JPS6186951U - - Google Patents
Info
- Publication number
- JPS6186951U JPS6186951U JP17285284U JP17285284U JPS6186951U JP S6186951 U JPS6186951 U JP S6186951U JP 17285284 U JP17285284 U JP 17285284U JP 17285284 U JP17285284 U JP 17285284U JP S6186951 U JPS6186951 U JP S6186951U
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- speed
- diode
- transistor
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Electronic Switches (AREA)
Description
第1図は本考案の一実施例の平面図、第2図は
スピードアツプダイオード外付けの従来例の平面
図、第3図はスピードアツプダイオード内蔵の従
来例の図式的断面図、第4図はその平面図、第5
図は本考案の異なる実施例の平面図である。
1:半導体基板、2:駆動段トランジスタベー
ス電極、3:出力段トランジスタベース電極、4
:出力段トランジスタエミツタ電極、5:スピー
ドアツプダイオードカソード電極。
Fig. 1 is a plan view of an embodiment of the present invention, Fig. 2 is a plan view of a conventional example with an external speed-up diode, Fig. 3 is a schematic sectional view of a conventional example with a built-in speed-up diode, and Fig. 4. is its plan view, 5th
The figures are top views of different embodiments of the present invention. 1: Semiconductor substrate, 2: Drive stage transistor base electrode, 3: Output stage transistor base electrode, 4
: Output stage transistor emitter electrode, 5: Speed up diode cathode electrode.
Claims (1)
ジスタとその出力段側のトランジスタの一方の導
電形のベース領域に他方の導電形の領域を形成し
てなるスピードアツプダイオードとを内蔵し、該
スピードアツプダイオードの他方の導電形の領域
が駆動段側のトランジスタのベース領域と接続さ
れるものにおいて、前記スピードアツプダイオー
ドを形成する他方の導電形の領域が複数で、分散
して設けられたことを特徴とする半導体装置。 A Darlington-connected transistor and a speed-up diode formed by forming a base region of one conductivity type of the transistor on the output stage side and a region of the other conductivity type are built in the same semiconductor substrate, and the other speed-up diode A semiconductor in which a region of conductivity type is connected to a base region of a transistor on the drive stage side, wherein a plurality of regions of the other conductivity type forming the speed-up diode are provided in a distributed manner. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17285284U JPH0416442Y2 (en) | 1984-11-14 | 1984-11-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17285284U JPH0416442Y2 (en) | 1984-11-14 | 1984-11-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6186951U true JPS6186951U (en) | 1986-06-07 |
| JPH0416442Y2 JPH0416442Y2 (en) | 1992-04-13 |
Family
ID=30730510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17285284U Expired JPH0416442Y2 (en) | 1984-11-14 | 1984-11-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0416442Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62295455A (en) * | 1986-05-14 | 1987-12-22 | Sanyo Electric Co Ltd | Semiconductor device |
-
1984
- 1984-11-14 JP JP17285284U patent/JPH0416442Y2/ja not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62295455A (en) * | 1986-05-14 | 1987-12-22 | Sanyo Electric Co Ltd | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0416442Y2 (en) | 1992-04-13 |
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