JPS62192580A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPS62192580A JPS62192580A JP3442586A JP3442586A JPS62192580A JP S62192580 A JPS62192580 A JP S62192580A JP 3442586 A JP3442586 A JP 3442586A JP 3442586 A JP3442586 A JP 3442586A JP S62192580 A JPS62192580 A JP S62192580A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- gas
- gate
- orifice
- sputtering chambers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 53
- 239000007789 gas Substances 0.000 abstract description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 26
- 229910052786 argon Inorganic materials 0.000 description 13
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- FOPBMNGISYSNED-UHFFFAOYSA-N [Fe].[Co].[Tb] Chemical compound [Fe].[Co].[Tb] FOPBMNGISYSNED-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
Landscapes
- Thin Magnetic Films (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、インライン型スパッタ装置の新規な構成に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a novel configuration of an in-line sputtering apparatus.
従来のスパッタ装置の構成は、インライン壓の場＠ｒ、
第５図に示すように各スパッタチャンバーはゲートバル
ブＧｖで仕切られていた。スパッタのシーケンスを説明
する。トレーＴｏに基板をセットし、数１１枚のトレー
Ｔｏ金ロードチャツバ−Ｌに入れ、ポンプＰで高真空に
排気する。−足時間真空引き後ゲートバルブＧＶＩを開
け１枚のトレーＴＯｉスパッタチャンバーＣＨ１に４（
、誘電体等のスパッタの＠会は、アルゴンｓｏ不活性ガ
スに更に酸素、窒素、フッ素、炭化水素、水素等の反応
性ガスを導入しターゲットヲスパソタトレー上の基板に
成膜する。所定の膜厚スパッタ後ガス導Δを止めポンプ
Ｐで１０−５〜１Ｑ″″’ ＴＯｒｒ壜で真空側！ａｔ
＆、ゲートバルブＧＶ２全開け、スパッタチャンバーＣ
ｊＨ２にトレーカ掻１動する。後はこの繰り返しで第５
図に示したスパッタの場合には、異種のものを４層形成
し、アンロードチャ７ハＵＬＫ送られ、全てのトレーに
スパッタ佼アノロードチャンバーを大気圧とし、収りだ
す。もし、全てのターゲットが金属でアルゴン等の不活
性ガス以外のガス導入か必要なければ各スパッタチャン
バー間のゲートバルブＧＶ２〜Ｇ’７４は不要になるの
であるが、例えば第６図に示した様な金属層を誘眠ｊＷ
Ｉでサンドインチしたｌｌ１Ｉ造の場合には、ゲートバ
ルブＧＶ２〜Ｇｖ４は必ず必要となってくる。その理由
を具体列を挙げ説明する。第６図の６−１はポリカーボ
ネイト等のプラスチック基板、６−２は酸化ケイ累算の
酸化物層、６−３は、窒化アルミニウム等の窒化物４．
６−４はテルビニウム−妖−コバルト等の光磁気記録１
−１６−５は、窒化アルミニウム等の窒化ｖＪ層からな
る光磁気記録媒体を用いて説明する。本記録媒体溝す兄
であると、第１のスパッタチャンバーＣＨ１は、アルゴ
ンと酸素のガス雰囲気、第２のスパッタチャンバーＣＨ
２は、アルゴンと窒素のガス雰囲気、第６のスパッタチ
ャンバー０Ｈ６ｉ、アルゴンのみのガス雰囲気、第４の
スパッタチャンバーＣＨＡは、アルゴンと画素のガス雰
囲気であり例λば、光磁気記録１−を形成するスパッタ
チャンバＣＨ５に窒素ガスが混入量ると光磁気記録層の
磁気または光学特性が之ちまち劣化するといった間ｍか
生じる。したがって、各スパッタチャンバー中のガス雰
囲気か相互に干渉し合わな１．／−１様にゲートバルブ
ＧＶｄｊ必要であった。The configuration of conventional sputtering equipment is an in-line mill @r,
As shown in FIG. 5, each sputtering chamber was partitioned by a gate valve Gv. The sputtering sequence will be explained. A substrate is set on a tray To, placed in a tray L containing several eleven sheets of gold, and evacuated to a high vacuum using a pump P. - After vacuuming for a few minutes, open the gate valve GVI and place one tray TOi in the sputtering chamber CH1.
For sputtering of dielectric materials, etc., a reactive gas such as oxygen, nitrogen, fluorine, hydrocarbon, hydrogen, etc. is introduced into the argon or other inert gas, and a film is formed on the substrate on the target and sputtering tray. After sputtering a predetermined film thickness, stop the gas flow Δ and pump P to 10-5 to 1Q''''' TOrr bottle to the vacuum side! at
&, gate valve GV2 fully open, sputter chamber C
Move the trader one time to jH2. After that, repeat this to the fifth
In the case of the sputtering shown in the figure, four layers of different types are formed, the unloading chamber is sent to 7 ULK, and the sputtering chamber is brought to atmospheric pressure and collected in all the trays. If all the targets are metal and it is not necessary to introduce a gas other than an inert gas such as argon, the gate valves GV2 to G'74 between each sputtering chamber are unnecessary, but for example, as shown in Figure 6, the gate valves GV2 to G'74 are unnecessary. hypnotizes the metal layer
In the case of 11I construction with sandwich inch I, gate valves GV2 to Gv4 are definitely required. The reasons for this will be explained with specific examples. In FIG. 6, 6-1 is a plastic substrate such as polycarbonate, 6-2 is an oxide layer of silicon oxide, and 6-3 is a nitride layer such as aluminum nitride.
6-4 is magneto-optical recording of terbinium-cobalt etc. 1
-16-5 will be explained using a magneto-optical recording medium made of a nitrided vJ layer such as aluminum nitride. In this case, the first sputtering chamber CH1 has a gas atmosphere of argon and oxygen, and the second sputtering chamber CH1 has a gas atmosphere of argon and oxygen.
2 is a gas atmosphere of argon and nitrogen, the sixth sputter chamber 0H6i is a gas atmosphere of only argon, and the fourth sputter chamber CHA is a gas atmosphere of argon and pixels. For example, λ forms a magneto-optical recording 1-. If a large amount of nitrogen gas is mixed into the sputtering chamber CH5, the magnetic or optical properties of the magneto-optical recording layer will gradually deteriorate. Therefore, the gas atmosphere in each sputtering chamber does not interfere with each other.1. /-1 required a gate valve GVdj.
従来のインライン型スパッタ装置の場汁、トレー２＞３
各スパンタチヤンバーを移動するために開閉が必要で、
ゲートバルブの信頼性を高めなければならないが、現在
のゲートバルブの開閉の信頼性は低く、約１００ｏ〜ｔ
ｎｎｎｎ回開閉を繰り返すとゲートバルブをｘｍしなけ
ればならないという問題かあつ友。更に大きな問題は、
ゲートバルブ方式のインラインスパッタはスループット
、いわゆる製造能力が低いことである。実際ポリカーボ
ネイト等のプラスチック基板の場脅はターゲットからの
輻射熱を勘案して、各１（ｌは１〜２分の時間で形成で
きるのであるが、スパッタ終了１寺のガス圧力の１０−
” 〜１ ｌ］ −’ ＴＯｒｒ から％ １０−５〜
１Ｏ−７ＴＯｒｒの高真空に引くまで２〜５分を必要と
しスルー７’ツ）？下げていた。また、スパッタチャン
バー間をトレー力３移動するには１〜２分間時間金要し
、当然この聞はスパッタを止めなければならずやはりス
ループットｒ悪化させていｔ０本発明は、以上の問題点
を解決するためのものでスルーブツトはほぼスパッタ時
間だけに依存する高生産性インライン型スパッタ装置ヲ
提供するものである。Tray 2>3 of conventional in-line sputtering equipment
Opening and closing is required to move each span tachium,
It is necessary to improve the reliability of gate valves, but the reliability of opening and closing of current gate valves is low, and the reliability of opening and closing of gate valves is low.
The problem is that if you repeat opening and closing nnnn times, you will have to close the gate valve xm. The bigger problem is
Gate valve type in-line sputtering has a low throughput, so-called manufacturing capacity. In reality, plastic substrates such as polycarbonate can be formed in a time of 1 to 2 minutes, taking into account the radiant heat from the target, and the gas pressure at the end of sputtering is 10 -
" ~1 l] -' TOrr to% 10-5~
It takes 2 to 5 minutes to draw a high vacuum of 10-7 TOrr (through 7')? It was lowered. In addition, it takes 1 to 2 minutes to move the tray between sputter chambers with a force of 3, and of course sputtering must be stopped during this time, which also worsens the throughput.The present invention solves the above problems. The throughbut provides a high productivity in-line sputtering system that depends almost exclusively on sputtering time.
本発明のスパッタ装置は、異層のターゲットを連続的に
スパッタ、または異（伽のガス雰囲気で連続的にスパッ
タするインライン型スパック装−において、各々のスパ
ッタチャツバ−間にオリフィスゲート金偏えたことを％
徴とする。The sputtering apparatus of the present invention is an in-line type sputtering apparatus that continuously sputters targets of different layers or sputters continuously in different gas atmospheres. %
be a sign.
本発明の上記構成によれば谷スパッタチャンバーが異ｄ
のガス雰囲気にもかかわらず相互影響のないスパッタリ
ングｋ ’ｏｆ 能にしたものである。According to the above configuration of the present invention, the valley sputtering chamber has different d
This allows sputtering to occur without mutual influence despite the gas atmosphere.
不発明全実施νりに基づいて詳述する。 A detailed description will be given based on the complete implementation of the invention.
第１図が本発明のスパッタ装置の主視（９である。FIG. 1 is a main view (9) of the sputtering apparatus of the present invention.
各スパッタチャンバー間にオリフィスケート０（）をも
つ。オリフィスゲート部の斜視図ｆｃ第２図に示しｔｏ
さらにオリフィスゲート空間にアルゴン等の不活性ガス
Ｇを導入するガス導入系ＧＬをもつ。オリフィスゲート
の抵抗により第５図に示すようにガスａＩｆ分布に傾き
が生ずる。即ち、オリフィスケートＯＧ内は藁ガス責度
Ｈ（）となり′！ｔスパッタチャンバーは低ガスｄ［Ｌ
Ｇとなる。There is an orifice scale 0 () between each sputter chamber. A perspective view of the orifice gate shown in Figure 2.
Furthermore, it has a gas introduction system GL that introduces an inert gas G such as argon into the orifice gate space. The resistance of the orifice gate causes a slope in the gas aIf distribution as shown in FIG. In other words, the straw gas liability inside the orifice skate OG becomes H()′! The sputtering chamber is equipped with a low gas d[L
It becomes G.
具体的には、通常のスパッタではスパッタチャンバーの
ガス圧はＩ ｎ ”” ＴＯｒｒ 〜５Ｘ １ ｒｌ
−’ Ｔ’Ｏｒｒが一般である。一方１本ｆｅｌ１１構
成のオリフィスゲート内のガス圧は１０−１〜１０″″
” Ｔｏｒｒとできる。本発明のオリフィスゲートを用
いて、第６図に示した光磁気記録媒体を製造する装置構
成にしたものか第１図のスパッタ装置である。これを順
に説明する。Specifically, in normal sputtering, the gas pressure in the sputtering chamber is I n "" TOrr ~ 5X 1 rl
-'T'Orr is common. On the other hand, the gas pressure inside the orifice gate with one fel11 configuration is 10-1 to 10''
The orifice gate of the present invention can be used to manufacture the magneto-optical recording medium shown in FIG. 6 using the sputtering apparatus shown in FIG. 1. This will be explained in order.
ケートバルブＧＶを閉めた陵ローティングチャン・・Ｌ
を大気圧とし基板をトレーＴＯに数１０枚セットした後
トレーを数１０，１父ローデイングする。Ryo Rotoring Chan who closed Kate Valve GV...L
After setting several tens of substrates on the tray TO at atmospheric pressure, the tray is loaded several tens of times.
１１１−’〜ＩＧ−’ＴＯｒｒ ｔで＄ｅ空引き、基板
のガス出しを所定の時間行った後ローディングチャン／
・−りにアルゴンガスＧを導入し、以降ゲートノ＜バル
ブＧＶは開にした状態全保持させる。第６図に示すｍ構
造とする場合には、スパンタチャンノ＼−１ＣＨ１には
酸］ヒケイ素ターゲットＴＡ１、スノくツタチャンバー
２０Ｈ２には、窒化アルミニウムターゲットＴＡ２、ス
＜（ツタチャンバー５（、Ｈ５にはテルビウム−鉄−コ
バルトターゲットＴＡ５゜スパッタチャンバー４ＣＨ４
には、窒化アルミニウムターゲットＴＡＩｉとし、スパ
ッタチャンバー１ＣＨ１には、オリフィスゲートＯＧか
ら流入するアルゴンガスの他に酸素ガスＧＯｉ、スノく
ツタチャンバー２０Ｈ２には、ｉ素ガスＧＮｆス／：７
タチャン％−４０ｊＨＡには、窒素ガス（）Ｎを反応性
ガスとして導入した。ターゲットのス／くツタレート、
光学特性を確保する意味から、アルゴンガス圧＋ １１
−’ Ｔｏｒｒ〜５ ｘ １ ｎ −’ Ｔｏｒｒに対
し、上ｄｅａ素ガス及び窒素ガスはアルゴンガスに対し
１０１１〜丁の分圧、
即ち、１０′″’ ＴＯｒｒ 〜１０′″’ ＴＯｒｒ
導入するのか一般である、前述した様にオリフィスゲー
ト部は１０−ｌ〜１０−２Ｔｏｒｒのアルゴンガスで充
満している。この状態でスパッタ全連続させ、トレーを
順次送って、アンローディングチャンバーＵＬＫｇめる
。全てのローディングトレーに６２ ’ＩＫが終了した
後、ゲートバルブＧＶｉ閉め、アンローディングチャン
バーＵＬ’ｊ″大気圧にリークさせ元Ｓ気記録媒体を作
製した。本発明のオリフィスゲート音用いて成膜したデ
ィスクでの記録再生信号は従来のゲートバルブを用いて
成ｆｌｕしたディスクでの記録再生信号に較べ、０．５
〜１ｄＢの劣化しかなかつ７ｔ。111-' ~ IG-' After emptying $e with TOrr t and degassing the substrate for a specified time, load the loading chamber/
・Introduce argon gas G, and thereafter keep the gate valve GV open. In the case of the m structure shown in FIG. Terbium-iron-cobalt target TA5° sputter chamber 4CH4
The aluminum nitride target TAIi is used, the sputtering chamber 1CH1 is filled with oxygen gas GOi in addition to argon gas flowing from the orifice gate OG, and the snow ivy chamber 20H2 is filled with an i-based gas GNf/:7
Nitrogen gas ()N was introduced into Tachan%-40jHA as a reactive gas. target's s/ktutalate,
To ensure optical properties, argon gas pressure + 11
-' Torr ~ 5 x 1 n -' Torr, the upper dea elementary gas and nitrogen gas have a partial pressure of 1011 to 10 mm with respect to argon gas, that is, 10'''' TOrr ~ 10'''' TOrr
As mentioned above, the orifice gate section is generally filled with argon gas at 10-1 to 10-2 Torr. In this state, the sputtering is completely continued, and the trays are sent one after another to fill the unloading chamber ULKg. After 62' IK was completed on all the loading trays, the gate valve GVi was closed and the unloading chamber UL'j'' was leaked to atmospheric pressure to produce an original S gas recording medium.The film was formed using the orifice gate sound of the present invention. The recording/reproducing signal on a disk is 0.5 times smaller than that on a disk created using a conventional gate valve.
Only ~1dB deterioration and 7t.
本発明のオリフィスゲートを史に改良したものを第４図
に示した。まず第ａ ＋３＜Ｉ （ａ）及び（ａｊは、
前述した本発明の実施例図。第４１メ１（ｂ）及び（６
１、（ｃ）及びｂ′）はその改良であり、オリフィスゲ
ートのガス流量をさらに低くするための抵抗となる凹凸
、段差金オリフィスゲート中に設けたものである、不！
４成によるオリフィスゲート−ｒ有したインライン檀ス
パッタ１ｒＩｔ金用いて、４６図のＩｌ成のディスクを
作製し、従来のゲートバルブ方式のインライン型スパッ
タ装瞬を用いて、第６図の構成のディスク全作製し、比
較したところ、再生信号出力には全く差かなかった。FIG. 4 shows an improved version of the orifice gate of the present invention. First, a+3<I (a) and (aj are
FIG. 3 is an embodiment diagram of the present invention described above. 41st me 1(b) and (6
1, (c) and b') are improvements to this, in which irregularities and steps are provided in the metal orifice gate to act as resistance to further lower the gas flow rate of the orifice gate.
A disk with the structure shown in FIG. 46 was fabricated using in-line sputtering with an orifice gate-r using 1rIt gold, and a disk with the structure shown in FIG. When all were manufactured and compared, there was no difference at all in the reproduced signal output.
本発明のオリフィスゲートを用いたインライン型スパッ
タ装置ハ、各スパッタチャンバーか異種のスパッタガス
雰囲気であるにもかかわらず、相互干渉のないという特
徴を有している。艶に、ゲートバルブ方式のインライン
型スパッタｊ装置に較べ、スパッタ終了後の排気時間か
不要、トレーを連続的に動かして成膜でき、スルーブツ
トカニ高いゲートバルブを使用しないため装置の耐久性
か高くなるという各種の効果を有する・The in-line sputtering apparatus using the orifice gate of the present invention is characterized in that there is no mutual interference even though the sputtering chambers have different sputtering gas atmospheres. In addition, compared to in-line sputtering equipment using a gate valve method, there is no need for exhaust time after sputtering is completed, the tray can be moved continuously to form a film, and a gate valve with high throughput is not used, making the equipment more durable. It has various effects such as
第１図が本発明の一実施例のスパッタｆ７ｃ１ｍの上祝
図。
第２図が本発明の一実施例のオリフィスゲートの斜視図
。
第５図は１本発明のオリフィスゲートにスパッタガスを
導入した時のガス濃度分布を示したスパッタ装置の一部
の主視図。
第４図は本発明の一実施例で、（ａ）は、基本的なオリ
フィスゲートの主視図。（ｂ）は、凹凸を有したオリフ
ィスゲートの主視図。（ｃ）は、段差を有したオリフィ
スゲートの主視図。また、 （ａｌ 、 （≦）、、（
Ｃ′）は各オリフィスゲートの斜視図である。
第５図は、従来のスパッタ装置の主視図。
第６図は、光磁気記録媒体の構成図。
ＯＧ・・・・・・オリフィスゲート
ＧＶ・・・・・・ゲートバルブ
Ｐ・・・・・・・・・真空ポンプ
Ｇ・・・・・・・・・不活性ガス
Ｇｏ・・・・・・酸素
ＧＮ・・・・・・窒素ガス
ＬＧ・・・・・・低ガス濃度
ＨＧ・・・・・・高ガス製靴
ＬＧＳ・・・低カス濃度スペース
ＨＧ８・・・高カス濃度スペース
ＴＡ・・・・・・ターゲット
ＴＢ・・・・・・ターゲット
６−１・・・プラスチック基板
６−２・・・酸化物層
６−６・・・窒化物層
６−４ ・・・ヴ白磁プＬｉ己録ｊ運
６−５・・・窒化物層
以 上
第 １ 図FIG. 1 is a congratulatory drawing of a sputter f7c1m according to an embodiment of the present invention. FIG. 2 is a perspective view of an orifice gate according to an embodiment of the present invention. FIG. 5 is a perspective view of a part of the sputtering apparatus showing the gas concentration distribution when sputtering gas is introduced into the orifice gate of the present invention. FIG. 4 shows an embodiment of the present invention, and (a) is a main perspective view of a basic orifice gate. (b) is a main perspective view of an orifice gate with unevenness. (c) is a main perspective view of an orifice gate with a step. Also, (al, (≦),,(
C') is a perspective view of each orifice gate. FIG. 5 is a main perspective view of a conventional sputtering apparatus. FIG. 6 is a configuration diagram of a magneto-optical recording medium. OG... Orifice gate GV... Gate valve P... Vacuum pump G... Inert gas Go... Oxygen GN...Nitrogen gas LG...Low gas concentration HG...High gas shoe LGS...Low scum concentration space HG8...High scum concentration space TA... ...Target TB...Target 6-1...Plastic substrate 6-2...Oxide layer 6-6...Nitride layer 6-4...White magnetic plate Li self record 6-5...Nitride layer or above Figure 1
Claims (2)
種のガス雰囲気で、連続的にスパッタするインライン型
スパッタ装置において、各々のスパッタチャンバー間に
オリフィスゲートを備えたことを特徴とするスパッタ装
置。(1) An in-line sputtering apparatus that continuously sputters different types of targets or continuously sputters in different gas atmospheres, characterized in that an orifice gate is provided between each sputtering chamber.
一部のガス濃度がスパッタチャンバー空間のガス濃度よ
り高くしたことを特徴とする特許請求の範囲第一項記載
のスパッタ装置。(2) The sputtering apparatus according to claim 1, wherein the gas concentration in all or part of the space occupied by the orifice gate is higher than the gas concentration in the sputtering chamber space.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3442586A JPS62192580A (en) | 1986-02-19 | 1986-02-19 | Sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3442586A JPS62192580A (en) | 1986-02-19 | 1986-02-19 | Sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62192580A true JPS62192580A (en) | 1987-08-24 |
Family
ID=12413853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3442586A Pending JPS62192580A (en) | 1986-02-19 | 1986-02-19 | Sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62192580A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02115366A (en) * | 1988-10-25 | 1990-04-27 | Sumitomo Special Metals Co Ltd | Sputtering device |
| JP2002533565A (en) * | 1998-12-18 | 2002-10-08 | ピーピージー・インダストリーズ・オハイオ・インコーポレイテッド | Method and apparatus for producing a silver-based low-e coating without using a metal primer layer and articles of manufacture thereby |
| US6533534B2 (en) * | 1993-05-03 | 2003-03-18 | Unaxis Balzers Aktiengesellschaft | Method for improving the rate of a plasma enhanced vacuum treatment |
| RU2496913C2 (en) * | 2011-12-28 | 2013-10-27 | Общество с ограниченной ответственностью "Научно-производственное предприятие "Уралавиаспецтехнология" | Unit for ion-ray and plasma processing |
| CN103451614A (en) * | 2013-09-06 | 2013-12-18 | 肇庆市科润真空设备有限公司 | Continuous coating device and method for lamp lens |
| DE102021134254A1 (en) | 2021-12-22 | 2023-06-22 | Rainer Cremer | Inline system for coating individual substrates or groups of substrates and method for coating individual substrates or groups of substrates in an inline coating system |
-
1986
- 1986-02-19 JP JP3442586A patent/JPS62192580A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02115366A (en) * | 1988-10-25 | 1990-04-27 | Sumitomo Special Metals Co Ltd | Sputtering device |
| US6533534B2 (en) * | 1993-05-03 | 2003-03-18 | Unaxis Balzers Aktiengesellschaft | Method for improving the rate of a plasma enhanced vacuum treatment |
| JP2002533565A (en) * | 1998-12-18 | 2002-10-08 | ピーピージー・インダストリーズ・オハイオ・インコーポレイテッド | Method and apparatus for producing a silver-based low-e coating without using a metal primer layer and articles of manufacture thereby |
| RU2496913C2 (en) * | 2011-12-28 | 2013-10-27 | Общество с ограниченной ответственностью "Научно-производственное предприятие "Уралавиаспецтехнология" | Unit for ion-ray and plasma processing |
| CN103451614A (en) * | 2013-09-06 | 2013-12-18 | 肇庆市科润真空设备有限公司 | Continuous coating device and method for lamp lens |
| DE102021134254A1 (en) | 2021-12-22 | 2023-06-22 | Rainer Cremer | Inline system for coating individual substrates or groups of substrates and method for coating individual substrates or groups of substrates in an inline coating system |
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