JPS62124865U - - Google Patents

Info

Publication number
JPS62124865U
JPS62124865U JP1107586U JP1107586U JPS62124865U JP S62124865 U JPS62124865 U JP S62124865U JP 1107586 U JP1107586 U JP 1107586U JP 1107586 U JP1107586 U JP 1107586U JP S62124865 U JPS62124865 U JP S62124865U
Authority
JP
Japan
Prior art keywords
photovoltaic device
layer
amorphous
thickness
recombination layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1107586U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1107586U priority Critical patent/JPS62124865U/ja
Publication of JPS62124865U publication Critical patent/JPS62124865U/ja
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Description

【図面の簡単な説明】
第１図は本案素子の断面構造図、第２図は本案
素子における再結合層と変換効率との関係を示す
グラフ、第３図は本案素子の光劣化特性を示すグ
ラフ、第４図は従来素子の断面構造図である。 １……基板、２……透明導電膜、３……非晶質
半導体層、４ａ，４ｂ……ｉ型非晶質半導体層、
５……再結合層、６……ｎ型非晶質半導体層、７
……裏面電極。

Claims (1)

  1. 【実用新案登録請求の範囲】 １ ｐ―ｉ―ｎ接合型の非晶質光起電力素子にお
    いて、ｉ層中に５０〜１００Å厚の再結合層を設
    けたことを特徴とする非晶質光起電力素子。 ２ 前記再結合層はリン及び／又はボロン、或い
    は酸素及び／又は窒素を含む実用新案登録請求の
    範囲第１項記載の非晶質光起電力素子。 ３ 前記再結合層は、ｉ型非晶質半導体層中の膜
    厚中央よりも受光側寄りに設けられている実用新
    案登録請求の範囲第１項記載の非晶質光起電力素
    子。
JP1107586U 1986-01-28 1986-01-28 Pending JPS62124865U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1107586U JPS62124865U (ja) 1986-01-28 1986-01-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1107586U JPS62124865U (ja) 1986-01-28 1986-01-28

Publications (1)

Publication Number Publication Date
JPS62124865U true JPS62124865U (ja) 1987-08-08

Family

ID=30797962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1107586U Pending JPS62124865U (ja) 1986-01-28 1986-01-28

Country Status (1)

Country Link
JP (1) JPS62124865U (ja)

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