JPS622032B2 - - Google Patents
Info
- Publication number
- JPS622032B2 JPS622032B2 JP54157158A JP15715879A JPS622032B2 JP S622032 B2 JPS622032 B2 JP S622032B2 JP 54157158 A JP54157158 A JP 54157158A JP 15715879 A JP15715879 A JP 15715879A JP S622032 B2 JPS622032 B2 JP S622032B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- evaporation
- discharge
- source
- metal vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 本発明はイオンプレーテイング装置に関する。[Detailed description of the invention] The present invention relates to an ion plating apparatus.
近年、公害問題に端を発して、金属あるいはプ
ラスチツクスのメツキを真空蒸着法により行なう
方法が用いられつつある。真空メツキの方法とし
ては、従来から広く行なわれている通常の蒸着方
法によるもの、スパツタによる方法、あるいはイ
オンプレーテイングによる方法などが知られてい
るが、通常の蒸着方法によるものでは付着力が弱
く、スパツタよるものでは蒸着速度が遅く、また
イオンプレーテイングによるものでは蒸発金属お
よび被着基体が汚染される等の欠点をそれぞれ有
しており、一長一短がある。 In recent years, due to pollution problems, a method of plating metals or plastics by vacuum evaporation has been used. Vacuum plating methods include the conventionally widely used normal vapor deposition method, sputtering method, and ion plating method, but the adhesion force is weak when using normal vapor plating methods. The method using sputtering has disadvantages such as slow deposition rate, and the method using ion plating contaminates the evaporated metal and the substrate to which it is deposited, so each method has its advantages and disadvantages.
上記イオンプレーテイング法の１つとして、高
周波を用いて比較的高真空でイオンプレーテイン
グを行なう方法も知られているが、それでも
10-4torr台の真空度であり、蒸発金属の汚染およ
び被着基体表面のガスプラズマによる劣化は避け
られない。例えば、通常は水やアルコール等をは
じく性質を有するテフロンフイルムの表面に高周
波イオンプレーテイングで金属を蒸着すると、裏
面までガスプラズマの攻撃を受け、水やアルコー
ルをはじかなくなる。 As one of the above ion plating methods, a method of performing ion plating in a relatively high vacuum using high frequency is also known, but still
The vacuum level is on the order of 10 -4 torr, and contamination of the evaporated metal and deterioration of the surface of the adhered substrate due to gas plasma are unavoidable. For example, when a metal is deposited by high-frequency ion plating on the surface of a Teflon film, which normally has properties that repel water and alcohol, the back surface is attacked by gas plasma and no longer repels water or alcohol.
本発明は上記の点に鑑み、蒸発金属の汚染およ
び被着基体の劣化を防止できるイオンプレーテイ
ング装置を提供するものであり、蒸発源から蒸発
する金属蒸気の蒸発方向と直交する方向に磁界を
発生させる磁界発生源と、該磁界発生源により発
生せしめられた磁界の方向および前記金属蒸気の
蒸発方向の双方と直交する方向に放電を起こさせ
る放電電極とを、前記蒸発源の近傍に設け、上記
放電電極間に6KV以上の交流電圧を印加して蒸発
金属蒸気をイオン化させるように構成したもので
あり、これにより、10-6torr台の真空度で放電が
可能であり、蒸発金属の汚染および被着基板の劣
化を防止できるものである。以下その一実施例を
図面に基づいて説明する。 In view of the above points, the present invention provides an ion plating device that can prevent contamination of evaporated metal and deterioration of the adhered substrate, and in which a magnetic field is applied in a direction perpendicular to the evaporation direction of metal vapor evaporated from an evaporation source. A magnetic field generating source that generates a magnetic field and a discharge electrode that generates a discharge in a direction perpendicular to both the direction of the magnetic field generated by the magnetic field generating source and the evaporation direction of the metal vapor are provided in the vicinity of the evaporation source, The structure is such that an AC voltage of 6KV or higher is applied between the discharge electrodes to ionize the evaporated metal vapor.This enables discharge at a vacuum level of 10 -6 torr and prevents contamination of the evaporated metal. Also, it is possible to prevent deterioration of the adherend substrate. One embodiment will be described below based on the drawings.
第１図および第２図において、１は例えばるつ
ぼ中の金属から成る蒸発源であり、該蒸発源１の
近傍でかつその上方位置には、該蒸発源１から蒸
発する金属蒸気の蒸発方向と直交する方向に磁界
Ｈを発生させる磁界発生源２ａ，２ｂと、前記磁
界Ｈの方向および前記金属蒸気の蒸発方向の双方
と直交する方向に放電を起させる放電電極３ａ，
３ｂとが配設されている。前記放電電極３ａ，３
ｂは、電流計４を介して高圧電源を含む高圧回路
５に接続されている。前記蒸発源１と磁界発生源
２ａ，２ｂとの間には、磁界発生源２ａ，２ｂを
蒸発源１の輻射熱から保護する防熱板６が配設さ
れており、該防熱板６と前記蒸発源１との間に
は、シヤツター７が配設されている。また前記磁
界発生源２ａ，２ｂの上方位置には、金属イオン
を加速する加速電極８ａ，８ｂが配設されてお
り、該加速電極８ａ，８ｂは交流電源９に接続さ
れている。なお前記蒸発源１、磁界発生源２ａ，
２ｂ，放電電極３ａ，３ｂ、防熱板６、シヤツタ
ー７および加速電極８ａ，８ｂは真空蒸着槽１０
の内部に位置している。また１１は被着基体であ
る。 In FIGS. 1 and 2, 1 is an evaporation source made of metal in a crucible, for example, and a position near and above the evaporation source 1 indicates the evaporation direction of the metal vapor evaporated from the evaporation source 1. magnetic field generation sources 2a, 2b that generate a magnetic field H in orthogonal directions; a discharge electrode 3a that causes discharge in a direction orthogonal to both the direction of the magnetic field H and the evaporation direction of the metal vapor;
3b are arranged. The discharge electrodes 3a, 3
b is connected via an ammeter 4 to a high voltage circuit 5 including a high voltage power supply. A heat shield plate 6 is disposed between the evaporation source 1 and the magnetic field generation sources 2a, 2b to protect the magnetic field generation sources 2a, 2b from the radiant heat of the evaporation source 1. A shutter 7 is disposed between the shutter 1 and the shutter 1. Furthermore, acceleration electrodes 8a and 8b for accelerating metal ions are arranged above the magnetic field generation sources 2a and 2b, and these acceleration electrodes 8a and 8b are connected to an AC power source 9. Note that the evaporation source 1, the magnetic field generation source 2a,
2b, discharge electrodes 3a, 3b, heat shield 6, shutter 7, and accelerating electrodes 8a, 8b are connected to the vacuum deposition tank 10.
It is located inside. Further, 11 is an adherend substrate.
次に上記構成のイオンプレーテイング装置の操
作手順を説明する。まず真空蒸着槽１０内を
10-5torr程度にまで排気し、次に磁界発生源２
ａ，２ｂを動作させて磁界Ｈを発生させる。但し
磁界発生源２ａ，２ｂに永久磁石を用いた時に
は、この操作を必要としない場合がある。磁界発
生源２ａ，２ｂとしては、永久磁石あるいは電磁
石のいずれを用いてもよい。第３図ａ〜ｄにその
数例を示すが、各種公知の磁界のかけ方はすべて
利用でき、これら数例に限定されるものではな
い。なお、磁界発生源２ａ，２ｂは蒸発源１に近
いので、輻射熱によるキユーリー点以上への昇温
を防ぐため、蒸発源１との間に防熱板６を設ける
のが望ましい。防熱板６としては、鋼板１枚から
なるもので実用上充分な効果を有する。またこの
防熱板６を金属イオン加速のための加速電極の１
つとして利用することもできる。次に放電電極３
ａ，３ｂ間に高電圧を印加して放電を開始させ
る。この印加電圧は少なくとも6KV以上の交流電
圧である。また経済性の点では50Hzあるいは60Hz
の商業周波数を用いるのが好ましいが、イオン化
の効率の点では高周波電界の方が好ましい。放電
の開始は電流計４で知ることができる。次に真空
蒸着槽１０内の真空度を10-6torr台に上げ、シヤ
ツター７を開き、加速電極８ａ，８ｂに電圧を印
加して蒸着を開始する。この段階では放電電極３
ａ，３ｂ間でイオン化された金属蒸気の発色が見
られ、イオン化を目で確認することができる。実
験によれば、銅を蒸着した場合、鮮かな緑色が観
察された。 Next, the operating procedure of the ion plating apparatus having the above configuration will be explained. First, the inside of the vacuum deposition tank 10
Exhaust the air to about 10 -5 torr, then remove the magnetic field source 2.
A and 2b are operated to generate a magnetic field H. However, when permanent magnets are used as the magnetic field generation sources 2a and 2b, this operation may not be necessary. As the magnetic field generation sources 2a, 2b, either permanent magnets or electromagnets may be used. Some examples are shown in FIGS. 3a to 3d, but all known methods of applying a magnetic field can be used, and the invention is not limited to these examples. Note that since the magnetic field generation sources 2a and 2b are close to the evaporation source 1, it is desirable to provide a heat shield 6 between them and the evaporation source 1 in order to prevent the temperature from rising above the Curie point due to radiant heat. The heat shield plate 6 is made of a single steel plate and has sufficient practical effects. In addition, this heat shield plate 6 is used as one of the acceleration electrodes for accelerating metal ions.
It can also be used as one. Next, discharge electrode 3
A high voltage is applied between a and 3b to start discharging. This applied voltage is an alternating current voltage of at least 6KV or more. Also, in terms of economy, 50Hz or 60Hz
It is preferable to use a commercial frequency of 1, but high frequency electric fields are preferred in terms of ionization efficiency. The start of discharge can be detected using the ammeter 4. Next, the degree of vacuum in the vacuum deposition tank 10 is raised to 10 -6 torr level, the shutter 7 is opened, and a voltage is applied to the accelerating electrodes 8a and 8b to start deposition. At this stage, the discharge electrode 3
Color development of ionized metal vapor can be seen between a and 3b, and ionization can be visually confirmed. According to experiments, a bright green color was observed when copper was deposited.
このようにして蒸着された金属は当然のことと
して正に帯電しており、被着基体１１に絶縁物、
例えばテフロンシートを用いた場合、実験によれ
ば10秒程度の蒸着で＋150Vの帯電電圧が観測さ
れた。このことからも金属蒸気のイオン化が充分
に起つていることがわかる。 The metal deposited in this way is of course positively charged, and the insulator and
For example, when using a Teflon sheet, an electrostatic voltage of +150V was observed after about 10 seconds of deposition according to experiments. This also shows that sufficient ionization of the metal vapor occurs.
このように、磁界発生源２ａ，２ｂを設けて磁
界Ｈを発生せしめ、放電電極３ａ，３ｂにより前
記磁界Ｈの方向と直交する方向に放電を起させる
ので、10-6torr台の真空度で放電可能であり、し
たがつて蒸発金属の汚染および被着基体の劣化を
防止でき、しかもフアインパターンの蒸着が可能
である。 In this way, the magnetic field generation sources 2a and 2b are provided to generate the magnetic field H, and the discharge electrodes 3a and 3b cause discharge to occur in a direction perpendicular to the direction of the magnetic field H, so that a vacuum level of 10 -6 torr can be achieved. It is possible to perform discharge, thereby preventing contamination of the evaporated metal and deterioration of the substrate to which it is deposited, and moreover, it is possible to deposit a fine pattern.
以上説明したように、本発明にかかるイオンプ
レーテイング装置によれば、10-6torr台の真空度
でイオンプレーテイングを行なうことができるの
で、金属蒸気の汚染および被着基体の劣化を防止
し得、しかもフイアンパターンの蒸着が可能であ
る。 As explained above, according to the ion plating apparatus according to the present invention, ion plating can be performed at a vacuum level of 10 -6 torr, thereby preventing metal vapor contamination and deterioration of the adhered substrate. Moreover, it is possible to deposit a thin film pattern.
図面は本発明の一実施例を示しており、第１図
はその主要部を示す模式平面図、第２図はその模
式正面図、第３図ａ〜ｄはそれぞれ磁界発生源の
磁気回路例を模式的に示す説明図である。
１……蒸発源、２ａ，２ｂ……磁界発生源、３
ａ，３ｂ……放電電極。
The drawings show one embodiment of the present invention; FIG. 1 is a schematic plan view showing the main parts thereof, FIG. 2 is a schematic front view thereof, and FIGS. 3 a to 3 d are examples of magnetic circuits of magnetic field generation sources. It is an explanatory view showing typically. 1... Evaporation source, 2a, 2b... Magnetic field generation source, 3
a, 3b...Discharge electrode.
Claims (1)
交する方向に磁界を発生させる磁界発生源と、該
磁界発生源により発生せしめられた磁界の方向お
よび前記金属蒸気の蒸発方向の双方と直交する方
向に放電を起こさせる放電電極とを、前記蒸発源
の近傍に設け、上記放電電極間に6KV以上の交流
電圧を印加して蒸発金属蒸気をイオン化させるこ
とを特徴とするイオンプレーテイング装置。1. A magnetic field generation source that generates a magnetic field in a direction perpendicular to the evaporation direction of the metal vapor evaporated from the evaporation source, and a direction perpendicular to both the direction of the magnetic field generated by the magnetic field generation source and the evaporation direction of the metal vapor. An ion plating apparatus characterized in that a discharge electrode that causes discharge to occur is provided near the evaporation source, and an AC voltage of 6 KV or more is applied between the discharge electrodes to ionize the evaporated metal vapor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15715879A JPS5681671A (en) | 1979-12-04 | 1979-12-04 | Ion plating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15715879A JPS5681671A (en) | 1979-12-04 | 1979-12-04 | Ion plating apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5681671A JPS5681671A (en) | 1981-07-03 |
| JPS622032B2 true JPS622032B2 (en) | 1987-01-17 |
Family
ID=15643444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15715879A Granted JPS5681671A (en) | 1979-12-04 | 1979-12-04 | Ion plating apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5681671A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6009220B2 (en) * | 2012-05-21 | 2016-10-19 | 住友重機械工業株式会社 | Deposition equipment |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5123376B2 (en) * | 1972-10-17 | 1976-07-16 | ||
| JPS4990685A (en) * | 1972-12-29 | 1974-08-29 | ||
| JPS5232759B2 (en) * | 1973-08-07 | 1977-08-23 | ||
| JPS5258081A (en) * | 1975-11-10 | 1977-05-13 | Hitachi Ltd | Apparatus for attaching thin film |
-
1979
- 1979-12-04 JP JP15715879A patent/JPS5681671A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5681671A (en) | 1981-07-03 |
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