JPS62273744A - Resin sealing of semiconductor - Google Patents
Resin sealing of semiconductorInfo
- Publication number
- JPS62273744A JPS62273744A JP11668386A JP11668386A JPS62273744A JP S62273744 A JPS62273744 A JP S62273744A JP 11668386 A JP11668386 A JP 11668386A JP 11668386 A JP11668386 A JP 11668386A JP S62273744 A JPS62273744 A JP S62273744A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- resin
- epoxy resin
- heat
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
８、 発明の詳細な説明
〔産業上の利用分野〕
この発明は封止樹脂がボイドレスである半導体の樹脂封
止方法に関するものである。[Detailed Description of the Invention] 8. Detailed Description of the Invention [Field of Industrial Application] This invention relates to a resin encapsulation method for semiconductors in which the encapsulation resin is void-free.
半導体チップには、外部環境より保護するためハーメチ
ックシールのような金属封止、セラミック封止および樹
脂封止などが施されている。Semiconductor chips are sealed with metal such as hermetic seals, ceramic seals, resin seals, etc. to protect them from the external environment.
特に、近年低コスト化と作業性の曲からも樹脂封止が主
流になっている。樹脂封止は、トランスファーモールド
、流動浸漬塗装、ポツティング、ディッピングおよびコ
ーティング等により行なわれ、特にトランスファーモー
ルド７５Ｅ 主ｆｉになっている。又、半導体の保護方
法でも半導体チップのみを保護することもしばしばあり
、エポキシ樹脂およびシリコン樹脂等の液状樹脂や熱可
溶性エポキシ樹脂のペレット等が用いられている。In particular, resin encapsulation has become mainstream in recent years due to lower costs and easier workability. Resin sealing is performed by transfer molding, fluidized dip coating, potting, dipping, coating, etc., and in particular, transfer mold 75E is the main fi. Furthermore, in semiconductor protection methods, it is often the case that only the semiconductor chip is protected, and liquid resins such as epoxy resins and silicone resins, pellets of heat-soluble epoxy resins, and the like are used.
上記のような従来の熱可溶性エポキシ樹脂のベレツ）１
−用一た半導体の樹脂封止においては、樹脂の溶融時に
しばしば樹脂中や半導体チップ界面にボイドが発生する
〇
このボイドは、外観上良くないだけでなく、特に耐湿性
が要求される半導体におｉては、ボイド内に水分が浸入
するため機能不良が発生する。Conventional heat-soluble epoxy resin as above)1
- In the resin encapsulation of semiconductors, voids often occur in the resin or at the semiconductor chip interface when the resin melts. These voids not only look bad, but are particularly important for semiconductors that require moisture resistance. In other words, moisture intrudes into the voids, resulting in malfunction.
この発明は、かかる問題点を解決するためになされたも
ので、封止樹脂中にボイドの極めて少ない半導体の樹脂
−封止法を得ることを目的とする。The present invention has been made to solve these problems, and aims to provide a resin-sealing method for semiconductors with extremely few voids in the sealing resin.
この発明の半導体の封止方法は、半導体チップの被封止
部に、熱可溶性エポキシ樹脂材を上記被封止部と点接鋤
となるように配置し、上記熱可溶性エポキシ樹脂材を、
上記半導体チップとの接１１１ｓから溶融し硬化させて
上記被封止部を封止するものである。The method for encapsulating a semiconductor according to the present invention includes arranging a heat-soluble epoxy resin material on a portion to be sealed of a semiconductor chip so as to form a point contact with the portion to be sealed, and
It melts and hardens from the contact 111s with the semiconductor chip to seal the sealed portion.
〔作用〕
この発明において熱可溶性エポキシ樹脂材が半導体チッ
プと点接勉であり、その接勉都から溶融するため、溶融
時、空気のだき込みが極めて少なく、封止樹脂中のボイ
ドが極めて少なくなる。[Function] In this invention, the thermofusible epoxy resin material is a point contact with the semiconductor chip, and since it melts from the contact point, there is extremely little air intrusion during melting, and very few voids in the sealing resin. Become.
この発明に係わる熱可溶性エポキシ樹脂材は、必要に応
じて充填剤、着色剤およびその他添加剤が含まれる。The thermosoluble epoxy resin material according to the present invention contains fillers, colorants, and other additives as necessary.
又、上記熱可溶性エポキシ樹脂材の形状は、少なくとも
一面が球面および球になっているペレット形状であるの
が望ましく、特に断面がだ円状のものが良い。熱可溶性
エポキシ樹脂材の大きさや形状は、半導体チップの形状
に合わすと均一に半導体チップを封止することができ、
又厚さは半導体チップの要求性能や流動性により調節で
きる。Further, the shape of the heat-soluble epoxy resin material is preferably a pellet shape having at least one spherical surface, and particularly preferably an elliptical cross section. The size and shape of the thermosoluble epoxy resin material can be matched to the shape of the semiconductor chip to uniformly seal the semiconductor chip.
Further, the thickness can be adjusted depending on the required performance and fluidity of the semiconductor chip.
さらに、熱可溶性エポキシ樹脂材は、Ｂステージ状のエ
ボキシパクダーの成型により得られ、その時ボイドレス
エポキシペレットを用いることはより好ましい結果を与
える０又熱り開時流動することが必要てあり、その流動
性は例えばエポキシ粉体塗料のような自然流動が必要で
ある◎熱可溶させる場合の加熱は熱板による半導体チッ
プの加熱が良好で、６０〜ｇｏｏ℃の範囲が望ましい０
６０℃よ）低いと溶融に時間がかかり過ぎ、２００℃よ
シ高いと発泡の恐れがある。Furthermore, the thermosoluble epoxy resin material is obtained by molding B-staged epoxy powder, and the use of voidless epoxy pellets gives more favorable results. Its fluidity requires natural flow like that of epoxy powder coatings. ◎When heat-melting it, it is best to heat the semiconductor chip with a hot plate, preferably in the range of 60 to goo ℃.
If the temperature is too low (60℃), it will take too long to melt, and if it is higher than 200℃, there is a risk of foaming.
以下、実施例によシこの発明を具体的に説明する。Hereinafter, the present invention will be specifically explained with reference to Examples.
実施例
エポキシ樹脂（商品名工ピコ−） １００４シエル社製
）１００重量部に、２フエニルイミダゾール（四国化成
製）１車量部、溶融石英（藺品名ＲＰ−８長潮産業製）
１５０重量部を〆融混練し、粉末化した。この粉末を８
−角の球面付錠剤（ペレット）製作用金型に入れ、真空
加圧プレスした。このペレットを、アルミナ基板に実装
された１０ｇｍ角半導体チップの上に配置する。Example: 100 parts by weight of epoxy resin (product name: Pico 1004 manufactured by Ciel Co., Ltd.), 1 part by weight of 2-phenylimidazole (manufactured by Shikoku Kasei), and fused quartz (product name: RP-8 manufactured by Nagashio Sangyo).
150 parts by weight were melt-kneaded and powdered. 8 of this powder
- It was placed in a mold for producing tablets (pellets) with spherical corners and vacuum-pressed. This pellet is placed on a 10 gm square semiconductor chip mounted on an alumina substrate.
アルミナ基板’ｆｆ１６０℃の熱板の上に乗せ、エポキ
シペレットを溶融させ、８０分間硬化させることによシ
、半導体チップ上面には厚さ約０．５ ｍｔｘのエポキ
シ樹ｎ旨の保護膜か形成される。この半導体を切断し、
ボイドの確ｍを行ったが、全くボイドは見られなかった
。By placing the alumina substrate on a hot plate at 160°C and melting the epoxy pellet and curing it for 80 minutes, a protective film of epoxy resin with a thickness of about 0.5 mtx is formed on the top surface of the semiconductor chip. be done. Cut this semiconductor,
I checked for voids, but no voids were found.
この発明の実施例においては、エポキシペレットを用い
ているため、自動化が容易で作業性にも優れている。In the embodiment of this invention, since epoxy pellets are used, automation is easy and workability is excellent.
なお、上記実施例において、熱可溶性樹脂材の溶融は常
圧で行ったが、減圧下で行うことは、よ〕効果的である
０
〔発明の効果〕
この発明は以上説明したとおり、半導体チップの被封止
部に、熱可溶性エポキシ樹脂材を上記被封止部と点接触
となるように配置し、上記熱可溶性エポキシ樹脂材を、
上記半導体チップとの接触部から溶融し硬化させて上記
被封止部を封止することによシ、封止州脂中にボイドの
極めて少ない半導体の樹脂封止法を得ることができる。In the above examples, the thermofusible resin material was melted at normal pressure, but it is more effective to melt the thermofusible resin material under reduced pressure. A thermofusible epoxy resin material is placed in the sealed portion so as to be in point contact with the sealed portion, and the thermofusible epoxy resin material is
By melting and hardening the resin from the contact portion with the semiconductor chip to seal the portion to be sealed, it is possible to obtain a semiconductor resin encapsulation method with extremely few voids in the encapsulation resin.
Claims (4)
脂材を上記被封止部と点接触となるように配置し、上記
熱可溶性エポキシ樹脂材を、上記半導体チップとの接触
部から溶融し硬化させて上記被封止部を封止する半導体
の樹脂封止方法。(1) A heat-soluble epoxy resin material is placed in a point contact with the sealed part of the semiconductor chip, and the heat-soluble epoxy resin material is melted from the contact part with the semiconductor chip. A resin encapsulation method for a semiconductor, which comprises curing the resin and sealing the portion to be encapsulated.
である特許請求の範囲第１項記載の半導体の樹脂封止方
法。(2) The method for resin-sealing a semiconductor according to claim 1, wherein the heat-soluble epoxy resin material has a spherical surface.
可溶性エポキシ樹脂を含有する特許請求の範囲第１項又
は第２項記載の半導体の樹脂封止方法。(3) The method for resin-sealing a semiconductor according to claim 1 or 2, wherein the heat-soluble epoxy resin material contains a heat-soluble epoxy resin having a melting point of 40° C. or higher.
材を溶融させる特許請求の範囲第１項ないし第３項の何
れかに記載の半導体の樹脂封止方法。(4) A method for resin-sealing a semiconductor according to any one of claims 1 to 3, wherein the thermofusible resin material is melted by heating the semiconductor chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11668386A JPS62273744A (en) | 1986-05-21 | 1986-05-21 | Resin sealing of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11668386A JPS62273744A (en) | 1986-05-21 | 1986-05-21 | Resin sealing of semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62273744A true JPS62273744A (en) | 1987-11-27 |
Family
ID=14693287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11668386A Pending JPS62273744A (en) | 1986-05-21 | 1986-05-21 | Resin sealing of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62273744A (en) |
-
1986
- 1986-05-21 JP JP11668386A patent/JPS62273744A/en active Pending
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