JPS6189629A - Method and device for drawing by scan-type beam - Google Patents

Method and device for drawing by scan-type beam

Info

Publication number
JPS6189629A
JPS6189629A JP59211099A JP21109984A JPS6189629A JP S6189629 A JPS6189629 A JP S6189629A JP 59211099 A JP59211099 A JP 59211099A JP 21109984 A JP21109984 A JP 21109984A JP S6189629 A JPS6189629 A JP S6189629A
Authority
JP
Japan
Prior art keywords
scanning
amount
pattern
diameter
conducted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59211099A
Other languages
Japanese (ja)
Inventor
Akira Noma
野間 昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59211099A priority Critical patent/JPS6189629A/en
Publication of JPS6189629A publication Critical patent/JPS6189629A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To avoid the reduction of a throughput by a method wherein a beam irradiation is conducted as a normal scan when the drawing part of a drawing pattern is scanned, while the beam irradiation is conducted as a correcting scan when the non- drawing part thereof is scanned, and thus the normal scan and the correcting scan are conducted simultaneously by one scanning. CONSTITUTION:A beam amount switching circuit 43 fulfills a function of impressing a voltage on a blanking electrode 41 so that a first beam amount can be obtained when scanning is conducted on a drawing part and that a second beam amount can be obtained when scanning is conducted on a non-drawing part. A blanking control circuit 43 fulfills a function of impressing a voltage on the blanking electrode 41 so that the beam amount can be reduced to zero at a time when the stoppage of a beam irradiation is needed, such as the time of return of a scan line. On the other hand, a beam radius controlling device 50 is composed of a beam radius adjusting electrode 51 and a beam radius shifting circuit 52. The beam radius shifting circuit 52 shifts a voltage impressed on the beam radius adjusting electrode 51 so that a first beam radius can be obtained when scanning is conducted on the drawing part and that a second beam radius can be obtained when scanning is conducted on the non-drawing part.

Description

【発明の詳細な説明】 〔発明の技キ+i分野〕 本発明は走査ハ゛1ビー1\描両方法および描画装置、
持に集積回路用のマスク形成あるいはウェハのパターン
形成に用いられる電子ビーム等ビームを使った走査型ビ
ーム描画方法および描画装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a scanning device and a scanning device;
The present invention relates to a scanning beam lithography method and lithography apparatus using a beam such as an electron beam, which is used for forming masks for integrated circuits or patterning wafers.

〔発明の技3(,1的背狽〕 一般に電子ビームによるパターン形成を行なう1“4合
、近接’A+宋に対する補正が行なわれている。
[Technique of the Invention 3 (1) In general, correction is made for 1"4" and "near" A+Song in which pattern formation is performed using an electron beam.

まずこの近1&効果について簡111に説明づることに
づる。いよ第2図(a )に承りようにパターン形成面
1(例えば崖)91木早板)[−に描画部2′ と非描
画部2″とから(14成される描画パターン2を形成さ
ぜる場合を乙λる1、このようなラインアンドスペース
パターンを形成させるためには第2図(b)に示1J、
うに1メ両A ”□ GにA3いてのみビームをパター
ン形成面に照C)I tJればよい。実際には1木のビ
ームをパターン形成面上で走査ηるノこめ、描画部2′
を走査中(まビームを照q・1シ、非1i6画部2″を
走査中はビームを黒用しないことになる。
First, I will briefly explain this effect. Now, as shown in Fig. 2(a), a drawing pattern 2 consisting of (14) is formed on the pattern forming surface 1 (for example, a cliff) 91 wooden planks) [-] from the drawing part 2' and the non-drawing part 2''. In order to form such a line and space pattern, as shown in Fig. 2(b),
It is only necessary to shine the beam onto the pattern forming surface C)I tJ only when A3 is in G position.Actually, one beam is scanned over the pattern forming surface.
While scanning (the beam is illuminated q.1, the beam is not used for black while scanning the non-1i6 image area 2'').

しかしながらこのような走査を行なった場合、パターン
形成面上のドーズ量は第2図(C)のようになる。ドー
ズ量がこのような分布になるのは、ビームの前方散乱に
起因づ−るドーズ成分の他に、後方散乱に起因り−るド
ーズ成分が存在するからである。例えば電子ビームの場
合、第2図(b>に示すビームAに起因Jるドーズ成分
は、電子の前方散乱に起因M−るドーズ成分A′と、l
)0方散乱後の反e4電子による1り方散乱に起因M−
るドーズ成分A″ (背景ドーズ)との和になる。従っ
てビーl\A〜Gを黒用したといの1ヘ一ズ分布は各背
81ドース成分の和1−1に各ビームの前方散乱による
ピークA:合成したものとなる。このようなドーズ介在
にJづいて、例え(まドーズ量が第2図(C)の破線よ
りiQい場合にのみパターンが形成されるとりると、パ
ターン△おにびG(よ形成されず、また形成されたパタ
ーン13〜Fもその幅が不均一となる。この7」;う<
乍現象か一般に近接効果と叶ばれている。
However, when such scanning is performed, the dose amount on the pattern forming surface becomes as shown in FIG. 2(C). The reason why the dose has such a distribution is that in addition to the dose component caused by forward scattering of the beam, there is also a dose component caused by backward scattering. For example, in the case of an electron beam, the dose component J caused by the beam A shown in FIG.
) M- due to 1-direction scattering by anti-e4 electrons after 0-direction scattering
It is the sum of the dose component A″ (background dose). Therefore, the 1-helson distribution when beams l\A to G are used as black is the sum of the back 81 dose components (1-1) and the forward scattering of each beam. Peak A: is a composite peak.Based on such dose intervention, for example, if we assume that a pattern is formed only when the dose is iQ higher than the broken line in Fig. 2 (C), then the pattern △ Rice G
This phenomenon is generally considered to be the proximity effect.

−ト述のような近接効果に対゛げる補iE手段として従
来からヴエクク型1111画装置を用いtこドーズ補正
、形状補正等が知られているが、走査型(ラスク型)1
1成両装置では同手法の適用が技術的(こ非常に困り・
;1で実1;仝にはほとんど行なわれてい4rい。
- As a supplementary iE means for dealing with the proximity effect as mentioned above, dose correction, shape correction, etc. using a Vexk type 1111 imaging device have been known, but scanning type (Rask type) 1
Applying the same method to a single-generation device is technically difficult (this is very difficult).
1 is actually 1; 4r is almost never done.

R]近、上述の近接効果を効果的(ご補IE ’Jる方
法かGcraint OwcnとPaul旧ssman
によって発表された。以下この方法について簡(11(
こ説明することにリーる。な(13論’: tm tこ
ついて(ま、j 八ρp1. Phys、 vol。
R] Is there a way to effectively use the proximity effect described above?
announced by. Below is a brief explanation of this method (11 (
Let me explain this. (13 theory': tm t got stuck (Ma, j 8ρp1. Phys, vol.

54、(G)1’183ρ3573を参照されたい。54, (G)1'183ρ3573.

いよ第2121 (a )に示ツJ:うなラインアンド
スペースパターンを形成りる場合を考える。、1:ザ、
前述のように通常の走査を(テない第2図(C)に示す
ようなドーズ分4iを1フる。次に全背明ドーズHを相
殺づるような補正走査を以下のようにしで行なう。即ら
、第3図(a)に示づ描画パターンのうち、描画部2′
を走査中はビームを非照〔)・jとし、非描画部2″を
走査中はビームを照射する。
Let us now consider the case of forming a line and space pattern as shown in No. 2121(a). , 1: The,
As mentioned above, the normal scanning is performed by subtracting the dose 4i by 1 as shown in FIG. That is, in the drawing pattern shown in FIG. 3(a), the drawing part 2'
While scanning, the beam is not irradiated [).j, and while scanning the non-drawing area 2'', the beam is irradiated.

これは前述の通常の走査とは黒用・非照射の関係が全く
逆に4【っている8、シかしビーlX串およびビーム径
を前回の走査条件とは′σえ、前方散乱と後方散乱との
和が114回の走査に[13ける後方散乱(背明ドーズ
)に等しくなるような走査条件にJる。
This is because the relationship between black and non-irradiation is completely opposite to that of the normal scanning mentioned above. The scanning conditions are such that the sum of the backscattering and the backscattering is equal to the backscattering (backlight dose) multiplied by 13 times in 114 scans.

第3図(b)はこの補正走査にお(づるビーム照Q’1
区間を示し、第3図(C)はこの?+fi IT定走査
にるドーズ量分布Q(破線)を示>J−o例えばビーム
Jに起因するドーズ成分はJ′のようにムる。結局ビー
ム■〜Pを照(J−1シたどぎのドーズ分イ1jは8ド
一ズ成分のfl]Qとなる。
Figure 3(b) shows this correction scanning (Zuru beam illumination Q'1
This section is shown in Figure 3 (C). +fi Shows the dose distribution Q (broken line) in IT constant scanning>J-o For example, the dose component caused by the beam J disappears like J'. In the end, the beams ■ to P are illuminated (the dose of J-1 is 1j, which is fl of 8 dosing components).

このように1つの描画パターンを描画するのに、通常の
走査と、補iI走合との2回の走査を行なうことにより
、最終的なドーズ分イIiは第4図に承りように第2図
(C)に示寸分(1’+と第3図(C)に示す分布との
和となり、全背類ドーズHは補正ドーズQによって相殺
され、近接効果に対づ−る補正がなされることになる。
In this way, by performing two scans, the normal scan and the supplementary II scan, to draw one drawing pattern, the final dose II is determined by the second II scan, as shown in Fig. 4. Figure (C) shows the sum of the size (1'+) and the distribution shown in Figure 3 (C), and the total dorsal dose H is canceled out by the correction dose Q, and correction for the proximity effect is made. It turns out.

〔背橿技術の問題点〕[Problems with back-steering technology]

前述のGeraint OwcnとPaul Riss
manによって発表された方法は、走査型ビーム描画装
置に比較的容易に適用できる利点があるが、スループッ
ト(単位時間あたりの生産量)が低下りるという欠点が
ある。即ち、1つの描画パターンを描画するのに同じパ
ターンを2度走査するため、走査時間は1度の走査に比
べて2倍必要となる。通常の走査と補正走査との間に行
なわれるビーム間およびビーム径の調整時間を考虞する
とスループットは1度の走査による方法に比べて□以下
となつてしまう。このようなスルーブツトの低下は高生
産効率、早産性を要求される集積回路の製造には大きな
弊害となる。
The aforementioned Geraint Owcn and Paul Riss
Although the method announced by Man. That is, since the same pattern is scanned twice to draw one drawing pattern, the scanning time is twice as long as that required for one scanning. Considering the time required to adjust the beam spacing and beam diameter between the normal scan and the correction scan, the throughput will be less than □ compared to a method using one scan. Such a reduction in throughput is a serious problem in the manufacture of integrated circuits that require high production efficiency and early production.

〔発明の目的〕[Purpose of the invention]

そこで本発明はスルーブツトの低下を招くことシロしに
近接効果の補正を行ないうる走査型ビーム描画方法およ
び描画装置を提供することを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a scanning beam writing method and a writing apparatus that can correct the proximity effect without causing a reduction in throughput.

(発明の概要〕 本発明の特徴は、通゛畠の走査によって生じる近接効果
を、補正走査によって相殺する走査型ビーム描画方法お
よび描画装置において、描画パターンの描画部を走査し
ているときは通常の走査としてのビーム照射を行ない、
非描画部を走査しているときは補正走査とし゛(のビー
ム照印1を行ない、1度の走査で通常の走査と補正走査
とを同曲に行なうようにし、”スルーブツトの低下を回
避した点にある。
(Summary of the Invention) A feature of the present invention is that in a scanning beam lithography method and lithography apparatus in which the proximity effect caused by regular scanning of the field is canceled out by correction scanning, when the drawing portion of the drawing pattern is scanned, the Beam irradiation is performed as a scan of
When scanning a non-drawing area, beam aiming mark 1 is performed as a correction scan, so that normal scanning and correction scanning are performed in the same song in one scan, thereby avoiding a drop in throughput. It is in.

〔発明の実施例〕  ゛ 以下本発明を図示する実施例に阜づいて説明するいよ第
5図(a)に示すようなラインアンドスペースパターン
を形成1」る場合を考える。ここで走査を図示するパタ
ーンの左から右へ行なうちのとする。まず走査は非(1
1“1両部から行なわれるため、補正走査どしてのビー
ムIが照射される(第5図(b))。続いて描画部2′
の走査では、通常走査としてのビームAが照射される。
[Embodiments of the Invention] The present invention will now be described with reference to an illustrative embodiment.Let us now consider the case of forming a line-and-space pattern as shown in FIG. 5(a). Assume that scanning is performed from left to right of the illustrated pattern. First, the scan is non(1
1" Since it is performed from both parts, the beam I for correction scanning is irradiated (FIG. 5(b)). Next, the drawing part 2'
In the scanning, beam A is irradiated as normal scanning.

従ってこの時点でビーム量およびビーム径の切換えがな
される。
Therefore, at this point, the beam amount and beam diameter are switched.

次に非描画部2″の走査では、再び補正走査とし゛  
てビーム量およびビーム径の切換えがなされ、ビームJ
が照射される。以下同様に描画部か非描画部かによって
ご−ムけおよびビーム径を切換えながら走査を続けてゆ
く。この走査条件は前述したJ:うに補正走査にお4(
る前方散乱と後方散乱との和が通常走査における後方散
乱(背県ドーズ)に雪しくなるにうむ条件とする。この
条件は例えば補正走査では通常走査に比べてビーム間を
少なくし、ビーム径を広げることによって達成しうる。
Next, in the scanning of the non-drawing area 2'', correction scanning is performed again.
The beam amount and beam diameter are changed over, and the beam J
is irradiated. Thereafter, scanning continues in the same manner while changing the beam size and beam diameter depending on whether it is a drawing area or a non-writing area. This scanning condition is the J: sea urchin correction scan and 4(
The condition is such that the sum of forward scatter and back scatter becomes similar to back scatter (backward scattering) in normal scanning. This condition can be achieved, for example, by reducing the distance between beams and widening the beam diameter in correction scanning compared to normal scanning.

このJ:うにして走査が終了すると、最終的ドーズ分布
は第5)図(C)のようになる。これは第4図に示した
分イliど同様に近接効果の補正がなされた分布となっ
ている。
When the scanning is completed in this way, the final dose distribution becomes as shown in Fig. 5 (C). This is a distribution in which the proximity effect has been corrected, similar to the distribution shown in FIG.

以上のような走査を行ないつる走査へ“!ビーム描画装
置の一例を第1図に示す。ビーム発1′菰置10は電子
銃11ど電子光学系12とから構成され、描画に必要な
電子ビームを発生させる。パターン形成面支持駆動装置
20は、半導体つIハ等を載せるX−Yステージ21と
、これを駆動づるX−Y駆動モータ22と、これを制w
JづるX−Y位置制御回路23と、X−Yステージ21
の位置を測定するレーザ干ル田24および位胃測定回路
25と、から構成される。ビーム発生装置10′c発生
した電子ビームをパターン形成面上で走査するビーム走
査制御装置30は、偏向電極31と、ラスタ漏向回路3
2ど、から構成されろ。ラスク偏向回路32によって偏
向電極31に電圧が印1jllされ、ここを通過する電
子ビームはパターン形成面上で走査される。ビームfr
!ill fil装置40は、ブランキング電極41ど
、ビームi;j 1.I]換囲路42と、ブランキング
制御回路43ど、から構成される。
An example of a beam drawing apparatus is shown in FIG. The pattern forming surface support drive device 20 includes an X-Y stage 21 on which a semiconductor device, etc. is placed, an X-Y drive motor 22 that drives the stage, and a W that controls this.
Jzuru X-Y position control circuit 23 and X-Y stage 21
It is composed of a laser holder 24 and a position measuring circuit 25 for measuring the position of the holder. A beam scanning control device 30 that scans the generated electron beam on a pattern forming surface includes a deflection electrode 31 and a raster leakage circuit 3.
It is composed of 2. A voltage 1jll is applied to the deflection electrode 31 by the Rask deflection circuit 32, and the electron beam passing therethrough is scanned on the pattern forming surface. beam fr
! The ill fill device 40 includes blanking electrodes 41, beams i;j 1. I] consists of an exchange path 42, a blanking control circuit 43, and the like.

ブランキング電極41は電子ど一ムのクロスオーバ部分
に位置し、ビーム吊切模回路42またはブランキング制
御回路43の指示に従い電子ビームの・′j)を調節・
jる。即ら、ヒ゛−ムjd切換回路42は、描画部上を
走査りるとさは第1のし−1\早どなり、非11“1°
1両61t上を走青りるどさ゛は第2のヒ゛−ム吊とな
るようにジノンキング゛電(々41(ご電Llを印+1
11りるC!4 ii旨を宋し、I ラン* ン’/ 
a+’l ’0111”l 贅洛431J:、走rt線
のしどりlRr ’:’i 〕〕e’−ム照r、M(7
) l’F止/” 必要’j と、3に、ビーム吊をマ
ミどするようにブランキング電怖41に′1b圧を印加
りる機能を宋J−0−・yノ、ビーム(了、Ii制御装
置50は、ビーム径調節電1〜51と、ビームイーそ切
換回路52とから114成される。ビーム径切換回路5
2は、描画部上を走査するとさくよ第1のビーム径どし
、非描画部−トを走査刀るときは第2のビーム径どづる
ように、ビーム径調節電極51に印加する電圧を切換え
る。擢I画制御′装置60 Lま、雷神(式61と、パ
ターンデータ記憶装置(う2ど、描画用ドラ1〜パター
ンメ−Eす63ど、描画制ヤλ11回路64ど、同期回
路6bと、h〜ら1吊成さ(する。パターンデータ記憶
装置62に記憶された111′1両パターンのうち、走
査を行なう一単(0分のパターンデータは、“1°’ 
J>よびO″の用台ぜから成る1〜ツ1−パターンどし
て描画用ドラI・ハ゛ターンメt ’) 63 i、:
 lfl Uさh ル、、Ill’1 画制御2II 
回2R(、L、このドラミーパターンを8照しながら、
ビーム^′・切換回路42、ブラン1ング制御回路71
3、(1′3J、ひビーム径切換回路52(ご必要な指
示4′)える。パ′ターン形成面支持駆動シ5置20f
よ電’5 jX1361の制fiffによりX−Yスア
ーシ21を駆動し、同!l/]回路65は、このX−Y
スJ−シ21の位置(1、シシをIM j’、’1゜測
定回路25から受(〕、ラスク幅向回路32および描画
制御回路64に同期信号をうえる。
The blanking electrode 41 is located at the crossover part of the electron beam, and adjusts the electron beam's
I will. That is, when the beam JD switching circuit 42 scans the drawing area, the beam changes from the first angle to -1\\, and from non-11''1°.
The blue light that runs over 61 tons of cars is suspended from the second beam by the Jinon King Electric Power (41) (sign Ll + 1).
11 Riruru C! 4 ii sung, I run* n'/
a+'l '0111"l Gakuryaku431J:, rt line sidori lRr':'i ]] e'-muteru, M (7
) l'F stop/" necessary 'j, and in 3, the function of applying '1b pressure to the blanking electric fear 41 to lower the beam suspension was established by Song J-0-YNO, beam (completed). , Ii control device 50 is composed of 114 beam diameter adjustment circuits 1 to 51 and a beam diameter switching circuit 52. Beam diameter switching circuit 5
2, the voltage applied to the beam diameter adjustment electrode 51 is applied so that the first beam diameter increases when scanning the drawing area, and the second beam diameter increases when scanning the non-writing area. Switch. I picture control' device 60 L, Raijin (Formula 61, pattern data storage device (U2), drawing driver 1 to pattern machine 63, drawing controller λ11 circuit 64, etc., synchronization circuit 6b) , h to 1 are formed. Among the patterns 111' and 1 stored in the pattern data storage device 62, one of the patterns to be scanned (the pattern data for 0 is "1°"
63 i, :
Ill'1 Image Control 2II
Round 2R (, L, while looking at this drummy pattern 8 times,
Beam^'/switching circuit 42, blanking control circuit 71
3. (1'3J, beam diameter switching circuit 52 (required instructions 4')
Yoden'5 j l/] circuit 65
The position of the rask width direction circuit 32 and the drawing control circuit 64 are sent to the rask width direction circuit 32 and the drawing control circuit 64.

なお、上述の実施例ではビーム吊の調節縁1′1と、ブ
ランキング操作とをともに同一のブランキング電極41
を用いて行なっているが、ビーム(通の調節操作を別な
調面用′1七汚を設けで行なうように(ノーCしよい。
In the above-described embodiment, the adjustment edge 1'1 of the beam suspension and the blanking operation are both performed using the same blanking electrode 41.
Although this is done using a beam, the adjustment operation for the beam can be done by providing a separate surface adjustment (no C).

(発明の効果〕 以上のとおり本発明によれば、]度の走査ひ通常の走査
と補正走査とを同時に行イイうようにしたため、スルー
ブツトの低下を10りことなしに近1名効果に対する補
正を施しlζ走査型ビーム描画を行な)ことかできる。
(Effects of the Invention) As described above, according to the present invention, since normal scanning and correction scanning are performed at the same time, the throughput can be corrected without reducing the throughput by more than 10%. can be applied to perform lζ scanning beam writing).

【図面の簡単な説明】[Brief explanation of the drawing]

第′1図(よ本発明に係る走査型ビーム描画装置の一実
施例の、J[明図、第2図は通常の走査にJ、るビーム
照()・1どその結果のドース量分イrjを示り説明図
、第3図tit ?+Ii i「走査ににるビーム照甲
とそのれ1□宋のドース吊分布を示?l説明図、第4図
は通常の走査と補![走1Yiどの両方を行なったどさ
のドーズ量分で口、l、、 ;jl:、、す1)1明図
、第5図は本発明に係る走台型ビーム描1lIij方法
によるビーム照q・1どその結末のドース1゛11分イ
Iiを示づ説明[図−Cある。 ]・・・パターン形成面、2・・・1v゛1両パターン
、10・・・ビーム光生装置、11・・・電子Uい12
・・・電子光−;ツ糸、20・・・バクーン形成面支1
、′I駆動装;I”・′1.21・・・X−Yスブ−−
シ、22・・・X −、Y駆動上−り、?3・・・X−
Y位置制り1回路、2.4・・・レーリー゛■四計、2
!□5・・(、装置測定回路、30・・・ビーlX走合
制引1賃11ゞ1、:31・・(9,向’+”q ti
j、32・・・ラスタ偏向回路、40・・・ヒ’−ムi
ii djl ?)II S4< :i’i、41−−
1 ラン−CI/’ り’i”fi +’II、42・
・・ビーム/l切操回路、43・・・プランキングコ1
(制御回路、50・・・ビーム径制御装置t、5〕1・
・・ビーム径調節電極、52・・・ビーム径切換回路、
60・・・li+’i画制御装置、61・・・電p1幾
、62・・・パターンデータ記憶装置、63・・・描画
用ドットパターンヌしり、64・・・描画制御回路、6
5・・・同期回路。 出願人代理人  猪  II9     清第3図 パターン位雪 第4図 ABCDEFG 第5図
Fig. 1 shows an embodiment of the scanning beam lithography system according to the present invention. Explanatory diagram showing Irj, Figure 3 tit ?+Ii i "Beam glaucoma in scanning and its 1 □ Showing the dose suspension distribution of the Song Dynasty? l Explanatory diagram, Figure 4 shows normal scanning and supplementary! [The dose amount obtained by performing both of the steps 1 and 1 is 1, 1, and 5. Explanation showing the resulting dose 1゛11min Ii of q・1 etc. [See Figure-C.]...Pattern forming surface, 2...1v1 both patterns, 10...Beam light generating device, 11...electronic U12
... Electron light -; Twin thread, 20 ... Bakun formation face support 1
,'I drive unit;I''・'1.21...X-Y sub--
C, 22...X-, Y drive up, ? 3...X-
Y position system 1 circuit, 2.4... Rayleigh ■4 total, 2
! □5...(, Equipment measurement circuit, 30... Beer l
j, 32... raster deflection circuit, 40... him'-me i
ii djl? )II S4<:i'i, 41--
1 Run-CI/'ri'i"fi +'II, 42・
...Beam/l cutting circuit, 43... Planking Co. 1
(Control circuit, 50... Beam diameter control device t, 5) 1.
...beam diameter adjustment electrode, 52...beam diameter switching circuit,
60... li+'i image control device, 61... Electric p1 geometry, 62... Pattern data storage device, 63... Dot pattern null for drawing, 64... Drawing control circuit, 6
5...Synchronous circuit. Applicant's agent Ino II9 Qing Figure 3 Pattern Seki Figure 4 ABCDEFG Figure 5

Claims (1)

【特許請求の範囲】 1、描画部と非描画部とから構成される描画パターンを
パターン形成面に形成させる走査型ビーム描画方法であ
つて、 前記描画部上を走査するときは、第1のビーム量および
第1のビーム径で第1のビーム照射を行ない、 前記非描画部上を走査するときは、第2のビーム量およ
び第2のビーム径で第2のビーム照射を行ない、 前記第1のビーム照射と前記第2のビーム照射とを交互
に切換えながら走査を行なうことを特徴とする走査型ビ
ーム描画方法。 2、第1のビーム照射と第2のビーム照射の総和作用に
より近接効果に対する補正を行なうことを特徴とする特
許請求の範囲第1項記載の走査型ビーム描画方法。 3、第1のビーム量が第2のビーム量より大きく、第1
のビーム径が第2のビーム径より小さいことを特徴とす
る特許請求の範囲第2項記載の走査型ビーム描画方法。 4、描画部と非描画部とから構成される描画パターンを
パターン形成面に形成させる走査型ビーム描画装置であ
って、 描画用ビームを発生させるビーム発生装置と、前記パタ
ーン形成面を支持するパターン形成面支持装置と、 前記ビーム発生装置で発生したビームを、前記描画パタ
ーン形成面上で走査するビーム走査制御装置と、 前記ビーム発生装置で発生したビームの量を、前記描画
部上を走査するときは第1のビーム量とし、前記非描画
部上を走査するときは第2のビーム量とするビーム量制
御装置と、 前記ビーム発生装置で発生したビームの径を、前記描画
部上を走査するときは第1のビーム径とし、前記非描画
部上を走査するときは第2のビーム径とするビーム径制
御装置と、 をそなえることを特徴とする走査型ビーム描画装置。 5、描画用ビームが電子ビームであることを特徴とする
特許請求の範囲第4項記載の走査型ビーム描画装置。
[Scope of Claims] 1. A scanning beam lithography method for forming a drawing pattern consisting of a drawing area and a non-writing area on a pattern forming surface, wherein when scanning the drawing area, a first performing a first beam irradiation with a beam amount and a first beam diameter, and when scanning the non-drawing area, performing a second beam irradiation with a second beam amount and a second beam diameter; A scanning beam drawing method characterized in that scanning is performed while alternately switching between the first beam irradiation and the second beam irradiation. 2. The scanning beam drawing method according to claim 1, wherein the proximity effect is corrected by a summation effect of the first beam irradiation and the second beam irradiation. 3. The first beam amount is larger than the second beam amount, and the first beam amount is larger than the second beam amount.
3. The scanning beam drawing method according to claim 2, wherein the beam diameter is smaller than the second beam diameter. 4. A scanning beam lithography device that forms a drawing pattern on a pattern forming surface, which includes a drawing section and a non-writing section, comprising: a beam generating device that generates a drawing beam; and a pattern that supports the pattern forming surface. a forming surface support device; a beam scanning control device that scans the beam generated by the beam generating device on the drawing pattern forming surface; and a beam scanning control device that scans the beam generated by the beam generating device over the drawing section. a beam amount control device that sets the beam amount to a first beam amount when scanning the non-drawing portion and a second beam amount when scanning the non-drawing portion; a beam diameter control device that sets the beam diameter to a first beam diameter when scanning the non-writing portion, and sets the beam diameter to a second beam diameter when scanning the non-writing portion; 5. A scanning beam drawing apparatus according to claim 4, wherein the drawing beam is an electron beam.
JP59211099A 1984-10-08 1984-10-08 Method and device for drawing by scan-type beam Pending JPS6189629A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59211099A JPS6189629A (en) 1984-10-08 1984-10-08 Method and device for drawing by scan-type beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59211099A JPS6189629A (en) 1984-10-08 1984-10-08 Method and device for drawing by scan-type beam

Publications (1)

Publication Number Publication Date
JPS6189629A true JPS6189629A (en) 1986-05-07

Family

ID=16600390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59211099A Pending JPS6189629A (en) 1984-10-08 1984-10-08 Method and device for drawing by scan-type beam

Country Status (1)

Country Link
JP (1) JPS6189629A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0226015A (en) * 1988-07-15 1990-01-29 Toshiba Mach Co Ltd Method and apparatus for electron beam lithography

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0226015A (en) * 1988-07-15 1990-01-29 Toshiba Mach Co Ltd Method and apparatus for electron beam lithography

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