JPS6373354U - - Google Patents
Info
- Publication number
- JPS6373354U JPS6373354U JP16850486U JP16850486U JPS6373354U JP S6373354 U JPS6373354 U JP S6373354U JP 16850486 U JP16850486 U JP 16850486U JP 16850486 U JP16850486 U JP 16850486U JP S6373354 U JPS6373354 U JP S6373354U
- Authority
- JP
- Japan
- Prior art keywords
- vacuum chamber
- evaporation source
- bias voltage
- ion plating
- source crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 238000007733 ion plating Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
第１図は本考案のイオンプレーテイング装置の
模式断面図であり、第２図は従来のイオンプレー
テイング装置の模式断面図である。
１…真空槽、２…蒸発源るつぼ、３…成膜用基
板、４…直流バイアス電圧印加電極、５…直流電
源、６…高周波励起コイル、７…マツチングボツ
クス、８…ＲＦ電源、９…ガス導入管、１０…熱
電子放出フイラメント。
FIG. 1 is a schematic sectional view of the ion plating apparatus of the present invention, and FIG. 2 is a schematic sectional view of a conventional ion plating apparatus. DESCRIPTION OF SYMBOLS 1... Vacuum chamber, 2... Evaporation source crucible, 3... Substrate for film formation, 4... DC bias voltage application electrode, 5... DC power supply, 6... High frequency excitation coil, 7... Matching box, 8... RF power supply, 9... Gas introduction pipe, 10... thermionic emission filament.
Claims (1)
空槽内で該蒸発源るつぼに対向する位置に設けら
れ、被成膜体を保持する基板ホルダと、該被成膜
体基板の上部に設けた直流バイアス電圧印加電極
と、 該蒸発源るつぼと該基板との間に設けられ、高
周波電源より給電される高周波励起用コイルと、
該真空槽内へガスを供給するためのガス導入部と
を有するイオンプレーテイング装置において、 直流バイアス電圧印加電極の近くに、該直流バ
イアス電圧印加電極に向けて熱電子放出用フイラ
メントを設けたことを特徴とするイオンプレーテ
イング装置。 (2) 上記熱電子放出フイラメントは少なくとも
１箇所以上設けられている実用新案登録請求の範
囲第１項記載のイオンプレーテイング装置。[Scope of Claim for Utility Model Registration] (1) A vacuum chamber, an evaporation source crucible disposed within the vacuum chamber, and an evaporation source crucible disposed in the vacuum chamber at a position opposite to the evaporation source crucible, which supports a film-forming object. a substrate holder for holding, a DC bias voltage applying electrode provided on the upper part of the substrate to be film-formed, a high-frequency excitation coil provided between the evaporation source crucible and the substrate and supplied with power from a high-frequency power source;
In the ion plating apparatus having a gas introduction part for supplying gas into the vacuum chamber, a thermionic emission filament is provided near the DC bias voltage application electrode and facing the DC bias voltage application electrode. An ion plating device featuring: (2) The ion plating apparatus according to claim 1, wherein the thermionic emitting filament is provided at at least one location.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16850486U JPS6373354U (en) | 1986-11-01 | 1986-11-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16850486U JPS6373354U (en) | 1986-11-01 | 1986-11-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6373354U true JPS6373354U (en) | 1988-05-16 |
Family
ID=31101436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16850486U Pending JPS6373354U (en) | 1986-11-01 | 1986-11-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6373354U (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55161066A (en) * | 1979-05-31 | 1980-12-15 | Sumitomo Electric Ind Ltd | Formation of covering film by ion plating |
| JPS5652860A (en) * | 1979-10-01 | 1981-05-12 | Mitsubishi Electric Corp | Ion injection device |
| JPS60211066A (en) * | 1984-04-06 | 1985-10-23 | Mitsubishi Electric Corp | Vapor depositing apparatus of tape |
| JPS616271A (en) * | 1984-06-20 | 1986-01-11 | Shinku Kikai Kogyo Kk | Method and device for bias ion plating |
-
1986
- 1986-11-01 JP JP16850486U patent/JPS6373354U/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55161066A (en) * | 1979-05-31 | 1980-12-15 | Sumitomo Electric Ind Ltd | Formation of covering film by ion plating |
| JPS5652860A (en) * | 1979-10-01 | 1981-05-12 | Mitsubishi Electric Corp | Ion injection device |
| JPS60211066A (en) * | 1984-04-06 | 1985-10-23 | Mitsubishi Electric Corp | Vapor depositing apparatus of tape |
| JPS616271A (en) * | 1984-06-20 | 1986-01-11 | Shinku Kikai Kogyo Kk | Method and device for bias ion plating |
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