JPS62202076A - Formation of vapor deposited film - Google Patents

Abstract

PURPOSE:To obtain uniform film thickness or the required distribution of film thickness by sending the guiding gases in the directions crossing the evaporation directions and controlling the evaporation directions in case of forming a film wherein the vapor of the constitutional components of the film is allowed to collide against a material to be filmed and stuck thereon. CONSTITUTION:The constitutional components of a film to be formed are evaporated from the crucibles 2, 3 for a vapor deposition source under reduced pressure. Then the guiding gases are blown out through the blowing-out ports 6, 7 in the directions crossing the evaporation directions. The evaporation directions of the constitutional components of the film are controlled by the guiding gases and the distribution of thickness of the film stuck on the surface of a material 1 to be filmed is controlled.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an improvement in a method for forming a deposited film. The method for forming a deposited film of the present invention can be applied to all PVD methods including vacuum deposition.

[Prior Art] Conventionally, PVD is well known as a typical method for forming a vapor deposited film. This PVD method includes all methods that mainly utilize physical changes to form a film, such as the vacuum all method and the ion blating method.
Generally, the basic structure of an apparatus used for carrying out method D includes a substrate as a film-forming object, a vapor deposition source, and a guide gas flow source that guides the direction of evaporation of film constituents. ′［
Problems to be Solved by the Invention] In forming a deposited film, obtaining a uniform Il* thickness and a desired film thickness distribution on a substrate is an important issue that affects the quality of film formation. However, in the conventional PVD method, although various attempts have been made, there has been no method that can reliably control the film thickness and film thickness distribution.

An object of the present invention is to provide a method for forming a deposited film that reliably provides a uniform film thickness and a desired film thickness distribution.

[Structure of the Invention] (Means for Solving the Problems) The vapor deposited film forming method of the present invention evaporates film constituents of a film to be formed under reduced pressure, and collides the film constituents with an object to be coated. In a method for forming a deposited film in which a film containing the layer constituents is formed on the surface of the object by adhesion, a guide gas is sent in a direction crossing the evaporation direction of the film constituents, and the guide gas flow causes the film to be formed. This method is characterized in that the direction of evaporation of the constituent components is controlled to manage the thickness distribution of the film deposited on the surface of the object to be film-formed.

The vapor deposited film forming method of the present invention actively utilizes the flow of a guide gas introduced into the film forming apparatus to guide the evaporation direction of film constituents, thereby achieving a uniform film thickness or a desired film thickness distribution. The purpose is to direct the gas blowout in a direction that intersects with the flow of the evaporated film constituents (e.g. evaporated particles), and to direct the flow of gas in a direction that intersects with the flow of the evaporated film constituents (e.g. evaporated particles). It is determined so that the membrane constituents are biased towards the area where the film is located.

(Detailed explanation of the structure of the invention) Here, the film constituents are, for example, simple metals such as gold, silver,
Copper, nickel, chromium, etc. or their alloys, etc.
A component that constitutes a vapor deposition material made of oxides, nitrides, etc., and refers to evaporated particles that are melted and vaporized by heating of a vapor deposition source to form a film on a substrate.

The object to be film-formed is a substrate on the surface of which the above-mentioned film constituents are attached to form a film of a desired metal or the like.

The guide gas flow is a gas flow blown out from a gas outlet introduced into a film forming apparatus, and has the function of guiding or changing the flow of evaporated particles.

The reactive gas is a gas that can react with evaporated particles to form a film, and is appropriately selected depending on the vapor deposition material used.

An inert gas is a gas that does not react with evaporated particles. During film formation, the substrate, which is the object to be filmed, is driven in one direction, and the evaporation source and guide gas are introduced at a position intersecting this driving direction. The device is now oriented.

Figure 1 shows the direction of movement of the substrate 1 and the positional relationship between the evaporation source crucibles 2 and 3 during deposition, and Figure 2 shows the film thickness distribution in the direction (A-A cross section) perpendicular to the direction of movement of the substrate 1. .

Two evaporation source crucibles 2 and 3 were installed in a direction perpendicular to the direction of movement of the substrate 1 indicated by the arrow in FIG. At this time, the substrate 1 was moved at a constant speed.

As a result, the film thickness distribution shown in FIG. 2 was obtained. That is, it was confirmed that the film thickness was thinner at the center of the substrate 1 than at the edges. Incidentally, the film thickness deviation between the center and end portions was ±10% from the average value do when glass with a width of 3 Qcm was used as the substrate.

Based on the experimental results shown in FIGS. 1 and 2, gas introduction pipes 4 and 5 are located near each vapor deposition source 2 and 3,
The blowers (spools 6 and 7) were arranged as shown in FIG. 3, pointing toward each end of the substrate 1 where the film thickness was to be reduced. Then, the guide gas flow flows out from the blow-off ports 6 and 7.As a result of film formation, the vapor deposition source 2
The flow of the evaporated particles, which are the film constituents evaporated from 8 and 3, was biased toward both ends of the substrate 1 compared to the conventional method, so that a substantially uniform film thickness distribution was obtained as shown in FIG. The film thickness deviation was within ±3% of the average value.

Note that in this example, two IS sources were used, but W
& The number of sources is not limited to this. Further, the present invention can be used not only to obtain a uniform film thickness but also to obtain a desired film thickness distribution. That is, this can be achieved by directing the outlet of the gas introduction pipe toward the part where the film thickness is desired to be increased.

Furthermore, the guide gas to be introduced is not limited to a reactive gas that reacts with the film constituents to form a film forming substance, but may also be an inert gas that does not react with the film constituents.

As mentioned above, the scope of the present invention is extremely wide and applicable to all PVD methods including vacuum deposition.

[Effects of the Invention] The present invention ensures a uniform film thickness or a desired film thickness distribution on a substrate by simply positioning the guide gas flow in a direction crossing the evaporation direction of the film constituents from the evaporation source. can be obtained. Furthermore, since the film formation efficiency is improved compared to conventional methods, the time required for film formation can be shortened. Furthermore, when a reactive gas is used, the outlet of the reaction gas introduction tube is installed near the evaporation direction of the membrane constituents, so that the reaction between the gas and the membrane constituents is promoted and the reaction efficiency is improved. Therefore, the amount of reactive gas introduced can be reduced, and as a result, the inside of the vacuum chamber can be maintained at a lower pressure. Under this reduced pressure, the probability of collision and scattering between evaporated particles of film constituents and other particles (molecules of reactive gas, etc.) is also reduced, which also makes it possible to further shorten the film forming time.

[Brief explanation of drawings]

FIG. 1 is a schematic explanatory perspective view showing the positional relationship between the substrate and the evaporation source before applying the present invention, and FIG. 2 is a cross-sectional view of the substrate shown in FIG. 3 is a graph showing the film thickness distribution. FIG. 3 is a front view schematically illustrating an embodiment of the present invention, and FIG. 4 shows a film thickness distribution in a cross section of the substrate taken along the line A-A obtained by the embodiment. 1... Substrate 2.3... Evaporation source crucible 4.
5...Gas inlet pipe 6.7...Guiding gas outlet Patent applicant Toyota Motor Corporation Japan Auto Parts Research Institute Agent Patent attorney Hirodo Okawa Patent attorney Akio Maruyama

Claims (3)

[Claims] (1) Evaporate the film constituents of the film to be formed under reduced pressure,
In a method for forming a deposited film in which a film containing the film component is formed on the surface of the object by colliding and adhering the film component to the object, the film is guided in a direction perpendicular to the evaporation direction of the film component. A method for forming a deposited film, characterized in that the direction of evaporation of the film components is controlled by sending a gas, and the thickness distribution of the film adhered to the surface of the object to be film-formed is managed. (2) The method for forming a deposited film according to claim 1, wherein the guide gas is a reactive gas that reacts with the film constituents to form a film forming substance, or an inert gas that does not react with the film constituents. (3) The object to be film-formed is driven in one direction during film formation, and the direction connecting the evaporation position of the film constituents and the guide gas introduction position with respect to the object to be film-formed intersects the driving direction of the object to be film-formed. A method for forming a deposited film according to claim 1, which is in the direction of: