JPS6222471A - semiconductor integrated circuit - Google Patents
semiconductor integrated circuitInfo
- Publication number
- JPS6222471A JPS6222471A JP60162217A JP16221785A JPS6222471A JP S6222471 A JPS6222471 A JP S6222471A JP 60162217 A JP60162217 A JP 60162217A JP 16221785 A JP16221785 A JP 16221785A JP S6222471 A JPS6222471 A JP S6222471A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- resistance value
- length
- integrated circuit
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/43—Resistors having PN junctions
Landscapes
- Non-Adjustable Resistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体集積回路に関し、特に抵抗素子を有す
る半導体集積回路に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit, and particularly to a semiconductor integrated circuit having a resistive element.
抵抗素子（以下単に抵抗という）を有する半導体集積回
路においては、定められ雷電気的特性を出す為に、その
抵抗の層抵抗値は、所定の範囲内にある必要がある。し
かし従来は、一定の設計値（設計時点での目標値）ｔ−
持つ抵抗パターンを設けておき、製造工程中にその抵抗
値を計り、設計値と比較して層抵抗か妥当な範囲にある
かを調べていた。In a semiconductor integrated circuit having a resistive element (hereinafter simply referred to as a resistor), the layer resistance value of the resistor needs to be within a predetermined range in order to exhibit a defined lightning-electric characteristic. However, conventionally, a constant design value (target value at the time of design) t-
A resistance pattern was prepared, and the resistance value was measured during the manufacturing process and compared with the design value to determine whether the layer resistance was within a reasonable range.
半導体基板上に形成される抵抗の抵抗値は、層抵抗成分
と電極部分の成分いわゆる「コンタクト抵抗」より収る
が、上述し九従来の方法ではこの２つの成分を分離する
ことができない。従って、目標値からずれている場合、
層抵抗とコンタクト抵抗のどちらがずれているか分から
ないという欠点があった。The resistance value of a resistor formed on a semiconductor substrate is within the range of a layer resistance component and an electrode portion component, so-called "contact resistance," but the above-mentioned nine conventional methods cannot separate these two components. Therefore, if it deviates from the target value,
There was a drawback that it was not possible to tell whether the layer resistance or the contact resistance was out of alignment.
本発明の目的は、上記欠点を除去し、層抵抗及びコンタ
クト抵抗を簡単に求めることのでき信頼性の向上しｔ半
導体集積回路を提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor integrated circuit which eliminates the above-mentioned drawbacks, allows easy determination of layer resistance and contact resistance, and improves reliability.
本発明の半導体集積回路は、同一の幅を有しかつ長さの
差が前記幅の整数倍である少くとも２本の抵抗値チェッ
ク用の抵抗素子を有するものである。また抵抗素子の長
さの差が一方の抵抗素子の長さの整数倍である抵抗値チ
ェック用の抵抗素子を有するものである。The semiconductor integrated circuit of the present invention has at least two resistance elements for checking resistance values, each having the same width and having a length difference that is an integral multiple of the width. Further, the present invention has a resistance element for checking resistance value, in which the difference in length between the resistance elements is an integral multiple of the length of one resistance element.
次にその作用について説明する。 Next, its effect will be explained.
本発明による半導体集積回路の有する少くとも２本の抵
抗値チェック用の抵抗ＲＡ、ＲＢは、幅が等しく、長さ
の差が幅の整数（ｎ１倍となっている。At least two resistance value checking resistors RA and RB included in the semiconductor integrated circuit according to the present invention have the same width, and the difference in length is an integer (n1 times) of the width.
この２本の抵抗Ｒ，Ａ、ＲＢの長さを各々、１）１．ｆ
ｔ２（但し１）１〉Ａｘとする）幅ＱＷｌとすれば各々
の抵抗値Ｒ１，凡２は次の式で表わされる。The lengths of these two resistors R, A, and RB are 1)1. f
t2 (where 1)1>Ax) width QWl, each resistance value R1, approximately 2, is expressed by the following equation.
ここでＲ１はこの抵抗の層抵抗値、ＲＣＩはコノタクト
抵抗値である。Here, R1 is the layer resistance value of this resistor, and RCI is the contact resistance value.
抵抗値の差ΔＲは
ここでｊｔｌ−ｊ１２＝ｎＷｘ （ｎは整数）であるか
う、となる。よって抵抗値の差ΔＲは層抵抗値ρｌのｎ
倍を示すので、簡単に層抵抗ρ１ｆｔ求めることができ
る。Here, the difference ΔR in resistance value is jtl-j12=nWx (n is an integer). Therefore, the difference in resistance value ΔR is n of the layer resistance value ρl
Since it shows the multiplication factor, the layer resistance ρ1ft can be easily obtained.
例えばｆｌ＝ｌとじ九場合は、ΔＲの値はそのまま層抵
抗１ｋｆｉわすことになる。For example, if fl=l, the value of ΔR will be equal to the layer resistance 1 kfi.
次ＶＣ２本Ｏ抵抗ｋＬ Ｃ、ｋＬＤ（Ｄ長す１ ｓ 、
１４ （但しＪ２ａ ） Ｉｔ ４とする）の差が
、幅ｗ２の整数（ｍｌ）倍であり、且つ一方の長さＪ２
４（Ｄ整数（ｍｚ）企
倍のときは、各々の抵抗値Ｒｓ、Ｒ４は次の式で表わさ
れる。Next VC2 O resistance kL C, kLD (D length 1 s,
14 (where J2a) It is assumed to be 4) is an integer (ml) times the width w2, and one length J2
4 (D integer (mz)), the respective resistance values Rs and R4 are expressed by the following equations.
Ｒｓ＝ｐｚ ・−十ＲＣ２（４）
Ｉｌａ −１４＝ｍ ＩＷ２
（６）ｆｔ３−ｆｌａ ＝ｍ２Ｊ１４
（７）ここでＲ２は層抵
抗値、Ｒａｇはコンタクト抵抗値である。Rs=pz ・−1RC2(4) Ila −14=m IW2
(6) ft3-fla = m2J14
(7) Here, R2 is a layer resistance value, and Rag is a contact resistance value.
（４）、（５）、（６）式より層抵抗値ρ２を求めると
、前例と同様に
ρｇ＝（Ｒｓ−Ｒ＜）１ｍ１ （８）
となる。When calculating the layer resistance value ρ2 from equations (4), (5), and (6), as in the previous example, ρg=(Rs-R<)1m1 (8)
becomes.
コンタクト抵抗値ＲＣ２は（４１、（５１、（７１式よ
り求める事ができ、（４）式に（７）式を入れて１ｓｔ
−消去した後、（５）式Ｑ（ｍ＊＋１）倍を差引くと（
ｍｚ ＋ １ ） Ｒ４−Ｒａ ＝ｍｚ ＲＣ２又はＲ
ｃｚ＝（（ｍｚ＋１）Ｒ４−Ｒｓ）７ｍ２ （９）とな
る、よって層抵抗値ρｌとコンタクト抵抗値ＲＣ２を簡
単に求めることができる。The contact resistance value RC2 can be obtained from equations (41, (51, and 71), and by inserting equation (7) into equation (4), the 1st
- After eliminating, subtracting the formula (5) Q(m*+1) times (
mz + 1) R4-Ra = mz RC2 or R
cz=((mz+1)R4-Rs)7m2 (9) Therefore, the layer resistance value ρl and the contact resistance value RC2 can be easily obtained.
例えばｍ１＝ｔ 、ｍｚ＝ｌ （ｊ！５＝２ｆ１４）と
すれば層抵抗値ρ２は２本の抵抗の抵抗値差そのままの
値となり、またコノタクト抵抗値ＲＣ２は、短い方の抵
抗の抵抗値の２倍から長い方の抵抗の抵抗値を引けば求
めることができる。For example, if m1=t and mz=l (j!5=2f14), the layer resistance value ρ2 will be the same value as the resistance difference between the two resistors, and the contact resistance value RC2 will be the resistance value of the shorter resistor. It can be found by subtracting the resistance value of the longer resistor from twice the value.
次に本発明の実施例について図面を参照して説明する。 Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一笑施例の平面図、第２図は第１図に
示す抵抗のＡ−Ａ’断面図である。FIG. 1 is a plan view of a simple embodiment of the present invention, and FIG. 2 is a sectional view taken along the line AA' of the resistor shown in FIG.
第１図及び第２図において、Ｎ型半導体基板ｌ上に形成
されたＰ型抵抗層からなる抵抗値チェック用の抵抗ＫＡ
、ＲＢの幅Ｗｌは共に１０μｍであり、抵抗ＫＡの長さ
１）は３０μｍ、几Ｂの長さ１２は２０μｍである。ま
た各抵抗に接続された測定用電極Ｐｕｔ 、 Ｐｚｓ
、 Ｐａｔ 、 Ｐ４１はそれぞれ３０４ｍ角の大きさ
であり、ｐＨ，Ｐ２１及びＰ ３１゜Ｐ４１の間隔ＬＸ
は８０μｍ、そして抵抗ＲＡ、ＲＢの間隔Ｌ２は５０μ
ｍに形成されている。In FIGS. 1 and 2, a resistance value checking resistor KA consisting of a P-type resistance layer formed on an N-type semiconductor substrate l is shown.
, RB are both 10 μm in width, length 1) of resistor KA is 30 μm, and length 12 of resistor B is 20 μm. In addition, measurement electrodes Put and Pzs connected to each resistance
, Pat, and P41 each have a size of 304 m square, and the distance between pH, P21, and P31°P41 is LX.
is 80μm, and the distance L2 between resistors RA and RB is 50μm.
It is formed in m.
ここで、抵抗ＲＡ、ＲＢの長さの差（１）−１）２）は
１０μｍであり幅Ｗ１ と等しくしである（すなわちｎ
＝１）。このとき、抵抗比Ａ、ＲＢの抵抗値Ｒ１，Ｒｚ
が各々３．１にΩ、 ２．１ ｋΩであれば層抵抗値は
ｌｋΩ／口となる事がすぐ分る。各抵抗の測定用電極間
隔Ｌ１は等しくしであるので抵抗測定用の針間隔ｔ−調
整することなくＬ２だけ平行移動するだけで、抵抗値几
ｘ、ｋＬ２’を測定できる。Here, the difference (1)-1)2) between the lengths of the resistors RA and RB is 10 μm, which is equal to the width W1 (that is, n
=1). At this time, the resistance ratio A, the resistance value R1, Rz of RB
It is easy to see that if they are respectively 3.1 Ω and 2.1 kΩ, the layer resistance value is lkΩ/mouth. Since the measuring electrode spacing L1 of each resistance is equal, the resistance value x, kL2' can be measured by simply moving in parallel by L2 without adjusting the resistance measuring needle spacing t.
ここで云う抵抗ｌの長さとは第２図に示しｔＰ型低抵抗
層３測定用電極ｐＨ，Ｐ２１とを電気的に導通させる為
に絶縁膜２に設けられたコンタクト孔４の内側の間隔１
）を指している。The length of the resistance l referred to here is shown in FIG.
).
第３図は本発明の他の実施例の平面図、第４図は第３図
における抵抗０Ｂ−Ｂ’断面図である。FIG. 3 is a plan view of another embodiment of the present invention, and FIG. 4 is a sectional view of the resistor 0B-B' in FIG.
第３図において測定用電極Ｐｌｚ、Ｐｚｚ、Ｐｓｚは３
０μｍ角でめり、その間隔ＬＸは５０μｍに形成されて
いる。また、抵抗ＲＣ、ＲＤの幅Ｗ２は１０μｍ、ＲＣ
の長さ１３は２０μｍ、ＲＤの長さ１４は１０μｍであ
る。そして、２本の抵抗ＲＣ，ＲＤの長さの差１ｓ−１
＜は１０４ｍで、幅Ｗ２の１倍であり（すなわちｍ１＝
１）、且つ長さ１４の１倍（すなわちｍｚ＝ｔ）となっ
ている。In Fig. 3, the measurement electrodes Plz, Pzz, and Psz are 3.
It is bent at a 0 μm square, and the interval LX is set to 50 μm. In addition, the width W2 of resistors RC and RD is 10 μm, RC
The length 13 of RD is 20 μm, and the length 14 of RD is 10 μm. Then, the difference in length between the two resistors RC and RD is 1 s-1
< is 104 m, which is 1 times the width W2 (i.e. m1=
1), and is 1 times the length 14 (that is, mz=t).
抵抗ＲＩＣ９ＲＩＤの抵抗値Ｒ１ｅＲ４がＬｌにΩ。The resistance value R1eR4 of resistor RIC9RID is Ω to Ll.
１．１にΩであるとき、コンタクト抵抗は０．１にΩ。When the contact resistance is 1.1Ω, the contact resistance is 0.1Ω.
層抵抗にｌｋΩ／口である事が直ちに求められる。It is immediately required that the layer resistance is lkΩ/mouth.
第４図に示した抵抗Ｒｅは第２図に示した抵抗８人と多
少異なりコンタクト用高濃度のＰ型拡散層３人が追加さ
れている。この場合、抵抗の長さ１３は高濃度のＰ型拡
散膚３人間の間隔となる。The resistor Re shown in FIG. 4 is slightly different from the eight resistors shown in FIG. 2 in that three high-concentration P-type diffusion layers for contact are added. In this case, the length of the resistance 13 is the distance between the three highly concentrated P-type diffusion skins.
このように上記実施例によれば幅が同じで、長さの差が
幅の整数倍である２本の抵抗値チェック用の抵抗の抵抗
値を測定するＦ９ことにより、層抵抗を簡単に求めるこ
とができる。更に、長さの差が、−万の抵抗長の整数倍
である２本の抵抗値チェック用の抵抗の抵抗値を測定す
ることにより。In this way, according to the above embodiment, the layer resistance can be easily determined by measuring the resistance values of two resistance value checking resistors that have the same width and whose length difference is an integral multiple of the width. be able to. Furthermore, by measuring the resistance values of two resistance value checking resistors whose length difference is an integral multiple of the resistance length of -10,000.
コンタクト抵抗も簡単に求めることができる。Contact resistance can also be easily determined.
以上詳細に説明したように、本発明によれば、抵抗値チ
ェック用の抵抗を用いることにより簡単に層抵抗及びコ
ンタクト抵抗が求めることができるので、信頼性の向上
し九半導体装置を得ること 。As described in detail above, according to the present invention, layer resistance and contact resistance can be easily determined by using a resistance value checking resistor, so that a semiconductor device with improved reliability can be obtained.
ができる。I can do it.
第１図は本発明の一実施例の平面図、第２図は第１図に
示す抵抗素子の断面図、第３図は本発明の他の実施例の
平面図、第４図は第３図における抵抗素子の断面図でお
る。
ｌ・・・・・・Ｎ型半導体基板、２・・・・・・絶縁膜
、３・・・・・・Ｐ型抵抗層％ ４・・・・・・コンタ
クト孔、ＲＡ、ＲＢ。
几Ｃ、ＲＤ−・−・−抵抗、Ｐｔｔ 、Ｐ２ｔ 、Ｐａ
ｔ 、Ｐｓｓ。
Ｐ２２．Ｐ３２・・・・・・測定用電極。
￥１田
沼２図FIG. 1 is a plan view of one embodiment of the present invention, FIG. 2 is a sectional view of the resistance element shown in FIG. 1, FIG. 3 is a plan view of another embodiment of the present invention, and FIG. 3 is a cross-sectional view of the resistance element shown in the figure. 1...N-type semiconductor substrate, 2...Insulating film, 3...P-type resistance layer% 4...Contact hole, RA, RB.几C, RD--Resistance, Ptt, P2t, Pa
t, Pss. P22. P32...Measurement electrode. ¥1 Tanuma 2 map
Claims (2)
ある少くとも２本の抵抗値チェック用の抵抗素子を有す
ることを特徴とする半導体集積回路。(1) A semiconductor integrated circuit comprising at least two resistance elements for checking a resistance value, each having the same width and having a difference in length that is an integral multiple of the width.
数倍である特許請求の範囲第（１）項記載の半導体集積
回路。(2) The semiconductor integrated circuit according to claim (1), wherein the difference in length between the resistive elements is an integral multiple of the length of one of the resistive elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60162217A JPS6222471A (en) | 1985-07-22 | 1985-07-22 | semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60162217A JPS6222471A (en) | 1985-07-22 | 1985-07-22 | semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6222471A true JPS6222471A (en) | 1987-01-30 |
Family
ID=15750190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60162217A Pending JPS6222471A (en) | 1985-07-22 | 1985-07-22 | semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6222471A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2229792A (en) * | 1987-10-19 | 1990-10-03 | Secretary Trade Ind Brit | Connecting rods |
| JPH04250647A (en) * | 1991-01-25 | 1992-09-07 | Nec Ic Microcomput Syst Ltd | Semiconductor integrated circuit device |
| JPH056861A (en) * | 1991-06-26 | 1993-01-14 | Nec Yamagata Ltd | Control apparatus of semiconductor manufacture |
-
1985
- 1985-07-22 JP JP60162217A patent/JPS6222471A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2229792A (en) * | 1987-10-19 | 1990-10-03 | Secretary Trade Ind Brit | Connecting rods |
| GB2229792B (en) * | 1987-10-19 | 1991-04-17 | Secretary Trade Ind Brit | Connecting rods |
| JPH04250647A (en) * | 1991-01-25 | 1992-09-07 | Nec Ic Microcomput Syst Ltd | Semiconductor integrated circuit device |
| JPH056861A (en) * | 1991-06-26 | 1993-01-14 | Nec Yamagata Ltd | Control apparatus of semiconductor manufacture |
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