JPS6189889A - Optical information-recording medium - Google Patents
Optical information-recording mediumInfo
- Publication number
- JPS6189889A JPS6189889A JP59213003A JP21300384A JPS6189889A JP S6189889 A JPS6189889 A JP S6189889A JP 59213003 A JP59213003 A JP 59213003A JP 21300384 A JP21300384 A JP 21300384A JP S6189889 A JPS6189889 A JP S6189889A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- film
- thin
- thin film
- information
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野〕
本発明は光ビーム上用いて情報が記録され４元清報記録
媒体に関し、特に小さい光エネルギーにて情報を記録す
Ｚことができ芝記録薄膜に関すとものであえ。Detailed Description of the Invention (Industrial Field of Application) The present invention relates to a four-dimensional recording medium in which information is recorded using a light beam, and in particular to a recording medium in which information can be recorded with small optical energy. Regarding thin films.
（従来技術）
元情報記録媒体において、記＠薄膜に光ビームを照射し
、記録薄膜全構成す４材料の非晶質−結晶質伝移によ４
反射率変化を成起せしめ、情報を記録す４方法が知られ
てい４ｏこの記録膜材料としてはテルル低級酸化物Ｔｅ
Ｏｘ （０＜ Ｘ ＜ ２ ）や三セレン化アンチモン
５ｂｉＳｅ＋ｔが知られてい老が、元ビーム照射前後の
反射率変化量が小さかったシ、プしエネルギー吸収層全
積層す４必要があえ等の欠点があ芝。本出願人は、先に
か＼る欠点を解消すと材料としてテルル化ゲルマニウム
ＧｅＴｅ薄ｍ、？特願昭５９−１３７４５号により提案
し次〇（発明が解決しようとすえ問題点）
ＧｅＴｅは元ビーム照射前後の反射率変化量が大きくし
かも単層で記録膜を４成できと利点があ４が、非晶質−
結晶質転移音生じさせえには該薄膜を４４０°に以上に
なＡよう光エネルギーを与えと必要があった。そのため
高感度記録、例えばビデオ信号全実時間で記録すと際に
は、元ビーム装置は旨出力のものが必要になシ、記録再
生装置が高価にな４欠点があった。(Prior art) In the original information recording medium, the recording thin film is irradiated with a light beam, and the four materials that make up the entire recording thin film undergo amorphous-crystalline transition.
Four methods are known for recording information by causing a change in reflectance.4As the recording film material, lower tellurium oxide Te
Ox (0< Agashiba. The present applicant has proposed that germanium telluride GeTe thin film be used as a material to overcome the above drawbacks. It was proposed in Japanese Patent Application No. 59-13745 as follows (Problems that the invention attempts to solve) GeTe has the advantage of having a large change in reflectance before and after irradiation with the original beam and being able to form four recording films with a single layer. However, amorphous −
In order to generate the crystalline transition sound, it was necessary to apply light energy to the thin film at an angle of 440° or more. Therefore, for high-sensitivity recording, for example, when recording video signals in full real time, the original beam device must have a high output, and the recording and reproducing device is expensive.There are four drawbacks.
（問題点を解決すまための手段〕
本発明はＧｅＴｅ記録薄膜の上述の欠点を解消し、小さ
い元エネルギーにて情報全記録再生ず４ことので′ｆ！
Ｚ光情報記録媒体會提供することを目的とす４もので、
その特徴は記録簿；嘔がＧｅ、Ｓｂ及びＴｅｔ主成分と
すえ金属薄膜であり、Ｇｅ、Ｓｂ及びＴｅがＧｅｚ＝ｘ
ＳｂｘｘＴｅｚ＋ｓｘ （０（ｘ （１，０） ｆｘ
４ ＆Ｑ Ｋ （アトミックチンでの４ことにｉＪ ４
。(Means for Solving the Problems) The present invention eliminates the above-mentioned drawbacks of the GeTe recording thin film and makes it possible to record and reproduce all information with small source energy.
The purpose of providing Z-optical information recording media is 4.
Its characteristics are a record; the main components are Ge, Sb and Te, and the metal thin film; Ge, Sb and Te are Gez=x
SbxxTez+sx (0(x (1,0) fx
4 &Q K (4 in Atomic Chin and iJ 4
.
（実施しｌｌ） 以下実施例に従ってｉｆ細に説明す芝。(Implemented) The grass will be explained in detail below according to the examples.
元１ａ報記録媒体に使用されｊ ｉｔＥ板は熱伝導ＩＷ
が小さく、試泰＆派面が平滑でキズがｐないことが必要
で、又例えば元ビームｔ？基板１＝して記踪薄膜に）ｌ
ｊ（射する場合は該尤ビームに対して透過性でなければ
ならない。このような基板には記録再生レーザー元に対
し透明な合成樹脂、例えばポリメチルメタクリレート、
ポリカーボネート、ポリ塩化ビニル、ポリスルホンなど
や、ガラスが用いられ４０
１′Ｒ報記録４膜は前記基板上に接して設け４こともで
き乙が、前記基板上に低熱伝導物質からな石熱逼断性博
膜、前記基板上に存在するキズ全除去する高分子塗膜又
は元ビーム反射性薄膜會介して設け４こともできえ。金
属記ｇ薄模は公知の技術、例えば真空蒸着、スパッタリ
ング、イオンブレーティング等によって前記基板上に被
着させ４ことができ差。The jitE board used for the original 1a information recording medium is heat conductive IW.
It is necessary for the surface to be small, smooth and free of scratches, and for example, for ex-beam T? Substrate 1 = recorded on thin film)
(If the beam is to be emitted, it must be transparent to the beam.Such a substrate is made of a synthetic resin that is transparent to the recording/reproducing laser source, such as polymethyl methacrylate,
Polycarbonate, polyvinyl chloride, polysulfone, etc., or glass may be used.The film may be provided in contact with the substrate. It is also possible to provide a transparent film through a polymeric coating or a beam-reflecting thin film that completely removes any scratches existing on the substrate. The metal pattern can be deposited on the substrate by known techniques such as vacuum evaporation, sputtering, ion blasting, etc.
不実禰例においてはＭｉ前記記録Ｍ嗅は真空、嘘隋法に
て！夕板上に被着させた。真空４４法によりＧｅ１−ｘ
Ｓｂ、Ｔｅ （以下Ｇｅ５ｂＴｅと記載す４４合もめ４
）合金量１１へを作製するにはＧｅ５ｂＴｅ合金を蒸発
源とす４−元蒸発法あ４いはＧｅＴｅ 、 Ｓｂ、Ｔｅ
、 ｋｍ発弾とすえ二元同時蒸発法會哨い４ことができ
不発明にはいずれも有効であった。In the case of misrepresentation, Mi said the record M smell is vacuum, lie Sui method! It was applied to the top of the board. Ge1-x by vacuum 44 method
Sb, Te (hereinafter referred to as Ge5bTe)
) To produce alloys with an amount of 11, a 4-element evaporation method using a Ge5bTe alloy as an evaporation source or GeTe, Sb, Te
, km bullets and two-dimensional simultaneous evaporation method could be used, both of which were effective against the invention.
一元蒸発法に用いられる合成は以下のように叩要した軸
度９９．９９チ以上のＧｅＸＳｂ及びＴｅ ｆ所望の合
金組成とな４よう秤量し、石英ガラス管内に入れ真空封
止全行った。この石英ガラスｇを１０００゜Ｃ，５時間
加熱の後急冷してＧｅ５ｂＴｅ合金金得た。For the synthesis used in the one-dimensional evaporation method, GeXSb and Tef having a desired axiality of 99.99 degrees or more were weighed as shown below and placed in a quartz glass tube and sealed in vacuum. This quartz glass g was heated at 1000°C for 5 hours and then rapidly cooled to obtain a Ge5bTe alloy.
Ｇｅ５ｂＴｅ合金は、砥抗加熱法、ｄ子ビーム加熱失い
ずれの方法によっても蒸発させ４ことができを。Ge5bTe alloy can be vaporized by either the abrasive heating method or the d-beam heating method.
なお蒸発源合金組成と薄膜合金組成との差異は抵５〔加
熱法において少し認められたので、このこと全考慮して
前記合金組成を変化させ４ことによシ所望の合金組成を
持つＧｅ５ｂＴｅ薄膜全得Ｚことができ石。一方電子ビ
ーム加熱法においては蒸発源合金組成と薄膜合金組成と
の・尾＆は認められなかったＱ
仄に第１図は二元同時蒸発法を示す図で真空槽１１の中
に回転すえ基板ホルダー１２が設けられており、その下
方に基板１３’（ｉ７取シ付け４゜基＆１３の下方には
Ａ兄嫁１４および１５がありそれぞれにＧｅＴｅおよび
Ｓｂ、Ｔｅ、が斜線の如く充填さｎえ。蒸兄嫁１４およ
び１５は独立に制御可能な′ＪＬ源１６および１７？ｆ
−有し、蒸祐ＴＩＪｊ１４および１５に供給され石寛力
金変化さぜ疋ことにより、作製されふＧｅ５ｂＴｅ薄膜
中のＧｅとｓｂの比を変化させ所望の曾金組成會もつＧ
ｅ５ｂＴｅ薄膜？得た。なお合金組成定量は螢光Ｘ繊分
析ｖｉ、置會使用して行った。It should be noted that a slight difference between the evaporation source alloy composition and the thin film alloy composition was observed in the heating method, so taking this into account, the alloy composition was changed to produce a Ge5bTe thin film having the desired alloy composition. A stone that can get all Z. On the other hand, in the electron beam heating method, no difference between the evaporation source alloy composition and the thin film alloy composition was observed. A holder 12 is provided, and below it there is a substrate 13' (i7 mounting 4° base) and below the holder 13 there are A-sisters 14 and 15, each filled with GeTe, Sb, and Te as indicated by diagonal lines. Steaming brothers 14 and 15 are independently controllable'JL sources 16 and 17?f
- The ratio of Ge to sb in the Ge5bTe thin film can be changed by changing the Ge5bTe thin film to obtain the desired solenoid composition.
e5bTe thin film? Obtained. The alloy composition was determined using fluorescent X-fiber analysis VI.
第２図Ｊ、＠ｉ２１は、Ｇｅ 、−ｘＳｂ 、、Ｔｅ
１＋、 、合金量ｄｌｃおいて１＊々のＸの値の薄膜を
作製し非結晶−結晶、転移点を測定した結果であ／−ｏ
測定はガラス、基板上にＧｅ５ｂＴｅ合乍薄膜を被着さ
せた試料を加熱し、薄膜の反射率あＡい￥ｉ透過率の光
学的性質が犬きく変化する点を転移点とした。又、第２
図実線２２は、基板上に被着さｉたＧｅ５ｂＴｅの薄膜
に、波長λ＝８３０ｎｍの半尋体レーザー光を２０Ｏｎ
ｓ間照対した時、該Ｇｅ５ｂＴｅ薄漠のレーザー光被照
射部の反射率を、大きく変化させえに必要なレーザーパ
ワーの相対値？示す。第２図に見られ４ごと＜ Ｇｅ
ｘ響ｂｔｘＴｔＰ膜はＧｅＴｅ薄膜に出校す４ならば、
Ｇｅ１−Ｐ＠ｘＴｅ １ ＋ｔ ｘ琴膜中のＸの値が大
きくなえにつれ非結晶−結晶転移点が下がシ、；列えば
ｘ ＝ ０３で４３０ Ｋ。Figure 2 J, @i21 is Ge, -xSb,, Te
This is the result of preparing thin films with X values of 1* and 1+, , alloy amount dlc, and measuring the amorphous-crystal transition point /-o
In the measurement, a sample in which a Ge5bTe composite thin film was deposited on a glass substrate was heated, and the transition point was defined as the point at which the optical properties of the thin film's reflectance and transmittance significantly changed. Also, the second
A solid line 22 in the figure shows that a half-body laser beam with a wavelength λ = 830 nm is applied to a thin film of Ge5bTe deposited on a substrate for 20 hours.
What is the relative value of the laser power required to significantly change the reflectance of the laser beam irradiated area of the Ge5bTe desert when compared for s? show. As seen in Figure 2, every 4 < Ge
If the x-btxTtP film is applied to the GeTe thin film, then
Ge1-P@xTe1+tx As the value of
０．６で３８８にとなり、清報を記録す乙に心安な光エ
ネルギーはｘ＝０３のとき８８％、ｘ＝０．６のときハ
ロ０％であり、ＧｅＴｅ ｉｉｉ Ａ’Ａに比しぞれぞ
ｆｉ１２’％、４０％の元エネルギーを節約できＺＯ
杢渠施り１１においてはＧｅ５ｂＴｅ曾釜薄嗅は真空蒸
着法にて作製されたが、該Ｇｅ５ｂＴｅ ？ａ膜は真空
蒸着法に限らず公知の技術であとスパッタリング法で作
製しても同様の結果が得られたθただし、この場合Ｇｅ
５ｂＴｅ４１淋の非侍晶−結晶転移点は１．に空蒸着法
に比してｃｒｅｌ−ｘｓｂ、’ｒｅ、、ｘｔＩＮ中のＸ
のイ直にかかわらず２０〜４０°に尚くなった。しかし
スパッタ法によりｔ’ｊ’ＮしたＧｅＴｅ ｉｈ ｉ４
（’） ”ｒｘ ’Ｅ’点け４８０°に−ｔ’あつｔ
ので、Ｇｅ ｚ＝Ｘｓ ｂ ｔ ｘＴｅ １＋ｔｘ Ｎ
’Ａの転移点？ｉｘの滅にか＼わらずＧｅＴｅ４１漠
の転移点より低く、ｘの値の増大と共に転移点が下が４
効来は真空蒸着法を用いた前記夷、・揖１列と同じであ
った。又、前記実流ｖ！ＩＪは元ビームとして一４″導
体レーザーを用いたが、元ビームは半身体レーサーに１
゛艮主さ、ｔ″Ｌをことな（、Ｈｅ−Ｎｅレーザー、Ａ
ｒレーザー等のレーザー元、キャノンランプ、タングス
テンランプを用いることかでさ４０なぜならＧｅ５ｂＴ
ｅ ｉ４ ｇ ｒｒｉＧｅＴｅ薄膜と同様に光学的１生
質の？Ｂｉ長依存注がゆるやかで、該薄膜の膜厚乞記録
元ビーム波長に応じて最適化でき２からでめ４゜
（発明の効果）
以上詳述したように、基体と該基体上に形成された１博
膜會肩し、該薄膜へ元ビームを照射し情報。0.6 is 388, and the light energy that is safe for recording news is 88% when x = 03 and halo 0% when x = 0.6, which is much better than GeTe iii A'A. In 11, Ge5bTe sokama was fabricated by vacuum evaporation method, but the Ge5bTe? Similar results were obtained when the a film was produced not only by vacuum evaporation but also by sputtering using known techniques.However, in this case, Ge
The non-samurai-crystal transition point of 5bTe41 is 1. X in crel-xsb,'re,,xtIN compared to empty deposition method.
The angle was still between 20 and 40 degrees regardless of the angle of the angle. However, GeTe ih i4 which was t'j'N by sputtering method
(') ”rx 'E' turn on 480° -t'
Therefore, Ge z=Xs b t xTe 1+tx N
'A's transition point? Regardless of the destruction of ix, it is lower than the transition point of GeTe41, and as the value of x increases, the transition point decreases to 4.
The effectiveness was the same as that of the above-mentioned method using the vacuum evaporation method. Also, the actual flow v! IJ used a 14" conductor laser as the source beam, but the source beam was 14" for the half-body racer.
He-Ne laser, A
It is possible to use a laser source such as an r laser, a Canon lamp, or a tungsten lamp.40 Because Ge5bT
e i4 g rriIs the optical quality similar to the GeTe thin film? The Bi length dependence is gentle, and the thickness of the thin film can be optimized according to the wavelength of the recording source beam. At the same time, the thin film was irradiated with the original beam and information was collected.
を記録するｊｔ、情報配球媒体において、上記薄）漠が
Ｇｅ、 Ｓｂ及びＴｅを主成分とすふ薄膜でめ９、該Ｇ
ｅＳｂ、Ｔｅは、Ｇｅ ｚ−ｚＳ’ Ｋ ｚＴｅｘ＋ｉ
Ｘな７：組成であることを寺゛ｉとするｔ債＠記ｙ＊
媒体は小さな光工不ルだ−にて情報音ト己徐す４ことが
でき、安１曲なＡ己録書生装置（（て茜感度記浄を実現
丁とことができる０In the information distribution medium for recording information, the above-mentioned thin film is made of a thin film mainly composed of Ge, Sb and Te.
eSb, Te are Ge z-zS' K zTex+i
X7: T-bonds with composition as a temple *i*
The medium is a small optical device that can self-absorb information and sound, and can be used as an inexpensive self-recording device ((Akane Sensitivity Recording can be realized).
’：ｇ ｉ図は不癒明の元情報記：；謙媒体ケ作！ツす
４′漠責のＩ ＩＩ／Ｉｌを示し、第２図は本店間によ
え２摩・□葉体の組成と非晶質−倍品質宏ｆ多点及び７
婦光エネルギーの関係に示す（２）であ７叱。
１１−−−真２ （１１３ａ噛＊ 基板１４．１５・・
−蒸発源':g i diagram is a record of the original information of the unhealed person: ; Made by Kenjika! Figure 2 shows the composition of the leaflet and the amorphous-double quality Hirof multipoint and 7.
There are 7 points in (2) shown in the relationship between feminine light energy. 11---True 2 (113a bit* Board 14.15...
- evaporation source
Claims (1)
ームを照射し情報を記録する光情報記録媒体において、
上記薄膜がゲルマニウム、アンチモン、テルルを主成分
としＧｅ＿１＿−＿ｘＳｂ＿λ＿ｘＴｅ＿１＿＋＿λ＿
ｘ（０＜ｘ＜１．０）なる組成であることを特徴とする
光情報記録媒体。An optical information recording medium that has a base and a thin film formed on the base, and records information by irradiating the thin film with a light beam,
The above thin film mainly contains germanium, antimony, and tellurium, and Ge_1_−_xSb_λ_xTe_1_+_λ_
An optical information recording medium characterized by having a composition x (0<x<1.0).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59213003A JPS6189889A (en) | 1984-10-11 | 1984-10-11 | Optical information-recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59213003A JPS6189889A (en) | 1984-10-11 | 1984-10-11 | Optical information-recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6189889A true JPS6189889A (en) | 1986-05-08 |
| JPH0473387B2 JPH0473387B2 (en) | 1992-11-20 |
Family
ID=16631870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59213003A Granted JPS6189889A (en) | 1984-10-11 | 1984-10-11 | Optical information-recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6189889A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6253886A (en) * | 1984-12-26 | 1987-03-09 | Asahi Chem Ind Co Ltd | Information-recording medium |
| JPS62152786A (en) * | 1985-12-27 | 1987-07-07 | Hitachi Ltd | phase change recording medium |
| JPS63225934A (en) * | 1986-09-22 | 1988-09-20 | Matsushita Electric Ind Co Ltd | optical information recording medium |
| JPH01116937A (en) * | 1987-10-28 | 1989-05-09 | Matsushita Electric Ind Co Ltd | Optical information recording/reproducing/erasing member |
| US5015548A (en) * | 1988-12-19 | 1991-05-14 | Eastman Kodak Company | Erasable phase change optical recording elements and methods |
| JPH03178480A (en) * | 1985-12-25 | 1991-08-02 | Asahi Chem Ind Co Ltd | Material for information recording |
| US5268254A (en) * | 1989-02-28 | 1993-12-07 | Fuji Xerox Co., Ltd. | Optical recording medium |
| US5278011A (en) * | 1985-09-25 | 1994-01-11 | Matsushita Electric Industrial Co., Ltd. | Reversible optical information-recording medium |
| EP0897177A1 (en) * | 1997-08-12 | 1999-02-17 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, method for producing the same, and method for recording and reproducing optical information |
| US6268034B1 (en) | 1998-08-05 | 2001-07-31 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium and method for producing the same, method for recording and reproducing information thereon and recording/reproducing apparatus |
| US6343062B1 (en) | 1997-09-26 | 2002-01-29 | Matsushita Electric Industrial Co., Ltd | Optical disk device and optical disk for recording and reproducing high-density signals |
| US6388984B2 (en) | 1997-08-28 | 2002-05-14 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium and its recording and reproducing method |
| US6821707B2 (en) | 1996-03-11 | 2004-11-23 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52115202A (en) * | 1976-03-24 | 1977-09-27 | Hitachi Ltd | Recording member for information |
| JPS53141040A (en) * | 1977-05-16 | 1978-12-08 | Hitachi Ltd | Information recording material |
| JPS543725A (en) * | 1977-06-10 | 1979-01-12 | Kubota Ltd | Front axle structure for tractor |
| JPS5740766A (en) * | 1979-09-10 | 1982-03-06 | Philips Nv | Optical recording disc |
| JPS58161161A (en) * | 1982-03-19 | 1983-09-24 | Hitachi Ltd | Recording member |
| JPS6048397A (en) * | 1983-08-29 | 1985-03-16 | Nippon Telegr & Teleph Corp <Ntt> | Optical recording medium and preparation thereof |
-
1984
- 1984-10-11 JP JP59213003A patent/JPS6189889A/en active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52115202A (en) * | 1976-03-24 | 1977-09-27 | Hitachi Ltd | Recording member for information |
| JPS53141040A (en) * | 1977-05-16 | 1978-12-08 | Hitachi Ltd | Information recording material |
| JPS543725A (en) * | 1977-06-10 | 1979-01-12 | Kubota Ltd | Front axle structure for tractor |
| JPS5740766A (en) * | 1979-09-10 | 1982-03-06 | Philips Nv | Optical recording disc |
| JPS58161161A (en) * | 1982-03-19 | 1983-09-24 | Hitachi Ltd | Recording member |
| JPS6048397A (en) * | 1983-08-29 | 1985-03-16 | Nippon Telegr & Teleph Corp <Ntt> | Optical recording medium and preparation thereof |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6253886A (en) * | 1984-12-26 | 1987-03-09 | Asahi Chem Ind Co Ltd | Information-recording medium |
| US5278011A (en) * | 1985-09-25 | 1994-01-11 | Matsushita Electric Industrial Co., Ltd. | Reversible optical information-recording medium |
| JPH03178480A (en) * | 1985-12-25 | 1991-08-02 | Asahi Chem Ind Co Ltd | Material for information recording |
| JPS62152786A (en) * | 1985-12-27 | 1987-07-07 | Hitachi Ltd | phase change recording medium |
| JPS63225934A (en) * | 1986-09-22 | 1988-09-20 | Matsushita Electric Ind Co Ltd | optical information recording medium |
| JPH0845074A (en) * | 1986-09-22 | 1996-02-16 | Matsushita Electric Ind Co Ltd | Optical reversible recording method |
| JPH01116937A (en) * | 1987-10-28 | 1989-05-09 | Matsushita Electric Ind Co Ltd | Optical information recording/reproducing/erasing member |
| US5024910A (en) * | 1987-10-28 | 1991-06-18 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium |
| US5015548A (en) * | 1988-12-19 | 1991-05-14 | Eastman Kodak Company | Erasable phase change optical recording elements and methods |
| US5268254A (en) * | 1989-02-28 | 1993-12-07 | Fuji Xerox Co., Ltd. | Optical recording medium |
| US6821707B2 (en) | 1996-03-11 | 2004-11-23 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information |
| US7037413B1 (en) | 1996-03-11 | 2006-05-02 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information |
| EP0897177A1 (en) * | 1997-08-12 | 1999-02-17 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, method for producing the same, and method for recording and reproducing optical information |
| US6503690B1 (en) | 1997-08-12 | 2003-01-07 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, method for producing the same, and method for recording and reproducing optical information |
| US6388984B2 (en) | 1997-08-28 | 2002-05-14 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium and its recording and reproducing method |
| US6343062B1 (en) | 1997-09-26 | 2002-01-29 | Matsushita Electric Industrial Co., Ltd | Optical disk device and optical disk for recording and reproducing high-density signals |
| US6268034B1 (en) | 1998-08-05 | 2001-07-31 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium and method for producing the same, method for recording and reproducing information thereon and recording/reproducing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0473387B2 (en) | 1992-11-20 |
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