JPS62113295U - - Google Patents
Info
- Publication number
- JPS62113295U JPS62113295U JP20341285U JP20341285U JPS62113295U JP S62113295 U JPS62113295 U JP S62113295U JP 20341285 U JP20341285 U JP 20341285U JP 20341285 U JP20341285 U JP 20341285U JP S62113295 U JPS62113295 U JP S62113295U
- Authority
- JP
- Japan
- Prior art keywords
- screen
- winding shaft
- outer circumferential
- circumferential surface
- base edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004804 winding Methods 0.000 claims description 7
- 241000238631 Hexapoda Species 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
Landscapes
- Operating, Guiding And Securing Of Roll- Type Closing Members (AREA)
- Specific Sealing Or Ventilating Devices For Doors And Windows (AREA)
Description
第1図はこの考案の一実施例を示すもので、ス
クリーンを取付けた巻付け軸の縦断面図、第2図
はその分解斜視図、第3図はこの考案を実施した
網戸の斜視図である。 1……巻付け軸、2……取付平坦面、4……凹
条、5……ビス孔、6……両面接着テープ、7…
…防虫網、8……補強材、9……押え板、10…
…向き合う面、11……突条、12……ビス挿通
孔、13……ビス、14……ケース、22……ボ
ールチエーン、23……係止具、24……下框。
クリーンを取付けた巻付け軸の縦断面図、第2図
はその分解斜視図、第3図はこの考案を実施した
網戸の斜視図である。 1……巻付け軸、2……取付平坦面、4……凹
条、5……ビス孔、6……両面接着テープ、7…
…防虫網、8……補強材、9……押え板、10…
…向き合う面、11……突条、12……ビス挿通
孔、13……ビス、14……ケース、22……ボ
ールチエーン、23……係止具、24……下框。
Claims (1)
- 【実用新案登録請求の範囲】 スクリーン7を外周に巻付ける巻付け軸1の外
周面2に長手方向に沿つて、スクリーン7の基縁
部をビス13止めする押え板9で挾持固定する巻
込式スクリーンの取付装置において、 巻付け軸1の外周面2若しくは押え板9の巻付
け軸外周面2と向き合う面10のいずれか一方に
長手方向に連続する凹条4を凹設し、他方に同じ
く長手方向に連続する突条11を突設し、巻付け
軸1の外周面2と押え板9間にスクリーン7の基
縁部を挾むと共に、該凹条4と該突条11をそれ
らの間にスクリーン7の基縁部を挾んだ状態で嵌
合させて、スクリーン7の基縁部を挾持固定した
ことを特徴とする巻込式スクリーンの取付装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20341285U JPH0336717Y2 (ja) | 1985-12-30 | 1985-12-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20341285U JPH0336717Y2 (ja) | 1985-12-30 | 1985-12-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62113295U true JPS62113295U (ja) | 1987-07-18 |
| JPH0336717Y2 JPH0336717Y2 (ja) | 1991-08-02 |
Family
ID=31168717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20341285U Expired JPH0336717Y2 (ja) | 1985-12-30 | 1985-12-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0336717Y2 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03217585A (ja) * | 1990-01-22 | 1991-09-25 | Sanwa Shutter Corp | 巻取装置 |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1016129B2 (en) | 1997-06-24 | 2009-06-10 | Massachusetts Institute Of Technology | Controlling threading dislocation densities using graded layers and planarization |
| US7227176B2 (en) | 1998-04-10 | 2007-06-05 | Massachusetts Institute Of Technology | Etch stop layer system |
| US6649480B2 (en) | 2000-12-04 | 2003-11-18 | Amberwave Systems Corporation | Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs |
| US6703688B1 (en) | 2001-03-02 | 2004-03-09 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
| US6940089B2 (en) | 2001-04-04 | 2005-09-06 | Massachusetts Institute Of Technology | Semiconductor device structure |
| AU2003222003A1 (en) | 2002-03-14 | 2003-09-29 | Amberwave Systems Corporation | Methods for fabricating strained layers on semiconductor substrates |
| US6995430B2 (en) | 2002-06-07 | 2006-02-07 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
| AU2003247513A1 (en) | 2002-06-10 | 2003-12-22 | Amberwave Systems Corporation | Growing source and drain elements by selecive epitaxy |
| US7375385B2 (en) | 2002-08-23 | 2008-05-20 | Amberwave Systems Corporation | Semiconductor heterostructures having reduced dislocation pile-ups |
| US7594967B2 (en) | 2002-08-30 | 2009-09-29 | Amberwave Systems Corporation | Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy |
-
1985
- 1985-12-30 JP JP20341285U patent/JPH0336717Y2/ja not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03217585A (ja) * | 1990-01-22 | 1991-09-25 | Sanwa Shutter Corp | 巻取装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0336717Y2 (ja) | 1991-08-02 |
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