JPS6164873A - Thin film forming method - Google Patents
Thin film forming methodInfo
- Publication number
- JPS6164873A JPS6164873A JP18559484A JP18559484A JPS6164873A JP S6164873 A JPS6164873 A JP S6164873A JP 18559484 A JP18559484 A JP 18559484A JP 18559484 A JP18559484 A JP 18559484A JP S6164873 A JPS6164873 A JP S6164873A
- Authority
- JP
- Japan
- Prior art keywords
- base material
- thin film
- mask material
- base
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Structural Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の技術分野］
本発明は基材表面の所定部分をマスク材で被覆し、基材
にマスク材の側から飛翔粒子を付着さけてなる薄膜形成
方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for forming a thin film by coating a predetermined portion of the surface of a substrate with a mask material and preventing flying particles from adhering to the substrate from the side of the mask material.
［発明の技術的背景コ
従来から、セラミック等の基材上に酸化物、窒化物、炭
化物等の薄膜を形成する方法としては、真空蒸着法、ス
パッタリング法等が知られている３゜これらの方法では
、例えば第３図に示したようにセラミック等の基材１の
表面に下地用の金属膜２を形成し、その表面の所定部分
をマスク材３て被覆し、マスク材３の側から加熱あるい
は放電により粒子化された薄膜形成物質を飛翔させて、
マスク材３に被覆されていない部分に付着させることに
より薄膜４を形成している。なお同図において５は基台
、６は基材１を固定する固定治具、矢印Ｑは粒子の飛翔
方向を示している。[Technical Background of the Invention] Conventionally, vacuum evaporation, sputtering, etc. have been known as methods for forming thin films of oxides, nitrides, carbides, etc. on substrates such as ceramics. In this method, for example, as shown in FIG. 3, a base metal film 2 is formed on the surface of a base material 1 such as ceramic, a predetermined portion of the surface is covered with a mask material 3, and A thin film-forming substance made into particles is made to fly by heating or electric discharge,
A thin film 4 is formed by adhering it to a portion not covered by the mask material 3. In the figure, 5 indicates a base, 6 indicates a fixture for fixing the base material 1, and arrow Q indicates the flying direction of particles.
［背景技術の問題点］
しかしながら、上述したような従来の薄膜形成方法では
、マスク材を除去した後に基材上に形成される薄膜４の
縁部Ｐが金属膜２の表面に対して段差を持った形になる
が、薄膜４の形成後に所定のパターンでレジスト材を被
着させエツチングを行なってファインラインの形成を行
なう際、レジスト材のパターンが上記の段差部分に跨っ
ている場合には、この部分でレジスト材と’ｉ＋’Ｊ
Ｂ’Ａ ４との間に空間ができてしまう。その結果、こ
の部分のエツチングが過剰に進み、薄膜４の縁部Ｐ付近
に形成されるファインラインが極端に幅狭になって、最
悪の場合には切断されてしまうことがある。[Problems with Background Art] However, in the conventional thin film forming method as described above, the edge P of the thin film 4 formed on the base material after removing the mask material has a step difference with respect to the surface of the metal film 2. However, when forming a fine line by depositing a resist material in a predetermined pattern after forming the thin film 4 and performing etching, if the pattern of the resist material straddles the above-mentioned stepped portion, , resist material and 'i+'J in this part
A space will be created between it and B'A 4. As a result, etching in this portion progresses excessively, and the fine line formed near the edge P of the thin film 4 becomes extremely narrow, and in the worst case, may be cut off.
また薄１ｔ！０４の表面にさらに他の薄膜を形成する場
合には、段差部分が盛り上がった形状になって、上層部
の表面平滑度が苔しく低下してしまうという問題があっ
た。Another thin 1t! When another thin film is further formed on the surface of 04, there is a problem in that the step portion becomes a raised shape and the surface smoothness of the upper layer portion becomes mossy and deteriorates.
［発明の目的］
本発明は上述したような従来の薄膜形成方法の問題点を
解消すべくなされたもので、基材表面に段差のない薄膜
を形成することができ、その結果、形成された薄膜の縁
部１付近でも良好なファインラインが得られるとともに
、形成された薄膜の上にさらに膜を形成する場合でも上
層部が盛り上がるようなことがない薄膜形成方法の提供
を目的としている。[Object of the Invention] The present invention has been made to solve the problems of the conventional thin film forming method as described above, and it is possible to form a thin film without steps on the surface of a base material. To provide a thin film forming method in which a good fine line is obtained even near the edge 1 of the thin film, and the upper layer does not swell even when a further film is formed on the formed thin film.
［発明の概要コ
すなわち本発明の薄膜形成方法は、基材表面の所定部分
をマスク材で′ｍ覆し、１１ａ記も４祠に前記マスク材
の側から飛翔粒子を付着させてなる薄膜形成方法におい
て、前記マスク材の縁部と前記基材の表面との間に前記
飛翔粒子が回折する程度の空隙を設けることを特徴とし
ている。[Summary of the Invention In other words, the thin film forming method of the present invention is a thin film forming method in which a predetermined portion of the surface of a base material is covered with a mask material, and flying particles are attached to the fourth hole from the side of the mask material in Section 11a. The method is characterized in that a gap is provided between the edge of the mask material and the surface of the base material to the extent that the flying particles are diffracted.
［発明の実施例］
以下本発明の詳細を図面に示す実施例について説明する
。[Embodiments of the Invention] Details of the present invention will be described below with reference to embodiments shown in the drawings.
第１図に示したのは本発明方法の一実施例を示す横断面
図である。FIG. 1 is a cross-sectional view showing one embodiment of the method of the present invention.
同図において７は薄膜が形成されるセラミック等からな
る基材、８はその表面に予め形成しておく下地用の金属
膜、９ａ 、９ｂは基材７を固定する固定冶具、１０は
基台を示している。さらに１１は７７ＩＪ膜を形成した
い部分のみを露出させるマスク材を示している。In the figure, 7 is a base material made of ceramic or the like on which a thin film is formed, 8 is a metal film for the base formed on the surface of the base material, 9a and 9b are fixing jigs for fixing the base material 7, and 10 is a base. It shows. Further, reference numeral 11 indicates a mask material that exposes only the portion where the 77IJ film is to be formed.
そして本実施例においてはマスク材１１と基材７の表面
の金属膜８との間に所定の間隙りを設ける。この間隙り
はマスク材１１の側から加熱あるいは放電により粒子化
された物質を飛翔させたときに、その飛翔粒子が回折す
るような距離にされている。矢印Ｑはその飛翔方向であ
る。In this embodiment, a predetermined gap is provided between the mask material 11 and the metal film 8 on the surface of the base material 7. This gap is set at such a distance that when particles of material are ejected from the mask material 11 side by heating or electric discharge, the ejected particles will be diffracted. Arrow Q is the direction of flight.
本実施例においては、酸化物、窒化物、炭化物等を加熱
あるいは放電により粒子化し、マスク材１１の側から飛
翔させると飛翔粒子は間隙りによりマスク材１１の縁部
で回折し、間隙りの内部方向へ傾゛斜するように金属膜
８に付着する。In this example, when oxides, nitrides, carbides, etc. are made into particles by heating or electric discharge, and are made to fly from the side of the mask material 11, the flying particles are diffracted at the edge of the mask material 11 due to gaps, and It is attached to the metal film 8 so as to be inclined inward.
その結果、簿ＩＩ！１２の縁部Ｐの段差が解消されて、
その上部にさらに薄膜を形成する場合でも、上層部の表
面平滑度が低下することがなく、また薄膜１２に７フイ
ンラインを形成する際に薄膜１２の縁部Ｐに跨ってレジ
スト材のパターンを形成しても空間ができないのでエツ
チングが過剰に進むことがない。As a result, book II! The step on the edge P of 12 has been eliminated,
Even when a thin film is further formed on top of the thin film, the surface smoothness of the upper layer does not deteriorate, and when forming seven fin lines on the thin film 12, the pattern of the resist material is spread over the edge P of the thin film 12. Even if it is formed, no space is created, so etching does not proceed excessively.
なお上述した実施例では、マスク材１１は基台１０に対
して固定されているが、本発明はこれに限定されるもの
ではなく、マスク材１１を止め具等を用いて基材７に対
して固定してもよい。また下地用の金属膜８は必ずしも
金属であるとは限らず、また必ずしも形成すべきもので
はない。In the above embodiment, the mask material 11 is fixed to the base 10, but the present invention is not limited to this, and the mask material 11 is fixed to the base material 7 using a fastener or the like. It may also be fixed. Further, the metal film 8 for the base is not necessarily made of metal, nor should it necessarily be formed.
さらに上述した実施例では、マスク材１１と基材７との
間に間隙りを設けることにより飛翔粒子を回折させてい
るが、マスク材１１の縁部に、第２図に示したような切
欠部１３、あるいはテーパ一部（図示せず）等を形成し
て飛翔粒子を回折さヒるようにしてもよい。なお１間隙
りおよび切欠部１３等の設定条件により飛翔粒子の回折
状態が変化するので、形成される薄膜１２の縁部Ｐの傾
斜が最適になる設定を実験的に求めるようにする。Furthermore, in the embodiment described above, flying particles are diffracted by providing a gap between the mask material 11 and the base material 7, but the edge of the mask material 11 is provided with a notch as shown in FIG. The portion 13 or a tapered portion (not shown) may be formed to diffract flying particles. Note that since the diffraction state of the flying particles changes depending on the setting conditions of the gap, notch 13, etc., the setting that optimizes the slope of the edge P of the thin film 12 to be formed is experimentally determined.
なお基材７としては、セラミック基板の他にガラス基板
、ホウロウ基板あるいはシリコンウェハ等が考えられる
が、本発明方法はいづ−れの蓋材の表面に薄膜を形成す
る場合でも、マスク材の縁部と基材の表面との間に空隙
を設ければ実施可能である。In addition to the ceramic substrate, the base material 7 may be a glass substrate, an enameled substrate, or a silicon wafer, but the method of the present invention can be used to form a thin film on the surface of any lid material. This can be implemented by providing a gap between the part and the surface of the base material.
［発明の効果コ
以上説明したように本発明によれば、基材表面の所定部
分をマスク材で被覆し、基材にマスク材の側から飛翔粒
子を付着させてなる薄膜形成方法において、マスク材の
パターンの縁部と基材の表面との間に飛開粒子が回折す
る稈度の空隙を設けるので、基材表面に段差のない薄膜
を形成することができ、その結果、形成された薄膜の縁
部付近でも良好なファインラインが得られるとともに、
形成されたｉｌＪの上にさらに膜を形成する場合でも上
層部が盛り上がるようなことがない。[Effects of the Invention] As explained above, according to the present invention, in a thin film forming method in which a predetermined portion of the surface of a base material is coated with a mask material and flying particles are attached to the base material from the mask material side, Since a gap is provided between the edge of the pattern of the material and the surface of the base material in which the blown particles are diffracted, a thin film with no steps can be formed on the surface of the base material. Good fine lines can be obtained even near the edges of the thin film, and
Even when a further film is formed on the formed ilJ, the upper layer does not bulge.
第１図および第２図は本発明方法の一実施例の構成を示
す横断面図、第３図は従来の薄膜形成方法を示す横断面
図である。
１．７・・・・・・・・・・・・・・・基 材２．８・
・・・・・・・・・・・・・・金属膜３．１１・・・・
・・・・・・・・マスク材４．１２・・・・・・・・・
・・・薄膜５．１０・・・・・・・・・・・・基 台６
．９ａ 、９ｂ・・・固定治具
１３・・・・・・・・・・・・・・・・・・切欠部Ｄ・
・・・・・・・・・・・・・・・・・・・・間 隙代理
人弁理士 須 山 佐 −
第１図
第２図
第３図1 and 2 are cross-sectional views showing the structure of an embodiment of the method of the present invention, and FIG. 3 is a cross-sectional view showing a conventional thin film forming method. 1.7・・・・・・・・・・・・Base material 2.8・
・・・・・・・・・・・・Metal film 3.11・・・・
・・・・・・Mask material 4.12・・・・・・・・・
... Thin film 5.10 ... ... Base 6
．． 9a, 9b... Fixing jig 13...... Notch D.
・・・・・・・・・・・・・・・・・・・・・Patent attorney representing the gap Sasu Suyama - Figure 1 Figure 2 Figure 3
Claims (3)
材に前記マスク材の側から飛翔粒子を付着させてなる薄
膜形成方法において、前記マスク材の縁部と前記基材の
表面との間に前記飛翔粒子が回折する程度の空隙を設け
ることを特徴とする薄膜形成方法。(1) A thin film forming method comprising coating a predetermined portion of the surface of a base material with a mask material and adhering flying particles to the base material from the side of the mask material, wherein the edge of the mask material and the surface of the base material A method for forming a thin film, characterized in that a gap is provided between the substrate and the substrate to allow the flying particles to diffract.
特許請求の範囲第１項記載の薄膜形成方法。(2) The thin film forming method according to claim 1, wherein the gap between the edge of the mask material and the base material is made variable.
形成しておく特許請求の範囲第１項または第２項記載の
薄膜形成方法。(3) The thin film forming method according to claim 1 or 2, wherein a film made of a material different from that of the base material is previously formed on the surface of the base material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18559484A JPS6164873A (en) | 1984-09-05 | 1984-09-05 | Thin film forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18559484A JPS6164873A (en) | 1984-09-05 | 1984-09-05 | Thin film forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6164873A true JPS6164873A (en) | 1986-04-03 |
Family
ID=16173530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18559484A Pending JPS6164873A (en) | 1984-09-05 | 1984-09-05 | Thin film forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6164873A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0535849U (en) * | 1991-10-14 | 1993-05-14 | セントラル硝子株式会社 | Masking material |
| JP2017002338A (en) * | 2015-06-05 | 2017-01-05 | 旭硝子株式会社 | Optical member and optical member manufacturing method |
| JP2022171973A (en) * | 2018-12-05 | 2022-11-11 | 日本特殊陶業株式会社 | Thermal spraying member manufacturing method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58221272A (en) * | 1982-06-15 | 1983-12-22 | Fujitsu Ltd | Mask supporting device in vapor deposition device with mask |
-
1984
- 1984-09-05 JP JP18559484A patent/JPS6164873A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58221272A (en) * | 1982-06-15 | 1983-12-22 | Fujitsu Ltd | Mask supporting device in vapor deposition device with mask |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0535849U (en) * | 1991-10-14 | 1993-05-14 | セントラル硝子株式会社 | Masking material |
| JP2017002338A (en) * | 2015-06-05 | 2017-01-05 | 旭硝子株式会社 | Optical member and optical member manufacturing method |
| JP2022171973A (en) * | 2018-12-05 | 2022-11-11 | 日本特殊陶業株式会社 | Thermal spraying member manufacturing method |
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