JPS6220689B2 - - Google Patents
Info
- Publication number
- JPS6220689B2 JPS6220689B2 JP55041691A JP4169180A JPS6220689B2 JP S6220689 B2 JPS6220689 B2 JP S6220689B2 JP 55041691 A JP55041691 A JP 55041691A JP 4169180 A JP4169180 A JP 4169180A JP S6220689 B2 JPS6220689 B2 JP S6220689B2
- Authority
- JP
- Japan
- Prior art keywords
- photoresist film
- pattern
- positive photoresist
- film
- diffraction grating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Bipolar Transistors (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Description
【発明の詳細な説明】
本発明はフオトレジスト膜からなるパターンの
形成方法に関し、詳しくは光、レーザー光、電子
線、Ｘ線など（以下「ビーム」という。）でフオ
トレジスト膜を露光して得られる微細パターンの
形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a pattern made of a photoresist film, and more specifically, the present invention relates to a method of forming a pattern made of a photoresist film, and more specifically, a photoresist film is exposed to light, laser light, electron beams, X-rays, etc. (hereinafter referred to as "beam"). The present invention relates to a method for forming the resulting fine pattern.
一般に、回折格子の製造或いはLSI、超LSIな
どの高密度微細集積回路素子の製造などにおいて
は、基材（又は素材）上に被覆したフオトレジス
ト膜にビームを照射して、フオトレジスト膜を
種々の目的に応じた微細形状のパターンに露光
し、現像後に化学的エツチング処理して基材上に
フオトレジスト膜からなるパターンを形成してい
た。 Generally, in the manufacture of diffraction gratings or high-density micro integrated circuit elements such as LSI and VLSI, a photoresist film coated on a base material (or material) is irradiated with a beam to form various photoresist films. A pattern made of a photoresist film was formed on the substrate by exposure to light in a microscopic pattern according to the purpose of the photoresist film, and after development, a chemical etching process was performed.
ところで、このフオトレジスト膜からなるパタ
ーンが微細になればなる程、パターンのエツジ部
のほんの僅かなダレ、歪などいわゆるエツジラフ
ネスが非常に重要な問題になつてくる。例えば、
上述した回折格子や集積回路素子など最終製品の
性能は、フオトレジスト膜のパターンのエツジラ
フネスが改善されるかどうかにかかつているとい
つても過言ではない。 By the way, as the pattern made of this photoresist film becomes finer, so-called edge roughness, such as slight sag or distortion at the edge of the pattern, becomes a very important problem. for example,
It is no exaggeration to say that the performance of final products such as the above-mentioned diffraction gratings and integrated circuit devices depends on whether the edge roughness of the photoresist film pattern is improved.
ビーム露光において、フオトレジスト膜のパタ
ーンのエツジラフネスが生じる原因は種々考えら
れる。例えば、ビーム源の振動或いはビーム経路
に存在する気中の微細の浮遊物などによつて、ビ
ームにゆらぎが生じ、このゆらいだビームによつ
てフオトレジスト膜が露光されるため、パターン
のエツジ部に露光むらが生じる。その結果、化学
的エツチング処理しても特にパターンのエッジの
谷部にレジストが残存し、エツジラフネスが生じ
るものと考えられる。 There are various possible causes of edge roughness in the pattern of a photoresist film during beam exposure. For example, vibrations of the beam source or minute floating objects in the air in the beam path cause beam fluctuations, and this fluctuating beam exposes the photoresist film, causing the edges of the pattern to Uneven exposure occurs. As a result, it is thought that even after chemical etching, resist remains particularly in the valleys of the edges of the pattern, resulting in edge roughness.
本発明者等は上記に鑑み、フオトレジスト膜か
らなるパターンのエツジラフネスを改善すべく鋭
意研究を重ねた結果、ポジ型フオトレジスト膜を
二重塗布することによつてエツジラフネスが改善
されることを見出した。 In view of the above, the inventors of the present invention conducted intensive research to improve the edge roughness of a pattern made of a photoresist film, and found that the edge roughness could be improved by double coating a positive photoresist film. Ta.
本発明はこの知見に基づくものであつて、基材
の一面に被覆したポジ型フオトレジスト膜を露光
した後、この露光したポジ型フオトレジスト膜上
に更にポジ型フオトレジスト膜を被覆して所望の
パターンを露光し、基材表面に至るまで被覆をエ
ツチング処理して基材表面にこれらのポジ型フオ
トレジスト膜からなるパターンを形成することを
特徴とする。 The present invention is based on this knowledge, and after exposing a positive photoresist film coated on one surface of a base material, the exposed positive photoresist film is further coated with a positive photoresist film as desired. The method is characterized in that a pattern consisting of these positive photoresist films is formed on the surface of the substrate by exposing the pattern to light and etching the coating down to the surface of the substrate.
以下、ホログラフイツク法によりフオトレジス
ト膜からなる回折格子パターンを形成する場合を
例にとつて本発明を詳しく説明する。第１図に示
す如く、SiO2の板１とその上に被覆したAu薄膜
２とからなる基材３上に第１のポジ型フオトレジ
スト膜AZ 1350 ４を被覆して紫外線露光した
（工程Ａ）。この露光したポジ型フオトレジスト膜
上に第２のポジ型フオトレジスト膜AZ 1350 ５
を被覆して、He−Cdレーザー（λ＝325nm）を
用いホログラフイツク露光を行つた（工程Ｂ）。
現像後、Au薄膜表面２に至るまでポジ型フオト
レジスト膜４，５を化学的にエツチング処理し、
Au薄膜表面２にポジ型フオトレジスト膜からな
る回折格子パターン６（周期370nm）を形成した
（工程Ｃ）。第１層に被覆したポジ型フオトレジス
ト膜４があらかじめ紫外線露光してあるため、こ
の上に第２のポジ型フオトレジスト膜５を塗布す
ると、第２の膜は第１の既に露光した膜に拡散し
ていく（このことは、合成膜の厚みが第１と第２
の膜厚の和よりも薄いことから確認される）。こ
の合成膜は単独のポジ型フオトレジスト膜とは異
なり、光のゆらぎが原因となつて生じる回折格子
パターンの谷部の残存レジストがなくなり、エツ
ジラフネスが極めて改善された。このことはその
後の工程Ｄで、ポジ型フオトレジスト膜からなる
回折格子６を遮蔽マスクとしてArイオンエツチ
ング（加速電圧500V、電流密度0.4mA／cm2、ガ
ス圧0.8×10-4Torrの条件）してSiO2板１上に形
成したAu薄膜の回折格子パターンの断面形状か
ら明らかに判ることである。すなわち、第２図Ａ
は本発明の二重塗布法により得られたAu回折格
子パターンの顕微鏡写真であつて、第２図Ｂに示
すように一重塗布して得られたAu回折格子パタ
ーンの顕微鏡写真に見られるようなパターンのエ
ツジラフネスが全くなく、周期性に優れたAu回
折格子が得られていることを示す。 The present invention will be described in detail below, taking as an example the case where a diffraction grating pattern made of a photoresist film is formed by a holographic method. As shown in FIG. 1, a first positive photoresist film AZ 1350 4 was coated on a base material 3 consisting of a SiO 2 plate 1 and an Au thin film 2 coated thereon and exposed to ultraviolet light (Step A). ). A second positive photoresist film AZ 1350 5 is formed on this exposed positive photoresist film.
was coated, and holographic exposure was performed using a He-Cd laser (λ=325 nm) (Step B).
After development, the positive photoresist films 4 and 5 are chemically etched down to the Au thin film surface 2.
A diffraction grating pattern 6 (period: 370 nm) made of a positive photoresist film was formed on the Au thin film surface 2 (Step C). Since the positive photoresist film 4 coated on the first layer has been exposed to ultraviolet light in advance, when the second positive photoresist film 5 is applied thereon, the second film will overlap the first already exposed film. (This means that the thickness of the synthetic film is
(This is confirmed by the fact that it is thinner than the sum of the film thicknesses.) This synthetic film differs from a single positive photoresist film in that there is no residual resist in the valleys of the diffraction grating pattern caused by light fluctuations, and the edge roughness is greatly improved. This was solved in the subsequent step D, where Ar ion etching was performed using the diffraction grating 6 made of a positive photoresist film as a shielding mask (acceleration voltage 500V, current density 0.4mA/cm 2 , gas pressure 0.8×10 -4 Torr conditions). This is clearly seen from the cross-sectional shape of the diffraction grating pattern of the Au thin film formed on the SiO 2 plate 1. That is, Figure 2A
is a micrograph of the Au diffraction grating pattern obtained by the double coating method of the present invention, and is similar to that seen in the micrograph of the Au diffraction grating pattern obtained by single coating as shown in Figure 2B. This shows that an Au diffraction grating with excellent periodicity and no pattern edge roughness was obtained.
以上詳述したように、本発明は二重塗布法によ
りポジ型フオトレジスト膜から成るパターンを形
成することを特徴とするものであつて、用いるポ
ジ型フオトレジスト膜及び露光ビームの種類は上
記実施例に限定されるものではない。 As detailed above, the present invention is characterized in that a pattern consisting of a positive photoresist film is formed by a double coating method, and the type of positive photoresist film and exposure beam used is the same as that described above. The examples are not limited.
第１図は本発明の一実施例による回折格子パタ
ーンの形成過程を示す図、第２図Ａ及びＢは本発
明の実施例で得られた回折格子パターンの電子顕
微鏡写真をそれぞれ示す。
図中の符号：１……SiO2板、２……Au薄膜、
３……基材、４……第１のポジ型フオトレジスト
膜、５……第２のポジ型フオトレジスト膜。
FIG. 1 is a diagram showing the process of forming a diffraction grating pattern according to an embodiment of the present invention, and FIGS. 2A and 2B are electron micrographs of the diffraction grating pattern obtained in the embodiment of the present invention. Codes in the figure: 1...SiO 2 plate, 2...Au thin film,
3... Base material, 4... First positive photoresist film, 5... Second positive photoresist film.
Claims (1)
膜を露光した後、この露光したポジ型フオトレジ
スト膜上に更にポジ型フオトレジスト膜を被覆し
て所望のパターンを露光し、基材表面に至るまで
被覆をエツチング処理して基材表面にこれらのポ
ジ型フオトレジスト膜から成るパターンを形成す
ることを特徴とするパターンの形成方法。1 After exposing the positive photoresist film coated on one side of the base material, the exposed positive photoresist film is further coated with a positive photoresist film and a desired pattern is exposed, reaching the surface of the base material. A method for forming a pattern, which comprises etching the coating to form a pattern made of these positive photoresist films on the surface of a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4169180A JPS56137634A (en) | 1980-03-29 | 1980-03-29 | Pattern forming |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4169180A JPS56137634A (en) | 1980-03-29 | 1980-03-29 | Pattern forming |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56137634A JPS56137634A (en) | 1981-10-27 |
| JPS6220689B2 true JPS6220689B2 (en) | 1987-05-08 |
Family
ID=12615442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4169180A Granted JPS56137634A (en) | 1980-03-29 | 1980-03-29 | Pattern forming |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56137634A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2742683B2 (en) * | 1986-08-08 | 1998-04-22 | 東洋通信機株式会社 | Manufacturing method of transmission diffraction grating |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5259580A (en) * | 1975-11-11 | 1977-05-17 | Matsushita Electric Ind Co Ltd | Photo etching method |
| JPS5389673A (en) * | 1977-01-19 | 1978-08-07 | Oki Electric Ind Co Ltd | Fine pattern forming method of semiconductor device |
-
1980
- 1980-03-29 JP JP4169180A patent/JPS56137634A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56137634A (en) | 1981-10-27 |
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