JPS6184512A - Measuring method of two-layer plating - Google Patents
Measuring method of two-layer platingInfo
- Publication number
- JPS6184512A JPS6184512A JP20757984A JP20757984A JPS6184512A JP S6184512 A JPS6184512 A JP S6184512A JP 20757984 A JP20757984 A JP 20757984A JP 20757984 A JP20757984 A JP 20757984A JP S6184512 A JPS6184512 A JP S6184512A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- thickness
- fluorescent
- plating
- ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
【発明の詳細な説明】
a、産業上の利用分野
本発明はケイ光X線を用いた幌4計に関し、特に二層メ
ッキ試料の中間メッキ厚測定に関するものである。DETAILED DESCRIPTION OF THE INVENTION a. Field of Industrial Application The present invention relates to a canopy meter using fluorescent X-rays, and in particular to measuring the intermediate plating thickness of a two-layer plating sample.
b、従来技術
従来、二層メッキ試料の中間メッキ厚の測定は、素材金
属をA1中間メッキ金属′t−B1表面メッキ金属をC
とすると、中間メッキ金属Bから発生するケイ光xI確
強度と中間メッキ厚との関係を示す検量線の方程式(1
)式は仄の通シである。b. Prior art Conventionally, the intermediate plating thickness of a two-layer plating sample was measured using the following methods: A1 intermediate plating metal 't - B1 surface plating metal C
Then, the equation of the calibration curve (1
) expression is a shorthand.
より−((よりoo−より0)−(1−exp(−μ5
−Xs)))・exp(−μ′・XC)+1OCX O
) −・・・−・−・[11ここで、工o(xc)は
金属Cの厚さ変化にともなう金dBのケイ元X線強度の
バック・グラウンドの補正を示す関数であ#)+21式
で示される。From -((from oo-from 0)-(1-exp(-μ5
-Xs)))・exp(-μ′・XC)+1OCX O
) −・・・−・−・[11 Here, xo(xc) is a function indicating the background correction of the silicon element X-ray intensity in dB of gold due to the change in the thickness of the metal C) +21 It is shown by the formula.
工0(XA)=(工ooo−工o ) (1−exp(
−tto 40 ) )+10 ・121より’ =(
よりoo−工no)(1−6zp(−μ34g))十よ
りO・−−−i31ここで、(1)式中のXBは中間メ
ッキ金属Bの厚さであり、より00はケイ光X線が飽和
するに十分な厚さく以後、飽和厚と呼ぶ)をもった金属
Bのケイ光X t9強度であり、 よりOは全属人t−
測定した際の金属B(7)X線強度(バックグラウンド
)でありμBは金属Bのケイ光X線に対する金属Bの吸
収係数であり(3)式1り計算される。足e 工”0+
よりO。0(XA)=(koooo-koo) (1-exp(
-tto 40 ) )+10 ・From 121' =(
From oo-techno) (1-6zp (-μ34g)) from 10 to O---i31 Here, XB in formula (1) is the thickness of the intermediate plating metal B, and 00 is the fluorescent X is the fluorescence X t9 intensity of metal B whose thickness is sufficient for the line to be saturated (hereinafter referred to as the saturated thickness), and then O is the total metal t-
It is the X-ray intensity (background) of metal B (7) at the time of measurement, and μB is the absorption coefficient of metal B for fluorescent X-rays, which is calculated using Equation (3) 1. Foot e work”0+
More O.
μBは厚さの各々異なる5個以上の純粋の金属Bの厚さ
を有する金属A上の金属B標準試料(以後、A上のBm
準試料と呼ぶ。)のケイ元X線強度より′を測定し、そ
の強度を(3)式に代入し連立方程式を解くことによっ
て求める。μB is a standard sample of metal B on metal A having five or more pure metals B with different thicknesses (hereinafter, Bm on A)
It is called a quasi-sample. ) is determined by measuring the x-ray intensity, substituting the intensity into equation (3), and solving the simultaneous equations.
μ′は金属Bのケイ光X線に対する金属Cの吸収係Oで
あり、厚さの各々異なる5個以上の純粋の金属Cの厚さ
を有する金属B上の金属Ca準試料(以後、B上のC標
準試料と呼ぶ。)のケイ元X線強度を測定し、その強度
を(1)式に代入することにニジ求められる。(1)式
中の工0(XO)は金属Cの厚さ変化にともなう金属B
のケイ光X線強度のバックグラウンドであり金属Cのメ
ッキ厚みXOの関数である。工ooo 、 工0はA上
のaSS試料の厚さが各々、0と飽和厚みに対応する金
属Bの螢光X@強度であり、μOは金属Bのケイ元X線
強度の減衰を表わす係数であシ、厚さの各々異なる3個
以上のA上のC標準試料の金属Bのケイ光X線強度を測
足し、その強! ’k +21式に代入し、連立方程式
を解くことに工って求める。μ' is the absorption coefficient O of metal C for fluorescent X-rays of metal B, and metal Ca quasi-sample (hereinafter referred to as B This can be determined by measuring the silicon element X-ray intensity of the above C standard sample) and substituting that intensity into equation (1). (1) In the formula, 0 (XO) is the metal B due to the change in the thickness of metal C.
It is the background of the fluorescent X-ray intensity of , and is a function of the plating thickness of metal C, XO. koooo, ko0 are the fluorescence X @ intensity of metal B corresponding to the thickness of the aSS sample on A is 0 and the saturated thickness, respectively, and μO is the coefficient representing the attenuation of the silicon element X-ray intensity of metal B. Then, measure the fluorescent X-ray intensity of metal B of three or more standard samples of C on A with different thicknesses, and check the intensity! 'k + Substituting into the formula 21, it is obtained by solving the simultaneous equations.
以上の工うにして決定した(11式及び(2)式の各パ
ラメータ全周いて、金MA上の金属B上の金属C二層メ
ッキ試料の金属Bのケイ光X@強度を測定し%(1)式
から中間メッキ金属Bのメッキ厚みを求めていた。The fluorescence X@ intensity of metal B of the metal C double layer plating sample on metal B on gold MA was measured using the parameters determined in the above manner (Equation 11 and Equation (2)). The plating thickness of intermediate plating metal B was determined from equation (1).
C1本発明が解決し二うとする問題点
中間メッキの金属Bのケイ光Xiは表面メッキである金
属CK工って減衰するため信号取分は小さなものとなる
。工ってノイズに相当するバックグラウンドを正確に求
めることが正確な中間メッキ厚を求めるためには必要だ
が、従来の金属Bのケイ光X線強度のバックグラウンド
の補正を示す関fl 工0(XA)は単調増加又は単調
減少を示す指僻関数であるが、金属A、B、Cの組甘せ
により金属Bのケイ光X線強度が単調な増加又は減少を
示さない事が多い。この例を表1に示す。(Cu上のN
i上のAu二層メッキの例におけるA上のC標準試料の
場合)
表1. 金属C厚による金)I14Bケイ光X@強度パ
ックグラウンド変化
表1の場合、表面Au厚が増すにつれバックグラウンド
が減少から増加へと変化しており、従来の(2)式では
パンクグラウンドを正しく補正できないため積度の高い
中間メッキ(金属B)厚の測定ができなかった。C1 Problems to be Solved by the Present Invention Since the fluorescence Xi of the intermediate plating metal B is attenuated by the surface plating metal CK, the signal fraction becomes small. In order to obtain an accurate intermediate plating thickness, it is necessary to accurately determine the background corresponding to noise by using a conventional method, but the conventional method for correcting the background of the fluorescent X-ray intensity of metal B is XA) is an index function that shows a monotonous increase or decrease, but due to the combination of metals A, B, and C, the fluorescence X-ray intensity of metal B often does not show a monotonous increase or decrease. An example of this is shown in Table 1. (N on Cu
In the case of the C standard sample on A in the example of Au double-layer plating on i) Table 1. Changes in gold) I14B fluorescence Since it could not be corrected, it was not possible to measure the thickness of the intermediate plating (metal B), which had a high accumulation.
d1問題点を解決するための手段
従来の問題点を解決するtめ、各々厚みの異なる4個以
上のA上のC標準試料の金属Bのケイ元x6強度(バッ
クグラウンド)を測定し、その変化tを(4)式のバッ
クグラウンドの補正式l0(XO)で表わす。又、検量
線の方程式(1)式を(5)式へ改良する。d1 Means for solving the problem In order to solve the conventional problem, measure the silica element x6 intensity (background) of metal B of four or more C standard samples on A each having different thickness, and The change t is expressed by the background correction formula l0(XO) of formula (4). Also, the equation (1) of the calibration curve is improved to equation (5).
Io’(Xc)=工o−e−μ+”’+Ioae・(1
−e−μ2°x0)−14)より=〔(より一一より0
)−41−exp(−uB−XB)):l’eXp(−
μ’ Xa )+10’ (XC)−(51ここで、(
4)式中の工0及び工0(1)は(2)式中の工O及び
工Qooと同じであり、μ、及びμ、は0.艮を示す係
数であり(4)式に各データを代入し、連立方程式を解
くことに工って求める。金属Cの厚み変化によるバック
グラウンドが単調に減少又V′i逓カロする場合はμm
=μ、とする。Io'(Xc)=ko-e-μ+"'+Ioae・(1
-e-μ2°x0)-14) = [(11 than 0
)-41-exp(-uB-XB)):l'eXp(-
μ' Xa ) + 10' (XC) - (51 where, (
4) The 0 and 0 (1) in the formula are the same as the 0 and Qoo in the formula (2), and μ and μ are 0. This is a coefficient that indicates the change in the coefficient, and is obtained by substituting each data into equation (4) and solving simultaneous equations. If the background due to thickness change of metal C monotonically decreases or V′i increases, μm
= μ.
00作用
A上のC標準試料の金属Cの厚さの変化による金属Bの
ケイ光X線強度(バックグラウンド)の変化を(4)式
の工うに改良することにより、正確々バックグラウンド
を求める事ができる。表1中のデータからAu厚Oμ属
、1.6μm、4.0μm、飽和厚の4点をとシだし、
(4)式に代入し、連立させてμ7.μwe求め、その
結果工す、他のAu厚に対応するNi 7.線強度を計
算した結果を表2に示す。Accurately determine the background by improving the process of formula (4) to change the fluorescence X-ray intensity (background) of metal B due to the change in the thickness of metal C of the C standard sample on 00 action A. I can do things. From the data in Table 1, we selected four points: Au thickness Oμ, 1.6 μm, 4.0 μm, and saturated thickness.
Substitute into equation (4) and make it simultaneous μ7. Determine μwe and process the result for Ni corresponding to other Au thicknesses 7. Table 2 shows the results of calculating the line strength.
表2. (41式によるバックグラウンド計算値以上
の工うな精度を示す本発明による(4)式と従来の(2
)式を用いた二ノーメッキ(Cu上のN1メッキ上のA
uメッキ)中の中間メッキ厚測足梢度を表3に示します
。Table 2. (4) according to the present invention and the conventional (2
) formula for Ni-no plating (A on N1 plating on Cu)
Table 3 shows the intermediate plating thickness measurements during U plating).
表五 中間メッキ厚測定精度
(Cu上のN1メッキ上のAuメッキ)金属C厚の変化
によるバック・グラウンドの変化を新規な(4)式を用
いると表5に示す工うに精度の高い二層メッキ測定が可
能です。Table 5 Intermediate plating thickness measurement accuracy (Au plating on N1 plating on Cu) Using the new formula (4) to calculate background changes due to changes in metal C thickness, two layers with high accuracy are shown in Table 5. Plating measurement is possible.
f、実施例
以下図面と共に本発明による膜厚測定法について詳細t
−説明する。図面は本発明に関わる厚み測定装置i1に
示し、図中符号1で示されるものはX線源であり、X線
源1から照射された一次X線5はコリメータ2を通って
試料4に照射される。符号7は試料から発生する二次X
線(ケイ光X線)6を検出する放射線検出器、8は検出
器7の信号を増幅する@買増幅器、9は増幅器8の出力
を線型にする之めの主増幅器、10は増幅器9の出力か
ら波高分析する波高弁別器、11は波高弁別器10から
の出力を演算するCPU112はcpallの出力を表
示するための表示部である。f, Details of the film thickness measurement method according to the present invention along with the drawings below
-Explain. The drawing shows a thickness measuring device i1 related to the present invention, and the reference numeral 1 in the drawing is an X-ray source, and the primary X-ray 5 irradiated from the X-ray source 1 passes through a collimator 2 and irradiates the sample 4. be done. Code 7 is the secondary X generated from the sample.
8 is an amplifier that amplifies the signal from the detector 7; 9 is a main amplifier for making the output of the amplifier 8 linear; 10 is a main amplifier for the purpose of linearizing the output of the amplifier 9; A pulse height discriminator 11 analyzes the pulse height from the output, and a CPU 112 that calculates the output from the pulse height discriminator 10 is a display unit for displaying the output of cpall.
次に以上の工うな構成に訃ける発明による膜厚測定装置
を作動させる場合について述べる。各々厚さの異なる5
個以上のA上のB標準試料の金属Bのケイ元X線強度よ
り′を測定し、(3)式に代入し、連立方程式を解くこ
とにエリエ3on、よりO、μBを求める。仄に各々厚
さの異なる4個以上のA上のC標準試料の金属Bのケイ
元X線強度工o’(Xo)を測定し、(4)式に代入し
、連立方程式を解くことにより、工0.工0■2μm、
μtを求める。仄に各々厚さの異なる5個以上のB上の
C標準試料の金属Bのケイ元X線強度よりを測定し、(
5)式に代入し、因子μ′を求める。Next, a case will be described in which the film thickness measuring device according to the invention having the above-mentioned construction is operated. 5 each with different thickness
From the silicon element X-ray intensity of metal B of B standard samples on A or more, ' is measured, and by substituting it into equation (3) and solving the simultaneous equations, O and μB are obtained from Elie 3on. By measuring the silicon element X-ray intensity o' (Xo) of metal B of C standard samples on four or more A with slightly different thicknesses, and substituting it into equation (4) and solving the simultaneous equations, , engineering 0. 0.2μm,
Find μt. Measure the silicon element X-ray intensity of metal B on five or more C standard samples on B with slightly different thicknesses, and (
5) Substitute into the equation to find the factor μ'.
より−〔(工]3ao−工no)(1−ecp(−μn
−Xa)l)−6zp(−4’Xc)+IO’(XO)
−(51この工うにして前記方程式中の因子を決定し
、未知二)−メッキ試料の中間金属Bからのケイ光X線
強度を測定することに工って、表面メッキ厚xOを公知
の方法で測定後、中間メッキ厚XBを精度工く測定でき
る。From - [(engineering] 3ao-engineering no) (1-ecp (-μn
-Xa)l)-6zp(-4'Xc)+IO'(XO)
- (51) In this way, the factors in the above equation are determined, and the surface plating thickness xO is determined by measuring the fluorescent X-ray intensity from the intermediate metal B of the plated sample. After measuring with this method, the intermediate plating thickness XB can be measured with high precision.
g0本発明の効果
本発明によるニノーメッキ厚さ測定法は以上の:うに、
表面金属C厚XOKよる中間金属Bのバックグラウンド
の変化を適切に補正しているので中間メッキ厚XBを棺
度工く測定できる効果をもつ。g0 Effect of the present invention The method for measuring the thickness of Nino plating according to the present invention is as follows: sea urchin,
Since the change in the background of the intermediate metal B due to the thickness XOK of the surface metal C is appropriately corrected, it is possible to accurately measure the intermediate plating thickness XB.
図面は本発明の一実施例に関わる装置のブロック図であ
る。
1・・・X線源
2・・・コリメータ
6・・・−仄X#
4・・・試料
5・・・試料台
6・・・二次X線
7・・・放射線検出器
8・・・前置増幅器
9・・・主増幅器
10・・・波高弁別器
11 ・・・ OF σ
12・・・表示部
以 上The drawing is a block diagram of an apparatus related to an embodiment of the present invention. 1... X-ray source 2... Collimator 6...-X# 4... Sample 5... Sample stage 6... Secondary X-ray 7... Radiation detector 8... Preamplifier 9... Main amplifier 10... Wave height discriminator 11... OF σ 12... Above the display section
Claims (1)
れた試料から発生するケイ光X線を検出することによつ
て、素材上の中間膜上の表面膜の二層メッキにおける中
間膜の厚さを測定する方法において、中間幅から発生す
るケイ光X線強度をX線検出器で検出する工程と、厚さ
の各々異なる3個以上の純粋の中間金属の厚さを有する
素材上の中間金属のケイ光X線強度を測定する工程と、
厚さの各々異なる3個以上の純粋の表面金属の厚さを有
する中間金属上の表面金属のケイ光X線強度を測定する
工程と、厚さの各々異なる4個以上の純粋の表面金属の
厚さを有する素材上の表面金属のバックグラウンドケイ
光X線強度(金属Bケイ光X線強度)を測定し検量線の
方程式を決定する工程と、未知試料中の中間金属から放
射されるケイ光X線強度を測定することにより、表面金
属の膜厚より正確なバックグラウンドの補正をする工程
と、中間膜厚を求める工程とによつて演算測定すること
を特徴とする二層メッキの測定方法。By detecting the fluorescent X-rays generated from the sample excited by the primary X-rays from the X-ray source installed in the main body, A method for measuring the thickness of a film, including the step of detecting fluorescent X-ray intensity generated from an intermediate width with an X-ray detector, and a material having three or more pure intermediate metals each having a different thickness. measuring the fluorescent X-ray intensity of the intermediate metal above;
A step of measuring the fluorescent X-ray intensity of a surface metal on an intermediate metal having three or more pure surface metals each having a different thickness; The process of measuring the background fluorescent X-ray intensity (metal B fluorescent X-ray intensity) of the surface metal on a thick material and determining the equation of the calibration curve, and the process of determining the equation of the calibration curve, and the process of measuring the background fluorescent Measurement of double-layer plating characterized by performing calculation measurement through a process of correcting the background more accurately than the film thickness of the surface metal by measuring the optical X-ray intensity, and a process of calculating the intermediate film thickness. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20757984A JPS6184512A (en) | 1984-10-03 | 1984-10-03 | Measuring method of two-layer plating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20757984A JPS6184512A (en) | 1984-10-03 | 1984-10-03 | Measuring method of two-layer plating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6184512A true JPS6184512A (en) | 1986-04-30 |
| JPH0371046B2 JPH0371046B2 (en) | 1991-11-11 |
Family
ID=16542090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20757984A Granted JPS6184512A (en) | 1984-10-03 | 1984-10-03 | Measuring method of two-layer plating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6184512A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100887065B1 (en) | 2006-12-27 | 2009-03-04 | 주식회사 포스코 | Joint Overlap Measurement Device |
-
1984
- 1984-10-03 JP JP20757984A patent/JPS6184512A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100887065B1 (en) | 2006-12-27 | 2009-03-04 | 주식회사 포스코 | Joint Overlap Measurement Device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0371046B2 (en) | 1991-11-11 |
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