JPS6199645A - Copper alloy for bonding of semiconductor device - Google Patents

Copper alloy for bonding of semiconductor device

Info

Publication number
JPS6199645A
JPS6199645A JP59221482A JP22148284A JPS6199645A JP S6199645 A JPS6199645 A JP S6199645A JP 59221482 A JP59221482 A JP 59221482A JP 22148284 A JP22148284 A JP 22148284A JP S6199645 A JPS6199645 A JP S6199645A
Authority
JP
Japan
Prior art keywords
bonding
wire
copper wire
elements
ball
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59221482A
Other languages
Japanese (ja)
Inventor
Yasuhiko Yoshinaga
吉永　保彦
Kenichi Kurihara
健一 栗原
Koichiro Mukoyama
向山　光一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Electronics Co Ltd
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP59221482A priority Critical patent/JPS6199645A/en
Publication of JPS6199645A publication Critical patent/JPS6199645A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To obtain a copper wire for bonding which is useful and utilizable as a substitute for a gold wire, by incorporating trace amounts of 1 or >=2 kinds among Ti, Cr, Mn, Fe, Ni, and Co to high-purity Cu. CONSTITUTION:Among the elements in group IV of the periodic table, 1 of >=2 kinds among, by weight, 5-50ppm Ti, 5-50ppm Cr, 5-50ppm Fe, 10-100ppm to Co having a high purity of >=99.99%. Ti, Fe, Ni, and Co are useful for the improvement of thermal resistance, and Mn and Cr are also useful for the improvement of corrosion resistance.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は半導体のチップ電極と外部リード部とを接続す
るために使用するワイヤボンディング用銅線に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a copper wire for wire bonding used to connect a semiconductor chip electrode and an external lead portion.

〈従来の技術〉 従来、ボンディング用線として、もっばら金（Ａｕ　）
線あるい（，１アルミニユムｌ）線が使用されているが
、１１）近、金線の代替として経済性に右利な銅線の使
用が検討されているも未だ実用段階に至っていない。<Conventional technology> Conventionally, gold (Au) was used as bonding wire.
(11) Recently, the use of economically advantageous copper wire as an alternative to gold wire has been considered, but it has not yet reached the practical stage.

一般にボンディング用線に要求される要素として、■引
張り強さが大きいこと、■高温強度が大きいこと、■塑
性変形による熱圧着及び超音波ボンディングが可能なこ
と、■ボール形状が真球に近く且つ−・定していること
、■ボンディング後の接合強度が大きいことが最少限必
要である。In general, the elements required for bonding wire are: ■ high tensile strength, ■ high high-temperature strength, ■ ability to perform thermocompression bonding and ultrasonic bonding through plastic deformation, and ■ ball shape close to a true sphere. - It is minimum necessary that the bonding strength after bonding be high.

しかるに従来の銅線は導電材としての用途が一般的であ
り、使用される銅の純度も９９．９％、高くても９９．
９５〜９９．９６％までであり、金線に較べＣ引張り強
度が大きいものの硬すぎてボンデラングに供した場合に
チップ割れを起したり、ネック切れの原因となり又、接
合強度が小さく使用し得ない。However, conventional copper wire is generally used as a conductive material, and the purity of the copper used is 99.9%, or at most 99.9%.
95 to 99.96%, and although it has a higher C tensile strength than gold wire, it is too hard and may cause chip cracking or neck breakage when used in a bonderung, and its bonding strength is low, making it unsuitable for use. do not have.

さらに、上記従来の銅線は表面醇化を起しやりいととも
に耐蝕１１−が小さく耐熱性に劣る欠点を有し、そのた
めボンディング時のボール形状がいびつになりやすいと
ともに接合強度が低下する不具合を生じ、前記五要素を
満足させることができないものであった。Furthermore, the above-mentioned conventional copper wire has the drawback of easily causing surface melting, low corrosion resistance, and poor heat resistance, resulting in problems such as the ball shape being easily distorted during bonding and the bonding strength being reduced. , the above five factors could not be satisfied.

〈発明の目的〉 本発明は上記従来事情に鑑み、ボンディング用に要求さ
れる前記五要素を満足させ、しかも耐熱性及び耐蝕性を
向−トさせ、導電性を維持させて金線の代替として有用
且つ実用可能なボンディング用銅線を提供せんとするこ
とを目的とする。<Object of the Invention> In view of the above-mentioned conventional circumstances, the present invention satisfies the above five elements required for bonding, improves heat resistance and corrosion resistance, maintains conductivity, and provides a wire as a substitute for gold wire. The object is to provide a useful and practical copper wire for bonding.

〈発明の構成〉 斯る本発明のボンディング用銅線は、９９゜９９％以上
の高純度銅（ＣＬＬ）に、第４周期元素中より５〜５０
１）ｌ）Ｉｎ　ｗｔ％のチタン（Ｔｉ）、５〜５０ｐｐ
Ｈｗｔ％のクロム（Ｃｒ）　、　５〜５０１）０１１ｗ
ｔ％のマンガン（Ｍｎ　）　、　５〜５０１）ｐＩ　ｗ
ｔ％の’　　　　　ＩＸ（Ｆ。）　、　１０〜１００１
）ｐｍ　ｗｔ％＋７）＝ッケｊｌ、＝（Ｎｉ）　、　１
０〜１００ｐｐｉ　ｗｔ％のコバルト（Ｇｏ）の１種又
は２種以上を５〜１５０ｐｐｍ　ｗｔ％含有ヒしめたこ
とをド＋ｍとする。<Structure of the Invention> The bonding copper wire of the present invention is made of high purity copper (CLL) of 99.99% or more and 5 to 50% of the fourth period elements.
1) l) In wt% titanium (Ti), 5-50pp
Hwt% chromium (Cr), 5~501)011w
t% manganese (Mn), 5-501) pI w
t%' IX(F.), 10~1001
)pm wt%+7)=kkejl,=(Ni), 1
Do+m means that one or more types of cobalt (Go) of 0 to 100 ppi wt% is contained in an amount of 5 to 150 ppm wt%.

本発明銅線はへを９９．９９％以上の高純度とし、それ
に前記元ＮＴ　ｉ　、　Ｃｒ、　１ＶＩｎ　、　Ｆｅ、
　Ｎｊ。The copper wire of the present invention has a high purity of 99.99% or more, and contains the elements NT i , Cr, 1VIn, Fe,
Nj.

らの１種又は２←ト以上を含有せしめることによって適
度な硬さくＨｖ：３５〜５５）が得られ、ボンディング
１５におけるチップ割れ（シリコンチップのひび割れ）
やネック切れ（ボールとワイヤの境界部分の切断）を防
止するとともにボールの潰れ幅を一定にする。By containing one or more of these, a suitable hardness (Hv: 35 to 55) can be obtained, and chip cracking in bonding 15 (cracking of silicon chips) can be obtained.
This prevents neck breakage (cutting at the boundary between the ball and the wire) and keeps the ball flattened to a constant width.

一ヒ記元素Ｔ　ｉ　、　Ｃｒ、　Ｍｎ　、　Ｆｅ、　Ｎ
ｉ、　Ｃｏは何れら銅線の耐熱性を改善して結晶粗大化
を防止するとともに結晶粒開破１ｇ１（ネック切れの原
因）を防止し、又、銅線の耐蝕性を改善するものである
が、とくにイの特性を区分けするならば、Ｔｉ　、　Ｆ
ｅ、　ＮＬ、　Ｃｏは耐熱性の改善に、１ｙｌｎ、Ｃｒ
は耐蝕性の改善に有用である。Elements Ti, Cr, Mn, Fe, N
Both i and Co improve the heat resistance of the copper wire, prevent crystal coarsening, prevent crystal grain rupture 1g1 (a cause of neck breakage), and improve the corrosion resistance of the copper wire. However, if we specifically distinguish the characteristics of A, then Ti, F
e, NL, Co to improve heat resistance, 1yln, Cr
is useful for improving corrosion resistance.

又、上記Ｔｉ　、　Ｃｒ、　Ｍｎ　、　ＦｅはＮＬ、Ｇ
ｏに較べて、伍に苅りる固溶限が小さいので、その含有
■が、５ＤＤｍｗｔ％以上であれば、前記効果が現われ
、Ｎ１、らはその含有量１　Ｑｐｐａ＋　ｗｔ％以上で
効果が現われる。Moreover, the above Ti, Cr, Mn, Fe are NL, G
Since the solid solubility limit is smaller than that of O, the above effect appears when the content of N is 5 DD mwt% or more, and the effect appears when the content of N1, etc. is 1 Qppa+ wt% or more.

しかし、上記元素は夫々の上限値以上を含有させた場合
に硬くなりすぎてボンディング特性が低下するとともに
導電性を維持し得なくなって信頼性に劣り、前記元素を
２種以上含有往しめる場合には、その含有ｆｆ１１５０
ｐｐｍｗｔ％を越えると前記欠点が現われる。However, when the above elements are contained in amounts exceeding their respective upper limits, the bonding properties become too hard, and the conductivity cannot be maintained, resulting in poor reliability. is its content ff1150
When the amount exceeds ppmwt%, the above-mentioned drawbacks appear.

〈実施例〉 本発明実施品の各試料は９９．９９９％偽にＴｉ、Ｃｒ
、〜ｌｎ　、　Ｆｉｌ、　ＮＬ、　Ｃｏの１種又は２種
以上を添加して溶解鋳造し、線引加工と中間熱処理とを
くり返して直径２５μの伝線に仕しげたものである。<Example> Each sample of the product of the present invention was 99.999% fake with Ti and Cr.
, ~ln, Fil, NL, and Co, one or more of them are added and melted and cast, and wire drawing and intermediate heat treatment are repeated to form a wire with a diameter of 25μ.

各試料の添加元素及び添加ｍを次表（１）に示す。The added elements and addition m of each sample are shown in the following table (1).

尚、比較量の試料Ｎ００１は９９．９％の純銅線、Ｎｏ
、２は９９．９９９％の純銅線、Ｎｏ、３は３ｅを５ｐ
Ｉ）ｎｗｔ％含有せしめた金線である。Incidentally, the comparative sample No. 001 is a 99.9% pure copper wire, No.
, 2 is 99.999% pure copper wire, No. 3 is 3e 5p
I) Gold wire containing nwt%.

表　　　　　（１） 上記各試料をもって、その機械的性質、ボンディング特
性を測定した結果を次表（２）に示す。Table (1) The results of measuring the mechanical properties and bonding properties of each of the above samples are shown in Table (2) below.

尚、ボンディングは熱圧着、超音波併用方式表（２）中
において、ボール形状の「良」とは臭円状態、「可」と
は若干いびつが生じる状態、「不良」とはいびつが大き
くボール形状が定まらない状態である。In addition, bonding is a combination of thermocompression bonding and ultrasonic waves. In Table (2), "Good" for the ball shape means that the ball has an odor, "fair" means that the ball is slightly distorted, and "poor" means that the ball has a large distortion. The shape is undefined.

また、ボンデＣフグ後の接合強度について、チップ割れ
を起したものにあっては測定の対采とせザ、表中に１−
」をもって示した。In addition, regarding the bonding strength after Bonde C puffing, if the chip has cracked, please refer to the table for measurement.
”.

（次頁に続く） 上記表（２）の測定結果よりみて、Ｔｉ、Ｃｒ。(continued on next page) From the measurement results in Table (2) above, Ti and Cr.

Ｍｎ、Ｆｅはその含有量を５〜５０ＤＤｍｗｔ％、陳。The content of Mn and Fe is 5~50DDmwt%.

６はその含有ｍを１０〜１０　ｏｐｐｍ　ｗｔ％とし、
２種以上を含有させる場合は、その含有量上限を１５０
ＤＤｍ　ｗｔ％とした。6 has a content m of 10 to 10 oppm wt%,
When containing two or more types, the upper limit of the content is 150
DDm wt%.

手続補正書 昭和５９年１１月　５６ ２、発明の名称 半導体素子のボンディング用銅線 ３、補正をする者 事件との関係　　　特　許　出　願　人氏名（名称）　
　　田中電子工業株式会社４、代理人 昭和　　年　　月　　日 補　　正　　明　　細　　書 １、発明の名称 半導体素子のボンディング用銅線 ２、特許請求の範囲 ９９．９９％以上の高純度銅（ｃＩＬ）ニ、第４周期元
素中より５〜５０重量　ｐｐｍのチタン（Ｔｉ　）　、
　５〜５０１１ｆｆｉｌ）ｌ）Ｉのクロム（Ｃｒ）。Procedural amendment November 1980 56 2. Name of the invention Copper wire for bonding semiconductor devices 3. Relationship with the case of the person making the amendment Patent applicant name (name)
Tanaka Denshi Kogyo Co., Ltd. 4, Agent Showa year, month, date, amended specification 1, Title of the invention: Copper wire for bonding semiconductor devices 2, Claims: High purity copper (cIL) of 99.99% or more, 5 to 50 ppm by weight of titanium (Ti) from the fourth period elements,
5-5011ffil) l) Chromium (Cr) of I.

５〜５０重１１１）ｌ）ｌのマンガン（Ｍｎ’）、５〜
５０１ｆｆｉｐｐｍの鉄（Ｆｅ）　、　１０〜１００ｔ
ｌｉｆｆｉ１）１１ｍのニッケル（Ｎｉ）、１０〜１０
０１はＤｌｌのコバルト（Ｃｏ）の１種又は２種以上を
５〜１５０重ｌｐｐ■含有せしめたことを特徴どする半
導体素子のボンディング用銅線。5 to 50 weight 111) l) l manganese (Mn'), 5 to
501ffippm iron (Fe), 10-100t
liffi1) 11m nickel (Ni), 10-10
01 is a copper wire for bonding a semiconductor device, characterized in that it contains one or more types of cobalt (Co) Dll in an amount of 5 to 150 weight lpp.

３、発明の詳細な説明 〈産業上の利用分野〉 本発明は半導体のチップ電極と外部リード部とを接続す
るために使用するワイヤボンディング用銅線に関する。3. Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a copper wire for wire bonding used to connect a semiconductor chip electrode and an external lead portion.

〈従来の技術〉 従来、ボンディング用線として、もっばら金（△Ｕ）線
あるい【よアルミニュムｌ）線が使用されているが、最
近、金線の代替として経済性に右利な銅線の使用が検討
されているも未だ実用段階に至っていない。<Prior art> Traditionally, gold (△U) wire or aluminum wire has been used as the bonding wire, but recently copper wire has been used as an economical alternative to gold wire. Although its use is being considered, it has not yet reached the practical stage.

一般にボンデ−ｆング用線に要求される要素として、■
引張り強さが大きいこと、■高温強度が大きいこと、（
１）塑性変形による熱圧着及び超ａ波ボンディングが可
能なこと、■ボール形状が真球に近く且つ一定している
こと、■ボンディング侵の接合強度が大きいことが最少
限必要である。In general, the elements required for bonding wires are:
High tensile strength, ■High high temperature strength, (
1) The minimum requirements are that thermocompression bonding and ultra-A wave bonding using plastic deformation are possible, (1) the ball shape is close to a perfect sphere and is constant, and (2) the bonding strength during bonding is high.

しかるに従来の銅線は導電材としての用途が一般的であ
り、便用される銅の純度も９９．９％、高くても９９．
９５〜９９．９６％までであり、金線に較べて引張り強
度が大きいものの硬すぎてボンデラングに供した場合に
チップ割れを起したり、ネック切れの原因となり又、接
合強度が小さく使用し１９ない。However, conventional copper wire is generally used as a conductive material, and the purity of the commonly used copper is 99.9%, or at most 99.9%.
Although it has a tensile strength of 95 to 99.96% compared to gold wire, it is too hard and may cause chip cracking or neck breakage when used in bonderungs, and its bonding strength is low. do not have.

さらに、上記従来の銅線は表面酸化を起しゃずいととも
に耐蝕性が小さく耐熱性に劣る欠点を有し、そのためボ
ンディング時のボール形状がいびつになりやすいととも
に接合強度が低下する不具合を生じ、前記五要素を満足
させることができないものであった。Furthermore, the above-mentioned conventional copper wire has the drawbacks of not only being resistant to surface oxidation but also having low corrosion resistance and poor heat resistance.As a result, the ball shape during bonding tends to be distorted and the bonding strength decreases. It was not possible to satisfy the five elements.

〈発明の目的〉 本発明は上記従来事情に鑑み、ボンディング用に要求さ
れる前記五要素を満足させ、しかも耐熱性及び耐蝕性を
向上させ、導電性を紺持させて金線の代替として有用且
つ実用可能なボンディング用銅線を提供せんとすること
を目的とする。<Object of the Invention> In view of the above-mentioned conventional circumstances, the present invention satisfies the above five elements required for bonding, improves heat resistance and corrosion resistance, maintains conductivity, and is useful as a substitute for gold wire. Another object of the present invention is to provide a practical copper wire for bonding.

〈発明の構成〉 断る本発明のボンディング用銅線は、９９゜９９％以上
の高純度銅（（Ａ）に、第４周期元素中より５〜５０重
ｆｉ　ｐｐｍのチタン（Ｔｉ　）、　５〜５０１ｍｐｐ
ｍのクロム（Ｃｒ　）　、　５〜５０　ｆｌ　ｌｌｐｐ
ｍのマンガン（Ｍｎ　）　、　５〜５０ｆｆ！ｆｆ１ｐ
ｐｓの鉄（Ｆｅ）、１０〜１００重１　ｐｐｍのニッケ
ル（Ｎｉ）、１０〜１００重Ｗｉ　ｐｐｍのコバルト（
Ｃｏ）の１種又は２種以上を５〜１５０１ｆｆｉｐｐ−
含有せしめたことを特徴とする。<Structure of the Invention> The bonding copper wire of the present invention is made of high purity copper of 99.99% or more ((A), titanium (Ti) of 5 to 50 ppm by weight from among the fourth period elements, and 5 to 501mpp
m chromium (Cr), 5-50 fl llpp
m manganese (Mn), 5-50ff! ff1p
PS iron (Fe), 10~100w 1 ppm nickel (Ni), 10~100w Wi ppm cobalt (
5 to 1501ffipp- of one or more of Co)
It is characterized by containing.

本発明銅線は伍を９９−９９％以上の高純度とし、それ
に前記元素ＴＩ　、　Ｏｒ、　Ｍｎ　、　Ｆｓ、　Ｎｉ
。The copper wire of the present invention has a high purity of 99-99% or more, and contains the above elements TI, Or, Mn, Fs, Ni.
.

缶の１１ｍ又は２ＭＩＸ上を含有せしめることによって
適度な硬さく１−１ｖ：３５〜５５）が得られ、ボンデ
ィング時に櫂１３けるチップ割れ（シリコンチップのひ
び割れ）やネック切れ（ボールとワイヤの境界部分の切
断）を防止するとともにボールの潰れ幅を一定にする。By containing 11m or 2MIX of the can, a suitable hardness (1-1v: 35 to 55) can be obtained, and it will prevent chip cracks (cracks in the silicon chip) and neck breaks (at the boundary between the ball and the wire) caused by the paddle during bonding. This prevents the ball from being cut (cutting) and makes the collapse width of the ball constant.

上記元素７　ｉ　、　Ｃｒ、　Ｍｎ　、　Ｆａ、　ＮＬ
、　Ｇｏは何れもｒｆ４線の耐熱性を改善して結晶粗大
化を防止するとともに結晶粒界破断（ネック切れの原因
）を防止し、又、銅線の耐蝕性を改善するものであるが
、とくにその特性を区分けするならば、Ｔｉ　、　Ｆｅ
、　ＮＬ、Ｇｏは耐熱性の改善に、Ｍｎ、Ｃｒは耐蝕性
の改善にイｊ用である。The above elements 7 i, Cr, Mn, Fa, NL
, Go improves the heat resistance of the RF4 wire, prevents crystal coarsening, prevents grain boundary fracture (the cause of neck breakage), and also improves the corrosion resistance of the copper wire. In particular, if we classify their characteristics, Ti, Fe
, NL, and Go are used to improve heat resistance, and Mn and Cr are used to improve corrosion resistance.

又、上記Ｔｉ　、　Ｃｒ、　Ｍｎ　、　ＦａはＮＬ、Ｇ
ｏに較べて、偽に対する固溶限が小さいので、その含有
ａが、５１！１ｐｐ−以上であれば、前記効果が現われ
、Ｎｉ、Ｃｏはその含有聞１０重ｆｆｉ　ｐｐｍ以上で
効果が現われる。Moreover, the above Ti, Cr, Mn, Fa are NL, G
Since the solid solubility limit for pseudo is smaller than that of o, the above effect appears when the content a is 51!1 ppm or more, and the effect appears when the content of Ni and Co is 10 ppm or more.

しかし、上記元素は夫々の上限値以上を含有させた場合
に硬くなりすぎてボンディング特性が低下するとともに
ｌ１ｍ性を維持し得なくなって信頼性に劣り、前記元素
を２種以上含有せしめる場合には、その含有■１５０重
量ｐｐｍを越えると前記欠点が現われる。However, when the above elements are contained in amounts exceeding their respective upper limits, the bonding properties become too hard and the l1m properties cannot be maintained, leading to poor reliability. , The above-mentioned drawbacks appear when the content (1) exceeds 150 ppm by weight.

〈実施例〉 本発明実施量の各試料は９９．９９９％偽にＴｉ　、　
Ｃｒ、　Ｍｎ　、　Ｆａ、　Ｎｉ、　Ｃｏの１種又は２
種以上を添加して溶解鋳造し、線引加工と中間熱処理と
をくり返して直径２５μのｃＩＬｌｌｌに仕上げたもの
である。<Example> Each sample of the amount of the present invention was 99.999% fake Ti,
One or two of Cr, Mn, Fa, Ni, Co
It is made by melting and casting with the addition of seeds or more, and then repeating wire drawing and intermediate heat treatment to obtain cILlll with a diameter of 25μ.

各試料の添加元素及び添加量を次表（１）に示す。The added elements and amounts of each sample are shown in the following table (1).

尚、比較量の試料Ｎ０．１は９９．９％のｒ＠銅線、Ｎ
ｏ、２は９９．９９％の純銅線、Ｎｏ、３はＢｅを５！
１ｆｆｉｐｐｉ含有せしめた金線である。In addition, sample No. 1 of comparative amount is 99.9% r@copper wire, N
o, 2 is 99.99% pure copper wire, No, 3 is Be 5!
This is a gold wire containing 1ffippi.

表　　　　（１） （久貝ＩＩ−枕ζ） 上記各試料をもって、その機械的性質、ボンディング特
性を測定した結果を次表〈２）に示す。Table (1) (Kugai II - Pillow ζ) The mechanical properties and bonding properties of each of the above samples were measured and the results are shown in the following table (2).

尚、ボンディングは熱圧着、超音波併用方式表（２）中
において、ボール形状の「良」とは真円状態、「可」と
は若干いびつが生じる状態、「不良」とはいびつが大き
くボール形状が定まらない状態である。In addition, bonding is a combination of thermocompression bonding and ultrasonic waves. In Table (2), "Good" means the ball shape is perfectly round, "Good" means the ball is slightly distorted, and "Poor" means the ball is severely distorted. The shape is undefined.

また、ボンディング後の接合強度について、チップ割れ
を起【ノたものにあっては測定の対象とせず、表中に「
−」をもって示した。In addition, regarding the bonding strength after bonding, if the chip has cracked, it will not be measured, and the table will not include "
−” indicates.

（次頁に続く） 表　　　　　（２） （■只に枕＜λ 上記表（２）の測定結果よりみて、Ｔｉ、Ｃｒ。(continued on next page) Table (2) (■ Just a pillow <λ From the measurement results in Table (2) above, Ti and Cr.

Ｍｎ、Ｆｅはその含有量を５〜５０！１ｆｆｉｐｐ＋ｍ
　、　ＮＬ。Mn, Fe content is 5~50!1ffipp+m
, N.L.

Ｇはその含有量を１０〜１００重ｌｉｉ　ｐｐｍとし、
２種以上を含有させる場合は、その含有那上限を１５０
重漬ｐｐ−とした。G has a content of 10 to 100 ppm,
If two or more types are contained, the upper limit of the content shall be 150.
It was made into a heavy pickled pp-.

Claims (1)

【特許請求の範囲】[Claims] 　９９．９９％以上の高純度銅（Ｃｕ）に、第４周期元
素中より５〜５０ｐｐｍｗｔ％のチタン（Ｔｉ）、５〜
５０ｐｐｍｗｔ％のクロム（Ｃｒ）、５〜５０ｐｐｍｗ
ｔ％のマンガン（Ｍｎ）、５〜５０ｐｐｍｗｔ％の鉄（
Ｆｅ）、１０〜１００ｐｐｍｗｔ％のニッケル（Ｎｉ）
、１０〜１００ｐｐｍｗｔ％のコバルト（Ｃｏ）の１種
又は２種以上を５〜１５０ｐｐｍｗｔ％含有せしめたこ
とを特徴とする半導体素子のボンディング用銅線。High purity copper (Cu) of 99.99% or more, 5 to 50 ppmwt% of titanium (Ti) from the fourth period elements, 5 to
50ppmwt% chromium (Cr), 5-50ppmw
t% manganese (Mn), 5-50 ppmwt% iron (
Fe), 10-100 ppmwt% nickel (Ni)
, 10 to 100 ppmwt% of one or more types of cobalt (Co), 5 to 150 ppmwt%.
JP59221482A 1984-10-20 1984-10-20 Copper alloy for bonding of semiconductor device Pending JPS6199645A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59221482A JPS6199645A (en) 1984-10-20 1984-10-20 Copper alloy for bonding of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59221482A JPS6199645A (en) 1984-10-20 1984-10-20 Copper alloy for bonding of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6199645A true JPS6199645A (en) 1986-05-17

Family

ID=16767400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59221482A Pending JPS6199645A (en) 1984-10-20 1984-10-20 Copper alloy for bonding of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6199645A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61259558A (en) * 1985-05-14 1986-11-17 Mitsubishi Metal Corp Cu alloy bonding wire for semiconductor device
JPS62102551A (en) * 1985-10-30 1987-05-13 Toshiba Corp Semiconductor device
JPS62127437A (en) * 1985-11-26 1987-06-09 Tatsuta Electric Wire & Cable Co Ltd Bonding wire for semiconductor device
JPS62287636A (en) * 1986-06-06 1987-12-14 Optic Daiichi Denko Co Ltd Fine wire for semiconductor element connection
JPS62287635A (en) * 1986-06-06 1987-12-14 Optic Daiichi Denko Co Ltd Fine wire for semiconductor element connection
JPS6365035A (en) * 1986-09-05 1988-03-23 Furukawa Electric Co Ltd:The Fine copper wire and its production
JPS643903A (en) * 1987-06-25 1989-01-09 Furukawa Electric Co Ltd Thin copper wire for electronic devices and manufacture thereof
US7820913B2 (en) 2005-01-05 2010-10-26 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor device
EP2312628A2 (en) 2007-07-24 2011-04-20 Nippon Steel Materials Co., Ltd. Semiconductor device bonding wire
US8247911B2 (en) 2007-01-15 2012-08-21 Nippon Steel Materials Co., Ltd. Wire bonding structure and method for forming same
US20130142567A1 (en) * 2011-12-01 2013-06-06 Heraeus Materials Technology Gmbh & Co. Kg Doped 4n copper wires for bonding in microelectronics devices
US9331049B2 (en) 2008-07-11 2016-05-03 Nippon Steel & Sumikin Materials Co., Ltd. Bonding structure of bonding wire
JP2018503743A (en) * 2014-12-22 2018-02-08 ヘレウス マテリアルズ シンガポール ピーティーイー． リミテッド Corrosion- and moisture-resistant copper-based bonding wires containing nickel

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5770244A (en) * 1980-10-15 1982-04-30 Furukawa Electric Co Ltd:The Heat-resistant and anticorrosive copper alloy for electric conduction
JPS58210140A (en) * 1982-06-01 1983-12-07 Sumitomo Electric Ind Ltd Heat resistant conductive copper alloy
JPS6120694A (en) * 1984-07-06 1986-01-29 Toshiba Corp Bonding wire
JPS6120693A (en) * 1984-07-06 1986-01-29 Toshiba Corp Bonding wire
JPS6148543A (en) * 1984-08-10 1986-03-10 Sumitomo Electric Ind Ltd Copper alloy wire for connecting semiconductor element
JPS6152333A (en) * 1984-08-21 1986-03-15 Toshiba Corp Bonding wire
JPS6152332A (en) * 1984-08-21 1986-03-15 Toshiba Corp Bonding wire

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5770244A (en) * 1980-10-15 1982-04-30 Furukawa Electric Co Ltd:The Heat-resistant and anticorrosive copper alloy for electric conduction
JPS58210140A (en) * 1982-06-01 1983-12-07 Sumitomo Electric Ind Ltd Heat resistant conductive copper alloy
JPS6120694A (en) * 1984-07-06 1986-01-29 Toshiba Corp Bonding wire
JPS6120693A (en) * 1984-07-06 1986-01-29 Toshiba Corp Bonding wire
JPS6148543A (en) * 1984-08-10 1986-03-10 Sumitomo Electric Ind Ltd Copper alloy wire for connecting semiconductor element
JPS6152333A (en) * 1984-08-21 1986-03-15 Toshiba Corp Bonding wire
JPS6152332A (en) * 1984-08-21 1986-03-15 Toshiba Corp Bonding wire

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61259558A (en) * 1985-05-14 1986-11-17 Mitsubishi Metal Corp Cu alloy bonding wire for semiconductor device
JPS62102551A (en) * 1985-10-30 1987-05-13 Toshiba Corp Semiconductor device
JPS62127437A (en) * 1985-11-26 1987-06-09 Tatsuta Electric Wire & Cable Co Ltd Bonding wire for semiconductor device
JPS62287636A (en) * 1986-06-06 1987-12-14 Optic Daiichi Denko Co Ltd Fine wire for semiconductor element connection
JPS62287635A (en) * 1986-06-06 1987-12-14 Optic Daiichi Denko Co Ltd Fine wire for semiconductor element connection
JPS6365035A (en) * 1986-09-05 1988-03-23 Furukawa Electric Co Ltd:The Fine copper wire and its production
JPS643903A (en) * 1987-06-25 1989-01-09 Furukawa Electric Co Ltd Thin copper wire for electronic devices and manufacture thereof
US7820913B2 (en) 2005-01-05 2010-10-26 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor device
US8247911B2 (en) 2007-01-15 2012-08-21 Nippon Steel Materials Co., Ltd. Wire bonding structure and method for forming same
EP2312628A2 (en) 2007-07-24 2011-04-20 Nippon Steel Materials Co., Ltd. Semiconductor device bonding wire
US8102061B2 (en) 2007-07-24 2012-01-24 Nippon Steel Materials Co., Ltd. Semiconductor device bonding wire and wire bonding method
US9112059B2 (en) 2007-07-24 2015-08-18 Nippon Steel & Sumikin Materials Co., Ltd. Bonding wire for semiconductor device
EP2950335A2 (en) 2007-07-24 2015-12-02 Nippon Steel & Sumikin Materials Co., Ltd. Semiconductor device bonding wire and wire bonding method
EP2960931A2 (en) 2007-07-24 2015-12-30 Nippon Steel & Sumikin Materials Co., Ltd. Copper bond wire
US9331049B2 (en) 2008-07-11 2016-05-03 Nippon Steel & Sumikin Materials Co., Ltd. Bonding structure of bonding wire
US20130142567A1 (en) * 2011-12-01 2013-06-06 Heraeus Materials Technology Gmbh & Co. Kg Doped 4n copper wires for bonding in microelectronics devices
JP2018503743A (en) * 2014-12-22 2018-02-08 ヘレウス マテリアルズ シンガポール ピーティーイー． リミテッド Corrosion- and moisture-resistant copper-based bonding wires containing nickel

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