JPS6211496B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a new method for forming fine and highly accurate patterns on a desired substrate. In order to explain the effects of the present invention, a method for producing a metal pattern using a conventional lift-off method will be explained with reference to FIG. In the general conventional method, first, as shown in FIG. 1a, a surface layer 1 on a wiring board 11 is
A layer 13 (hereinafter referred to as a lift-off layer) made of a polymeric resin and having a reverse pattern of the wiring is formed on the layer 2 .
As the surface layer 12, a layer containing an inorganic oxide such as SiO ₂ or various glasses, or Si, etc. is used. Materials for the lift-off layer 13 include epoxy phenol resin, cyclized rubber resin, polyimide resin,
PIQ resin (resin disclosed in Japanese Patent Publication No. 48-2956), etc. is used. Next, as shown in FIG. 1b, a wiring conductor layer 14 is formed. Thereafter, the lift-off layer 13 is removed, and at the same time, the wiring conductor 14 on the lift-off layer is also removed to form a wiring pattern as shown in FIG. 1c. However, the conventional method described above has the following limitations.
That is, in order to improve the connection between the wiring conductor 14 and the base surface layer 12, as shown in FIG. Etch a little. However, since the adhesive force between the surface layer 12 and the lift-off layer 13 is generally weak and the chemical resistance is also poor, the etching liquid 16 quickly penetrates into the interface between the surface layer 12 and the lift-off layer 13. Therefore, when the width W (W corresponds to the subsequent wiring interval) of the lift-off layer 13 is narrow, the lift-off layer 13 may partially peel off. Thereafter, a wiring conductor 14 is applied as shown in FIG. 1e. 14
A and 14B indicate portions that should become adjacent wiring patterns. Finally, the lift-off layer 13 is removed, and the wiring conductor 14 on the lift-off layer is also removed to form wiring as shown in FIG. 1(f). However, as mentioned before, the surface layer 12 of the lift-off layer 13
The precision of the wiring pattern decreases as shown in FIG. 1e, and the lift-on layer 13 shown in FIG.
When the width W is narrow, short circuits often occur between adjacent wiring patterns. For example, if the width W of the lift-off layer 13 is 4 μm or less, there is a very high probability that the wiring will be short-circuited. In the present invention, even if the width W of the lift-off layer 13 as described above is narrowed to 2 μm or less, the lift-off layer 13
The purpose of the present invention is to prevent peeling of the patterns and therefore prevent short circuits between adjacent patterns. The object of the present invention is achieved by taking the following steps. A step of providing a layer containing a silane coupling agent or its hydroxide (hereinafter referred to as a coupling layer) on a desired substrate, forming a polymer resin layer of a desired shape on the coupling layer, and forming a pattern forming layer. The method is characterized in that after the step of installing, the polymer resin layer and the pattern forming layer on the polymer resin layer are removed, and a pattern is formed on a desired substrate. Here, the silane coupling agent has the general formula X ₃ Si (CH ₂ ) _o Y where n = 0 to 3. It is a compound with an organic sensitive group. In addition, more specific examples are given in Examples. Moreover, the hydroxide can be obtained by the reaction of X ₃ Si (CH ₂ ) _o Y + 3H ₂ O → (HO) ₃ Si (CH ₂ ) _o Y + 3HX. In fact, it can be easily obtained by dissolving a silane coupling agent in an organic solvent such as alcohol, and then adding water and, if necessary, an organic acid such as CH ₃ COOH. The layer of coupling agent is less than 100 Å, approximately 20 Å
~50 Å. The layer may be formed by dissolving the coupling agent in an organic solvent and using a general spin coating method.
Alternatively, the coupling agent may be heated and exposed to its vapor. Moreover, hydroxide can also be easily obtained by exposing to water vapor at the same time or after film formation. Moreover, more stable adhesive strength and chemical resistance can be obtained by using a silane coupling agent hydroxide. Hereinafter, the present invention will be explained in detail with reference to Examples. Example 1 An example is shown in which γ-(β-aminoethyl)aminopropyldimethoxysilane is used as the silane coupling agent. The structural formula _of γ-(β-aminoethyl) _{aminopropyldimethoxysilane} is _H2NCH2CH2NH ( _CH2 ) _3SiCH3 ( _{OCH3 ) 2} . This embodiment will be explained with reference to FIG. As shown in FIG. 2a, a wiring board 21 such as Si
A layer 25 of the coupling agent is formed on the surface layer 22 made of SiO ₂ or Phosphor-Silicate Glass. The thickness is approximately 20-50 Å. Coupling agent layer 25 is 1% of γ-(β-aminoethyl)aminopropyldimethoxysilane.
Stable formation can be achieved by spin-coating a solution of acetone or isopropyl alcohol, and heat-treating at 100 to 280°C. The heat treatment temperature is more preferably 150 to 220°C. Next, a lift-off layer 23 is formed to a thickness of 1 .mu.m, and the surface layer 22 of the substrate is slightly etched using an etching solution 26 containing an acid such as fluoric acid or ammonium fluoride, as shown in FIG. 2c. Note that the lift-off layer generally has a thickness equal to or greater than the thickness of the wiring conductor, and is often about 1.5 to 2.5 μm thick. Due to the presence of the coupling agent layer 25,
An etching solution 26 is applied to the surface layer 22 and the lift-off layer 2.
Penetration into the interface of No. 3 is extremely rare. Therefore, even if the width W of the lift-off layer 23 is narrow, the lift-off layer 23 will not peel off. Therefore, if the wiring conductor 24 is formed with Al having a thickness of 1 μm, for example, and the lift-off layer 23 is removed at the same time as shown in FIG. , the pattern accuracy is good, and the distance W between the wiring parts 24A and 24B is
Even if the width is as narrow as 2.5 to 3 μm, short circuits will not occur. As mentioned above, coupling agent layer 2
5 between the surface layer 22 and lift-off layer 23 of the substrate 21, wiring pattern accuracy,
Both the minimum wiring spacing can be greatly improved. In particular, the minimum wiring spacing is 2.5, which is approximately 1/2 that of the conventional method.
It can be reduced to ~3 μm. Example 2 γ produced by hydrolysis of γ-(β-aminoethyl)aminopropyldimethoxysilane with water
- When the hydroxide of (β-aminoethyl)aminopropyldimethoxysilane is used as a coupling agent layer, more stable adhesive strength and chemical resistance can be obtained than when the silane coupling agent itself is used. can. The coupling agent layer of the hydroxide of the silane coupling agent is spin-coated using a solution of the above silane coupling agent in 0.5-2% acetone or isopropyl alcohol with 0.5-2% glacial acetic acid added. 180~250
It can be obtained by heat treatment at ℃. If a wiring pattern is formed using this coupling agent layer according to the procedure of Example 1, the minimum spacing between wirings will be 1/3 to 1/4 of the conventional method, that is, 1 to 2 μm.
can be narrowed down to. In addition, as the silane coupling agent, Example 1,
In addition to those mentioned in Section 2, various silane coupling agents shown in Table 1 are commercially available, and almost the same effects can be obtained with these coupling agents and their hydroxides. 【table】

[Brief explanation of the drawing]

FIG. 1 is an explanatory diagram of a conventional method for explaining the present invention, and FIG. 2 is a diagram for explaining the present invention and its embodiments.

Claims (1)

[Claims] 1. A step of providing a silane coupling agent or a hydroxide layer of the silane coupling agent on a substrate containing silicon on the surface in order to improve the adhesion between the substrate and the polymer resin layer, 100°C to 280°C a heat treatment step at a temperature of etching the coupling agent or the hydroxide layer of the silane coupling agent;
After etching the exposed portion of the substrate using an etchant containing fluorine, forming a pattern forming layer, and then removing the polymer resin layer and the pattern forming layer on the polymer resin layer. A pattern forming method comprising: removing the substrate, and forming a pattern on the substrate.