JPS6184366A - Mask material for vapor deposition - Google Patents
Mask material for vapor depositionInfo
- Publication number
- JPS6184366A JPS6184366A JP20668084A JP20668084A JPS6184366A JP S6184366 A JPS6184366 A JP S6184366A JP 20668084 A JP20668084 A JP 20668084A JP 20668084 A JP20668084 A JP 20668084A JP S6184366 A JPS6184366 A JP S6184366A
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- mask
- evaporation
- weight
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Physical Vapour Deposition (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は蒸着用マスク月１１、特に、Ｆｅ−４２重量
％Ｎｉからなるリードフレームに蒸着をスポット的に行
なうための蒸着用マスク材Ｉｔに関する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a vapor deposition mask material It for spot vapor deposition on a lead frame made of Fe-42% by weight Ni. .
［従来の技術］
以下、蒸発材料としてアルミニウムを一例として説明す
る。[Prior Art] Hereinafter, aluminum will be explained as an example of an evaporation material.
第２図は通常、アルミニウム蒸着を行なうための真空蒸
着の概略的構成を示す図である。第２図において、真空
を保つためのチャンバ１内部に、蒸着用材料となるアル
ミニウム２を保持するるつは３と、るつは３に対向して
配置されてアルミニウム蒸着されるＦｅ−４２％Ｘ＋
＜％は重量％、以下全て同じとする）を主成分とする
基板４と、基板４の所定の領域にのみ蒸着を行なうため
の蒸着用マスク５と、蒸着用材料であるアルミニウム２
を溶融するための電子線を与える電子銃６とが設けられ
る。FIG. 2 is a diagram showing a general configuration of a vacuum evaporation system for normally performing aluminum evaporation. In Fig. 2, inside a chamber 1 for maintaining a vacuum, a melt 3 holds aluminum 2, which is a material for vapor deposition, and a melt 3 is placed opposite to the melt 3 to deposit Fe-42% aluminum. X+
<% by weight, hereinafter the same)), a vapor deposition mask 5 for performing vapor deposition only on a predetermined area of the substrate 4, and aluminum 2 which is a vapor deposition material.
An electron gun 6 is provided to provide an electron beam for melting.
第３図は蒸着用マスクの形状を示す図である。FIG. 3 is a diagram showing the shape of a mask for vapor deposition.
第３図において、マスク５は基板４の中央にスポット的
に蒸着を行なうための四角形または円形の孔７が設けら
れる。In FIG. 3, a mask 5 is provided with a rectangular or circular hole 7 in the center of a substrate 4 for performing spot deposition.
第４図はマスクと蒸着されるリードフレームとの配置を
示づ゛平面図である。第４図において、マスク５十に、
マスク５に設けられる孔７がリードル−ム４の所定の位
置にくるようにリードフレ−ム４が配置される。以下、
第２図ないし第４図を参照してアルミニウム蒸着につい
て説明覆る。FIG. 4 is a plan view showing the arrangement of a mask and a lead frame to be deposited. In FIG. 4, in the mask 50,
The lead frame 4 is arranged so that the hole 7 formed in the mask 5 is located at a predetermined position in the lead room 4. below,
Aluminum deposition will be explained with reference to FIGS. 2 to 4.
チャンバ１内は真空ポンプ（図示せず）によって一定の
真空度に保たれる。次に、るつぼ３内のアルミニウム２
は電子銃６からの電子線により溶融されて蒸発する。蒸
発したアルミニウムは蒸着用マスク５に設けられた孔７
を通過してリードフレーム４の所定の領域（アルミニウ
ムＡｍ線ボンディングエリア８）に蒸着する。以上のよ
うにして、リードフレーム４の所定の領域（ボンディン
グエリア８）にアルミニウムを２〜１０μｍスポット的
に蒸着していた。The inside of the chamber 1 is maintained at a constant degree of vacuum by a vacuum pump (not shown). Next, aluminum 2 in crucible 3
is melted and evaporated by the electron beam from the electron gun 6. The evaporated aluminum flows through the hole 7 provided in the evaporation mask 5.
and is vapor-deposited onto a predetermined area (aluminum/Am wire bonding area 8) of the lead frame 4. As described above, aluminum was spot-deposited to a predetermined region (bonding area 8) of the lead frame 4 to a thickness of 2 to 10 μm.
［発明が解決ｌ）ようとする問題点］
従来の装置においては、蒸着用マスク材わ１と１ノてＦ
ｅ−４２％ｆｆ１ｆｉＮ＋を主成分とする物質（４２７
０イ）かステンレス鋼を用いていたがそれぞれに問題が
あった。[Problems to be solved by the invention] In the conventional apparatus, the mask materials for vapor deposition W1 and F
Substance whose main component is e-42%ff1fiN+ (427
0a) and stainless steel were used, but each had its own problems.
まず、Ｆｅ−４２重爵％Ｎｉを主成分とする物質をマス
ク材料として用いた場合、蒸着時にマスクに、アルミニ
ウムが付着し、そのことにより、リードフレームどマス
クが密着し、リードフレームをマスクから離そうとづる
と、いわゆる“ビン曲がり″（リードの曲がり）が生ず
るという欠点がある。この欠点を除去するためにＡｌｌ
付着の生じないステンレス鋼が用いられる。First, when a substance containing Fe-42%Ni as a main component is used as a mask material, aluminum adheres to the mask during vapor deposition, which causes the mask to adhere to the lead frame and the lead frame from the mask. If you try to separate it, it has the disadvantage that so-called "bin bending" (bending of the lead) occurs. To remove this drawback, All
Non-stick stainless steel is used.
しかし、ステンレス鋼、たとえばＦｅ−１７〜２８重量
％Ｃｒを主成分とＪるステンレス鋼をマスク材として用
いると、基板とマスクとの熱膨張率が異なるので、蒸着
時（蒸着時には基板を加熱している）にマスクに設けら
れている孔の位置がリードフレームの所定の位置よりず
れ、いわゆる“Ａｍずれ°′ （リードフレームの所定
の領域よりスポット蒸着の位置がずれる）が生ずる。具
体的に数字をあげて説明する。リードフレームを構成す
るＦｅ−４２重量％Ｎｉを主成分とする物質およびＦｅ
−１７〜２８重量％Ｃｒを主成分とするステンレス鋼の
０〜３００℃における熱膨張係数はそれぞれ、４０〜６
０ｘ１０− ’ ｃｍ／’Ｃ，１０５〜１１５Ｘ１０−
’ ａｍ／℃であるので、５ｃｍ四方のステンレス材
マスクを用い３００℃に加熱して蒸着すると、最大
５ｘ （１１５−４０）ｘｌ Ｃ）７．’ ｘ３００＝
０．１１３゜
すなわち、０．１１３ｍｍの蒸着位置のずれが生ずる。However, when stainless steel, for example stainless steel whose main component is Fe-17 to 28% Cr, is used as a mask material, the thermal expansion coefficients of the substrate and mask are different, so the substrate must be heated during vapor deposition (during vapor deposition). The position of the hole provided in the mask deviates from the predetermined position of the lead frame, resulting in so-called "Am deviation °' (the position of spot evaporation deviates from the predetermined area of the lead frame). Specifically, Let me explain with some numbers: Fe-42wt% Ni-based material and Fe constituting the lead frame.
The thermal expansion coefficient of stainless steel whose main component is -17 to 28% Cr at 0 to 300°C is 40 to 6, respectively.
0x10-'cm/'C, 105~115X10-
' am/°C, so if a 5cm square stainless steel mask is heated to 300°C for vapor deposition, a maximum of 5x (115-40)xl C)7. 'x300=
The vapor deposition position shifts by 0.113°, that is, by 0.113 mm.
したがって、リードフレームの所定の位置にスポット的
にＡ４蒸着を行なうことができないという欠点がある。Therefore, there is a drawback that A4 vapor deposition cannot be performed spot-on at predetermined positions on the lead frame.
この発明の目的は上述の従来の蒸着マスクの有する欠点
を除去し、１２曲がり″や゛蒸着位置ずれ′°の生じな
い蒸着用マスクを提供することである。An object of the present invention is to eliminate the drawbacks of the conventional vapor deposition masks described above, and to provide a vapor deposition mask that does not cause bending or deviation of the vapor deposition position.
Ｌ問題点を解決するための手段］
この発明にかかる蒸着用マスクの材料として、リードフ
レームを構成するＦｅ −４２重量％Ｎ；を主成分とす
る物質と同様の熱膨張係数を有し、かつ蒸発材料の付着
の生じないＦｅ −４２ｌｉ量％Ｎｉ−０．５〜６１ｆ
１％Ｃｒを主成分とする材質を用いる。[Means for Solving the L Problem] As a material for the vapor deposition mask according to the present invention, a material having a coefficient of thermal expansion similar to that of a material mainly composed of Fe-42%N by weight constituting the lead frame, and Fe-42li amount%Ni-0.5 to 61f without adhesion of evaporation material
A material containing 1% Cr as a main component is used.
［作用］
」一連のような、Ｆｅ−４２重量％Ｎｉ −０，５〜６
重量％Ｃｒを主成分とする物質をマスク材料として用い
れば、基板である。Ｆｅ−４２％重ＩＮｉを主成分とす
る物質とほぼ同様の熱膨張係数を有するので、蒸着時に
おける基板とマスクとの熱膨張差に起因する蒸着位置の
ずれは生ぜず、かつマスク表面に二酸化クロムＣｒＯ２
が形成されて蒸発材料の密着が生じないので、マスクと
基板どが密着することがなく、従来、基板をマスクから
取外すときに生じていたリードフレームの曲がり（１２
曲がり′°）が生じない。[Action] Fe-42wt%Ni-0,5~6, such as a series of
If a substance containing Cr as a main component by weight% is used as a mask material, it is a substrate. Since it has almost the same coefficient of thermal expansion as a material whose main component is Fe-42% heavy INi, there is no misalignment of the evaporation position due to the difference in thermal expansion between the substrate and the mask during evaporation, and there is no carbon dioxide on the mask surface. Chromium CrO2
is formed and the evaporation material does not come into close contact with each other. Therefore, the mask and the substrate do not come into close contact with each other, and the bending of the lead frame (12
No bending ('°) occurs.
［実施例１
以下、蒸発材料としてアルミニウムを用いた場合を一例
として説明する。[Example 1] Hereinafter, a case where aluminum is used as the evaporation material will be described as an example.
この発明においては、蒸着用マスク材料としてＦｅ−４
２重陽％Ｎｉ−０，５〜６重１％Ｃｒを主成分とする物
質で構成される材料を用いる。ここで、クロムＯｒの含
有量が０．５〜６重Ｍ％と−〇−
されているのは、クロムの含有量が０．５重量％以下、
特に、０．１重量％以下では二酸化クロムＣｒ０ｚの酸
化物がその表面にできにくいので、蒸着時のＡ９密肴（
マスクと基板との密着）が発生しゃすり１２曲がり′°
が生じやすい。また、クロムＯｒの含有量が６重量％以
上になると、熱膨張係数が８０Ｘ １０− ’ ａｍ／
℃以上となり、基板との熱膨張係数の差が大きくなりＡ
［ずれが生じやすくなる。In this invention, Fe-4 is used as the vapor deposition mask material.
A material composed of a substance whose main components are 2% Ni-0.5 to 6% Cr is used. Here, the content of chromium Or is 0.5 to 6% by weight -〇- means that the content of chromium is 0.5% by weight or less,
In particular, if chromium dioxide Cr0z is less than 0.1% by weight, oxides of chromium dioxide Cr0z are difficult to form on the surface.
Close contact between the mask and the substrate occurs, causing 12 bends.
is likely to occur. Moreover, when the content of chromium Or becomes 6% by weight or more, the coefficient of thermal expansion becomes 80X 10-' am/
℃ or more, the difference in thermal expansion coefficient with the substrate becomes large, and A
[Misalignment is likely to occur.]
Ｆｅ−４２重量％Ｎｉ−０，５〜６重帛％Ｃｒを主成分
とする物質の熱膨張係数は０＝３００℃の温度領域で４
２〜７０Ｘ１０−’ｃｉ＋／’Ｃであり、基板（リード
フレーム）材であるＦＢ−４２％Ｎ１を主成分とする物
質の熱膨張係数４０〜６０×１０− ’ Ｃｌ１１／℃
とほぼ同様である。The coefficient of thermal expansion of a material whose main components are Fe-42wt%Ni-0.5~6wt%Cr is 4 in the temperature range of 0=300℃.
The coefficient of thermal expansion of the substrate (lead frame) material, a substance whose main component is FB-42%N1, is 40 to 60 x 10-' Cl11/°C.
It is almost the same as
第１図は、０．２５ｎ＋ｍ厚のｌ’−ｅ−４２重！■％
Ｎｉ材リードフレーム（熱膨張係数４５Ｘ１０−’Ｃｌ
１ｌ／℃）のワイヤボンディングエリアである先端から
１．２７±０．１ｖ＋＋までの部分へのＡｍ蒸着を真空
度１０− ’ Ｔｏｒｒ 、基板（リードフレーム）温
度３００℃の条件下で、Ｆｅ−４２重量％Ｎｉ−１重量
％Ｃｒベース材（熱膨張係数は４７×１ｏ−’ｃｍ／℃
＞をマスク材としたどきのＡ「蒸着位置の分布と、Ｆｅ
−２５％Ｃｒ系ステンレス鋼をマスク材としてＡ「蒸着
を行なった際のリードフレーム上のＡ！Ｌ蒸着位置の分
布とを示す図である。第１図から見られるように、分布
の中心は２５０ｒ系ステンレス鋼をマスク材とした場合
（図において破線で示される）も本発明の場合（図にお
いて実線で示されている）も１．２７ｍｍと同様である
が、分布のばらつぎを示す分散σはそれぞれ０．０９．
０．０５と本発明の方が小さくなっており、いわゆる”
Ａｌｊずれ”が従来に比べてはるかに生じに（くなって
いる。Figure 1 shows l'-e-42 layers with a thickness of 0.25n+m! ■%
Ni material lead frame (thermal expansion coefficient 45X10-'Cl
1L/℃) wire bonding area from the tip to 1.27±0.1V++ under the conditions of a vacuum degree of 10' Torr and a substrate (lead frame) temperature of 300℃. wt%Ni-1wt%Cr base material (thermal expansion coefficient is 47 x 1o-'cm/℃
> is used as a mask material.
- This is a diagram showing the distribution of A!L vapor deposition positions on the lead frame when A is vapor-deposited using 25% Cr stainless steel as a mask material.As can be seen from Fig. 1, the center of the distribution is Both the case where 250R stainless steel is used as the mask material (indicated by the broken line in the figure) and the case of the present invention (indicated by the solid line in the figure) are the same as 1.27 mm, but the dispersion indicating dispersion in the distribution σ is 0.09.
0.05, which is smaller in the present invention, so-called "
"Alj deviation" occurs much more frequently than in the past.
また、同一条件下でのＦｅ〜４２重量％Ｎｉベース材を
マスクとしたときのＡｕ密着による“ピン曲がり′°は
３〜４％の割合で生ずるが、本発明の場合は０％である
。Further, when a Fe-42% by weight Ni base material is used as a mask under the same conditions, "pin bending" due to close contact with Au occurs at a rate of 3 to 4%, but in the case of the present invention, it is 0%.
なお、上記実施例では、蒸発材１１としてアルミニウム
ＡＵを用いているが、これに限定されないことは言うま
でもない。Note that in the above embodiment, aluminum AU is used as the evaporation material 11, but it goes without saying that the material is not limited to this.
［効！Ｉ！］
以十のように、この発明においてはＦｅ−４２ｍ１％Ｎ
ｉベース材のリードフレームへのスポット・的に蒸着を
行なう際のマスク材と１ノで、Ｆｅ −／１．２重量％
Ｎｉ−０，５〜６ｍ１１％Ｏｒベース材を用いているの
で、蒸発月利の密着にょるパピン曲がり′″や“蒸発位
置ずれ″が従来に比較してはるかに生じにくくなってい
る。[Efficacy! I! ] As mentioned above, in this invention, Fe-42m1%N
Fe − / 1.2% by weight in combination with the mask material used for spot/target evaporation of the i-base material onto the lead frame.
Since the Ni-0.5-6m11%Or base material is used, it is much less likely that bending of the evaporator and "evaporation position shift" due to close contact with the evaporator will occur compared to the conventional method.
第１図はこの発明による蒸着用マスク材を用いた場合と
、従来のステンレス鋼蒸着用マスク材を用いた場合のＡ
ｍ蒸着位置の分布を示す図である。
第２図は真空蒸着装置の概略構成を示す図である。
第３図は蒸着用マスクの形状を示す図である。第４図は
マスク上のリードフレームの配置を示す図である。
図において、２はアルミニウム、４は基板であるリード
フレーム、５は蒸着用マスク。
なお、図中、同符号は同一または相当部を示す。Figure 1 shows A when using the vapor deposition mask material according to the present invention and when using a conventional stainless steel vapor deposition mask material.
FIG. 3 is a diagram showing the distribution of m vapor deposition positions. FIG. 2 is a diagram showing a schematic configuration of a vacuum evaporation apparatus. FIG. 3 is a diagram showing the shape of a mask for vapor deposition. FIG. 4 is a diagram showing the arrangement of lead frames on the mask. In the figure, 2 is aluminum, 4 is a lead frame which is a substrate, and 5 is a mask for vapor deposition. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.
Claims (2)
気相蒸着させる真空蒸着装置において、前記基板の所定
領域に前記蒸発材料を気相蒸着させるために用いられる
蒸着用マスク材料であって、４２重量％ニッケルと０．
５〜６重量％クロムとを含み、残部は鉄と不可避的不純
物とからなる物質から構成される、蒸着用マスク材料。(1) In a vacuum evaporation apparatus that heats an evaporation material under reduced pressure to evaporate it and vapor-phase-deposit it onto a substrate, the evaporation mask material is used to vapor-deposit the evaporation material onto a predetermined area of the substrate. 42% by weight of nickel and 0.5% by weight of nickel.
A vapor deposition mask material comprising a substance containing 5 to 6% by weight of chromium, with the balance consisting of iron and inevitable impurities.
と不可避的不純物とからなる物質からなる、特許請求の
範囲第１項記載の蒸着用マスク材料。(2) The vapor deposition mask material according to claim 1, wherein the substrate contains 42% by weight of nickel, with the remainder consisting of iron and unavoidable impurities.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20668084A JPS6184366A (en) | 1984-10-01 | 1984-10-01 | Mask material for vapor deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20668084A JPS6184366A (en) | 1984-10-01 | 1984-10-01 | Mask material for vapor deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6184366A true JPS6184366A (en) | 1986-04-28 |
Family
ID=16527329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20668084A Pending JPS6184366A (en) | 1984-10-01 | 1984-10-01 | Mask material for vapor deposition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6184366A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6821561B2 (en) * | 2002-03-26 | 2004-11-23 | Analog Devices, Inc. | Method for thin film deposition matching rate of expansion of shadow mask to rate of expansion of substrate |
| EP1630256A1 (en) * | 2004-07-30 | 2006-03-01 | United Technologies Corporation | Non-stick masking fixtures and methods of preparing same |
| JP2006134664A (en) * | 2004-11-04 | 2006-05-25 | National Institute For Materials Science | Apparatus for local coating of high quantum efficiency material on cathode tip of photocathode type electron beam source |
-
1984
- 1984-10-01 JP JP20668084A patent/JPS6184366A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6821561B2 (en) * | 2002-03-26 | 2004-11-23 | Analog Devices, Inc. | Method for thin film deposition matching rate of expansion of shadow mask to rate of expansion of substrate |
| EP1630256A1 (en) * | 2004-07-30 | 2006-03-01 | United Technologies Corporation | Non-stick masking fixtures and methods of preparing same |
| US8349086B2 (en) | 2004-07-30 | 2013-01-08 | United Technologies Corporation | Non-stick masking fixtures and methods of preparing same |
| US8603582B2 (en) | 2004-07-30 | 2013-12-10 | United Technologies Corporation | Non-stick masking fixtures and methods of preparing same |
| JP2006134664A (en) * | 2004-11-04 | 2006-05-25 | National Institute For Materials Science | Apparatus for local coating of high quantum efficiency material on cathode tip of photocathode type electron beam source |
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