO 4 0.04mol/ formalin 0.1mol/ ethylenediaminetetraacetic acid disodium
0.06mol/NaOH Amount to make PH12 2,2'-dipyridyl 0.0002mol/Polyethylene glycol (average molecular weight 600) 20g/Water Amount to make the total 1. Use the following bath composition (B) as a copper electroplating bath. there was.
浴組成 (B)
CuSO4 0.84mol／
H2SO4 0.54mol／
Cl- 0.015mol／
水 全体として１になる量
セラミツク基体を前処理した後、65℃に加温し
た浴組成(A)の無電解めつき浴に浸漬し、空気かく
はんしながら銅を約0.2μｍ程度めつきする。次
にこれを銅の下地電極として、浴組成(B)により、
浴温35℃、カソード電流密度を10mA／cm2で液を
ポンプによりかくはんしながら、銅を10μｍめつ
きする。Bath composition (B) CuSO 4 0.84 mol / H 2 SO 4 0.54 mol / Cl - 0.015 mol / Water Total amount of 1 After pretreating the ceramic substrate, the bath composition (A) was heated to 65°C. It is immersed in an electrolytic plating bath and plated with copper to a thickness of about 0.2 μm while stirring the air. Next, using this as a copper base electrode, depending on the bath composition (B),
While stirring the solution with a pump at a bath temperature of 35°C and a cathode current density of 10 mA/cm 2 , copper is plated to a thickness of 10 μm.
得られた試料を酸素を5ppm含む窒素気流中で
種々の温度条件で熱処理を行なつた。そして熱処
理された試料を塩化第二鉄水溶液により、銅を
1.5mm角にエツチングし、更に銅の表面を２倍に
希釈した硝酸液で軽くエツチングした。次にハン
ダにより銅線と銅めつき膜を接続し、第１図に示
す治具を用い、銅めつき膜の密着力を調べた。密
着力におよぼす熱処理温度の影響を第２図に示
す。第２図より熱処理温度を300℃以上にするこ
とにより、その効果が認められるが、好適な熱処
理温度としては約600〜950℃である。 The obtained samples were heat-treated under various temperature conditions in a nitrogen stream containing 5 ppm of oxygen. Then, the heat-treated sample was treated with a ferric chloride aqueous solution to remove copper.
It was etched into a 1.5 mm square, and the surface of the copper was then lightly etched with a nitric acid solution diluted twice. Next, the copper wire and the copper plating film were connected with solder, and the adhesion of the copper plating film was examined using the jig shown in FIG. Figure 2 shows the influence of heat treatment temperature on adhesion. From FIG. 2, the effect can be seen by setting the heat treatment temperature to 300°C or higher, but the preferred heat treatment temperature is approximately 600 to 950°C.
実施例 ２
銅を抵抗加熱、電子ビームにより、セラミツク
基体上に真空めつきし、膜厚５〜20μｍの銅膜を
形成した。なお真空めつきの条件は下記のとおり
である。蒸発源と基体との距離は50cm、ベルジヤ
ー内の真空圧力は10-6mmHg、基体は蒸発源によ
る直接的なふく射熱以外は特に加熱しなかつた。Example 2 Copper was vacuum plated on a ceramic substrate by resistance heating and an electron beam to form a copper film with a thickness of 5 to 20 μm. The conditions for vacuum plating are as follows. The distance between the evaporation source and the substrate was 50 cm, the vacuum pressure inside the bell gear was 10 -6 mmHg, and the substrate was not particularly heated except for the direct heat radiated from the evaporation source.
次に銅膜を形成したセラミツク基体と酸素を
5ppm含む窒素気流中で、850℃で熱処理した時
のめつき膜の密着力を調べた。熱処理しない場合
には真空めつきにより得られる膜はいずれも100
Kg／cm2以下の密着力であるが、熱処理すると、い
ずれも400〜450Kg／cm2の密着力が得られた。 Next, the ceramic substrate on which the copper film was formed and oxygen were
The adhesion of the plated film was examined when it was heat-treated at 850°C in a nitrogen stream containing 5 ppm. If no heat treatment is used, the film obtained by vacuum plating will be 100%
Although the adhesion strength was less than Kg/cm 2 , when heat-treated, an adhesion strength of 400 to 450 Kg/cm 2 was obtained in all cases.
実施例 ３
実施例２において熱処理温度を600℃とし、窒
素ガス中の酸素濃度を変えた時のめつき銅膜の窒
着力におよぼす雰囲気の影響について調べた。そ
の結果を第３図に示す。第３図より酸素濃度が
0.1ppm以上であれば、密着力が高いめつき膜が
得られることが認められる。Example 3 In Example 2, the heat treatment temperature was set to 600° C., and the influence of the atmosphere on the nitriding strength of the plated copper film was investigated when the oxygen concentration in the nitrogen gas was changed. The results are shown in FIG. From Figure 3, the oxygen concentration
It is recognized that if the content is 0.1 ppm or more, a plated film with high adhesion can be obtained.
なお、空気中で加熱してもめつき膜を十分厚く
しておけば、後で表面の酸化膜をエツチングで取
り除くことができ、膜の密着力は400〜450Kg／cm2
であり、密着力は少しも支障をきたさない。しか
しながら、このような条件で形成した銅膜は密着
力において酸素濃度100ppmの場合と同程度であ
り、又酸化銅の被膜のエツチング除去という余分
の操作を要し、したがつて酸化銅の被膜の厚さが
増加することを避けるためには、酸素濃度を好ま
しくは100ppm以下として熱処理することが望ま
しい。 In addition, if the plating film is made thick enough by heating in air, the oxide film on the surface can be removed by etching later, and the adhesion strength of the film is 400 to 450 kg/cm 2
Therefore, the adhesion strength is not affected in the slightest. However, the adhesion of the copper film formed under these conditions is comparable to that of the case with an oxygen concentration of 100 ppm, and an extra operation of etching away the copper oxide film is required. In order to avoid an increase in thickness, it is desirable to perform heat treatment at an oxygen concentration of preferably 100 ppm or less.
なお、実施例１において使用したAl2O3基体の
代りにZrO2を用いても同様な効果が得られた。 Note that similar effects were obtained even when ZrO 2 was used instead of the Al 2 O 3 substrate used in Example 1.
以上の説明から明らかなように本発明によれば
低い熱処理温度で高密着性銅膜を無機酸化物基体
に設けることができ、しかも表面形状のいかんに
拘らず適用できるという利点がある。 As is clear from the above description, the present invention has the advantage that a highly adhesive copper film can be provided on an inorganic oxide substrate at a low heat treatment temperature, and can be applied regardless of the surface shape.
第１図は銅膜の密着力を測定するための治具の
断面図を示し、第２図は熱処理における密着力と
温度との関係を示すグラフであり、第３図は密着
力と酸素濃度との関係を示すグラフである。
第１図中、１……銅膜、２……セラミツク基
体、３……ハンダ、４……銅線、５……引張り試
験用治具。
Figure 1 shows a cross-sectional view of a jig for measuring the adhesion of copper films, Figure 2 is a graph showing the relationship between adhesion and temperature during heat treatment, and Figure 3 is a graph showing the relationship between adhesion and oxygen concentration. It is a graph showing the relationship between In FIG. 1, 1... copper film, 2... ceramic substrate, 3... solder, 4... copper wire, 5... jig for tensile test.
Claims (1)
0.1〜100ppmの酸素を含む非還元性雰囲気中で該
銅膜の溶融温度よりも低く、300℃よりも高い温
度で熱処理することを特徴とする無機酸化物基体
に銅膜を形成する方法。 ２ 600〜950℃で熱処理する特許請求の範囲第１
項記載の無機酸化物基体に銅膜を形成する方法。[Claims] 1. Forming a copper film closely on an inorganic oxide substrate,
A method for forming a copper film on an inorganic oxide substrate, the method comprising heat-treating the copper film at a temperature lower than the melting temperature of the copper film and higher than 300°C in a non-reducing atmosphere containing 0.1 to 100 ppm oxygen. 2. Claim 1 of heat treatment at 600 to 950°C
A method for forming a copper film on an inorganic oxide substrate as described in 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7668080A JPS572876A (en) | 1980-06-09 | 1980-06-09 | Formation of copper film on inorganic oxide substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7668080A JPS572876A (en) | 1980-06-09 | 1980-06-09 | Formation of copper film on inorganic oxide substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS572876A JPS572876A (en) | 1982-01-08 |
| JPS6150920B2 true JPS6150920B2 (en) | 1986-11-06 |
Family
ID=13612138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7668080A Granted JPS572876A (en) | 1980-06-09 | 1980-06-09 | Formation of copper film on inorganic oxide substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS572876A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0351409U (en) * | 1989-09-26 | 1991-05-20 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS615178A (en) * | 1984-06-15 | 1986-01-10 | 東京マグネツト応用製品株式会社 | Unlocking method and apparatus utilizing magnet |
| JPS6172181A (en) * | 1984-09-14 | 1986-04-14 | 国産金属工業株式会社 | Lock |
-
1980
- 1980-06-09 JP JP7668080A patent/JPS572876A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0351409U (en) * | 1989-09-26 | 1991-05-20 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS572876A (en) | 1982-01-08 |
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