JPS6162367A - 多重電極半導体電力装置をドライブするための電源 - Google Patents
多重電極半導体電力装置をドライブするための電源Info
- Publication number
- JPS6162367A JPS6162367A JP60184994A JP18499485A JPS6162367A JP S6162367 A JPS6162367 A JP S6162367A JP 60184994 A JP60184994 A JP 60184994A JP 18499485 A JP18499485 A JP 18499485A JP S6162367 A JPS6162367 A JP S6162367A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- transistor
- capacitor
- drive circuit
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
- Dc-Dc Converters (AREA)
- Inverter Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US64524084A | 1984-08-29 | 1984-08-29 | |
| US645240 | 1984-08-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6162367A true JPS6162367A (ja) | 1986-03-31 |
Family
ID=24588223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60184994A Pending JPS6162367A (ja) | 1984-08-29 | 1985-08-22 | 多重電極半導体電力装置をドライブするための電源 |
Country Status (2)
| Country | Link |
|---|---|
| EP (1) | EP0177148A3 (de) |
| JP (1) | JPS6162367A (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0472889U (de) * | 1990-10-31 | 1992-06-26 | ||
| JP2007143380A (ja) * | 2005-11-17 | 2007-06-07 | Samsung Electronics Co Ltd | インバータ回路 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2605161B1 (fr) * | 1986-10-08 | 1991-09-13 | Aerospatiale | Commutateur electronique a faible chute de tension |
| US4758941A (en) * | 1987-10-30 | 1988-07-19 | International Business Machines Corporation | MOSFET fullbridge switching regulator having transformer coupled MOSFET drive circuit |
| IT1240906B (it) * | 1990-03-19 | 1993-12-20 | Seit Elettronica Srl | Circuito di pilotaggio velocissimo per mosfet |
| DE102011088169A1 (de) * | 2011-12-09 | 2013-06-13 | Robert Bosch Gmbh | Spannungswandler für ein Kraftfahrzeug |
| GB2559423B8 (en) * | 2017-02-07 | 2023-06-28 | Heyday Integrated Circuits Sas | An isolated high side drive circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS457224Y1 (de) * | 1965-11-12 | 1970-04-08 | ||
| JPS5780274A (en) * | 1980-11-05 | 1982-05-19 | Hitachi Ltd | Control circuit for field-effect transistor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4423341A (en) * | 1981-01-02 | 1983-12-27 | Sperry Corporation | Fast switching field effect transistor driver circuit |
| AT377138B (de) * | 1981-11-26 | 1985-02-11 | Zumtobel Ag | Schaltungsanordnung fuer eine potentialgetrennte ansteuerung wenigstens eines feldeffekttransistors |
-
1985
- 1985-08-16 EP EP85305833A patent/EP0177148A3/de not_active Withdrawn
- 1985-08-22 JP JP60184994A patent/JPS6162367A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS457224Y1 (de) * | 1965-11-12 | 1970-04-08 | ||
| JPS5780274A (en) * | 1980-11-05 | 1982-05-19 | Hitachi Ltd | Control circuit for field-effect transistor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0472889U (de) * | 1990-10-31 | 1992-06-26 | ||
| JP2007143380A (ja) * | 2005-11-17 | 2007-06-07 | Samsung Electronics Co Ltd | インバータ回路 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0177148A3 (de) | 1987-06-03 |
| EP0177148A2 (de) | 1986-04-09 |
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