JPS6186500A - Manufacture of gaalas light emitting semiconductor - Google Patents
Manufacture of gaalas light emitting semiconductorInfo
- Publication number
- JPS6186500A JPS6186500A JP59207944A JP20794484A JPS6186500A JP S6186500 A JPS6186500 A JP S6186500A JP 59207944 A JP59207944 A JP 59207944A JP 20794484 A JP20794484 A JP 20794484A JP S6186500 A JPS6186500 A JP S6186500A
- Authority
- JP
- Japan
- Prior art keywords
- type
- type layer
- solution
- slider
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 9
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 8
- 239000011701 zinc Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 6
- 239000007791 liquid phase Substances 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 238000007598 dipping method Methods 0.000 claims description 2
- 238000009489 vacuum treatment Methods 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052725 zinc Inorganic materials 0.000 abstract description 3
- 230000006837 decompression Effects 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000004453 electron probe microanalysis Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】 発光素子の製造方法の改良に関するものである。[Detailed description of the invention] The present invention relates to an improvement in a method for manufacturing a light emitting element.
近年、光通信用あるいは屋外での表示用などとして高効
率の発光素子の需要が強くなっている。In recent years, there has been a strong demand for highly efficient light emitting elements for use in optical communications or outdoor displays.
高効率発光素子の半導体材料としては、ＧａＡｌＡｓ系
の特性が最も優れていることが知られている。It is known that GaAlAs has the best characteristics as a semiconductor material for high-efficiency light emitting devices.
Ｇａ１−ｘＡ２ｘＡｓ混晶は組成ｘ ＝ ０からｘ ＝
０． ４付近まで直接遷移型のバンド構造を有し、６
５００λ〜９００り久の間で高効率の発光を得ることが
でさる・Ｇａ１−ｘＡｔｘＡＳ混晶の場合パンドギャッ
７°（Ｅｇ単泣ｅＶ）と組成（Ｘ）の関係は近似的に次
の関係式で表わさＪすることか知られている。The Ga1-xA2xAs mixed crystal has a composition from x = 0 to x =
0. It has a direct transition type band structure up to around 4, and 6
It is possible to obtain highly efficient light emission between 500λ and 900λ. In the case of Ga1-xAtxAS mixed crystal, the relationship between panned gap 7° (Eg simple eV) and composition (X) is approximately as follows: It is known that it can be expressed as J.
Ｅｇ（ｘ）＝１．４２４＋１．２４７ｘ （０＜Ｘ＜
０．４５）一般に、ＧａＡｌＡｓ発光素子はＰ型ＧａＡ
ｓ基板上に液相エピタキシャル成長により発光波長に対
応したバンドギヤツプＥｇを持つＰ型Ｇａ１−ｘＡｔｘ
Ａｓ層及びこの波長に対して透明となるようなバンドギ
ヤ、 ７’ ｓ脩（ ｒｇｉ〉ｚ４ ）の広いｎ Ｗ
Ｇａ１−ｙＡｔｙＡｓ層をＶ ＞ Ｘなる関係のもとに
順次成長させた構造となっている。Eg(x)=1.424+1.247x (0<X<
0.45) Generally, GaAlAs light emitting devices are P-type GaA
P-type Ga1-xAtx with a bandgap Eg corresponding to the emission wavelength by liquid phase epitaxial growth on the s-substrate
An As layer and a band gear that is transparent to this wavelength, a wide nW of 7' s (rgi〉z4)
It has a structure in which Ga1-yAtyAs layers are sequentially grown under the relationship of V>X.
発光はＰ型ＧａＡｌＡｓ層で起きる為、発光波長はＰ型
層のイＪ）成（Ｘ）に依存する。Since light emission occurs in the P-type GaAlAs layer, the emission wavelength depends on the iJ) composition (X) of the P-type layer.
発光波長＋３６００Ｘの典型的な赤色発光素子では組成
ｘ＝０．３５のＰ型層及び組成ｙ ＝ Ｑ、 ６〜０．
１３のＮ型層より構成されている。A typical red light emitting device with an emission wavelength of +3600X has a P-type layer with a composition x=0.35 and a composition y=Q, 6 to 0.
It is composed of 13 N-type layers.
従来技術では第１図のようなＰ型成長溶液４及びＮ型成
長溶液５の２つの溶液で構成された横型スライドホ゛−
トを用い、Ｐ型層−１Ｎ型層を徐冷法まだは温度差法に
より順次成長する方式がとられでいる。この方式の欠点
は、Ｐ型層を成長させた後、基板結晶が一旦成長溶液か
ら切シ離されること、および基板結晶をスライドするこ
とによるキズの発生などによ、！ｐｐ−Ｎ界面付近に種
々の欠陥が導入され、特性劣化及びバラツキが問題とな
ることである。一方、リン化ガリウム（ＧａＰ）緑色発
光素子の場合にもＮ層及びＰ層を各々別個の溶液から成
長させる方式よりも、１つの溶液からＮ層及びＰ層を連
続して成長させる所謂不純物補償法による発光素子の方
が発光特性が優れていることが知られている。In the prior art, a horizontal slide box composed of two solutions, a P-type growth solution 4 and an N-type growth solution 5, as shown in FIG.
A method has been adopted in which the P-type layer and the N-type layer are sequentially grown using a slow cooling method or a temperature difference method. The disadvantages of this method are that the substrate crystal is once separated from the growth solution after growing the P-type layer, and that scratches occur due to sliding of the substrate crystal. Various defects are introduced in the vicinity of the pp-N interface, causing problems such as deterioration and variation in characteristics. On the other hand, in the case of gallium phosphide (GaP) green light-emitting devices, the so-called impurity compensation method in which the N and P layers are successively grown from one solution is used, rather than growing the N and P layers from separate solutions. It is known that light-emitting elements manufactured by the method have superior light-emitting characteristics.
第１の発明は上記事実に鑑みなされたもので、亜’Ａ
（Ｚｎ ）とテルル（Ｔｅ）を同時に添加したＰ型成長
溶液からＰ型層を成長させた後、溶液中のＺｎを減圧処
理によ）除去し、さらにアルミニウムを追加１〜／こ後
Ｎ型層を同一溶液から連続して成長さぜ、■〕−Ｎ界面
付近に種々の欠陥が導入されることを防ぐことによ多安
定した特性を持つＧａＡ７Ａｓ発元素１′−の製造方法
を提供するものである。The first invention was made in view of the above facts.
After growing a P-type layer from a P-type growth solution to which (Zn) and tellurium (Te) were simultaneously added, Zn in the solution was removed (by vacuum treatment), and aluminum was added. To provide a method for producing GaA7As element 1'- which has multi-stable properties by continuously growing layers from the same solution and preventing the introduction of various defects near the -N interface. It is something.
しかしながらこの場合でもＮ型層を成長した後スライド
させることにより溶液の分離させる為に、多結晶のまき
込みによるウェハー表面のキズ、及びウェハー表面に溶
液が残留することによる表面不良などの発生が問題とな
る。また横型スライドボート法は上述した以外に下記問
題点がある。However, even in this case, since the solution is separated by sliding after growing the N-type layer, there are problems such as scratches on the wafer surface due to the inclusion of polycrystals and surface defects due to the solution remaining on the wafer surface. becomes. In addition to the above-mentioned problems, the horizontal slide boat method also has the following problems.
■ＧａＡｌＡｓ０液相エピタキシャル成長の場合、非常
に酸化され易いアルミニウムを溶液に添加している為に
、成長前に十分な空焼きにより溶液中の酸素及び成長用
治具等に吸着した酸素を十分除去しなければならない。■In the case of GaAlAs0 liquid phase epitaxial growth, since aluminum, which is very easily oxidized, is added to the solution, oxygen in the solution and oxygen adsorbed on the growth jig etc. must be sufficiently removed by thorough baking before growth. There must be.
しかしスライドボート法では溶液と基板結晶が常に同じ
温度ゾーンにちる為に溶液の空焼きの時間が余シ長くな
ると基４に結晶の熱劣化の問題が出て来る。したがって
、酸素の除去と云５観点だけで空焼き時間を独立に選択
することができない。However, in the slide boat method, since the solution and the substrate crystal are always in the same temperature zone, if the dry baking time of the solution becomes too long, the problem of thermal deterioration of the crystal will arise. Therefore, the dry baking time cannot be selected independently from the viewpoint of oxygen removal.
・：・スライドボート法で基板結晶を多数枚チャージす
る場合溝造が複離となり、操作性が悪く量産的な製造方
法としては問題がある。・：・When charging a large number of substrate crystals using the slide boat method, the groove structure becomes compound detached, resulting in poor operability and problems as a mass-produced manufacturing method.
そこで本発明の第２の発明は、上記事実に鑑みなされた
ものである。本発明者は踵々の検討の、結果縦型浸漬法
を採用することにより上述した問題の解決を計ったＧａ
ＡｌＡｓ発光素子の量産的な製造方法を提供するに至っ
たものである。Therefore, the second invention of the present invention has been made in view of the above facts. As a result of the study of the heel, the present inventor has attempted to solve the above-mentioned problem by adopting the vertical immersion method.
This has led to the provision of a method for mass-producing AlAs light emitting devices.
以下図を参照して実施例を説明する。Examples will be described below with reference to the figures.
実１強（列 １
第２図は第１の発明の実施において用いた黒鉛製スライ
ドボートを模式的に示したものである。Figure 2 schematically shows a graphite slide boat used in carrying out the first invention.
下部スライダー１にＰ型ＧａＡｓ基板３が設置され、成
長、・容液４は金属ガリウム５０ Ｆ、ＧａＡｓ多結晶
４．！７、アルミニウム（Ａｌ）８０７＋１９、亜鉛５
０ｍｇ、テルル２ ｍ９を配合した組成となっている。A P-type GaAs substrate 3 is placed on the lower slider 1 and grown. The liquid 4 is made of metallic gallium 50F and GaAs polycrystalline 4. ! 7. Aluminum (Al) 807+19, Zinc 5
The composition contains 0 mg of tellurium and 2 m9 of tellurium.
まだ上部バラ２イグー８にはＡ７（９）３００ｍ９が設
置されている。A7 (9) 300m9 is still installed in Upper Bara 2 Igu 8.
スライダーをこの状態で電気炉の均熱帯に設置し真空置
換した後、水素ガスを流しながら９００℃ｔで外心する
。９００℃で１時間保持した後スライダーｌを移動し、
基板４と成長溶液４を接融させ、に）加速度０．５℃／
分で８６０℃まで冷却しＰ型層を成長させる。この温度
で成長を一時停止し、Ａｒガスを流しながら約２ Ｔｏ
ｒｒの減圧下で約２時間保持し溶液中のＺｎを除去する
。次に常圧（で戻し再び水素ガスを流し、上部スライダ
ー３を移動しＡｔ９を溶液に追加する。追加後約１０分
間経た後、１０℃再昇温する。８７０℃で約１０分間保
持した後、再び冷却速度０．５℃／分で８３０℃まで徐
令し、Ｎ型層を成長させ８３０℃に達した時スライダー
１を移動し、成長溶液を分離する。この工僅により、約
２０μｍＬニア）Ｐ型層、及び約２０μｍのＮ型層が成
長した。ＥＰＭＡによる組成分析の結果Ｐ型層はＧａｎ
、６６ＡｔＱ、３４Ａｓ 、、Ｎ層はＧａＯ，４２Ａｔ
０．５８ＡＳであった。The slider was placed in this state in the soaking zone of an electric furnace, and after vacuum displacement, it was circumcentered at 900°C while flowing hydrogen gas. After keeping it at 900℃ for 1 hour, move the slider l,
The substrate 4 and the growth solution 4 are melted, and the acceleration is 0.5°C/
Cool to 860° C. for 1 minute to grow a P-type layer. Growth was temporarily stopped at this temperature, and the growth was continued at approximately 2 To
The solution is maintained under reduced pressure of rr for about 2 hours to remove Zn from the solution. Next, return to normal pressure (at normal pressure), flow hydrogen gas again, move the upper slider 3, and add At9 to the solution. After about 10 minutes after addition, raise the temperature again by 10°C. After holding at 870°C for about 10 minutes, Then, the cooling rate is again reduced to 830°C at a cooling rate of 0.5°C/min, an N-type layer is grown, and when the temperature reaches 830°C, the slider 1 is moved to separate the growth solution. ) P-type layer and about 20 μm N-type layer were grown. As a result of compositional analysis by EPMA, the P-type layer is Gan.
, 66AtQ, 34As, , N layer is GaO, 42At
It was 0.58AS.
イ４）られだ発光素子の発光波長は６６５０Ｘ発光出力
はＰ型層及びＮ型層を別個の溶液から成長させたもの約
１．５倍であった。b4) The light emitting wavelength of the light emitting element was 6650X.The light emitting output was about 1.5 times that of the P-type layer and N-type layer grown from separate solutions.
丑記例で（−、Ｌ減圧処理時間を２時間としたが、１時
間の場合はＺｎの除去が不十分でＮ型層が得られない場
合があ）２時間以上の場合はＮ型層が再現良く得られた
。In the example above, (-, L decompression treatment time was set to 2 hours, but if it is 1 hour, Zn removal may be insufficient and an N-type layer may not be obtained).If it is 2 hours or more, an N-type layer may not be obtained. was obtained with good reproducibility.
実に布ｒ２”す２
第３図・は第２の発明の実施において用いた縦型浸ｎ法
の装置を模式的に示しだものである。電気炉１１及び石
英反応管１２によ）構成される。炉内には、金属ガリウ
ム３ Ｋｇ、ＧａＡｓ多結晶２４０，９゜テルル１２０
ｍ９を配合した組成の成長溶′ｔｉ、４が、炉外の反応
管上部には、Ｐ型ＧａＡｓ基板３を装着した基板ホルダ
ー１３が設置されている。また反応管上部にはＺｎ投入
器６及びＡｔ投入器７が設置されている。この状態で、
真空置換後水素ガスを流しながら９００℃まで昇温する
。９００℃で２．５時間保持した後、Ｚｎ投入器６から
Ｚｎ ３ りをＡｔ投入器７からＡｔ４．８ｇを添加す
る。更に３０分間９００℃で保持した後、基板ホルダー
１３を成長溶液の直上部で予熱した後成長溶液に′Ｉ２
１青し、冷却速度０５℃／分で８６０ｃまで徐冷しＰ型
層を成長させる。この温度で成長を一時停止しＡｒガス
を流しながら約２ Ｔｏｒｒの減圧下で２時間保持し溶
液中のＺｎを除去した後、常圧に戻し再び水素ガスを流
してＡ、を投入器７より Ａｔ １８ ｇを追加する。In fact, Figure 3 schematically shows an apparatus for the vertical immersion method used in the implementation of the second invention. Inside the furnace, 3 kg of metallic gallium, 240.9 kg of GaAs polycrystal, 120° tellurium
A substrate holder 13 on which a P-type GaAs substrate 3 is mounted is installed at the upper part of the reaction tube outside the furnace where the growth melt 'ti,4 having a composition containing m9 is placed. Further, a Zn charger 6 and an At charge charger 7 are installed at the upper part of the reaction tube. In this state,
After vacuum replacement, the temperature is raised to 900° C. while flowing hydrogen gas. After holding at 900° C. for 2.5 hours, Zn 3 was added from the Zn feeder 6 and 4.8 g of At was added from the At feeder 7. After holding the temperature at 900°C for another 30 minutes, the substrate holder 13 was preheated directly above the growth solution, and then the growth solution was heated with 'I2.
1 blue and slowly cooled to 860°C at a cooling rate of 05°C/min to grow a P-type layer. Growth was temporarily stopped at this temperature, and the solution was kept under a reduced pressure of approximately 2 Torr for 2 hours while flowing Ar gas to remove Zn from the solution.Then, the pressure was returned to normal pressure and hydrogen gas was again flowed, and A. Add At 18 g.
追加後：３０分間経た後、１０℃昇温し８７０℃で１０
分間保持して再び冷却速度０．５℃／分で８３０Ｃまで
徐冷しＮ層を成長させ、８３０℃に達した時基板ホルダ
ー１３を成長溶液よシ分離して反応管上部寸で引き上げ
る。この工程により約２５訓ｐ型層及び約２５μｍのＮ
型層が成長した。まだＥＰＭＡでの組成分析の結果はＰ
型層ばＧａＯ，６８Ａｔｏ、ｓｓ’、Ｎ型層はＧａＯ，
３８ＡｔＯ，６□Ａｓであった。得られた発光素子の発
光波長は６７００ Ａ ％発光出力は実施例１のものと
ほぼ同一であった。After addition: After 30 minutes, increase the temperature by 10℃ and raise the temperature to 870℃ for 10 minutes.
The mixture is held for a minute and then slowly cooled to 830C at a cooling rate of 0.5C/min to grow an N layer. When the temperature reaches 830C, the substrate holder 13 is separated from the growth solution and pulled up by the upper part of the reaction tube. This process results in approximately 25% p-type layer and approximately 25μm N
The mold layer has grown. The results of the composition analysis by EPMA are still on P.
The type layer is GaO, 68Ato, ss', the N type layer is GaO,
They were 38AtO and 6□As. The light emission wavelength of the obtained light emitting device was 6700 A, and the light emission output was almost the same as that of Example 1.
実施例１ではＮ型層の表面にスライダーによるキズ溶液
の残留による表面不良がみられたが実施例２ではほぼ完
全な鏡面が得られた。In Example 1, surface defects were observed on the surface of the N-type layer due to scratches caused by the slider and residual solution, but in Example 2, an almost perfect mirror surface was obtained.
同一溶液から連続してＰ型層及びＮ型層を成長させるこ
とにより安定した特性のＧａＡｌＡｓ発光素子の製造が
可能となシガリウムの原単位も従来の約半分と７（ｔっ
た。また縦型浸漬法の採用し多数枚束ねた！′１り造の
基板ホルダーを用いることによ）、１回の成長で直径約
５０ｍｍφのウェハー３０枚の処理が可能となシはぼ完
全な鏡面が得られるようになっ 、′こ 。By continuously growing a P-type layer and an N-type layer from the same solution, it is possible to manufacture a GaAlAs light-emitting device with stable characteristics. By using the immersion method and bundling a large number of wafers (using a manufactured substrate holder), it is possible to process 30 wafers with a diameter of about 50 mmφ in one growth, and a perfect mirror surface can be obtained. Now I can do it.
上記実施例では発光波長が６６００〜６７００Ｘの赤色
発光であったがＰ型ＧａＡｌＡｓ層のアルミニウムの組
成を変えることにより６５００〜９０００ Ｘの発光が
可能である。またＮ型添加剤としてテルル（Ｔｃ）を用
いたがイオウ（Ｓ）、セレン（Ｓｅ）であっても良くＰ
型添加剤としてはカドミニウム（Ｃａ）でちっても良い
。In the above embodiment, red light was emitted with an emission wavelength of 6600 to 6700X, but by changing the composition of aluminum in the P-type GaAlAs layer, light emission of 6500 to 9000X is possible. In addition, tellurium (Tc) was used as an N-type additive, but sulfur (S) or selenium (Se) may also be used.
Cadmium (Ca) may be used as a mold additive.
繁１図は従来技術の横型スライドボートを示す説明図で
ある。
１・・・下部スライダー、２・・・上部スライダー、３
・・・Ｐ型ＧａＡｓ基板、４・・・Ｐ型成長溶液、５・
・・Ｎ型成長溶液。
第２図は本発明に使用する横型スライド＋ｌ：” −ト
の一例を示す図である。
１・・・下部スライダー、２・・・中部スライダー、３
・・・Ｐ型ＧａＡｓ基板、・１・・・成長溶液、８・・
・上部スライダー、９・・・追加用アルミニウム。
第３図は本発明に使用する縦型浸漬法の装置の一例を示
す図である。
３・・・Ｐ型ＧａＡｓ基板、４・・・成長溶液、６・・
・Ｚｎ投入器、７・・・Ａｔ投入器、１１・・・電気炉
、１２・・・石英反応管、１３・・・基板ホルダー。Figure 1 is an explanatory diagram showing a conventional horizontal slide boat. 1...Lower slider, 2...Upper slider, 3
... P-type GaAs substrate, 4... P-type growth solution, 5.
...N-type growth solution. FIG. 2 is a diagram showing an example of a horizontal slide used in the present invention. 1. Lower slider, 2. Middle slider, 3.
... P-type GaAs substrate, 1... Growth solution, 8...
・Top slider, 9...aluminum for addition. FIG. 3 is a diagram showing an example of an apparatus for the vertical dipping method used in the present invention. 3... P-type GaAs substrate, 4... Growth solution, 6...
- Zn charger, 7...At charger, 11...electric furnace, 12...quartz reaction tube, 13...substrate holder.
Claims (2)
さらに該層上にＮ型ＧａＡｌＡｓ層を有するＧａＡｌＡ
ｓ発光素子を液相エピタキシャル成長により製造するに
際して、亜鉛（Ｚｎ）とテルル（Ｔｅ）を添加したアル
ミニウム（Ａｌ）−ガリウム（Ｇａ）溶液よりまずＰ型
ＧａＡｌＡｓ層を成長させた後減圧処理により溶液中の
Ｚｎを除去し、次いでＡｌを追加した後引き続きＮ型Ｇ
ａＡｌＡｓ層を同一溶液から連続して成長させることを
特徴とするＧａＡｌＡｓ発光素子の製造方法。(1) GaAlA having a P-type GaAlAs layer and an N-type GaAlAs layer on the P-type gallium arsenide substrate.
When manufacturing a light-emitting device by liquid phase epitaxial growth, a P-type GaAlAs layer is first grown from an aluminum (Al)-gallium (Ga) solution to which zinc (Zn) and tellurium (Te) are added, and then a p-type GaAlAs layer is grown in the solution by vacuum treatment. After removing Zn and adding Al, the N-type G
A method for manufacturing a GaAlAs light emitting device, characterized in that aAlAs layers are successively grown from the same solution.
用いることを特徴とする特許請求の範囲第１項記載のＧ
ａＡｌＡｓ発光素子の製造方法。(2) G according to claim 1, characterized in that a vertical dipping method is used during liquid phase epitaxial growth.
aMethod for manufacturing an AlAs light emitting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59207944A JPS6186500A (en) | 1984-10-05 | 1984-10-05 | Manufacture of gaalas light emitting semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59207944A JPS6186500A (en) | 1984-10-05 | 1984-10-05 | Manufacture of gaalas light emitting semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6186500A true JPS6186500A (en) | 1986-05-01 |
| JPH0522677B2 JPH0522677B2 (en) | 1993-03-30 |
Family
ID=16548119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59207944A Granted JPS6186500A (en) | 1984-10-05 | 1984-10-05 | Manufacture of gaalas light emitting semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6186500A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61127699A (en) * | 1984-11-26 | 1986-06-14 | Mitsubishi Monsanto Chem Co | Gallium arsenide/aluminum mixed crystal epitaxial wafer and its manufacturing method |
-
1984
- 1984-10-05 JP JP59207944A patent/JPS6186500A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61127699A (en) * | 1984-11-26 | 1986-06-14 | Mitsubishi Monsanto Chem Co | Gallium arsenide/aluminum mixed crystal epitaxial wafer and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0522677B2 (en) | 1993-03-30 |
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