JPS6161269B2 - - Google Patents
Info
- Publication number
- JPS6161269B2 JPS6161269B2 JP54042171A JP4217179A JPS6161269B2 JP S6161269 B2 JPS6161269 B2 JP S6161269B2 JP 54042171 A JP54042171 A JP 54042171A JP 4217179 A JP4217179 A JP 4217179A JP S6161269 B2 JPS6161269 B2 JP S6161269B2
- Authority
- JP
- Japan
- Prior art keywords
- tin oxide
- oxide film
- layer
- thickness
- gold layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本発明は酸化錫膜に対するオーミツク電極構造
に関する。
この種オーミツク電極としては、酸化錫膜に対
する接着力が強く、又オーミツク電極へのワイヤ
ボンデイング固着強度の大なるものが望ましい。
本発明は上記点に鑑みてなされたもので、以下
本発明を太陽電池に適用した実施例において説明
する。
図は実施例を示し、１はＮ型、比抵抗10Ωcmの
単結晶シリコン基板、２は該基板上に被着された
酸化錫膜である。該酸化錫膜はCVD法により形
成され、膜厚2550Åを有し、透光性であると共
に、基板１と共にヘテロ接合を形成し、斯る接合
は、酸化錫膜２を通して基板１へ光入射があつた
場合、光起電力発生に寄与する。
３は酸化錫膜２に対するオーミツク電極であり
酸化錫膜２上に被着されたクロム層４と、該層上
に被着された金層５とからなる。クロム層４や金
層５は基板１を約150℃に保つた状態で真空蒸着
により形成され、夫々の膜厚は前者が300Å後者
が5000Åの大きさにおいて、酸化錫膜２―クロム
層４―金層５間の接着力と、金層５へのワイヤボ
ンデイング接着力の各強度が最も好ましいものと
なつた。
第１表に上記金層５の膜厚を5000Åとなしクロ
ム層４の膜厚を変化させた場合、金層５へのアル
ミニウム線の超音波ボンデイングによる固着力及
び酸化錫膜２に対する接着力の各試験結果を示
す。
The present invention relates to an ohmic electrode structure for a tin oxide film. It is desirable that this type of ohmic electrode has a strong adhesion to the tin oxide film and a high bonding strength for wire bonding to the ohmic electrode. The present invention has been made in view of the above points, and will be described below with reference to examples in which the present invention is applied to solar cells. The figure shows an example, where 1 is an N-type single crystal silicon substrate with a specific resistance of 10 Ωcm, and 2 is a tin oxide film deposited on the substrate. The tin oxide film is formed by the CVD method, has a film thickness of 2550 Å, is transparent, and forms a heterojunction with the substrate 1. Such a junction allows light to enter the substrate 1 through the tin oxide film 2. When heated, it contributes to the generation of photovoltaic power. Reference numeral 3 denotes an ohmic electrode for the tin oxide film 2, which consists of a chromium layer 4 deposited on the tin oxide film 2 and a gold layer 5 deposited thereon. The chromium layer 4 and the gold layer 5 are formed by vacuum evaporation while keeping the substrate 1 at about 150°C, and the thickness of each film is 300 Å for the former and 5000 Å for the latter. The adhesive strength between the gold layers 5 and the wire bonding strength to the gold layer 5 were the most preferable. Table 1 shows the adhesion strength of the aluminum wire to the gold layer 5 by ultrasonic bonding and the adhesion strength to the tin oxide film 2 when the thickness of the gold layer 5 is 5000 Å and the thickness of the chromium layer 4 is varied. The results of each test are shown.
【表】
第２表に、上記クロム層４の膜厚を300Åとな
し、金層５の膜厚を変化させた場合、同様に金層
５へのアルミニウム線の超音波ボンデングによる
固着力及びクロム層４と金層５との接着力の各試
験結果を示す。[Table] Table 2 shows the adhesion force of the aluminum wire to the gold layer 5 by ultrasonic bonding and the chromium The results of each test of the adhesive strength between layer 4 and gold layer 5 are shown.
【表】
上記各表より、クロム層４及び金層５の夫々の
膜厚は、100〜600Å及び2000〜10000Åの範囲で
好ましい結果をもたらすことが判る。
以上の説明より明らかな如く、本発明によれば
酸化錫膜に対する接着力が強く、又ワイヤボンデ
イング固着強度も大なるオーミツク電極が得られ
る。[Table] From the above tables, it can be seen that preferable results are obtained when the thicknesses of the chromium layer 4 and the gold layer 5 range from 100 to 600 Å and from 2000 to 10000 Å, respectively. As is clear from the above description, according to the present invention, an ohmic electrode can be obtained which has strong adhesion to the tin oxide film and also has high wire bonding strength.
図は本発明実施例の側面図を示し、２は酸化錫
膜、４はクロム層、５は金層である。
The figure shows a side view of an embodiment of the present invention, in which 2 is a tin oxide film, 4 is a chromium layer, and 5 is a gold layer.
Claims (1)
て、該構造は上記酸化錫膜上に被着された膜厚
100〜600Åのクロム層と、該クロム層上に被着さ
れた膜厚2000〜10000Åの金層とからなることを
特徴とするオーミツク電極構造。1. In an ohmic electrode structure for a tin oxide film, the structure is based on the thickness of the film deposited on the tin oxide film.
An ohmic electrode structure comprising a chromium layer with a thickness of 100 to 600 Å and a gold layer with a thickness of 2000 to 10,000 Å deposited on the chromium layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4217179A JPS55134984A (en) | 1979-04-06 | 1979-04-06 | Ohmic electrode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4217179A JPS55134984A (en) | 1979-04-06 | 1979-04-06 | Ohmic electrode structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55134984A JPS55134984A (en) | 1980-10-21 |
| JPS6161269B2 true JPS6161269B2 (en) | 1986-12-24 |
Family
ID=12628514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4217179A Granted JPS55134984A (en) | 1979-04-06 | 1979-04-06 | Ohmic electrode structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55134984A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0260171A (en) * | 1988-08-26 | 1990-02-28 | Mitsubishi Electric Corp | Solar cell |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3753624A (en) * | 1971-08-20 | 1973-08-21 | Valeron Corp | Boring tool for small diameters |
-
1979
- 1979-04-06 JP JP4217179A patent/JPS55134984A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55134984A (en) | 1980-10-21 |
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