JPS62215836A - Optical wave guide type temperature sensor - Google Patents
Optical wave guide type temperature sensorInfo
- Publication number
- JPS62215836A JPS62215836A JP61060044A JP6004486A JPS62215836A JP S62215836 A JPS62215836 A JP S62215836A JP 61060044 A JP61060044 A JP 61060044A JP 6004486 A JP6004486 A JP 6004486A JP S62215836 A JPS62215836 A JP S62215836A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electric field
- temperature
- metal film
- temperature sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
高感度な温度計を実現するために、焦電効果によって生
じた電荷がつくる電界中に1つの光導波路を設け、温度
変化によって電界強度が変化することを利用して、電界
中の光導波路の屈折率を変化させ、該電界の影響を受け
ない領域にもう1つの光導波路を設け、両光導波路から
出射する光を合波して検知し、温度を検出する。[Detailed Description of the Invention] [Summary] In order to realize a highly sensitive thermometer, an optical waveguide is provided in the electric field created by the charges generated by the pyroelectric effect, and the electric field strength changes with temperature changes. The refractive index of the optical waveguide in the electric field is changed by using the electric field, another optical waveguide is installed in a region unaffected by the electric field, and the light emitted from both optical waveguides is combined and detected to determine the temperature. To detect.
本発明は、先導波路の屈折率が温度によって変化するこ
とを利用して、光学的に測温する光導波形温度センサに
関する。The present invention relates to an optical waveguide temperature sensor that optically measures temperature by utilizing the fact that the refractive index of a leading waveguide changes with temperature.
第4図は従来の光風波形温度センサを示す図である。基
板1上には、入射路2と出射路3が形成されており、入
射路2と出射路3間は、2木の並列な導波路4.5によ
って2つにY分岐している。FIG. 4 is a diagram showing a conventional light-air waveform temperature sensor. An input path 2 and an output path 3 are formed on the substrate 1, and the input path 2 and the output path 3 are Y-branched into two by two parallel waveguides 4.5.
そして片方の真波路4が他方の導波路5よりわずかに長
くなっている。One true waveguide 4 is slightly longer than the other waveguide 5.
。入射路2から、半導体レーザLDにより波長の安定し
た直線偏光を入射すると、2つの導波路4.5に分岐し
て伝播し、出射路3で合波して出射する。このとき、導
波路4と5の長さが異なるために、両導波路4.5を伝
播してきた光は位相差をもち、出射路3で干渉し合い、
位相差に対応した光強度で出射する。. When linearly polarized light with a stable wavelength is input from the input path 2 by the semiconductor laser LD, it branches into two waveguides 4.5, propagates, is combined in the output path 3, and is emitted. At this time, since the lengths of the waveguides 4 and 5 are different, the light propagating through both waveguides 4.5 has a phase difference and interferes with each other in the output path 3.
It emits light with an intensity corresponding to the phase difference.
導波路2・・・5は、温度変化によって屈折率が変化す
るため、ある温度TIにおける屈折率を11、温度T2
における屈折率を02とすると、導波路4と5を伝播す
る光は、温度T1においてはnHj!1−j!2)の位
相差を有し、温度T2においてはn2(1l−12)の
位相差を有する。したがって温度変化によって各導波路
の屈折率が変化することで、出射路3からの出射光の光
強度が変化する。これをフォトダイオードD等で検出す
ることで、温度を測定することができる。Since the refractive index of the waveguides 2...5 changes with temperature changes, the refractive index at a certain temperature TI is 11, and the refractive index at a temperature T2 is
Assuming that the refractive index at is 02, the light propagating through waveguides 4 and 5 has nHj! at temperature T1. 1-j! 2), and has a phase difference of n2 (1l-12) at temperature T2. Therefore, as the refractive index of each waveguide changes due to a temperature change, the light intensity of the output light from the output path 3 changes. By detecting this with a photodiode D or the like, the temperature can be measured.
このように温度によって屈折率が変化することを利用し
ているが、この効果は小さいので、高感度にするには素
子長を長くしなければならず、大型な装置となる。本発
明の技術的課題は、従来の光導波形温度センサにおける
このような問題を解消し、小型でかつ高感度の先導波形
温度センサを実現することにより、各種装置のインテリ
ジェント化に即応可能とすることにある。Although this change in refractive index with temperature is utilized, this effect is small, so to achieve high sensitivity the element length must be increased, resulting in a large device. The technical problem of the present invention is to eliminate such problems with conventional optical waveguide temperature sensors and realize a small and highly sensitive leading waveform temperature sensor, thereby making it possible to immediately respond to the intelligentization of various devices. It is in.
第1図は本発明による光導波形温度センサの基本原理を
説明する断面図である。6は焦電効果と電気光学効果を
もつ基板であり、表面に電荷が現れ、かつ温度変化によ
って分極効果が変化する。FIG. 1 is a sectional view illustrating the basic principle of an optical waveguide temperature sensor according to the present invention. 6 is a substrate having a pyroelectric effect and an electro-optic effect, a charge appears on the surface, and the polarization effect changes with temperature change.
この基板6に、電界密度の高い領域7と低い領域8が形
成されている。そして電界密度の高い領域7に光導波路
9が設けられ、電界、密度の低い領域8に、もう1つの
光導波路10が形成されている。On this substrate 6, a region 7 with a high electric field density and a region 8 with a low electric field density are formed. An optical waveguide 9 is provided in a region 7 where the electric field density is high, and another optical waveguide 10 is formed in a region 8 where the electric field and density are low.
そして両光導波路9.10は並列に配置され、それぞれ
の一端は1つの入射路に接続され、他端は1つの出射路
に接続される。Both optical waveguides 9 and 10 are arranged in parallel, and one end of each is connected to one input path, and the other end is connected to one output path.
基板6の焦電効果によって発生した分極電荷による電界
密度の高い領域に先導波路9が有るため、温度変化によ
って電界密度が変化すると、今度は電気光学効果によっ
て先導波路9中の屈折率が変化する。もう1つの先導波
路10は、電界密度の低い領域8に設けられているので
、温度変化による電界密度の変化は少なく、したがって
屈折率の変化も小さい。そのため、2つの先導波路9、
lOに入射した光が、出射路から出射する際に、片方の
光導波路9の屈折率が温度変化によって変化することで
、両光導波路9.10からの出射光の位相差が変化する
。その結果、出射光を光電素子で検出することにより、
温度を測定できる。また基板6の結晶の焦電効果および
電気光学効果が大きいため、小型な素子で高感度の光導
波形温度センサを実現できる。Since the leading waveguide 9 is located in a region with high electric field density due to polarized charges generated by the pyroelectric effect of the substrate 6, when the electric field density changes due to temperature change, the refractive index in the leading waveguide 9 changes due to the electro-optic effect. . Since the other leading waveguide 10 is provided in the region 8 where electric field density is low, there is little change in electric field density due to temperature change, and therefore, change in refractive index is also small. Therefore, two leading waveways 9,
When the light that has entered the IO exits from the output path, the refractive index of one of the optical waveguides 9 changes due to temperature change, so that the phase difference between the output lights from both optical waveguides 9 and 10 changes. As a result, by detecting the emitted light with a photoelectric element,
Can measure temperature. Further, since the crystal of the substrate 6 has a large pyroelectric effect and electro-optic effect, a highly sensitive optical waveguide temperature sensor can be realized with a small element.
次に本発明による先導波形温度センサが実際上どのよう
に具体化されるかを実施例で説明する。Next, how the leading waveform temperature sensor according to the present invention is practically implemented will be explained by way of an example.
第2図は本発明による光導波形温度センサの断面図、第
3図は同温度センサの斜視図である。焦電効果および電
気光学効果を有する基板6としては、Z−cut Li
NbO3が適しているが、LiTa0z (リチウムタ
ンタレート)なども有効である。この基板6上に、Ti
を1000℃程度の温度で熱拡散することで、2本の光
導波路9.10が平行に形成されている。FIG. 2 is a sectional view of an optical waveguide temperature sensor according to the present invention, and FIG. 3 is a perspective view of the same temperature sensor. As the substrate 6 having a pyroelectric effect and an electro-optic effect, Z-cut Li
NbO3 is suitable, but LiTa0z (lithium tantalate) and the like are also effective. On this substrate 6, Ti
By thermally diffusing the light at a temperature of about 1000° C., two optical waveguides 9 and 10 are formed in parallel.
基板6上において、両光導波路9.10の一端は、1本
の入射路2に接続され、他端は出射路3に接続されるこ
とで、Y分岐を用いたマツハツエンダ−干渉計を構成し
ている。そして光導波路9.10側の面に、絶縁層を形
成するために、Singを蒸着した絶縁膜11aが形成
されている。この絶縁膜11aおよび基板6の外周を囲
むように、金属膜12を蒸着などによって形成するが、
先導波路9と対向する領域だけをマスクして蒸着するこ
とで、中断部13が形成されている。On the substrate 6, one end of both optical waveguides 9 and 10 is connected to one input path 2, and the other end is connected to the output path 3, thereby configuring a Matsuhatsu Ender interferometer using a Y branch. ing. In order to form an insulating layer, an insulating film 11a deposited with Sing is formed on the surface on the optical waveguide 9.10 side. A metal film 12 is formed by vapor deposition or the like so as to surround the insulating film 11a and the outer periphery of the substrate 6.
The interrupted portion 13 is formed by masking and depositing only the area facing the leading waveguide 9.
このように、基板6および絶縁膜11aの外周を金属膜
12で囲むことで、第1図に示すように、基板6の表面
に生じる電荷により、金属膜12に逆掻性の電荷が誘起
される。そのため、電界は基板6の面と金属膜12との
間の絶縁膜11a中に生じる。In this way, by surrounding the outer periphery of the substrate 6 and the insulating film 11a with the metal film 12, as shown in FIG. Ru. Therefore, an electric field is generated in the insulating film 11a between the surface of the substrate 6 and the metal film 12.
ところが金属膜の中断部13では、基板6表面の電荷の
つくる電界は、第1図に示すように基板6中の光導波路
9中を通り、電界密度の高い領域7が形成される。However, in the interrupted portion 13 of the metal film, the electric field created by the charges on the surface of the substrate 6 passes through the optical waveguide 9 in the substrate 6, as shown in FIG. 1, and a region 7 with high electric field density is formed.
このように、Y分岐後の2本の導波路のうち1本だけが
、温度変化により電界密度が変化し、電気光学効果を介
して屈折率が変わるようにしている。そのため、両光導
波路9.10から出射し合波した光の光強度を検知する
ことで、温度測定が可能となる。In this way, in only one of the two waveguides after the Y branch, the electric field density changes due to temperature change, and the refractive index changes through the electro-optic effect. Therefore, temperature can be measured by detecting the light intensity of the combined light emitted from both optical waveguides 9 and 10.
以上のように本発明によれば、2本のY分岐光導波路9
.10のうち、片方の先導波路9のみ、焦電効果および
電気光学効果を有する基板の電界密度の高い領域に設け
た構成になっているので、焦電効果および電気光学効果
が大きい。そのため、基板6を大型化しなくても充分悪
魔を得ることができ、信頼性の高い光導波形温度センサ
を実現可能となる。As described above, according to the present invention, the two Y-branch optical waveguides 9
.. Among the waveguides 10, only one of the leading waveguides 9 is provided in a region of a substrate having a pyroelectric effect and an electro-optic effect with a high electric field density, so that the pyroelectric effect and the electro-optic effect are large. Therefore, sufficient temperature can be obtained without increasing the size of the substrate 6, and a highly reliable optical waveguide temperature sensor can be realized.
第1図は本発明による先導波形温度センサの基本原理を
説明する断面図、第2図は本発明による光導波形温度セ
ンサの実施例を示す断面図、第3図は同実施例センサの
斜視図、第4図は従来の光導波形温度センサの平面図で
ある。
図において、6は基板、7は電界密度の高い領域、8は
電界密度の低い領域、9.10は光導波路、11は絶縁
層、12は金属膜、13は中断部をそれぞれ示す。
特許出願人 冨士通株式会社
代理人 弁理士 青 柳 稔
第1図
第2図
第3図
第4図FIG. 1 is a cross-sectional view illustrating the basic principle of the leading waveform temperature sensor according to the present invention, FIG. 2 is a cross-sectional view showing an embodiment of the optical waveform temperature sensor according to the present invention, and FIG. 3 is a perspective view of the same embodiment sensor. , FIG. 4 is a plan view of a conventional optical waveguide temperature sensor. In the figure, 6 is a substrate, 7 is a region with high electric field density, 8 is a region with low electric field density, 9 and 10 are optical waveguides, 11 is an insulating layer, 12 is a metal film, and 13 is an interrupted portion. Patent applicant Fujitsu Co., Ltd. Agent Patent attorney Minoru Aoyagi Figure 1 Figure 2 Figure 3 Figure 4
Claims (2)
該基板(6)から発生する電界の密度の高い領域(7)
と、電界の弱い領域(8)を形成すること、 前記基板(6)に2つの光導波路(9)(10)を設け
、その片方の光導波路(9)は、前記の電界密度の高い
領域(7)に配置し、他方の光導波路(10)は、前記
の電界密度の低い領域(10)に配置すること、 両光導波路(9)(10)の一端同士を1つの入射路に
接続し、他端同士は1つの出射路に接続することを特徴
とする光導波形温度センサ。(1), a substrate (6) with pyroelectric effect and electro-optic effect,
Region (7) with high electric field density generated from the substrate (6)
and forming a region (8) with a weak electric field; two optical waveguides (9) and (10) are provided on the substrate (6), and one of the optical waveguides (9) is connected to the region with a high electric field density. (7), and the other optical waveguide (10) is placed in the region (10) with low electric field density, and one end of both optical waveguides (9) and (10) are connected to one input path. An optical waveguide temperature sensor characterized in that the other ends thereof are connected to one emission path.
6)の一面に絶縁層(11)を設け、該基板(6)およ
び絶縁層(11)の外周に金属膜(12)を設け、該絶
縁層(11)上で金属膜の中断部(13)を設けること
で、該中断部(13)に対応する位置(7)の電界密度
が高くなるようにしたことを特徴とする特許請求の範囲
第(1)項記載の光導波形温度センサ。(2) A substrate having the above-mentioned pyroelectric effect and electro-optic effect (
An insulating layer (11) is provided on one surface of the substrate (6), a metal film (12) is provided on the outer periphery of the substrate (6) and the insulating layer (11), and an interrupted portion (13) of the metal film is provided on the insulating layer (11). ) The optical waveguide temperature sensor according to claim 1, wherein the electric field density at the position (7) corresponding to the interruption part (13) is increased.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61060044A JPH0785036B2 (en) | 1986-03-18 | 1986-03-18 | Optical waveform temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61060044A JPH0785036B2 (en) | 1986-03-18 | 1986-03-18 | Optical waveform temperature sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62215836A true JPS62215836A (en) | 1987-09-22 |
| JPH0785036B2 JPH0785036B2 (en) | 1995-09-13 |
Family
ID=13130681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61060044A Expired - Fee Related JPH0785036B2 (en) | 1986-03-18 | 1986-03-18 | Optical waveform temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0785036B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007170918A (en) * | 2005-12-20 | 2007-07-05 | Sumitomo Electric Ind Ltd | Optical waveguide device, temperature measuring device, and temperature measuring method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5655825A (en) * | 1979-10-12 | 1981-05-16 | Matsushita Electric Ind Co Ltd | Optical type temperature sensor |
| JPS56112608A (en) * | 1980-02-12 | 1981-09-05 | Toshiba Corp | Optical sensing device |
| JPS60170723A (en) * | 1984-02-15 | 1985-09-04 | Yokogawa Hokushin Electric Corp | Optical transducer |
-
1986
- 1986-03-18 JP JP61060044A patent/JPH0785036B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5655825A (en) * | 1979-10-12 | 1981-05-16 | Matsushita Electric Ind Co Ltd | Optical type temperature sensor |
| JPS56112608A (en) * | 1980-02-12 | 1981-09-05 | Toshiba Corp | Optical sensing device |
| JPS60170723A (en) * | 1984-02-15 | 1985-09-04 | Yokogawa Hokushin Electric Corp | Optical transducer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007170918A (en) * | 2005-12-20 | 2007-07-05 | Sumitomo Electric Ind Ltd | Optical waveguide device, temperature measuring device, and temperature measuring method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0785036B2 (en) | 1995-09-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |