JPS61577A - sputtering equipment - Google Patents
sputtering equipmentInfo
- Publication number
- JPS61577A JPS61577A JP59121355A JP12135584A JPS61577A JP S61577 A JPS61577 A JP S61577A JP 59121355 A JP59121355 A JP 59121355A JP 12135584 A JP12135584 A JP 12135584A JP S61577 A JPS61577 A JP S61577A
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- electrode
- cover
- sputtering apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、スパッタリング装置、特に従来の装置に比べ
て格段に均一な空間的分布を有する薄膜を被付着体上に
形成でき、半導体装置や固体平面表示装置、各種センサ
等の薄膜技術を用いる電子デバイスの製造に有用な装置
に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is capable of forming a thin film on an adherend with a much more uniform spatial distribution than a sputtering apparatus, especially a conventional apparatus, and is suitable for use in semiconductor devices and solid-state flat surfaces. The present invention relates to an apparatus useful for manufacturing electronic devices using thin film technology, such as display devices and various sensors.
従来例の構成とその問題点
従来のスパッタリング装置の一例を第１図に示す。同図
に１はスパッタ室、２はシャッタ、３はシールド板、４
はマグネット、５はターゲット、６はアノード電極（基
板ホルダ）、７は被付着体（基板）、８はターゲット電
極（カンード電極）である。このような従来の構造では
マグネット４によってできる磁界分布のためにスパッタ
放電によるプラズマの空間的分布が第２図に示すように
平面的に不均一な円環状９となる。このプラズマの不均
一分布により被付着体７上の膜形成速度は、平面上の位
置によって異なるので、薄膜を大面積にわたって均一に
形成することは非常に困難である。そのためにターゲッ
ト５が有効に利用できなくなるという欠点を持っていた
。特に、大型薄膜ＥＬ表示装置では、表示面内の輝度む
らが１０パーセント以上になると視覚的に明暗が現われ
見にくくなるので、それを構成している螢光体、絶縁体
等の薄膜の膜厚分布を少なくとも３パーセント以下にし
なければならず、２０パ一セント以上の膜厚分布のある
スパッタリング装置では、歩留０パーセントとなり全く
使いものにならない。Structure of a conventional example and its problems An example of a conventional sputtering apparatus is shown in FIG. In the figure, 1 is a sputtering chamber, 2 is a shutter, 3 is a shield plate, and 4
5 is a magnet, 5 is a target, 6 is an anode electrode (substrate holder), 7 is an adherend (substrate), and 8 is a target electrode (cando electrode). In such a conventional structure, due to the magnetic field distribution created by the magnet 4, the spatial distribution of plasma due to sputter discharge becomes an annular shape 9 that is non-uniform in plan as shown in FIG. Due to the non-uniform distribution of the plasma, the rate of film formation on the adherend 7 varies depending on the position on the plane, so it is very difficult to uniformly form a thin film over a large area. Therefore, it had the disadvantage that target 5 could not be used effectively. In particular, in large thin-film EL display devices, if the luminance unevenness within the display surface exceeds 10%, brightness and darkness will appear visually, making it difficult to see, so the thickness distribution of the thin films such as phosphors and insulators that make up the device must be at least 3% or less, and a sputtering device with a film thickness distribution of 20% or more has a yield of 0% and is completely useless.
発明の目的
本発明は、上記のスパッタリング装置の持つ被付着体上
の薄膜形成速度の空間的不均一性を簡便な方法で除去す
るもので、特に、大面積均一薄膜を形成する必要がある
大型平面表示素子、半導体装置、二次元センサー等の膜
形成に適したスパッタリング装置を提供せんとするもの
である。Purpose of the Invention The present invention is intended to eliminate the spatial non-uniformity of the thin film formation rate on the adherend, which is inherent in the above-mentioned sputtering apparatus, using a simple method. The present invention aims to provide a sputtering apparatus suitable for forming films for flat display elements, semiconductor devices, two-dimensional sensors, and the like.
発明の構成
本発明のスパッタリング装置の基本構成は、互１
″′対向す６″う′西′ｅ−ｉ″Ｊｈ’／’
ｃ ｌ ’ｙ’ ｙ ）電極（カソード電極）と被付
着体の間にアノード電極と同電位の複数個のスパッタ粒
子通過孔を持つターゲット覆いを設けたことを特徴とし
ている。特に本発明にかかるターゲット覆いは、膜形成
速度の空間的不均一性を補正するためにスパッタ粒子の
空間分布に合わせた補正用のスパッタ粒子通過孔を持つ
ことを特徴としている。Structure of the Invention The basic structure of the sputtering apparatus of the present invention is as follows:
''Opposed 6''U'West'e-i''Jh'/'
It is characterized in that a target cover having a plurality of sputtered particle passage holes having the same potential as the anode electrode is provided between the c l 'y' y ) electrode (cathode electrode) and the adherend. In particular, the target cover according to the present invention is characterized by having sputtered particle passage holes for correction in accordance with the spatial distribution of sputtered particles in order to correct spatial non-uniformity in film formation rate.
実施例の説明
本発明のスパッタリング装置の基本構成は、第２図に示
すように互いに対向するよう配設されたターゲット電極
８（カソード電極）と被付着体７の間にアノード電極６
と同電位のターゲ７）覆い１０を設けたことを特徴とし
ている。さらにターゲット覆い１０には、金属線あるい
は金属板あるいはその両方の組み合わせで薄膜形成速度
の不均一性に対応した補正用空隙が設けられている。こ
のターゲット覆いをターゲット表面の一部分あるいは全
体の上部に設ける。従来のシールド板は、ターゲツト材
以外の部分がスパッタされて被付着体上に形成される膜
内に不純物として混入されるのを防ぐことを目的として
いるので、第１図に示すようにターゲット電極の周辺に
設けられている。DESCRIPTION OF EMBODIMENTS The basic structure of the sputtering apparatus of the present invention is that, as shown in FIG.
The target 7) is characterized by being provided with a cover 10 having the same potential as the target 7). Furthermore, the target cover 10 is provided with a correction gap made of a metal wire, a metal plate, or a combination of both to accommodate non-uniformity in the thin film formation rate. The target cover is provided over a portion or the entire target surface. The purpose of conventional shield plates is to prevent parts other than the target material from being mixed as impurities into the sputtered film formed on the adherend, so as shown in Figure 1, the target electrode are located around the area.
これに対して本発明にかかるスパッタリング装置に配設
されたターゲット覆い１ｏは、膜形成速度の空間的不均
一性を補正することを目的としている。このターゲット
覆い１ｏの構造は、膜形成速度の不均一性に応じて決定
されるが、その二、三の例を第４図に示す。第４図（ロ
）は、金属板１１上に任意の形状の穴１２からできてお
り、（イ）は金属線１３が網状に金属わく１４に構成さ
れ、（つ）は金属板１６をわく組みとして櫛状１６に構
成されている。On the other hand, the target cover 1o provided in the sputtering apparatus according to the present invention is intended to correct the spatial non-uniformity of the film formation rate. The structure of the target cover 1o is determined depending on the non-uniformity of the film formation rate, and FIG. 4 shows two or three examples thereof. FIG. 4(B) shows holes 12 of arbitrary shapes formed on a metal plate 11, FIG. The set is configured in a comb shape 16.
以上の実施例において、通常のスパッタ蒸着、例えばス
パッタガス圧が１０−３がら１Ｏ−２Ｔｏｒｒの範囲内
のときターゲット覆いとターゲットの間隔に最適値が０
．３からＩ Ｃｍの範囲にあることを本出願人らは見付
けた。すなわちターゲット覆いの距離を長くしていくと
、ターゲット覆いの効果を得ようとすると、例えば網状
の覆いの密度を高める必要があり、その結果、基板での
蒸着速度が第５図の如く急速に低下し、例えばＩ Ｃｍ
以上では２０チ以上蒸着速度が減り、実用性に欠く。ま
た逆に距離を近づけすぎてｏ、３ｃｆｎ以下にするとス
パッタ放電が不安定になるので安定なスパッタ蒸着が得
られないことを本出願人らは確認した。なお、一般にこ
の種のターゲット覆いを設けるとスパッタ放電が不安定
になるとともに、不純物の混入などがあるため、従来の
考え方ではあまり効果的でないと考えられていた。しか
し本出願人らは、％にマグネトロン型のスパッタ装置で
は、これらの危惧が全くないことを確認した。その理由
のひとつとして、例えばマグネトロン型では、ターゲッ
トからの２次電子がターゲット表面の磁界に捕獲され、
ターゲット覆いに入射しないことがあげられるＱ
第６図及び第７図は、従来のマグネトロンスパッタリン
グ装置で薄膜を形成した場合の膜厚分布と本発明にかか
るスパッタリング装置でターゲット覆いとして第４図（
つ）に示すターゲット覆い１゜を用いて薄膜を形成した
場合の膜厚分布を各々示している。ターゲット覆いを構
成する素材としてハ、チタン、タンタル、ニオブ、クロ
ム、二ノヶル、タングステン、白金、金、鉄、ロジウム
、モリブテン、ジルコン、コバル）、Ｍ、銀、ニッケル
ークロム合金、白金−ロジウム合金、あるいはこれらの
複合物がある。特に、付着物として、マンガンを含む硫
化亜鉛ＺｎＯ，Ｓｎ○２ ＋ Ｉ ｎ ２０３をスパッ
タする場合には、アルゴン雰囲気で行なうため前記した
金属すべてがターゲット覆いの素材として用いられるこ
とを確認した。また、ターゲットとしてペロブスカイト
形酸化物、タングステンブロンズ形酸化物Ｓ ｒ Ｔ
１０ Ｐ ｂ Ｎ ｂ ２０ ｅ 。In the above embodiments, in normal sputter deposition, for example, when the sputtering gas pressure is in the range of 10-3 to 10-2 Torr, the optimum value for the distance between the target cover and the target is 0.
．． Applicants have found that it ranges from 3 to I Cm. In other words, as the distance of the target covering increases, in order to obtain the target covering effect, it is necessary to increase the density of the net-like covering, for example, and as a result, the deposition rate on the substrate rapidly increases as shown in Figure 5. For example, I Cm
In the above case, the deposition rate decreases by more than 20 inches, which is impractical. On the other hand, the applicants have confirmed that if the distance is too close to less than 3 cfn, the sputter discharge becomes unstable and stable sputter deposition cannot be obtained. Note that, in general, providing this type of target cover makes sputtering discharge unstable and also causes impurities to be mixed in, so it has been thought that it is not very effective based on conventional thinking. However, the applicants have confirmed that these concerns do not arise at all with magnetron type sputtering equipment. One of the reasons for this is that, for example, in the magnetron type, secondary electrons from the target are captured by the magnetic field on the target surface.
Q. Figures 6 and 7 show the film thickness distribution when a thin film is formed using a conventional magnetron sputtering device, and Figure 4 (
The film thickness distribution when a thin film is formed using the target cover of 1° shown in (2) is shown. Materials that make up the target cover include: C, titanium, tantalum, niobium, chromium, Ninocal, tungsten, platinum, gold, iron, rhodium, molybdenum, zircon, cobal), M, silver, nickel-chromium alloy, platinum-rhodium alloy. , or a combination of these. In particular, when sputtering zinc sulfide ZnO, Sn○2 + In 203 containing manganese as a deposit, it was confirmed that all of the metals mentioned above can be used as materials for the target cover since the sputtering is carried out in an argon atmosphere. In addition, perovskite oxide and tungsten bronze oxide S r T are used as targets.
10 P b N b 20 e.
ｌ
５ｒ（Ｔｉ、Ｈｆ）０３を用いる場合には、酸素雰囲気
中で蒸着するため、チタン、タンタル、ニオブ。When using l5r(Ti, Hf)03, titanium, tantalum, and niobium are deposited in an oxygen atmosphere.
白金、金、ニッケル、クロム、ニッケルークロム合金が
ターゲット覆いの素材として適していた。Platinum, gold, nickel, chromium, and nickel-chromium alloys were suitable materials for the target cover.
第６図と第７図を比較すると第７図に示した膜厚分布は
、従来例第６図の分布よりはるかに被付着体上の膜厚均
一性が良いことがわかる。本発明のイ ス
パッタリング装置では、膜厚分布は、ターゲット５の面
積３８ｃｍ×１２ｃｍに対して被付着体７の面積３０
ｃｍ Ｘ ８ ｃｍの範囲で膜厚分布を膜厚測定器の測
定精度（±１％）以下におさえることができた。例えば
、Ａｒとｏ２ が１：１のガス圧１．５×１０Ｔｏｒｒ
中でスパッタするときターゲット覆い９の位置は、
ターゲット電極の表面より７咽程度離し、アノード電極
と電位を同じにすると、ターゲット電極に平行な平面内
において膜形成速度が制御できることが確認された。タ
ーゲット覆い９がアノード電極６と同電位であるために
ターゲット５の上にターゲット覆いを設けても、ターゲ
ット覆いを構成する金属物質が被付着体へ飛来すること
を防止でき、言い換れば付着物内への不純物の混入がほ
とんどないという利点を持っていることが確認された。Comparing FIG. 6 and FIG. 7, it can be seen that the film thickness distribution shown in FIG. 7 has a much better uniformity of film thickness on the adherend than the conventional distribution shown in FIG. 6. In the sputtering apparatus of the present invention, the film thickness distribution is such that the target 5 has an area of 38 cm x 12 cm and the adherend 7 has an area of 30 cm.
The film thickness distribution could be kept within the measurement accuracy (±1%) of the film thickness measuring device within the range of cm x 8 cm. For example, Ar and O2 are 1:1 and the gas pressure is 1.5 x 10 Torr.
The position of the target cover 9 when sputtering inside is
It was confirmed that the film formation rate could be controlled in a plane parallel to the target electrode by placing it about 7 feet away from the surface of the target electrode and making the potential the same as that of the anode electrode. Since the target cover 9 has the same potential as the anode electrode 6, even if the target cover is provided over the target 5, the metal substance forming the target cover can be prevented from flying to the adherend. It has been confirmed that the kimono has the advantage that almost no impurities are mixed into the kimono.
発明の詳細
な説明したように本発明のスパッタリング装置は、被付
着体に形成される薄膜の厚みを広範囲に渡り均一化でき
、ターゲツト面を有効に利用できるため、大面積を必要
とする薄膜を利用した固体表示素子、半導体装置、各種
センサー等の電子デバイス作製の際に二次元大型化にお
いて飛躍的な進歩につながる用途がある。従って、本発
明によれば、薄膜形成技術におけるスノく・７タリング
装置としてのエレクトロニクス分野での用途に適したも
のである。DETAILED DESCRIPTION OF THE INVENTION As described in detail, the sputtering apparatus of the present invention can uniformize the thickness of the thin film formed on the adherend over a wide range and make effective use of the target surface, making it possible to produce thin films that require a large area. There are applications that will lead to dramatic advances in two-dimensional scaling in the production of electronic devices such as solid-state display elements, semiconductor devices, and various sensors. Therefore, the present invention is suitable for use in the electronics field as a slatting device in thin film forming technology.
第１図は従来のスパッタリング装置（プレーナマグネト
ロンスパッタリング装置）のスノ々ツタ室の概要を示す
断面図、第２図はプラズマの空間的分布を示す平面図、
第３図は本発明のスパッタリング装置のスパッタ室の概
要を示す断面図、第４図（７）、（イ）、（つ）は本発
明のスパッタリング装置のターゲット覆いの実施例概略
図、第５図は蒸着速度とタルゲット表面とターゲット覆
いの間隔の関係を示した図、第６図は従来のスパッタリ
ング装置で薄膜を形成したときの被付着体（基板）上の
一方向の膜厚分布図、第７図は本発明のスパッタリング
装置で薄膜を形成した場合の被付着体（基板）上の一方
向の膜厚分布図である。
１・・・・・スパッタ室、２・・・・・・シャッタ、３
・・・・・・シールド板、４・・・・・・マグネット、
６・・・・・ターゲット、６・・・・・・アノード電極
（基板ホルダ）、７・・・・・・被付着体（基板）、８
・・・・・・ターゲット電極（カソード電極）、１０・
・・・・ターゲット覆い。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第４
図
図
嗅
ターゲ：ノ罎油とターゲ・ン）糧？１との聞１１％ ｃ
ｃや）図
図FIG. 1 is a cross-sectional view showing an outline of the snot-like chamber of a conventional sputtering device (planar magnetron sputtering device), and FIG. 2 is a plan view showing the spatial distribution of plasma.
FIG. 3 is a sectional view showing an outline of the sputtering chamber of the sputtering apparatus of the present invention, FIGS. The figure shows the relationship between the evaporation rate and the distance between the target surface and the target cover, and Figure 6 shows the film thickness distribution in one direction on the adherend (substrate) when a thin film is formed using a conventional sputtering device. FIG. 7 is a unidirectional film thickness distribution diagram on an adherend (substrate) when a thin film is formed using the sputtering apparatus of the present invention. 1...Sputtering chamber, 2...Shutter, 3
・・・・・・Shield plate, 4・・・・・・Magnet,
6... Target, 6... Anode electrode (substrate holder), 7... Adherent (substrate), 8
...Target electrode (cathode electrode), 10.
...Target cover. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 4
Diagram of olfactory target: Noko oil and target) Food? 11% c
c) Diagram
Claims (3)
付着体の間にアノード電極と同電位の大きさの異なる複
数個のスパッタ粒子通過孔を持つターゲット覆いを設け
たことを特徴とするスパッタリング装置。(1) Sputtering characterized by providing a target cover having a plurality of sputtered particle passage holes having the same potential and different sizes as the anode electrode between the target and the adherend which are arranged to face each other. Device.
両者を組み合わせて形成されており、かつターゲット電
極表面の一部分あるいは全体に設けたことを特徴とする
特許請求の範囲第１項記載のスパッタリング装置。(2) The sputtering apparatus according to claim 1, wherein the target cover is formed of a metal wire, a metal plate, or a combination of both, and is provided on a part or the entire surface of the target electrode.
ト覆いが前記ターゲット電極の上部で０．３から１ｃｍ
の範囲内で配設されたことを特徴とする特許請求の範囲
第１項又は第２項記載のスパッタリング装置。(3) A magnetic field is provided on the surface of the target electrode, and the target cover is 0.3 to 1 cm above the target electrode.
The sputtering apparatus according to claim 1 or 2, characterized in that the sputtering apparatus is arranged within the range of .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59121355A JPS61577A (en) | 1984-06-13 | 1984-06-13 | sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59121355A JPS61577A (en) | 1984-06-13 | 1984-06-13 | sputtering equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61577A true JPS61577A (en) | 1986-01-06 |
Family
ID=14809221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59121355A Pending JPS61577A (en) | 1984-06-13 | 1984-06-13 | sputtering equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61577A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5415753A (en) * | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
| US5505833A (en) * | 1993-07-26 | 1996-04-09 | Siemens Aktiengesellschaft Ag | Method for depositing a layer on a substrate wafer with a sputtering process |
| US5536381A (en) * | 1994-06-29 | 1996-07-16 | Samsung Electronics Co., Ltd. | Sputtering device |
| US6837967B1 (en) * | 2002-11-06 | 2005-01-04 | Lsi Logic Corporation | Method and apparatus for cleaning deposited films from the edge of a wafer |
| KR100504477B1 (en) * | 2002-11-05 | 2005-08-03 | 엘지전자 주식회사 | Heating source apparatus for Organic electron luminescence |
| US7575638B2 (en) | 2007-02-02 | 2009-08-18 | Lam Research Corporation | Apparatus for defining regions of process exclusion and process performance in a process chamber |
| JP2009532589A (en) * | 2006-04-06 | 2009-09-10 | アプライド マテリアルズ インコーポレイテッド | Reactive sputtering of zinc oxide transparent conductive oxide on large area substrates |
| US7662254B2 (en) | 2007-02-08 | 2010-02-16 | Lam Research Corporation | Methods of and apparatus for aligning electrodes in a process chamber to protect an exclusion area within an edge environ of a wafer |
-
1984
- 1984-06-13 JP JP59121355A patent/JPS61577A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5415753A (en) * | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
| US5505833A (en) * | 1993-07-26 | 1996-04-09 | Siemens Aktiengesellschaft Ag | Method for depositing a layer on a substrate wafer with a sputtering process |
| US5536381A (en) * | 1994-06-29 | 1996-07-16 | Samsung Electronics Co., Ltd. | Sputtering device |
| KR100504477B1 (en) * | 2002-11-05 | 2005-08-03 | 엘지전자 주식회사 | Heating source apparatus for Organic electron luminescence |
| US6837967B1 (en) * | 2002-11-06 | 2005-01-04 | Lsi Logic Corporation | Method and apparatus for cleaning deposited films from the edge of a wafer |
| JP2009532589A (en) * | 2006-04-06 | 2009-09-10 | アプライド マテリアルズ インコーポレイテッド | Reactive sputtering of zinc oxide transparent conductive oxide on large area substrates |
| US7575638B2 (en) | 2007-02-02 | 2009-08-18 | Lam Research Corporation | Apparatus for defining regions of process exclusion and process performance in a process chamber |
| US7662254B2 (en) | 2007-02-08 | 2010-02-16 | Lam Research Corporation | Methods of and apparatus for aligning electrodes in a process chamber to protect an exclusion area within an edge environ of a wafer |
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