JPS6161264B2 - - Google Patents
Info
- Publication number
- JPS6161264B2 JPS6161264B2 JP54025312A JP2531279A JPS6161264B2 JP S6161264 B2 JPS6161264 B2 JP S6161264B2 JP 54025312 A JP54025312 A JP 54025312A JP 2531279 A JP2531279 A JP 2531279A JP S6161264 B2 JPS6161264 B2 JP S6161264B2
- Authority
- JP
- Japan
- Prior art keywords
- molybdenum
- silicide
- semiconductor device
- metals
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2531279A JPS55118648A (en) | 1979-03-05 | 1979-03-05 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2531279A JPS55118648A (en) | 1979-03-05 | 1979-03-05 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55118648A JPS55118648A (en) | 1980-09-11 |
| JPS6161264B2 true JPS6161264B2 (fr) | 1986-12-24 |
Family
ID=12162477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2531279A Granted JPS55118648A (en) | 1979-03-05 | 1979-03-05 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55118648A (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2549340B2 (ja) * | 1993-02-01 | 1996-10-30 | スライデックス株式会社 | ファイルシート収納装置 |
-
1979
- 1979-03-05 JP JP2531279A patent/JPS55118648A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55118648A (en) | 1980-09-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4180596A (en) | Method for providing a metal silicide layer on a substrate | |
| EP0159935B1 (fr) | Procédé inhibitant l'exo-diffusion de dopants | |
| JPS59217328A (ja) | 集積回路装置の製造方法 | |
| JPS5863174A (ja) | 導電性構造体の形成方法 | |
| WO2002056340A2 (fr) | Dispositif a semiconducteur | |
| JPS6318342B2 (fr) | ||
| US20020098669A1 (en) | Gate electrode having agglomeration prevention layer on metal silicide layer, and method for forming the same | |
| US5624871A (en) | Method for making electrical local interconnects | |
| JPS6161264B2 (fr) | ||
| JP3540613B2 (ja) | 半導体装置 | |
| JPS584975A (ja) | 半導体装置の製造方法 | |
| JP2930102B2 (ja) | 半導体装置用配線構造及びその製造方法 | |
| EP0100454B1 (fr) | Dispositif semi-conducteur avec une couche conductrice composé d'un siliciure de métal à point de fusion élevé et procédé de fabrication d'un tel dispositif à semi-conducteur | |
| JPS61242039A (ja) | 半導体装置 | |
| Kwong | Rapid thermal annealing of co-sputtered tantalum silicide films | |
| JPH05267300A (ja) | 半導体装置 | |
| JP2991121B2 (ja) | 半導体装置およびその製造方法 | |
| JP3085745B2 (ja) | 半導体装置の製造方法 | |
| TWI239623B (en) | Electrically conductive structure layer and the formation method for reducing the metal etching residue | |
| JP2645811B2 (ja) | 拡散バリヤ機能を有する半導体素子の電極形成方法 | |
| JPH0578181B2 (fr) | ||
| JPS59168666A (ja) | 半導体装置 | |
| JP2773937B2 (ja) | 半導体装置の製造方法 | |
| JP2705193B2 (ja) | 半導体装置の製法 | |
| JP2764934B2 (ja) | 半導体装置 |