JPS6184862A - Manufacturing method of photoelectric conversion device - Google Patents
Manufacturing method of photoelectric conversion deviceInfo
- Publication number
- JPS6184862A JPS6184862A JP59207348A JP20734884A JPS6184862A JP S6184862 A JPS6184862 A JP S6184862A JP 59207348 A JP59207348 A JP 59207348A JP 20734884 A JP20734884 A JP 20734884A JP S6184862 A JPS6184862 A JP S6184862A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- light
- conversion device
- conversion element
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
- Light Receiving Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、ファクシミリの送信側に用いる原稿幅と１：
１の大きさを有する光電変換装置の構造に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to the width of a document used on the sending side of a facsimile.
The present invention relates to the structure of a photoelectric conversion device having a size of 1.
従来例の構成とその問題点
近年、ファクシミリ等の読み取り系の光電変換装置とし
て、原稿幅と１＝１の大きさを有する装置が活発に開発
されている。Conventional Structures and Their Problems In recent years, devices having a size of 1=1 with the document width have been actively developed as photoelectric conversion devices for reading systems such as facsimiles.
以下に従来の光電変換装置について説明する。A conventional photoelectric conversion device will be explained below.
第１図は従来の光電変換装置の断面図である。FIG. 1 is a sectional view of a conventional photoelectric conversion device.
第１図において、ガラス等の透光性絶縁基板１上に、Ｃ
ｒ、Ｔａ、Ｗ、Ｔｉ等の高融点で不透明な物質を蒸着法
等で少なくとも光電変換素子６の所には存在する様に被
着し遮光層２とする。ａ光層２にフォトリソ法等で照明
窓３を形成し、スパッタリング法等で遮光層２と光電変
換素子らとの絶縁を保つために透光性絶縁層４を被着し
、その上部に光導電性薄膜を蒸着法等で被着後、フォ）
ｌ／ノン法主走査方向に島状に並ぶ光電変換素子５を
形成する。さらに光電変換素子Ｓを５００〜６００℃の
活性化熱処理又は、高温処理後、第１図では省略しであ
るが第２図の−Ｆ−回図に示す様に、複数個の光電変換
素子６に接続される共通電極６と各光電変換素子６に対
応する個別電極７を光電変換素子５で対向して形成し、
さらに薄板ガラス等の透明保護層８を形成した構造で、
照明窓３を通って入射する光１０の原稿面９の散乱光１
１を光電変換素子５で電気信号に変換する構成である。In FIG. 1, C
An opaque substance with a high melting point such as r, Ta, W, or Ti is deposited by vapor deposition or the like so as to be present at least on the photoelectric conversion element 6 to form the light shielding layer 2. a. An illumination window 3 is formed on the optical layer 2 by a photolithography method or the like, and a transparent insulating layer 4 is deposited by a sputtering method or the like to maintain insulation between the light shielding layer 2 and the photoelectric conversion elements. After depositing a conductive thin film by vapor deposition method, etc.
Photoelectric conversion elements 5 arranged in an island shape in the l/non-method main scanning direction are formed. Further, after the photoelectric conversion element S is subjected to activation heat treatment at 500 to 600°C or high temperature treatment, a plurality of photoelectric conversion elements 6 are A common electrode 6 connected to the photoelectric conversion element 5 and individual electrodes 7 corresponding to each photoelectric conversion element 6 are formed facing each other in the photoelectric conversion element 5,
Furthermore, with a structure in which a transparent protective layer 8 such as thin plate glass is formed,
Scattered light 1 of light 10 incident on the document surface 9 through the illumination window 3
1 is converted into an electrical signal by a photoelectric conversion element 5.
しかしながら、上記の従来の構成では、透光性絶縁層４
と光電変換素子５との膨張係数と合せるために、例えば
Ｃｄ５−ＣｄＳｅ等のｎ−ｖｔ族化合物の光電変換素子
６の場合、透光性絶縁層４として例えばコーニング７０
６９等の低軟化点ガラスを用いる必要があり、遮光層２
の物質が透光性絶縁層４中に拡散し、絶縁性の低下や光
電変換素子Ｓ中へ不純物としてド−グされるため、光電
変換素子５の特性バラツキ、感度の劣化を招き生産性が
低下するという問題点を有していた。However, in the above conventional configuration, the transparent insulating layer 4
In order to match the expansion coefficients of the photoelectric conversion element 5 and the photoelectric conversion element 5, for example, in the case of the photoelectric conversion element 6 made of an n-vt group compound such as Cd5-CdSe, for example, Corning 70 is used as the light-transmitting insulating layer 4.
It is necessary to use low softening point glass such as 69, and the light shielding layer 2
This substance diffuses into the transparent insulating layer 4 and degrades the insulation and is doped into the photoelectric conversion element S as an impurity, causing variations in the characteristics of the photoelectric conversion element 5 and deterioration of sensitivity, resulting in reduced productivity. However, there was a problem in that it decreased.
発明の目的
本発明は上記従来の問題点を解決するもので、遮光層を
構成する物質の拡散を防止し、特性のバラツキを抑え、
生産性を向上させることができる原稿幅と１＝１に対応
した大きさを有する光電変換装置を提供することを目的
とする。OBJECT OF THE INVENTION The present invention solves the above-mentioned conventional problems by preventing the diffusion of the substance constituting the light-shielding layer, suppressing the variation in characteristics,
It is an object of the present invention to provide a photoelectric conversion device having a size corresponding to the document width and 1=1, which can improve productivity.
発明の構成
本発明は、透光性絶縁基板上に、照明窓を有する遮光層
と、前記遮光層上に設けた酸化膜と、透光性絶縁層と、
光電変換素子と、対向電極と、透明保護層とを順次積層
した構成の光電変換装置であり、拡散防止層とＣｕを含
有した透光性絶縁層により、バラツキの少なく特性が安
定し、及び生産性を向上させる事のできるものである。Structure of the Invention The present invention provides a light-shielding layer having an illumination window on a light-transmitting insulating substrate, an oxide film provided on the light-shielding layer, a light-transmitting insulating layer,
It is a photoelectric conversion device that has a structure in which a photoelectric conversion element, a counter electrode, and a transparent protective layer are sequentially laminated.The anti-diffusion layer and the transparent insulating layer containing Cu ensure stable characteristics with little variation and easy production. It is something that can improve your sexuality.
実施例の説明
以下に本発明における光電変換装置の構成を実施例を用
いて詳細に説明する。DESCRIPTION OF EMBODIMENTS The configuration of a photoelectric conversion device according to the present invention will be explained in detail below using embodiments.
第３図に本発明の実施例における光電変換装置の断面図
を示す。FIG. 3 shows a cross-sectional view of a photoelectric conversion device according to an embodiment of the present invention.
第３図において、ガラス等の透光性絶縁基板１上に、高
融点材料であるＣｒ、Ｔａ、Ｗ、Ｔｉ等を少なくとも可
視光を遮光する様に８００〜４０００人の膜厚で遮光層
２として形成し、さらに遮光層２に透光性絶縁基板１裏
面からの光源の光を入射させる照明窓３をフォトリソ法
等で形成する。次に遮光層２を熱酸化等をさせる事によ
り遮光層２の酸化膜例えばＣｒ２Ｏ３，Ｔａ２０５等を
拡散防止層１２としてＳＯＯ〜２０００人形成する。ざ
らにスパッタリング法等で、Ｃｄ５−ＣｄＳｅ等の■−
■族化合物と膨張係数が一致するコーニング７０６９等
およびＣｕを１０−２〜１０−’ ｍｏ１％含有し可視
光を通すため（てバンドギャップが３ｅＶ以上の透光性
絶縁層４′を５ｏ○〜１００００人形成する。In FIG. 3, a light-shielding layer 2 made of a high-melting point material such as Cr, Ta, W, Ti, etc. is formed on a light-transmitting insulating substrate 1 made of glass or the like to a thickness of 800 to 4000 to block at least visible light. Furthermore, an illumination window 3 for allowing light from a light source from the back surface of the transparent insulating substrate 1 to be incident on the light-shielding layer 2 is formed by photolithography or the like. Next, the light shielding layer 2 is thermally oxidized to form an oxide film such as Cr2O3, Ta205, etc., as the diffusion prevention layer 12. ■- of Cd5-CdSe etc. by rough sputtering method etc.
In order to transmit visible light by containing Corning 7069 etc. whose expansion coefficient matches that of the group compound and 10-2 to 10-' mo1% of Cu (so that the light-transmitting insulating layer 4' with a band gap of 3 eV or more is Form 10,000 people.
次に、Ｃｄ５−ＣｄＳｅ等のｎ−■族化合物を、蒸着法
等で被着し、ホトリノ法で主走査方向に並び照明窓３と
平行に島状の光電変換素子６を形成し、ＳＯＯ〜６００
℃の活性化熱処理により、ドナーとアクセプターとにＣ
ｕとＣｔを導入し、さらに各光′電変換素子５に対応し
て、従来例の２図に示す様に、複数個まとめた共通電極
６と個別電極７を、例えば、Ｎ ｉ Ｃｒ−Ａｕ等をリ
フトオフ法で形成し、最後に薄板ガラスの貼り付は又は
スパッタリング法等で５ｌＯ２，５１３Ｎ４等の透明保
護層８を積層して作成する。Next, an n-■ group compound such as Cd5-CdSe is deposited by a vapor deposition method or the like, and island-shaped photoelectric conversion elements 6 are formed in the main scanning direction and parallel to the illumination window 3 by a photolithography method. 600
Activation heat treatment at ℃ causes C to donor and acceptor.
u and Ct, and furthermore, corresponding to each photoelectric conversion element 5, as shown in FIG. etc. are formed by a lift-off method, and finally, a thin plate glass is attached by laminating a transparent protective layer 8 of 51O2, 513N4, etc. by a sputtering method or the like.
かかる構造の光電変換装置で、基板１裏面から照明窓３
に入射する光１０を原稿９で反射し、その散乱光１１を
光電変換素子５で電気信号に変換するものである。In the photoelectric conversion device having such a structure, the illumination window 3 is connected from the back side of the substrate 1.
The light 10 incident on the document 9 is reflected by the original 9, and the scattered light 11 is converted into an electrical signal by the photoelectric conversion element 5.
以上のように本実施例によれば、遮光層２上に拡散防止
層１２を形成する事により、遮光層２材料の光電変換素
子５中への拡散がないので、特性のバラツキが非常に小
さく、さらに遮光層２自身の酸化膜であるため、照明窓
３で入射光が、例えば透光性絶縁基板１と透光性絶縁層
４が同一物質で形成すれば、界面での反射を生じないの
で、光の利用効率を高める事ができる。As described above, according to this embodiment, by forming the anti-diffusion layer 12 on the light-shielding layer 2, there is no diffusion of the material of the light-shielding layer 2 into the photoelectric conversion element 5, so variations in characteristics are extremely small. Furthermore, since the light-shielding layer 2 is an oxide film, the light incident on the illumination window 3 will not be reflected at the interface, for example, if the light-transmitting insulating substrate 1 and the light-transmitting insulating layer 4 are formed of the same material. Therefore, the efficiency of light use can be increased.
また、透光性絶縁層４′の中に、スパッタのターゲツト
材中Ｋｃｕをたとえば１０−２〜１０−’ ｍｏ １％
含有させて、スパッタリングを行い、Ｃｕを含有する透
光性絶縁層４′を形成する事により、例えばＣｄ５−Ｃ
ｄＳｅ等ではＣｕはドナーとして働くので、５Ｑ○〜６
００℃の活性化熱処理中に光電変換素子６中へのＣｕの
微量ドープの制御が可能となり、蒸着膜中にＣｕを導入
するのに比べて、容易にしかも均一に導入されるため特
性のバラツキが抑えられ、また望んだ特性に調節できる
利点があり応用上、非常に好ましい。Further, in the light-transmitting insulating layer 4', Kcu in the sputtering target material is, for example, 10-2 to 10-'mo 1%.
By performing sputtering to form a transparent insulating layer 4' containing Cu, for example, Cd5-C
In dSe etc., Cu acts as a donor, so 5Q○~6
It becomes possible to control the doping of a small amount of Cu into the photoelectric conversion element 6 during the activation heat treatment at 00°C, and compared to introducing Cu into a vapor-deposited film, Cu is introduced more easily and uniformly, reducing variations in characteristics. It has the advantage of being able to suppress the effects and adjust the characteristics to desired properties, and is therefore very desirable in terms of applications.
なお、本実施例において、光電変換素子５を■−■族化
合物としたが、光電変換素子５はａ −５ｉ等でも同様
の効果かえられるがその際、透光性絶縁層８中にＣｕを
含有させる必要はない。In this example, the photoelectric conversion element 5 is made of a ■-■ group compound, but the same effect can be obtained by using a-5i etc. for the photoelectric conversion element 5. There is no need to include it.
発明の効果
本発明は、遮光層と透光性絶縁層との間に遮光層物質の
拡散防止のための酸化膜を設ける事により光電変換素子
に遮光層物質が導入されないので、素子特性が安定し、
歩留りが著しく向上し、さらに透光性絶縁層中に望まし
くは１０−２〜１０−’ｍｏｌ多のＣｕを含有させる事
により、特性の均−化及び、特性の調節が容易にはかれ
、バラツキの減少に大きく寄与し生産性が向上するとい
う効果を得る事ができる優れた光電変換装置を実現でき
るものである。Effects of the Invention In the present invention, by providing an oxide film between the light-shielding layer and the light-transmitting insulating layer to prevent diffusion of the light-shielding layer material, the light-shielding material is not introduced into the photoelectric conversion element, so device characteristics are stabilized. death,
The yield is significantly improved, and by containing preferably 10-2 to 10-' mol of Cu in the transparent insulating layer, the properties can be easily equalized and adjusted, and variations can be reduced. Accordingly, it is possible to realize an excellent photoelectric conversion device that can greatly contribute to the reduction of the amount of heat and improve productivity.
第１図は従来の光電変換装置の断面図、第２図は第１図
の装置の要部概略平面図、第３図は本発明の一実施例に
おける光電変換装置の断面図である。
２・・・・・遮光層、４・・・・・透光性絶縁層、４′
・・・・・Ｃｕを含有した透光性絶縁層、５・・・・・
光電変換素子、１２・・・・・拡散防止層。FIG. 1 is a sectional view of a conventional photoelectric conversion device, FIG. 2 is a schematic plan view of essential parts of the device shown in FIG. 1, and FIG. 3 is a sectional view of a photoelectric conversion device in an embodiment of the present invention. 2... Light shielding layer, 4... Transparent insulating layer, 4'
...Transparent insulating layer containing Cu, 5...
Photoelectric conversion element, 12...Diffusion prevention layer.
Claims (3)
なくとも前記遮光層の上に形成された酸化膜と、前記酸
化膜上に形成された透光性絶縁層と、主走査方向に島状
に並んだ光電変換素子と、前記各光電変換素子に形成さ
れた対向電極と、透明保護層とを順次積層してなる事を
特徴とする光電変換装置。(1) A light-shielding layer having an illumination window on a light-transmitting insulating substrate, an oxide film formed on at least the light-shielding layer, a light-transmitting insulating layer formed on the oxide film, and a main scanning direction 1. A photoelectric conversion device comprising photoelectric conversion elements arranged in an island shape, a counter electrode formed on each of the photoelectric conversion elements, and a transparent protective layer, which are sequentially laminated.
ｏｌ％のＣｕを含有し、バンドギャップが３ｅＶ以上で
ある事を特徴とする特許請求の範囲第１項記載の光電変
換装置。(2) The translucent insulating layer is 10^-^2 to 10^-^4m
2. The photoelectric conversion device according to claim 1, which contains ol% of Cu and has a band gap of 3 eV or more.
ファスシリコンからなる事を特徴とする特許請求の範囲
第１項記載の光電変換装置。(3) The photoelectric conversion device according to claim 1, wherein the photoelectric conversion element is made of a II-VI group compound or amorphous silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59207348A JPS6184862A (en) | 1984-10-02 | 1984-10-02 | Manufacturing method of photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59207348A JPS6184862A (en) | 1984-10-02 | 1984-10-02 | Manufacturing method of photoelectric conversion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6184862A true JPS6184862A (en) | 1986-04-30 |
| JPH0564468B2 JPH0564468B2 (en) | 1993-09-14 |
Family
ID=16538246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59207348A Granted JPS6184862A (en) | 1984-10-02 | 1984-10-02 | Manufacturing method of photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6184862A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63128748A (en) * | 1986-11-19 | 1988-06-01 | Ricoh Co Ltd | Close-contact image sensor |
| US4940888A (en) * | 1988-03-14 | 1990-07-10 | Hitachi, Ltd. | Direct-contact-type image sensor and image sensor assembly |
| US5162644A (en) * | 1988-03-14 | 1992-11-10 | Hitachi, Ltd. | Contact type image sensor having photoelectric conversion elements to reduce signal variation caused by luminous intensity variation of light source |
| GB2353140A (en) * | 1999-07-19 | 2001-02-14 | Agilent Technologies Inc | Tungsten or titanium-tungsten optical barrier in dark pixel |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5840856A (en) * | 1981-09-03 | 1983-03-09 | Nippon Telegr & Teleph Corp <Ntt> | Array for photosensor |
| JPS5856363A (en) * | 1981-09-30 | 1983-04-04 | Hitachi Ltd | Light receiving element |
| JPS59151456A (en) * | 1983-02-17 | 1984-08-29 | Nec Corp | Photoelectric conversion element for hybrid integrated optical sensor and its manufacturing method |
-
1984
- 1984-10-02 JP JP59207348A patent/JPS6184862A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5840856A (en) * | 1981-09-03 | 1983-03-09 | Nippon Telegr & Teleph Corp <Ntt> | Array for photosensor |
| JPS5856363A (en) * | 1981-09-30 | 1983-04-04 | Hitachi Ltd | Light receiving element |
| JPS59151456A (en) * | 1983-02-17 | 1984-08-29 | Nec Corp | Photoelectric conversion element for hybrid integrated optical sensor and its manufacturing method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63128748A (en) * | 1986-11-19 | 1988-06-01 | Ricoh Co Ltd | Close-contact image sensor |
| US4940888A (en) * | 1988-03-14 | 1990-07-10 | Hitachi, Ltd. | Direct-contact-type image sensor and image sensor assembly |
| US4977313A (en) * | 1988-03-14 | 1990-12-11 | Hitachi, Ltd. | Facsimile equipment with direct-contact-type image sensor |
| US5162644A (en) * | 1988-03-14 | 1992-11-10 | Hitachi, Ltd. | Contact type image sensor having photoelectric conversion elements to reduce signal variation caused by luminous intensity variation of light source |
| GB2353140A (en) * | 1999-07-19 | 2001-02-14 | Agilent Technologies Inc | Tungsten or titanium-tungsten optical barrier in dark pixel |
| US6326601B1 (en) | 1999-07-19 | 2001-12-04 | Agilent Technologies, Inc. | Optical barrier |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0564468B2 (en) | 1993-09-14 |
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