JPS616271A - Method and device for bias ion plating - Google Patents

Abstract

PURPOSE:To prevent the surface of a substrate for vapor deposition from being flawed by electric discharge in the stage of depositing a film by ion plating to the substrate on which a bias voltage is impressed negative in a vacuum vessel by irraidating electron rays to said surface to neutralize the accumulated positive charge. CONSTITUTION:The substrate 17 is attached to a substrate holder 15 in a vacuum vessel 11 and plasma is generated in a vapor source 13 by the high-frequency discharge generated from a high-frequency oscillation coil 19 to ionize partly the evaportaing material from the source 13. The negative bias voltage is kept impressed to the holder 15 by a DC power source 35 in this stage to accelerate the ionized vapor in such a manner that the vapor collides against the substrate surface 17a thus forming the film deposited by evaporation. The positive charge accumulates on the surface 17a until the charge is discharged to make discharge traces on the surface for vapor deposition thereby deteriorating the quality of said surface, if the evaporating material is the insulating material such as SiO2 in this care. Thermion is therefore irradiated to the surface 17a to neutralize the accumulated positive charge, by which the generation of the discharge is prevented and the deterioration in the quality of the surface for vapor deposition by the discharge traces is prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a bias ion plating method and apparatus for ionizing at least a portion of an evaporated substance and accelerating it by an electric field for vapor deposition.

Bias ion plating is a method in which a portion of the evaporated material is ionized by plasma, and the ions are accelerated by an electric field for vapor deposition.

This method has excellent properties such as being able to obtain a film with high adhesion strength even at relatively low temperatures, providing a film with high crystallization, and being easy to perform reactive vapor deposition.
It is also possible to control film properties such as crystallinity by controlling the bias voltage.

However, when this method is applied to the formation of an insulating film such as Sin, positive charges accumulate on the substrate deposition surface, jig, or holder, and eventually discharge. It forms discharge marks and deteriorates the quality of the deposited film.

As a method for preventing this charge accumulation, it has been proposed to provide a net biased to approximately the same potential as the substrate near the front surface of the substrate. However, this method is not only still insufficiently effective, but also has a large risk of adversely affecting the deposition surface, such as the generation of pinholes.

■Nobutane (Solution) The bias ion plating method of the present invention applies a negative bias voltage to the substrate and when forming a film on the substrate by ion plating, the positive charges accumulated on the evaporation surface are effectively removed. It is characterized by irradiating the evaporation surface with an amount of electron beam sufficient to neutralize the evaporation surface.

Further, the bias ion plating apparatus of the present invention includes (a) a vacuum chamber, (b) a substrate holder disposed in the vacuum chamber and to which a bias voltage is applied, (c) an evaporation source provided in the vacuum chamber, and (d) A bias ion plating apparatus comprising: ionization means for ionizing at least a portion of evaporated material from the evaporation source, further comprising: (e) a neutral plating device for irradiating an electron beam onto a deposition surface supported by the substrate holder; It is characterized by having a riser.

Ministry-Sato A negative bias voltage applied to the substrate creates an electric field.

The evaporated material from the evaporation source is partially ionized, and the ionized particles are accelerated by the electric field and deposited onto the substrate. At this time, if the deposition material is an insulator or the like and the charge cannot be dissipated from the surface of the substrate, jig, etc., positive charges from the ionized particles will accumulate on the deposition surface. The electron beam neutralizes this positive charge. The electron beam irradiation is carried out to the extent that the positive charges accumulated on the deposition surface are substantially neutralized.

Here, "substantially neutralizing" refers to eliminating positive charges to an extent that can prevent the adverse effects of charge accumulation. Therefore, it is completely different from a small amount of electrons that fly to the substrate from an electron gun as an evaporation source, and an electron beam that is accelerated and focused for the purpose of electron impact, such as that supplied by an electron gun as an evaporation source into a crucible. Of course they are different. In the present invention, the electron beam is irradiated within a range that does not damage the deposited material, or the substrate or the substrate holder, such as melting, and a neutralizer capable of such irradiation is used.

1 example FIG. 1 is a block diagram showing an embodiment of the present invention.

Inside the vacuum chamber 11 are an evaporation source 13 and a substrate holder 15.
A substrate 17 to be deposited is supported on the substrate holder 15. This substrate 17 can be supplied into the vacuum chamber 11 in a batch manner or can be supplied continuously.

There is a high frequency transmitting coil (RF coil) 1 near the evaporation source.
9 is provided. Plasma is formed by high frequency discharge by the RF coil, and the evaporated material from the evaporation source 13 is partially ionized.

A negative DC voltage is applied to the substrate holder 15,
The ionized evaporated material is accelerated by the electric field formed thereby and is deposited on the substrate deposition surface 17a. Usually -1
A bias voltage of about 00V to -2KV is applied.

The neutralizer 21 is an electron supply source, and electrons emitted from the hot filament are accelerated by the acceleration voltage of the neutralizer and irradiated onto the substrate deposition surface 17a. This accelerating voltage is set to be about 300 V or more higher than the substrate bias voltage. For example, when the substrate bias is -500V, the acceleration voltage is set to -800V or more because the electron beam is accelerated at a positive potential. The amount of electron irradiation is sufficient to substantially neutralize the electrical charge on the deposition surface, and within a range that does not damage the deposited film, the holder, etc.

When performing reactive ion plating, a reactive gas such as oxygen is introduced from the gas introduction valve 23.

In the figure, 31 is an evaporation source power supply, 33 is a high frequency power supply, 35 is a DC bias power supply, 37 is a neutralizer power supply, and 39
is the exhaust system.

According to the present invention, by performing bias ion plating while irradiating with an electron beam, vapor deposition can be performed while preventing the vapor deposition surface from being charged by charged particles. Therefore, even if the deposition surface is electrically charged, such as when depositing an insulator, it is possible to form a film by bias ion plating while effectively preventing negative effects such as the generation of discharge marks due to this electrical charging. can.

[Brief explanation of drawings]

FIG. 1 is a drawing for explaining the present invention in detail. 11... Vacuum tank 13... Evaporation
Source 15...Substrate holder 17...Group
Plate 178...Substrate vapor deposition surface 19...RF coil 21
...Neutralizer-7 Funeral 1m

Claims (1)

[Claims] 1. When applying a negative bias voltage to the substrate and forming a film on the substrate by ion plating, an amount of electrons sufficient to substantially neutralize the positive charges accumulated on the deposition surface. A bias ion plating method characterized by irradiating a vapor deposition surface with a beam. 2. (a) a vacuum chamber; (b) a substrate holder disposed in the vacuum chamber and to which a bias voltage is applied; (c) an evaporation source provided in the vacuum chamber; and (d) at least one of the evaporated substances from the evaporation source. A bias ion plating apparatus further comprising: (e) a neutralizer for irradiating an electron beam onto a deposition surface supported by the substrate holder; Plating equipment.