JPS6212200B2 - - Google Patents
Info
- Publication number
- JPS6212200B2 JPS6212200B2 JP57048418A JP4841882A JPS6212200B2 JP S6212200 B2 JPS6212200 B2 JP S6212200B2 JP 57048418 A JP57048418 A JP 57048418A JP 4841882 A JP4841882 A JP 4841882A JP S6212200 B2 JPS6212200 B2 JP S6212200B2
- Authority
- JP
- Japan
- Prior art keywords
- glaze
- weight
- thermal expansion
- porcelain
- infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000203 mixture Substances 0.000 claims description 19
- 229910052573 porcelain Inorganic materials 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 7
- 229910052878 cordierite Inorganic materials 0.000 claims description 6
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 5
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 235000008331 Pinus X rigitaeda Nutrition 0.000 claims description 3
- 235000011613 Pinus brutia Nutrition 0.000 claims description 3
- 241000018646 Pinus brutia Species 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 description 16
- 235000018783 Dacrycarpus dacrydioides Nutrition 0.000 description 8
- 240000007320 Pinus strobus Species 0.000 description 8
- 235000008578 Pinus strobus Nutrition 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 229910002114 biscuit porcelain Inorganic materials 0.000 description 5
- 239000004927 clay Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 235000014692 zinc oxide Nutrition 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 235000019738 Limestone Nutrition 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000006028 limestone Substances 0.000 description 3
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 3
- 229910052808 lithium carbonate Inorganic materials 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000000454 talc Substances 0.000 description 2
- 229910052623 talc Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000010459 dolomite Substances 0.000 description 1
- 229910000514 dolomite Inorganic materials 0.000 description 1
- 239000010433 feldspar Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Landscapes
- Gas Burners (AREA)
- Resistance Heating (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
【発明の詳細な説明】
本発明は、新規な施釉したセラミツクス赤外線
放射体を製造するための方法に関するものであ
る。さらに詳しくいえば、本発明は、素地と釉の
両方の熱膨張をできるだけ低くするように材料を
選択して耐熱衝撃性を高めた、黒体の放射率に近
い高効率放射体及び短波長域の放放射率が低いに
もかかわらず波長４〜５μｍ以遠の放射率が高
い、いわゆる遠赤外線放射体の製造方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing a novel glazed ceramic infrared emitter. More specifically, the present invention provides a high-efficiency radiator with an emissivity close to that of a black body and a short-wavelength radiator, which has improved thermal shock resistance by selecting materials to minimize the thermal expansion of both the base material and the glaze. The present invention relates to a method for manufacturing a so-called far-infrared radiator, which has a high emissivity at wavelengths of 4 to 5 μm and beyond, despite having a low emissivity.
赤外線放射体は、通常加熱した状態で用いられ
るので、熱膨張率が小さく、かつ常温から約800
℃までの温度範囲で異常熱膨張を生じない材料を
用いることが必要である。 Infrared radiators are usually used in a heated state, so their coefficient of thermal expansion is small, and the temperature ranges from room temperature to approximately 800
It is necessary to use a material that does not exhibit abnormal thermal expansion in the temperature range up to °C.
また、吸水性の材料を用いると、吸収された水
分が加熱によつて気化し、その膨張圧によつて構
造が破壊することがあるので、吸水性が低いこと
も要求される。 Furthermore, if a water-absorbing material is used, the absorbed water vaporizes due to heating, and the structure may be destroyed by the expansion pressure, so it is also required to have low water absorption.
このような高効率赤外線放射体及び遠赤外線放
射体に対しての要求を満たすとともに、表面の外
観を改善し、かつ表面の汚れ付着を防止するに
は、セラミツクス赤外線放射体の表面に施釉すれ
ばよいが、加熱して使用する際に熱膨張率の差異
により素地と釉とが剥離したりその境界部分でク
ラツクを生じるのを免れない。 In order to meet these demands for high-efficiency infrared radiators and far-infrared radiators, improve the surface appearance, and prevent surface dirt from adhering to the surface, it is possible to glaze the surface of ceramic infrared radiators. However, when heated and used, the base and glaze inevitably peel off due to the difference in coefficient of thermal expansion, and cracks occur at the boundary between them.
本発明者は、このような問題点を解決するため
に、素地として低熱膨張性のβ―スポジユーメン
系磁器又はコージエライト系磁器を用いるととも
に、その上に施す釉薬を特定の低膨張性のものと
すればよいことを見出し、本発明をなすに至つ
た。 In order to solve these problems, the present inventor uses low thermal expansion β-spodium porcelain or cordierite porcelain as the base material, and uses a specific low-expansion glaze to apply on top of it. The inventors have discovered that this is a good idea, and have come up with the present invention.
すなわち、本発明は、低熱膨張性のβ―スポジ
ユーメン系磁器又はコージエライト系磁器を素地
とし、この上に、Li2O，CaO，Al2O3及びSiO2か
ら成る組成又はこれにさらにZnOを加えた組成を
有する低膨張性マツト釉あるいはこのマツト釉に
黒色の遷移金属酸化物焼成物を配合したものを施
釉し、1100〜1300℃で焼成することを特徴とする
赤外線放射体の製造方法を提供するものである。 That is, the present invention uses low thermal expansion β-spodium porcelain or cordierite porcelain as a base material, and on top of this, a composition consisting of Li 2 O, CaO, Al 2 O 3 and SiO 2 or further added with ZnO. Provided is a method for producing an infrared radiator, characterized in that the glaze is applied with a low-expansion pine glaze having a composition or a mixture of the pine glaze and a black transition metal oxide fired product, and fired at 1100 to 1300°C. It is something to do.
本発明方法における素地としては、コージエラ
イト（2MgO・2Al2O3・5SiO2）を主体としたも
の、又はベタライト〔（Li2O・Na2O）・Al2O3・
8SiO2〕を原料として調製した低膨張性のβ―ス
ポジユーメン（Li2O・Al2O3・4SiO2）が用いられ
る。これらの素地の線熱膨張係数は０ないし５×
10-6程度が好ましい。 The substrate used in the method of the present invention is mainly cordierite (2MgO・2Al 2 O 3・5SiO 2 ) or betalite [(Li 2 O・Na 2 O)・Al 2 O 3・
A low-expansion β-spodium (Li 2 O・Al 2 O 3・4SiO 2 ) prepared from [8SiO 2 ] as a raw material is used. The coefficient of linear thermal expansion of these materials is 0 to 5×
Approximately 10 -6 is preferable.
また、この上に施される釉薬としては、組成式
0.7Li2O・0.3CaO・0.5Al2O3
・0.3SiO2
に相当する釉、あるいはこのCaOの一部がZnOに
より置換された、組成式
0.7Li2O・0.2CaO・0.1ZnO
・0.5Al2O3・3.0SiO2
に相当する釉を生成するような白色マツト釉を用
いるのが有利である。このような白色マツト釉
は、例えばベタライトを主体とし、これに炭酸リ
チウム、石灰石、ドロマイト、亜鉛華などを混合
し、湿式微粉砕し、スラリー状とすることによつ
て調製することができる。この白色マツト釉を施
した場合は、いわゆる遠赤外線放射体を得ること
ができる。 In addition, the glaze to be applied on this is a glaze corresponding to the compositional formula 0.7Li 2 O・0.3CaO・0.5Al 2 O 3・0.3SiO 2 or a glaze with a composition in which a part of this CaO is replaced with ZnO. It is advantageous to use a white pine glaze, which produces a glaze corresponding to the formula 0.7Li 2 O.0.2CaO.0.1ZnO.0.5Al 2 O 3.3.0SiO 2 . Such a white pine glaze can be prepared, for example, by mixing betalite with lithium carbonate, limestone, dolomite, zinc white, etc., and wet-pulverizing the mixture to form a slurry. When this white pine glaze is applied, a so-called far-infrared radiator can be obtained.
他方、放射効率の高い赤外線放射体を得るに
は、この白色マツト釉に放射率の良好な黒色の遷
移元素酸化物例えば二酸化マンガン、酸化鉄、酸
化コバルト、酸化銅、酸化クロムなどの焼成物を
配合した、黒色ないし黒褐色の釉薬を用いる。白
色マツト釉に対する遷移元素酸化物焼成物の配合
量としては、５〜20重量％の範囲が適当である。 On the other hand, in order to obtain an infrared emitter with high radiation efficiency, a black transition element oxide with good emissivity, such as manganese dioxide, iron oxide, cobalt oxide, copper oxide, chromium oxide, etc., is added to the white pine glaze. A blended black or dark brown glaze is used. The appropriate amount of the fired transition element oxide to the white matte glaze is in the range of 5 to 20% by weight.
本発明方法を好適に実施するには、所定の素地
を素焼し、その上に湿式微粉砕法によりスラリー
状に調製した所定の組成の白色マツト釉又は黒色
釉を施釉したのち、1200〜1250℃の酸化焔で焼成
する。この際の素地の形状は、板状、棒状、管
状、その他任意のものとすることができる。この
ようにして得た放射体の適所に電気抵抗体を形成
させれば、セラミツクスヒーターとすることがで
きる。 In order to suitably carry out the method of the present invention, a predetermined base material is bisque fired, a white pine glaze or a black glaze of a predetermined composition prepared in the form of a slurry by a wet pulverization method is applied thereon, and then heated at a temperature of 1200 to 1250°C. Fired in an oxidized flame. The shape of the base material at this time can be plate-like, rod-like, tubular, or any other arbitrary shape. By forming electrical resistors at appropriate locations on the radiator thus obtained, a ceramic heater can be obtained.
本発明方法により得られる施釉した赤外線放射
体は、耐熱衝撃性が高く、また長期間にわたつて
使用しても、素地部と釉部との剥離やクラツクを
生じない上に、外観が滑らかで汚れにくいという
長所がある。 The glazed infrared radiator obtained by the method of the present invention has high thermal shock resistance, does not cause peeling or cracking between the base part and the glazed part even after long-term use, and has a smooth appearance. It has the advantage of not getting dirty easily.
次に実施例により本発明をさらに詳細に説明す
る。 Next, the present invention will be explained in more detail with reference to Examples.
実施例 １
ベタライト80重量％と粘土20重量％の混合物を
湿式微粉砕し、乾燥後、プレス成形により板状体
（厚さ５mm、縦300mm、横250mm）とし、約800℃に
おいて素焼した。Example 1 A mixture of 80% by weight of Betalite and 20% by weight of clay was wet-pulverized, dried, and then press-molded into a plate (5 mm thick, 300 mm long, 250 mm wide), and bisque fired at about 800°C.
このようにして得た素地の熱膨張曲線を第１図
に実線で示す（符号Ａ）。 The thermal expansion curve of the base material thus obtained is shown by a solid line in FIG. 1 (symbol A).
次にベタライト75.0重量％、炭酸リチウム8.4
重量％、石灰石7.0重量％、亜鉛華2.8重量％及び
水水酸化アルミニウム6.8重量％から成る混合物
を湿式微粉砕し、スラリー状の白色マツト釉を調
製した。この白色マツト釉は、式
0.7Li2O・0.2CaO・0.1ZnO
・0.5Al2O3・3.0SiO2
に相当する組成を有し、その焼成体は、第１図に
破線（符号Ｂ）で示した熱膨張曲線を有する。 Next, betalite 75.0% by weight, lithium carbonate 8.4%
A mixture consisting of 7.0% by weight of limestone, 2.8% by weight of zinc white, and 6.8% by weight of aluminum hydroxide was wet-pulverized to prepare a white matte glaze in the form of a slurry. This white pine glaze has a composition corresponding to the formula 0.7Li 2 O・0.2CaO・0.1ZnO ・0.5Al 2 O 3・3.0SiO 2 , and its fired product is shown by the broken line (symbol B) in Figure 1. It has the thermal expansion curve shown.
前記した素焼素地の表側面に、この白色マツト
釉を施釉し、1200〜1250℃の範囲の温度の酸化焔
で焼成することにより遠赤外線放射パネル板を製
造した。 This white pine glaze was applied to the front side of the unglazed base described above, and the far-infrared radiation panel board was manufactured by firing the white pine glaze in an oxidizing flame at a temperature in the range of 1200 to 1250°C.
別にSnO290重量％とSb2O510重量％の粉末混合
物に水を加えてスラリー状とし、前記のパネル板
の裏面側に塗布し、1000〜1200℃の温度で焼き付
けて抵抗体を形成し、さらにその両端に銀ペース
トでターミナルを作り、500℃で焼き付け、遠赤
外線ヒーターを製造した。 Separately, add water to a powder mixture of 90% by weight SnO 2 and 10% by weight Sb 2 O 5 to form a slurry, apply it to the back side of the panel board, and bake at a temperature of 1000 to 1200°C to form a resistor. Then, terminals were made with silver paste on both ends and baked at 500℃ to produce a far-infrared heater.
このものの、表面温度を500℃にしたときの半
球面分光赤外線放射発散度曲線は、第２図に実線
（符号Ｉ）で示すように、遠赤外線放射体の特性
を有する。 The hemispherical spectral infrared radiation emittance curve of this material when the surface temperature is 500° C. has the characteristics of a far-infrared radiator, as shown by the solid line (symbol I) in FIG.
このようにして得られた遠赤外線ヒーターは、
常温から500℃までの線熱膨張係数が素地部で2.3
×10-6、釉部が2.6×10-6と比較的低く、十分実
用に供することができる。 The far infrared heater obtained in this way is
The linear thermal expansion coefficient from room temperature to 500℃ is 2.3 in the base part.
×10 -6 and the glaze part is relatively low at 2.6×10 -6 , which is sufficient for practical use.
実施例 ２
ベタライト60重量％、長石10重量％及び粘土30
重量％から成る混合物を微粉砕後、練土状に調製
し、押出成形によりパイプ状（外径20mm、内径15
mm、長さ500mm）に成形したのち、素焼した。こ
のものの線熱膨張曲線を第１図に鎖線（符号
A′）で示す。Example 2 Betalite 60% by weight, feldspar 10% by weight and clay 30%
After finely pulverizing the mixture consisting of
mm, length 500 mm) and then bisque fired. The linear thermal expansion curve of this material is shown in Figure 1 as a chain line (symbol:
Shown as A′).
次に、ベタライト74.6重量％、炭酸リチウム
8.3重量％、石灰石10.4重量％及び水酸化アルミ
ニウム6.7重量％から成る基本釉組成物に、あら
かじめ、MnO260重量％、Fe2O320重量％、
CaO10重量％及びCuO10重量％の混合物を1100
℃で仮焼して調製した焼成物を17重量％の割合で
添加し、湿式粉砕することにより釉スラリーを得
た。 Next, betalite 74.6% by weight, lithium carbonate
To a basic glaze composition consisting of 8.3% by weight, 10.4% by weight of limestone, and 6.7% by weight of aluminum hydroxide, 60% by weight of MnO 2 , 20% by weight of Fe 2 O 3 ,
1100% mixture of CaO10wt% and CuO10wt%
A fired product prepared by calcining at °C was added at a ratio of 17% by weight, and wet-pulverized to obtain a glaze slurry.
このものの線熱膨張曲線を第１図に二点鎖線
（符号B′）で示す。前記の素焼した素地に、この
釉スラリーを施こし、1200℃の酸化焔で焼成し、
表面が黒色の管状放射体を製造した。 The linear thermal expansion curve of this material is shown in FIG. 1 by a two-dot chain line (symbol B'). This glaze slurry is applied to the bisque fired base material, which is then fired in an oxidation flame at 1200℃.
A tubular radiator with a black surface was manufactured.
この管状放射体の内部にニクロム線を装入すれ
ば赤外線ヒーターとなる。このものは、第２図の
破線（符号）で示すような赤外線放射特性を有
する。 If a nichrome wire is inserted inside this tubular radiator, it becomes an infrared heater. This material has infrared radiation characteristics as shown by the broken line (symbol) in FIG.
なお、第２図には比較のために、黒体の半球面
分光赤外線放射発散度を鎖線（符号）で併記し
た。 For comparison, FIG. 2 also shows the hemispherical spectral infrared radiation emittance of a black body using a chain line (symbol).
この例におけるMnO260重量％、Fe2O320重量
％、CaO10重量％及びCuO10重量％から成る混
合物の代りに、Fe2O380重量％、MnO215重量％
及びCoO5重量％から成る混合物を用い他は同様
にして赤外線放射体を製造した場合もほとんど同
じ結果が得られた。 Instead of the mixture consisting of 60% by weight MnO 2 , 20% by weight Fe 2 O 3 , 10% by weight CaO and 10% by weight CuO in this example, 80% by weight Fe 2 O 3 , 15% by weight MnO 2
Almost the same results were obtained when an infrared radiator was produced in the same manner except for using a mixture consisting of 5% by weight of CoO and 5% by weight of CoO.
実施例 ３
タルク25重量％、アルミナ８重量％、粘土68重
量％の割合で各成分を用意し、先ずタルクとアル
ミナと粘土の中の43重量％相当分だけを混合し
て、1300〜1400℃において仮焼し、次いで残りの
粘土を加えてコージエライト素地を調製した。こ
れを実施例２と同様にしてパイプ状に成形し、素
焼きした。このようにして得た素地の常温から
500℃までの線熱膨張係数は2.7×10-6であつた。Example 3 Each component was prepared at a ratio of 25% by weight of talc, 8% by weight of alumina, and 68% by weight of clay. First, only the 43% by weight of talc, alumina, and clay were mixed and heated at 1300 to 1400°C. The remaining clay was then added to prepare a cordierite base. This was formed into a pipe shape in the same manner as in Example 2, and bisque fired. From the room temperature of the base material obtained in this way
The coefficient of linear thermal expansion up to 500°C was 2.7×10 -6 .
次に、実施例２と同じ組成の黒色釉を施釉し、
同じようにして焼成することにより表面が黒色の
赤外線放射体が得られた。 Next, apply a black glaze with the same composition as in Example 2,
By firing in the same manner, an infrared radiator with a black surface was obtained.
前記の素地の線熱膨張曲線を第１図に点線（符
号Ｃ）で示す。 The linear thermal expansion curve of the above-mentioned substrate is shown in FIG. 1 by a dotted line (symbol C).
第１図は、本発明の各実施例で得た素地及び釉
の焼成後の線熱膨張曲線を示すグラフ、第２図
は、各実施例で得られた放射体及び黒体の表面温
度を500℃としたときの半球面分光赤外線放射発
散度曲線を示すグラフである。
Fig. 1 is a graph showing the linear thermal expansion curves of the base material and glaze obtained in each example of the present invention after firing, and Fig. 2 is a graph showing the surface temperature of the radiator and black body obtained in each example. It is a graph showing a hemispherical spectral infrared radiation emittance curve when the temperature is 500°C.
Claims (1)
コージエライト系磁器を素地とし、この上に、
Li2O，CaO，Al2O3及びSiO2から成る組成又はこ
れにさらにZnOを加えた組成を有する低膨張性マ
ツト釉を施釉し、1100〜1300℃で焼成することを
特徴とする赤外線放射体の製造方法。 ２ 低熱膨張性のβ―スポジユーメン系磁器又は
コージエライト系磁器を素地とし、この上に、
Li2O，CaO，Al2O3及びSiO2から成る組成又はこ
れにさらにZnOを加えた組成を有する低膨張性マ
ツト釉に黒色の遷移金属酸化物焼成物を配合した
ものを施釉し、1100〜1300℃で焼成することを特
徴とする赤外線放射体の製造方法。[Claims] 1. A base made of low thermal expansion β-spodium porcelain or cordierite porcelain, on which
Infrared radiation characterized by applying a low expansion pine glaze having a composition consisting of Li 2 O, CaO, Al 2 O 3 and SiO 2 or further adding ZnO and firing at 1100 to 1300 ° C. How the body is manufactured. 2 A base of low thermal expansion β-spodium porcelain or cordierite porcelain, on which
A low-expansion matte glaze with a composition of Li 2 O, CaO, Al 2 O 3 , and SiO 2 or a composition in which ZnO is added is mixed with a black transition metal oxide fired product and 1100 A method for producing an infrared radiator, characterized by firing at ~1300°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57048418A JPS58167483A (en) | 1982-03-25 | 1982-03-25 | Manufacture of glazed ceramic infrared radiator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57048418A JPS58167483A (en) | 1982-03-25 | 1982-03-25 | Manufacture of glazed ceramic infrared radiator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58167483A JPS58167483A (en) | 1983-10-03 |
| JPS6212200B2 true JPS6212200B2 (en) | 1987-03-17 |
Family
ID=12802764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57048418A Granted JPS58167483A (en) | 1982-03-25 | 1982-03-25 | Manufacture of glazed ceramic infrared radiator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58167483A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01131056A (en) * | 1987-11-13 | 1989-05-23 | Chugai Ro Co Ltd | Far infrared radiating material |
| JPH01314716A (en) * | 1988-06-10 | 1989-12-19 | Unitika Ltd | White fabric having heat insulating property |
| US7754345B2 (en) * | 2004-06-16 | 2010-07-13 | Jih-Hsin Tsai | Far infrared emitting nano glaze |
| WO2014123294A1 (en) * | 2013-02-06 | 2014-08-14 | (주)에릭스 | Heating element composition heated by being coated on surface of heat resistant ceramic ware and absorbing microwaves, ceramic ware transfer paper containing same, far infrared ray-radiating and heating ceramic ware containing same, and preparation method therefor |
-
1982
- 1982-03-25 JP JP57048418A patent/JPS58167483A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58167483A (en) | 1983-10-03 |
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