JPS62193741U - - Google Patents
Info
- Publication number
- JPS62193741U JPS62193741U JP8265786U JP8265786U JPS62193741U JP S62193741 U JPS62193741 U JP S62193741U JP 8265786 U JP8265786 U JP 8265786U JP 8265786 U JP8265786 U JP 8265786U JP S62193741 U JPS62193741 U JP S62193741U
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- tungsten disk
- concentric
- junction
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 150000003657 tungsten Chemical class 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
Landscapes
- Thyristors (AREA)
Description
第１図は本考案の一実施例を示す素子断面図、
第２図は第１図の素子構造工程図、第３図は従来
の素子断面図である。 １……シリコン、８……タングステン円板、９
……ロウ材、１０……ベベル面、１１……シリコ
ーンゴム、１２……タングステン板、１４，１６
……銅ポスト。
第２図は第１図の素子構造工程図、第３図は従来
の素子断面図である。 １……シリコン、８……タングステン円板、９
……ロウ材、１０……ベベル面、１１……シリコ
ーンゴム、１２……タングステン板、１４，１６
……銅ポスト。
Claims (1)
- Ｐ１Ｎ１Ｐ２Ｎ２の４層３接合に素子形成した
シリコンのカソード側周辺部に同心円状のタング
ステン円板を合金接着し、このタングステン円板
を基台として前記シリコン周面に順方向耐圧を上
げる角度に研摩加工したベベル面を形成した構造
を特徴とする半導体素子。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8265786U JPS62193741U (ja) | 1986-05-30 | 1986-05-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8265786U JPS62193741U (ja) | 1986-05-30 | 1986-05-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62193741U true JPS62193741U (ja) | 1987-12-09 |
Family
ID=30935507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8265786U Pending JPS62193741U (ja) | 1986-05-30 | 1986-05-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62193741U (ja) |
-
1986
- 1986-05-30 JP JP8265786U patent/JPS62193741U/ja active Pending