JPS62193Y2 - - Google Patents

Description

[Detailed Description of the Invention] This invention relates to a semiconductor device subjected to antistatic treatment.

Semiconductor devices such as ICs and LSIs are extremely susceptible to static electricity due to the characteristics of semiconductors, especially MOS type ICs.
The gate can instantly break and become defective due to static electricity accumulated in the human body or a small amount of static electricity generated due to friction and contact with other objects during transportation. In addition, recent high-performance LSIs of 16 or 64 kilobits are designed to operate with a small voltage difference of about 0.2 volts, so if static electricity is transmitted to them, they may malfunction, or in severe cases, the circuit may be disconnected. It becomes useless. Additionally, the magazine stay used as a transport case for semiconductor devices has traditionally been made of metal, and has been grounded. I couldn't figure out how many pieces were left inside. Therefore, a device made of transparent plastic is used, but when a semiconductor device slides inside this plastic magazine stay, static electricity may be generated and the semiconductor may be destroyed. However, since plastic is often used in packaging materials for semiconductors, and the semiconductor devices themselves are insulated with plastic, static electricity is likely to be generated due to frictional contact. For example, ceramic DIPS in a plastic tube has a voltage of 700V.
4000 V for ceramic DIPS arranged in a plastic tray, 4000 V for ceramic DIPS arranged in a plastic tray;
DIPS generates 5,000V of static electricity, ICs with air caps removed generate 20,000V, ICs wrapped in plastic foam generate 11,000V, and ICs removed from packaging for repair generate 6,000V of static electricity. Therefore, measures to prevent static electricity are taken at each stage of semiconductor device manufacturing, storage, transportation, installation into equipment, and operation of equipment. These measures include antistatic ground bonding, humidification, use of conductive materials, use of antistatic agents, use of static eliminators, wearing antistatic work clothing, use of electrostatic shoes, and use of conductive floors. , measures are taken to suppress discharge. However, these static electricity prevention measures are mainly taken in the respective environments surrounding semiconductor devices, and equipment must be installed at each stage of manufacturing, storage, transportation, etc., and the static electricity prevention effect is not perfect. It was hard to describe it as something special. In addition, protective containers for semiconductor devices are made with conductivity, but conductivity imparts characteristics such as instantaneous discharge and inductive charging to semiconductors, so This is a questionable measure to prevent electrical damage.

This idea was devised in consideration of these points.Instead of conventional measures to prevent static electricity in the environment surrounding semiconductor devices, by applying antistatic treatment to the semiconductor devices themselves, it is possible to prevent frictional contact with other objects. The purpose is to provide a semiconductor device that does not generate static electricity even when exposed to electricity, and therefore does not cause electrostatic damage or malfunction of various devices, and can fully demonstrate the functions of semiconductor devices. As described above, it is not necessary to take anti-static measures at each stage of semiconductor manufacturing, transportation and storage, installation into various devices, etc., and the handling of semiconductor devices becomes easier.

The main body of this semiconductor device is covered with plastic such as epoxy resin to provide insulation, but the conventional methods for applying an antistatic agent to this surface include a surface coating method and a method of kneading the antistatic agent into resin. . However, in general, all of these methods have drawbacks. That is, in the surface coating method, the state of charge on the resin surface before coating has a considerable influence on the coating formation, and non-uniformity in charge distribution is related to non-uniformity and discontinuity in coating film thickness. Therefore, the thickness of the coating film inevitably increases, and economic disadvantages have been pointed out, such as the time required for the drying process during the coating process, as well as the problem of stickiness and appearance of the surface after treatment. There were also problems with durability (sustainability). In addition, in the resin kneading method, it is extremely difficult to select an antistatic agent that is compatible with the plastic material, and due to the compatibility between the antistatic agent and the plastic, the rate of bleeding to the surface, unevenness of bleeding, etc. does not necessarily form a uniform, continuous film over the entire surface. Variations in these coatings cause variations in the antistatic effect.

Therefore, in this invention, unlike these methods, a uniform and continuous ultra-thin film made of an antistatic agent is formed to achieve the above object. The structure of this device is that the surface tension of a dilute aqueous solution or aqueous dispersion containing a very small amount of antistatic agent is reduced to 30 dyne/cm25℃ or less using a fluorine-based surfactant, and then atomized using an appropriate method. This aerosol with a particle size of 5μ or less is applied to the main body of the semiconductor device and the outer surface of each terminal,
This is a semiconductor device that has been subjected to antistatic treatment in which a uniform and continuous ultra-thin film made of an antistatic agent is formed on the outer surface.

An embodiment of this invention will be described below with reference to the drawings.

1 is a semiconductor device, 2 is a main body of the semiconductor device 1, and this main body 2 is covered with a synthetic resin such as epoxy resin. 3 is a large number of terminals protruding from both sides of the main body 2; 4 is a uniform and continuous ultra-thin film made of an antistatic agent that covers the outer surfaces of the main body 2 and the terminals 3; This ultra-thin film was previously filed in Japanese Patent Application No. 56-143817 (Japanese Unexamined Patent Publication No. 58-1989).
This is similar to the configuration of the ultra-thin film in Publication No. 45237). That is, a dilute aqueous solution or aqueous dispersion containing a very small amount of antistatic agent has a surface tension of 30 dyne/cm25°C or less using a fluorine-containing surfactant, and is made into a fume by an appropriate method. An aerosol selected to have a particle size of 5 μm or less is exposed to the outer surface of the semiconductor device 1 and adsorbed. As a result, the particles do not agglomerate and spread over the outer surface, and in combination with the fineness of the particles, moisture evaporates rapidly, forming an ultra-thin film made of antistatic agent with a thickness of less than 400 mμ, that is, less than the wavelength of visible light. are uniformly and evenly formed on the outer surface of the semiconductor device 1. FIG. 3 shows an enlarged sectional view of the ultra-thin film 4 formed on the outer surface of the semiconductor device 1. 4 are covered and formed continuously.

This device has the above-described structure, and even if it is placed in a packaging material such as a transparent plastic magazine stick, static electricity will not be generated in either the device or the packaging material. Therefore, there is no need for conventional treatments such as imparting conductivity to the packaging material. This is because this invention forms a uniform and continuous ultra-thin film 4 on the outer surface of the semiconductor device 1, so that static electricity is not generated even when it comes into frictional contact with other objects, and the antistatic effect can be maintained for a long time. be. In this way, in this invention, since the semiconductor device itself has an antistatic effect, there is no need to take antistatic measures at each stage of manufacturing, storage, transportation, and integration into various devices. Moreover, in this invention, the main body 2 and terminals 3 of the semiconductor device 1 are covered with an extremely thin film 4, so that the respective substrates do not come into direct contact with the outside air.
It is not affected by the atmosphere or environment in which the semiconductor device 1 is placed. In addition, since the semiconductor device 1 of this invention connects the terminal 3 to the equipment by soldering, the ultra-thin film 4 of the terminal 3 is blown away by the heat of the solder and the conductor of the terminal 3 is exposed. does not become an obstacle. Although the extremely thin film 4 covers the entire circumference of the semiconductor device 1, there is no electrical conduction between the terminals 3. In other words, since the resistivity is high in the plane direction of the ultra-thin film 4 (actual value 10 ¹⁴ ohms/cm), the ultra-thin film 4
Adjacent terminals 3 do not conduct through each other.

As described above, this invention applies antistatic treatment to the semiconductor device 1 itself, and this antistatic treatment forms a uniform and continuous ultra-thin film 4 over the outer surface of the semiconductor device 1, preventing it from coming into contact with other objects. It does not generate static electricity even when it is damaged, has a long-lasting antistatic effect, and eliminates electrostatic damage and malfunctions caused by static electricity when incorporated into equipment.

[Brief explanation of the drawing]

The drawings show an embodiment of this invention; FIG. 1 is a semiconductor device of this invention, FIG. 2 is a sectional view of this invention, and FIG. 3 is a partially enlarged sectional view of the main body of this invention. In the figure, 1 is the semiconductor device, 2 is the main body, and 3 is the semiconductor device.
is a terminal, and 4 is an extremely thin film.

Claims (1)

[Scope of utility model registration request] A dilute aqueous solution or aqueous dispersion containing a very small amount of antistatic agent has a surface tension of 30 dyne/cm25°C or less using a fluorine-containing surfactant and is made into atomized by an appropriate method, and the particles of this aerosol are An antistatic treatment characterized in that a material selected to have a diameter of 5 μm or less is adhered to the outer surface of the main body and each terminal of a semiconductor device to form a uniform and continuous ultra-thin film made of an antistatic agent on the outer surface. Semiconductor device with