JPS6186942A - Discharge reaction apparatus using rotary magnetic field - Google Patents

Abstract

PURPOSE:To enable high quality and high speed treatment, by providing a means for generating a rotary magnetic field along the surface of an electrode and a means for limiting or prohibiting the motion of the electron moving around the electrode. CONSTITUTION:An article 102 to be treated is placed on a non-earthed electrode 101, of which the entire surface is covered with an insulator 103 made of a fluorocarbon resin, within an earthed metal vacuum container 100. High frequency power is applied between the vacuum container 100 and the electrode 101 from a power source 125 and, at the same time, a three-phase AC current is flowed to the coils 104, 105, 106 provided to the outside of the vacuum container 100 from a power source 127 and a rotary magnetic field B parallel to the flat surface of the electrode 101 is formed. As a result, an electron is inhibited from a turn-around dummy cycloid motion around the electrode 101 by the side surface of the insulator 103 and the inner wall of the vacuum container 100 but rotated in the direction of the magnetic field B and high density plasma is generated in the vicinity of the flat surface part of the electrode 101.

Description

Detailed Description of the Invention (Field of Ibara Industrial Application) The present invention generates gas plasma by electric discharge in A'Z, and uses this to deposit a thin film on the surface of a workpiece.

This invention relates to a discharge reaction device that performs treatments such as etching, cleaning, hardening, and surface alteration.

(Prior art and its problems) Conventionally, these devices are typically of the two-electrode discharge force type, but for example, in cases where the object to be processed is placed on the non-grounded 1+j electrode and processed. If the density of the plasma is increased by increasing the power applied between the electrodes in order to maintain the processing speed of 70), the absolute value of the negative voltage of the ungrounded 0IIl electrode will increase, resulting in a reduction in processing speed. In order to solve this problem, the magnetic field is applied in half a line on the surface or in a shape that follows the electrode surface. This magnetic field Q) is used to generate discharge plasma with a low density near the electrode, and the object to be processed is treated with this plasma.

The reason for the generation of high-density discharge plasma at this time is, as is well known, that the motion of the electrons is concave due to the force of the magnetic field, causing the trajectory to curve, resulting in pseudo-cycloidal motion. A typical example of a conventional device using this method is a device having the structure shown in FIGS. 8, 9 and 10.

In these figures, 10 indicates the electrode, 11 indicates the pseudo-cycloid motion of the electron e, 12 indicates the lines of magnetic force, and B indicates the direction of the magnetic field. 13 in FIG. 10 is a vacuum container.

In FIGS. 8 and 9, illustration of the vacuum container is omitted.

In this pseudo-cycloid motion 11, the electron e is '6
Circulating motion in a fixed direction along or around the surface of jmlO. The direction of this circular motion is determined by the direction of the magnetic field and the direction of the linear magnetic field, and in FIG. 8 it runs clockwise endlessly on the surface of the flat electrode 10, and in FIG. As shown in the figure, the columnar electrode 10 goes around endlessly as shown in the figure, and in FIG. It will move endlessly in the direction.

Now, if the device is configured such that this pseudo-cycloidal motion is prohibited or restricted from moving around the surface of the electrode 10 or around it, so that the pseudo-cycloidal motion is performed only on a desired surface of the electrode 10. , it is likely that a daytime-density plasma and thus faster processing will be realized, at least to that extent, but an apparatus having the configuration shown in FIGS. 11 and 12 that accomplishes this has not yet been implemented. However, in FIGS. 11 and 12, the same members as above are given the same reference numerals. 14 is an insulator, and 15 is a barrier made of an insulator, both of which are installed for the purpose of restricting or prohibiting the circular movement of electrons.

The reason why the device shown in Figure 11.12 is not put into practical use is that the orbiting of electrons is limited to one direction as mentioned above, and if there is a member that prohibits or restricts orbiting, the electrons will collide with that member and jump. However, it cannot orbit in the opposite direction and if it does not orbit in the original direction again, it will end up stagnating near the obstacle, and as shown by the many points in Figure 13, the plasma @ degree distribution This is because a large gradient or non-uniformity occurs in the plasma, resulting in significant non-uniformity in the treatment of the workpiece exposed to this plasma.

(Object of the Invention) The present invention aims to provide a discharge reactor that realizes high-density and highly uniform plasma along and near the surface of an electrode, thereby enabling high-quality and high-speed processing. purpose.

(Structure of the Invention) The present invention includes a vacuum container containing an electrode, a means for introducing a predetermined gas into the vacuum container, a means for controlling the pressure in the vacuum container, and a means for supplying electric power to the t&. In the discharge reaction apparatus, a means for generating a discharge is provided, and a workpiece placed in the vacuum vessel is treated with the plasma generated by the discharge. The above object has been achieved by an aDM device which includes means for generating a rotating magnetic field and means for restricting or restricting the orbital movement of electrons that are intended to orbit around one of the electrodes.

(Example) Embodiments of the present invention will be described below with reference to the drawings.

In the embodiment shown in FIG. 1, a grounded metal stem is placed in a container 100, and a workpiece 102 is placed on a non-grounded electrode 101 whose entire lower part is covered with an insulator 103 made of fluororesin. has been done.

From the gas inlet 108, a plurality of gas pumps 123,
Valve 122. Processing gas with predetermined components and mixing ratio is introduced into the X-empty container 100 via the barrier pull leak 121 and is flowed onto the surface of the front electrode 101, and from the exhaust port 109 via the pressure adjusting pulp 110. The gas inside the vacuum container 100 is then exhausted to the outside by the pump 120.

Vacuum container 100 (!: @, % 101 )jHJk
:, t(When high frequency power is applied from the two sources 125, the coils 104, 105, 10 outside the vacuum vessel 100
When a three-phase alternating current is applied to 6 through wiring (not shown) from a power source 127 to create a rotating magnetic field B parallel to the plane portion (surface) of the electrode 101, electrons are generated on the side surface of the insulator 103 and the inner wall of the vacuum container 100. Circulating quasi-cycloid motion around the electrode 101 is prevented, but since the direction of the magnetic field B rotates, the stopping surface is dispersed around the entire surface, creating a uniform high-density plasma near the flat part of the electrode 101. occurs. however,
Here, "uniform" means that the temporal average value of the plasma is uniform at each location on the upper surface of the flat part of the electrode. The workpiece 1 is heated by this uniform and highly dense plasma.
()2 is processed at high speed with high uniformity. 1
'i, Pole] 02 is equipped with four fluids to cool or adjust the temperature. As shown in FIG. 1 (71, the arc-shaped arrow 111 indicates that the magnetic field B rotates).

11i If B is fixed, the processing speed of the object 102 is fast, or the uniformity of the processing speed is inadequate. For example, in the apparatus shown in FIG.
ur'' gas was introduced to etch the 8102 film on the surface of a 5-inch diameter silicon wafer as the workpiece 102, the uniformity of the etching speed was ±40.

On the other hand, the same device.

In this example, where the same workpiece is used, the coil ] (
+4, 105, 106 with commercial three-phase current (power supply 1
When etching was performed in the same manner by applying the voltage from 27), the uniformity of the etching could be improved to within ±5%. The etching speed was 5000 λ/ml or more, which was faster than the conventional method.

The inventor of this application previously had experience in successfully achieving similar high-speed processing and uniform processing by using a simple alternating magnetic field as the applied magnetic field in the apparatus shown in FIG. It has been found that when a rotating magnetic field is applied, the plasma is more uniformly and two-dimensionally distributed than when a simple alternating magnetic field is applied, resulting in good results.

As the three-phase father flow to the coils 104, 105, and 106 is made more precise, etching occurs in a lower pressure range, and the etching speed is 7oooA/ from the pressure number ITITo r r to several tens of m'i''urr. More than a shout is obtained.

Generally, in a low-pressure region, the higher B is, the higher the density of plasma is concentrated on the electrode, and the etching rate tends to increase. be.

Although the case of etching has been described above, various gases used for plasma CVD are introduced into this vacuum container 100, and the electrode 1 is
A desired thin film can be deposited on a substrate to be processed, for example 130 (used at ground or floating potential), placed near 01.

Introduction 7: To give an example of a gas and a thin film that can be multiplied by Jg,
As per myself.

8+ I'14+ N2 + NHJ -81s
144 film 5il14 or Si2H6 etc. -a-8,:H
Film S + Ha + N20 = 510z Film quality, film thickness uniformity, and film deposition speed reading are comparable to conventional devices that use a one-sided magnetic field and allow electrons to circulate, or V. There is something that surpasses Le. That is, the apparatus shown in FIG. 1 can also be used as a plasma CVD apparatus.

Note that if 130 in FIG. 1 is used as an electrode and this is not grounded, the vacuum container 100 can be constructed of an insulating material such as fluororesin or glass.

2 to 5 show other embodiments of the present invention.

The same reference numerals are given to the members having the same function as the first one.

FIG. 2 is a plan view of the device, showing six excitation coils 104, 1041, 105, and 105 surrounding the vacuum vessel 100.
106°, 106°, and 106° to create a rotating magnetic field by passing the current of each phase of the three-phase father current for the sphere. This is a typical method commonly used to excite three-phase induction motors.

Figure 3 shows three excitation coils (104, 105° 106
), the current of each phase of the three-phase flow is adjusted in each of them to create a rotating magnetic field (h is shown).

In the device shown in FIG. 4, the space below the electrode 101 is almost completely filled with a wireless material, and the electron Q
) Exercise is prohibited. The Lunobee coil is saddle-shaped to increase excitation efficiency and make the device more compact.

The apparatus shown in FIG. 5 applies the present invention to a vacuum discharge processing bag η'4 employing a three-electrode double VR system.

The vacuum vessel 100 is grounded, and each of the electrodes 101, 130Z) is powered by a separate power source 125, 135. For these power supplies, DC, AC, high-frequency power, or combinations of various power values are selected depending on the content of the processing, and the high-speed waves of the processing can be made even more precise. .

Figure 6 shows that in order to limit or prohibit electronic υ] rotation interlocking,
The periphery of the electrode 101 is raised. Electrons collide with this rising wall and are prevented from orbiting.

In Figure 7, the rising right of Figure 6 is painted with an insulating material.

Due to the above force, the electric train of the present invention can be placed side by side with the electric train 7'L of the present invention and assembled with the conventional M-type electric train/book, and the Samurai's I1 and 4 can be assembled.
It's real! It is possible to do 1'4-.

■The members that limit or prohibit the above-mentioned rotational interlocking of the unexploded unit can be freely selected from two curved plane surfaces, a side wall, a voltage application electrode, a ground battery, 10,000 pieces of gold, an insulator, and their assembly. .

(Effects of the Invention) The discharge reaction device of the present invention is as described above, and generates a uniform and high-density gramma on an electric current, and has Ili in the vicinity thereof.
The processed material can be processed at high speed with high efficiency and small ion bombardment with excellent uniformity.

[Brief explanation of drawings]

FIG. 1 is a diagram showing the configuration of a discharge reactor according to an embodiment of the present invention. Figures 2 and 3 are layout diagrams of electromagnetic coils for creating a rotating magnetic field. FIGS. 4 and 5 are diagrams showing the structure of another embodiment of the invention ν1. FIGS. 6 and 7 are diagrams illustrating a barrier that inhibits the circulation of electrons. 8th, 9th, and 101/11 are diagrams showing the interlocking of the IL element of the conventional discharge reaction device b1. Figure 11.12 shows that when the plasma market rate is increased,
- A diagram showing the movement of electrons when the circular movement of the child is restricted or prohibited. FIG. 13 is a diagram showing the distribution of plasma intensity at that time. 10.101...Non-dependent electric power 102...Temporarily processed material 11.
・・・・・・Electronic chivalry-like buikroid interlocking 12・・・・・・
・Magnetic field lines, 13... Direction of magnetic field, e... Electrons 13.1
00...A empty container 14.103...Insulator, 130...
・Electrodes 104, 105, 106-[For generating EJ rotating magnetic field'
IT magnetic coil, 108...Gas inlet 109
・・・Gas exit

Claims (2)

[Claims] (1) A vacuum container containing an electrode, a means for introducing a predetermined gas into the vacuum container, and a means for controlling the pressure inside the vacuum container, and electricity is supplied to the electrode to generate discharge. In a discharge reaction apparatus for treating a workpiece placed in the vacuum container by causing a discharge reaction to occur, a means for generating a rotating magnetic field along the surface of the electrode, and a means for restricting or restricting the movement of electrons orbiting around the electrode are provided. 1. A discharge reaction device using a rotating magnetic field, characterized by comprising means for inhibiting the discharge. (2) A discharge reaction device using a rotating magnetic field according to claim 1, wherein the electrode has a flat portion, and the rotating magnetic field is along the flat portion of the electrode.