JPS617633A - Purifier of semiconductor wafer by pure water - Google Patents
Purifier of semiconductor wafer by pure waterInfo
- Publication number
- JPS617633A JPS617633A JP12875284A JP12875284A JPS617633A JP S617633 A JPS617633 A JP S617633A JP 12875284 A JP12875284 A JP 12875284A JP 12875284 A JP12875284 A JP 12875284A JP S617633 A JPS617633 A JP S617633A
- Authority
- JP
- Japan
- Prior art keywords
- pure water
- cleaning
- inert gas
- semiconductor wafer
- cleaning tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は半導体ウェハーの純水洗浄を行なうための装置
の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in an apparatus for cleaning semiconductor wafers with pure water.
ICやLSI等の半導体装置の製造に用いられるウェハ
ー状の半導体基板、即ち半導体ウェハーには高度の清浄
度が要求される。このため、半導体ウェハーはその中に
トランジスタ等の素子を形成する前に洗浄工程に回され
て清浄化されるが、この洗浄工程は薬品による洗浄およ
びその後の純水洗浄からなっている。A high degree of cleanliness is required for wafer-shaped semiconductor substrates, ie, semiconductor wafers, used for manufacturing semiconductor devices such as ICs and LSIs. For this reason, semiconductor wafers are sent to a cleaning process to be cleaned before forming elements such as transistors therein, and this cleaning process consists of cleaning with chemicals and subsequent cleaning with pure water.
ところで、上記純水洗浄は従来第2図に示す装置を用い
て行なわれている。同図において、1は洗浄槽である。Incidentally, the pure water cleaning described above has conventionally been carried out using an apparatus shown in FIG. In the figure, 1 is a cleaning tank.
該洗浄411は上方が解放されており、且つ下部には純
水供給管2が連結されている。The washing 411 is open at the top and connected to the pure water supply pipe 2 at the bottom.
この装置を用いた半導体ウェハーの洗浄は、ウェハー3
・・・をキャリア4ごと洗浄槽1内に収容し、供給管2
から純水を連続的に供給することにより行なう。これに
よって、図中矢印で示すように純水は半導体ウェハー3
・・・の下から洗浄槽1内を上昇してオーバーフローし
、半導体ウェハー3・・・に付着している薬品等の不純
物を洗い去る。この場合、半導体ウェハー3・・・がど
の程度洗浄されたかはオーバーフローした水の比抵抗値
を測定して判定され、この1直が供給された純水の比抵
抗値にまで低下したときに洗浄を完了する。When cleaning semiconductor wafers using this equipment, wafer 3
... is housed in the cleaning tank 1 along with the carrier 4, and the supply pipe 2
This is done by continuously supplying pure water from the As a result, the pure water is transferred to the semiconductor wafer 3 as shown by the arrow in the figure.
. . rises in the cleaning tank 1 from below and overflows, washing away impurities such as chemicals adhering to the semiconductor wafers 3 . In this case, the extent to which the semiconductor wafers 3... have been cleaned is determined by measuring the specific resistance value of the overflow water, and when the specific resistance value of the overflow water has decreased to the value of the supplied pure water, the cleaning is performed. complete.
上記のオーバーフロ一式洗浄装置以外にも、−定FRI
11オーバーフローを行なった後に洗浄槽1内の純水を
全部流出させ、再度オーバーフローを行なうようにした
リピート方式の洗浄装置も従来使用されている。このリ
ピート方式の純水洗浄装置は、第1図のオーバーフロ一
式洗浄装置における洗浄槽1の一部に排水口を設け、該
排水口にタイマーで作動する受動開閉弁をとりつけた構
成になっている。In addition to the above-mentioned overflow complete cleaning equipment, -FRI
A repeat type cleaning device has also been used in the past, in which all of the pure water in the cleaning tank 1 is flowed out after overflowing, and overflowing is performed again. This repeat-type pure water cleaning device has a structure in which a drain is provided in a part of the cleaning tank 1 in the overflow complete cleaning device shown in Fig. 1, and a passive on-off valve operated by a timer is attached to the drain. There is.
上記従来の純水洗浄装置は洗浄効率が低いという問題が
ある。例えば第2図のオーバーフロ一式洗浄装置の場合
、洗浄槽および治具の大きさや1回に洗浄する半導体ウ
ェハーの枚数、また純水の供給圧力にもよるが、過去の
実績によると洗浄完了までに約15分以上の時間を要し
、その間に使用される純水の消費量も軽視し得ない状況
にある。The conventional pure water cleaning device described above has a problem of low cleaning efficiency. For example, in the case of the overflow complete cleaning equipment shown in Figure 2, past results show that it will take until cleaning is complete, although it depends on the size of the cleaning tank and jig, the number of semiconductor wafers to be cleaned at one time, and the supply pressure of pure water. The process takes about 15 minutes or more, and the amount of pure water consumed during that time cannot be underestimated.
〔発明の目的〕
本発明は上記事情に鑑みてなされたもので、洗浄時間の
短縮化および純水使用量の節減を可能とした半導体ウェ
ハーの純水洗浄装置を提供し、ひいては半導体ウェハー
のコスト低減をも可能とすることを目的とし、てなされ
たものである。[Object of the Invention] The present invention has been made in view of the above circumstances, and provides a deionized water cleaning device for semiconductor wafers that makes it possible to shorten the cleaning time and reduce the amount of deionized water used, thereby reducing the cost of semiconductor wafers. This was done with the aim of making it possible to reduce the amount of water used.
本発明による半導体ウェハーの純水洗浄装置は、洗浄す
べき半導体ウェハーを収容する洗浄槽と、該洗浄槽内に
純水を供給する純水供給管と、前記半導体ウェハーの下
から洗浄槽内に不活性ガスを供給する不活性ガス供給管
とを具備し、洗浄槽内に純水を供給すると共に、該純水
中に不活性ガスをバブリングさせながら前記半導体ウェ
ハーを洗浄するようにしたことを特徴とするものである
。A deionized water cleaning device for semiconductor wafers according to the present invention includes a cleaning tank for accommodating semiconductor wafers to be cleaned, a deionized water supply pipe for supplying pure water into the cleaning tank, and a deionized water supply pipe for supplying pure water from below the semiconductor wafer into the cleaning tank. and an inert gas supply pipe for supplying an inert gas, and the semiconductor wafer is cleaned while supplying pure water into the cleaning tank and bubbling the inert gas into the pure water. This is a characteristic feature.
本発明における不活性ガスとしては、アルゴンやヘリウ
ム等の稀ガス類の他、窒素ガス(N2)を使用すること
ができる。As the inert gas in the present invention, nitrogen gas (N2) can be used in addition to rare gases such as argon and helium.
本発明の純水洗浄装置を用いて半導体ウェハーの洗浄を
行なえば、上記不活性ガスのバブリングによる強制的な
洗浄作用が加わるため、純水のオーバーフローのみの場
合に比較して半導体ウェハーの表面から薬品等の付着物
をより効率的に除去することができる。When semiconductor wafers are cleaned using the deionized water cleaning apparatus of the present invention, the forcible cleaning action by bubbling of the above-mentioned inert gas is added, so that the surface of the semiconductor wafer is removed from the surface of the semiconductor wafer, compared to the case where only pure water overflows. Adherences such as chemicals can be removed more efficiently.
なお、本発明はオーバーフロ一方式およびリピート方式
の何れの装置にも適用することが可能である。Note that the present invention can be applied to both overflow type and repeat type devices.
以下に本発明の一実施例を説明する。 ′第1図は
、本発明を適用したリピート方式による半導体ウェハー
純水洗浄装置の一実施例を示している。同図において、
11は洗浄槽である。該洗浄槽11の下部には純水供給
管12および不活性ガス供給管13が連結されており、
不活性ガス供給管13は洗浄槽11の底部に配設された
パンチングパイプに接続されている。また、洗浄槽11
の下部には排水管14が連結されており、該排水管には
自動開閉弁15が設けられている。該自動開閉弁15は
所定の時間間隔で開閉し、洗浄槽11内に満たされた洗
浄水を排出するようになっている。16は洗浄槽内に設
けられたメツシュ状の載置台である。An embodiment of the present invention will be described below. 'FIG. 1 shows an embodiment of a semiconductor wafer pure water cleaning apparatus using a repeat method to which the present invention is applied. In the same figure,
11 is a cleaning tank. A pure water supply pipe 12 and an inert gas supply pipe 13 are connected to the lower part of the cleaning tank 11.
The inert gas supply pipe 13 is connected to a punching pipe arranged at the bottom of the cleaning tank 11. In addition, the cleaning tank 11
A drain pipe 14 is connected to the lower part of the drain pipe, and an automatic opening/closing valve 15 is provided in the drain pipe. The automatic opening/closing valve 15 opens and closes at predetermined time intervals to discharge the cleaning water filled in the cleaning tank 11. Reference numeral 16 denotes a mesh-like mounting table provided in the cleaning tank.
上記実施例の純水洗浄装置を用いて半導体ウェハーを洗
浄するには、キャリア3′に収納したままで半導体ウェ
ハー4・・・を載置台16上に載せ、供給管12から純
水を導入すると共に供給管13から不活性ガスを導入し
、リピート方式により洗浄を行なう。その際、純水がフ
ローされると同時に、パンチングパイプからは不活性ガ
スが気泡状態となってキャリア3′および半導体ウェハ
ー4・・・の表面に衝撃を与える。こうして不活性ガス
による物理的な洗浄作用が加わる結果、純水による洗浄
がより効果的に作用し、不活性ガスの吹込みを採用しな
い従来の単なるリピート方式の純水洗浄装置に較べて高
い洗浄効率が得られる。To clean a semiconductor wafer using the deionized water cleaning device of the above embodiment, the semiconductor wafer 4 is placed on the mounting table 16 while being housed in the carrier 3', and deionized water is introduced from the supply pipe 12. At the same time, an inert gas is introduced from the supply pipe 13, and cleaning is performed by a repeat method. At this time, at the same time as pure water flows, inert gas forms bubbles from the punching pipe and impacts the surfaces of the carrier 3' and the semiconductor wafers 4. As a result of adding the physical cleaning action of the inert gas, the cleaning with pure water works more effectively, resulting in a higher level of cleaning compared to conventional pure water cleaning equipment that does not use inert gas injection. Gain efficiency.
上記第1図の実施例になる純水洗浄装置を用いて半導体
ウェハーの洗浄を行ない、洗浄完了までに要する時間を
流去洗浄水の比抵抗値を測定して追跡したところ、第3
図の曲線Aに示す結果が得られた。なお、同図にはオー
バーフロ一方式による従来の純水洗浄装置(曲線X)、
′リピート方式による従来の純水洗浄装置(曲線Y)の
夫々について行なった同様の追跡結果を併記しである。A semiconductor wafer was cleaned using the deionized water cleaning apparatus shown in FIG.
The results shown in curve A in the figure were obtained. In addition, the figure shows a conventional pure water cleaning device with one overflow type (curve X),
'Similar tracking results for each conventional pure water cleaning device (curve Y) using the repeat method are also shown.
この結果から明らかなように、上記実施例の洗浄装置に
よれば従来のオーバーフロ一方式の洗浄装置の約1/2
、従来のリピート方式の洗浄装置の約2/3の洗浄時間
で純水洗浄を完了できることが可能となった。As is clear from this result, the cleaning device of the above example has about 1/2 of the conventional one-overflow type cleaning device.
It has become possible to complete pure water cleaning in about 2/3 of the cleaning time of conventional repeat-type cleaning equipment.
以上詳述したように、本発明による半導体ウェハーの純
水洗浄装置を用いれば、洗浄時間の短縮化および純水使
用量の節減を可能とし、ひいては半導体ウェハーのコス
ト低減が可能となる等、顕著な効果が得られるものであ
る。As detailed above, by using the deionized water cleaning apparatus for semiconductor wafers according to the present invention, it is possible to shorten the cleaning time and reduce the amount of deionized water used, which in turn makes it possible to reduce the cost of semiconductor wafers, etc. It is possible to obtain the following effects.
第1図は本発明による半導体ウェハー純水洗浄装置の一
実施例を示す説明図、第2図はオーバーフロ一方式によ
る従来の純水洗浄装置を示す説明図、第3図は第1図の
実施例になる純水洗浄装置および従来の洗浄装置の夫々
について、半導体ウェハーの洗浄完了までの様子を流去
水の比抵抗値を測定することにより追跡した結果を示す
線図である。
11・・・洗浄槽、12・・・純水供給管、13・・・
不活性ガス供給管、14・・・排水管、15・・・自動
開閉弁、16・・・載置台、3′・・・ウェハーキャリ
ア、4・・・半導体ウェハーFIG. 1 is an explanatory diagram showing one embodiment of a semiconductor wafer deionized water cleaning apparatus according to the present invention, FIG. 2 is an explanatory diagram showing a conventional deionized water cleaning apparatus using an overflow type, and FIG. FIG. 2 is a diagram showing the results of tracking the progress of semiconductor wafer cleaning until the completion of cleaning of a semiconductor wafer in a pure water cleaning apparatus according to an example and a conventional cleaning apparatus by measuring the specific resistance value of flowing water. 11...Cleaning tank, 12...Pure water supply pipe, 13...
Inert gas supply pipe, 14... Drain pipe, 15... Automatic opening/closing valve, 16... Mounting table, 3'... Wafer carrier, 4... Semiconductor wafer
Claims (1)
槽内に純水を供給する純水供給管と、前記半導体ウェハ
ーの下から洗浄槽内に不活性ガスを供給する不活性ガス
供給管とを具備し、洗浄槽内に純水を供給すると共に、
該純水中に不活性ガスをバブリングさせながら前記半導
体ウェハーを洗浄するようにしたことを特徴とする半導
体ウェハーの純水洗浄装置。A cleaning tank that accommodates semiconductor wafers to be cleaned, a pure water supply pipe that supplies pure water into the cleaning tank, and an inert gas supply pipe that supplies inert gas into the cleaning tank from below the semiconductor wafer. is equipped with, supplies pure water into the cleaning tank, and
A pure water cleaning apparatus for semiconductor wafers, characterized in that the semiconductor wafer is cleaned while bubbling an inert gas into the pure water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12875284A JPS617633A (en) | 1984-06-22 | 1984-06-22 | Purifier of semiconductor wafer by pure water |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12875284A JPS617633A (en) | 1984-06-22 | 1984-06-22 | Purifier of semiconductor wafer by pure water |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS617633A true JPS617633A (en) | 1986-01-14 |
Family
ID=14992584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12875284A Pending JPS617633A (en) | 1984-06-22 | 1984-06-22 | Purifier of semiconductor wafer by pure water |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS617633A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0458527A (en) * | 1990-06-28 | 1992-02-25 | Ebara Res Co Ltd | Cleaning method |
| JP2020136537A (en) * | 2019-02-21 | 2020-08-31 | キオクシア株式会社 | Substrate processing equipment |
-
1984
- 1984-06-22 JP JP12875284A patent/JPS617633A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0458527A (en) * | 1990-06-28 | 1992-02-25 | Ebara Res Co Ltd | Cleaning method |
| JP2020136537A (en) * | 2019-02-21 | 2020-08-31 | キオクシア株式会社 | Substrate processing equipment |
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