JPS62291925A - Centrifugal drying device for semiconductor wafer - Google Patents
Centrifugal drying device for semiconductor waferInfo
- Publication number
- JPS62291925A JPS62291925A JP61136495A JP13649586A JPS62291925A JP S62291925 A JPS62291925 A JP S62291925A JP 61136495 A JP61136495 A JP 61136495A JP 13649586 A JP13649586 A JP 13649586A JP S62291925 A JPS62291925 A JP S62291925A
- Authority
- JP
- Japan
- Prior art keywords
- wall
- semiconductor wafer
- ultrapure water
- water
- mist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Solid Materials (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
3、発明の詳細な説明
産業上の利用分野
本発明は、半導体製造プロセスに使用される半導体ウェ
ハー遠心乾燥装置に関する。Detailed Description of the Invention 3. Detailed Description of the Invention Field of Industrial Application The present invention relates to a semiconductor wafer centrifugal drying apparatus used in a semiconductor manufacturing process.
従来の技術
第3図に示すように、従来の半導体ウェハー遠心乾燥装
置では、半導体ウェハーを遠心乾燥した場合、半導体ウ
ェハー4から飛んできた付着水2は、装置内壁1に衝突
してはね返り、ミスト3となって、半導体ウェハー4に
再付着していた。BACKGROUND ART As shown in FIG. 3, in a conventional semiconductor wafer centrifugal drying apparatus, when a semiconductor wafer is centrifugally dried, attached water 2 flying from the semiconductor wafer 4 collides with the apparatus inner wall 1 and bounces off, forming mist. 3 and was reattached to the semiconductor wafer 4.
発明が解決しようとする問題点
半導体ウェハー付着水は、半導体ウェハーを遠心乾燥さ
せる場合、遠心力によって装置内壁に衝突して半導体ウ
ェハー側にはね返りミストとなり、半導体ウェハーにこ
のミストが再付着する。また、装置内の空気と高速で回
転する半導体ウェハーとの摩擦により、半導体ウェハー
上に静電気が発生し、装置内のダストが半導体ウェハー
上に吸い寄せられる。さらに、半導体ウェハーを次々に
遠心乾燥させる場合、装置内はダストによシ累積汚染さ
れていく。したがってこれらのミスト、及びダストは半
導体ウェハーの汚染の原因となる。Problems to be Solved by the Invention When semiconductor wafers are centrifugally dried, water adhering to semiconductor wafers collides with the inner wall of the apparatus due to centrifugal force and bounces back toward the semiconductor wafer, forming mist, which then re-adheres to the semiconductor wafer. Further, static electricity is generated on the semiconductor wafer due to friction between the air inside the device and the semiconductor wafer rotating at high speed, and dust inside the device is attracted onto the semiconductor wafer. Furthermore, when semiconductor wafers are centrifugally dried one after another, the inside of the apparatus becomes cumulatively contaminated with dust. Therefore, these mist and dust cause contamination of semiconductor wafers.
本発明は、従来のものがもつ以上のような問題点を解消
し、ミスト、及びダストの半導体ウェハーへの付着を軽
減させることを目的とする。The present invention aims to solve the above-mentioned problems of the conventional method and to reduce the adhesion of mist and dust to semiconductor wafers.
問題点を解決するための手段
この目的を達成するために、本発明は次の様な構成にな
っている0即ち、本発明に係る半導体ウェハー遠心乾燥
装置は、装置内壁上部に超純水ノズルを設け、内壁上部
から内壁下部に内壁にそって望ましくは内壁全面に、半
導体ウニ・・−遠心乾燥状態を含んで常時、超純水を流
すことができるようにしている。Means for Solving the Problems In order to achieve this object, the present invention has the following configuration. That is, the semiconductor wafer centrifugal drying apparatus according to the present invention has an ultrapure water nozzle at the upper part of the inner wall of the apparatus. is provided so that ultrapure water can be constantly flowed from the upper part of the inner wall to the lower part of the inner wall along the inner wall, preferably over the entire inner wall, including in a centrifugal drying state.
作用
半導体ウェハーを遠心乾燥させる場合、装置内壁上部に
設けた超純水ノズルよυ、内壁上部から内壁下部に内壁
にそって、超純水?内壁全面に流すことによって、遠心
力により半導体ウェハーから飛ば嘔れて来た付着水が装
置内壁に衝突した際、内壁上部から内壁下部に内壁にそ
って流れる超純水の上部から下部方向へのベクトル成分
により、はね返った付着水、即ちミストは装置底部方向
に飛ぶことになる。また、装置内壁にそって超純水を流
すことにより、装置内の湿度は上がることになシ、高速
で回転する半導体ウェハーを装置内の空気との摩擦によ
って半導体ウェハーに生ずる静電気を軽減することがで
き、半導体ウェハーへのダストの付着を軽減することが
できる。さらに、半導体ウェハー遠心乾燥状態を含む常
時、装置内壁にそって超純水を流すことにより、装置内
のダス) fx装置内壁底部の排水口より、超純水と同
時に排水することができ、装置内を常にダストの数がご
くわずかな清潔な状態に保つことができる。When drying semiconductor wafers by centrifugation, the ultrapure water nozzle installed at the top of the inner wall of the equipment pumps ultrapure water along the inner wall from the top of the inner wall to the bottom of the inner wall. By flowing the water over the entire surface of the inner wall, when the adhered water that has been blown away from the semiconductor wafer due to centrifugal force collides with the inner wall of the equipment, the ultrapure water flows along the inner wall from the upper part of the inner wall to the lower part of the inner wall. Due to the vector component, the splashed adhered water, ie, mist, flies toward the bottom of the device. In addition, by flowing ultrapure water along the inner walls of the equipment, the humidity inside the equipment does not increase, and static electricity generated on the semiconductor wafers due to friction between the semiconductor wafers rotating at high speed and the air inside the equipment is reduced. This makes it possible to reduce dust adhesion to semiconductor wafers. In addition, by constantly flowing ultrapure water along the inside wall of the equipment, including when semiconductor wafers are being centrifugally dried, the dust inside the equipment can be drained at the same time as the ultrapure water from the drainage port at the bottom of the inside wall of the equipment. The interior can always be kept clean with very little dust.
実施例
本発明の実施例を第1図、及び第2図を参照しながら説
明する。Embodiment An embodiment of the present invention will be described with reference to FIGS. 1 and 2.
本体内のキャリア30に設置された半導体ウェハー4を
遠心乾燥させる場合、装置本体の内壁5の上部に設けた
超純水ノズル1の流出口2より超純水7を内壁上部よシ
内壁下部に内壁5にそって内壁全面に流すことによって
、回転動力機構(図示せず)によるキャリア30の回転
にもとづく遠心力により、半導体ウェハー4から内壁6
に向って飛ばされてきた付着水13が、内壁6に衝突し
た際、内壁上部から内壁下部に内壁6にそって流れる超
純水7の上部から下部方向へのベクトル成分11と、遠
心力によシ牛導体ウェハー4がら内壁6に向って飛ばき
れてきた付着水13が内壁6に衝突し、はね返った付着
水、即ちミストの内壁5から半導体ウェハー4側へのベ
クトル成分10とを、合成したベクトル成分12に従っ
て、ミスト1oは、装置底部6方向に飛んでいき、排水
口3より超純水7と共に排水される。20は本体上部の
蓋で上部に載置される@
また、超純水7を内壁上部から内壁下部に内壁5にそっ
て内壁全面に流すことによυ、装置内の湿度は上がるこ
とになり、装置が高速で回転することによって半導体ウ
ェハー4と装置内の空気との摩擦によって半導体ウェハ
ー4に生ずる半導体ウェハー4にダスト8を吸い寄せる
原因となる静電気を軽減することができる。さらに、半
導体ウェハー4の遠心乾燥状態を含んだ常時、超純水7
を内壁上部から内壁下部に内壁5にそって内壁全面に流
すことによシ、半導体ウェハー4を次々に遠心乾燥する
ことによって累積的に装置内に生ずるダスト8tl−超
純水と共に排水口3より排出することにより半導体ウェ
ハー4の汚染の原因となる装置内のダスト8の数が、ご
くわずかな清潔な状態に保つことができる。When centrifugally drying a semiconductor wafer 4 placed on a carrier 30 in the main body, ultrapure water 7 is sprayed from the upper part of the inner wall to the lower part of the inner wall from the outlet 2 of the ultrapure water nozzle 1 provided at the upper part of the inner wall 5 of the apparatus main body. By flowing the flow along the inner wall 5 over the entire surface of the inner wall, centrifugal force based on the rotation of the carrier 30 by a rotary power mechanism (not shown) causes the semiconductor wafer 4 to be removed from the inner wall 6.
When the adhering water 13 that has been blown toward collides with the inner wall 6, it is caused by a vector component 11 from the top to the bottom of the ultrapure water 7 flowing along the inner wall 6 from the upper part of the inner wall to the lower part of the inner wall, and the centrifugal force. The adhering water 13 that has been blown away from the conductor wafer 4 toward the inner wall 6 collides with the inner wall 6, and the adhering water that has bounced back, that is, the vector component 10 of the mist from the inner wall 5 toward the semiconductor wafer 4 side, is synthesized. According to the vector component 12, the mist 1o flies toward the bottom 6 of the device and is drained from the drain port 3 together with the ultrapure water 7. 20 is a lid on the top of the main body and is placed on the top @ Also, by flowing ultrapure water 7 from the top of the inner wall to the bottom of the inner wall along the inner wall 5 and over the entire inner wall υ, the humidity inside the device increases. By rotating the device at high speed, it is possible to reduce static electricity that is generated on the semiconductor wafer 4 due to friction between the semiconductor wafer 4 and the air inside the device, which causes dust 8 to be attracted to the semiconductor wafer 4. Furthermore, the ultrapure water 7 is used at all times, including the centrifugal drying state of the semiconductor wafer 4.
By flowing the dust from the upper part of the inner wall to the lower part of the inner wall along the inner wall 5 along the entire inner wall, 8 liters of dust cumulatively generated in the apparatus by centrifugally drying the semiconductor wafers 4 one after another is collected from the drain port 3 together with ultrapure water. By discharging the device, the number of dust 8 that causes contamination of the semiconductor wafer 4 inside the device can be kept at a very small amount, and the device can be kept in a clean state.
従って、半導体ウェハー4の汚染の原因となるミスト1
4、及びダスト8の半導体ウェハー4への付着を軽減す
ることができる。Therefore, the mist 1 that causes contamination of the semiconductor wafer 4
4 and the adhesion of dust 8 to the semiconductor wafer 4 can be reduced.
発明の効果
本発明による半導体ウェハー遠心乾燥装置は以上のよう
な構成よシなるものであり、装置の内壁上部に設けた超
純水ノズルよシ超純水を内壁上部から内壁下部に内壁に
そって内壁全面に、半導体ウェハー遠心乾燥状態を含ん
だ常時流すことによって、半導体ウェハーの汚染の原因
となるミスト及びダストの半導体ウェハーへの付着を軽
減することができる。従って本発明の実用的効果は大き
い。Effects of the Invention The semiconductor wafer centrifugal drying apparatus according to the present invention has the above-described configuration, and the ultrapure water nozzle provided at the upper part of the inner wall of the apparatus supplies ultrapure water along the inner wall from the upper part of the inner wall to the lower part of the inner wall. By constantly flowing the semiconductor wafer over the entire surface of the inner wall, including during centrifugal drying of the semiconductor wafer, it is possible to reduce the adhesion of mist and dust, which cause contamination of the semiconductor wafer, to the semiconductor wafer. Therefore, the practical effects of the present invention are great.
第1図は本発明の一実施例を示す半導体ウェハー遠心乾
燥装置の断面図、第2図は本発明の実施例を示す半導体
ウェハー遠心乾燥装置の一部の拡大断面図、第3図は従
来の半導体ウェハー遠心乾検装置の1!牟面図である。
1・・・・・・超純水ノズル、2・・・・・・流出口、
3・・・・・・排水口、4 、=、=半導体ウェハー、
6・・・・・・内壁、6・・・・・・底部、7・・・・
・・超純水、8・・・・・・ダスト、10・・・・・・
ミストの内壁から装置中心部へのベクトル成分、11・
・・・・・超純水の上部から下部方向へのベクトル成分
、12・・・・・・合成ベクトル成分、13・・・・・
・付着水、14・・・・・・ミスト。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名8〜
ダ ス ト
第10
n
:、32図FIG. 1 is a sectional view of a semiconductor wafer centrifugal drying apparatus showing an embodiment of the present invention, FIG. 2 is an enlarged sectional view of a part of the semiconductor wafer centrifugal drying apparatus showing an embodiment of the present invention, and FIG. 3 is a conventional 1 of the semiconductor wafer centrifugal dry inspection equipment! It is a square view. 1... Ultrapure water nozzle, 2... Outlet,
3...Drain port, 4,=,=semiconductor wafer,
6...Inner wall, 6...Bottom, 7...
...Ultra pure water, 8...Dust, 10...
Vector component from the inner wall of the mist to the center of the device, 11.
...Vector component from the top to the bottom of ultrapure water, 12...Synthetic vector component, 13...
・Adhesive water, 14...mist. Name of agent: Patent attorney Toshio Nakao and 1 other person 8~
Dust No. 10 n:, Figure 32
Claims (1)
ある、超純水を内壁にそって内壁面に流すことができる
超純水ノズル、前記本体内部に設置され回転される半導
体ウェハー、ミスト、ダスト及び超純水を排水すること
ができる排水口を備え、前記内壁上部の超純水ノズルか
ら内壁下部に内壁にそって内壁面に、前記半導体ウェハ
ーの乾燥時、超純水を流すように構成した半導体ウェハ
ー遠心乾燥装置。A main body having at least a cylindrical inner wall, an ultrapure water nozzle located on the upper part of the inner wall of the main body that can flow ultrapure water along the inner wall and onto the inner wall surface, a semiconductor wafer installed inside the main body and rotated, and a mist. , a drain port capable of draining dust and ultrapure water is provided, and the ultrapure water is flowed from the ultrapure water nozzle on the upper part of the inner wall to the lower part of the inner wall along the inner wall surface when drying the semiconductor wafer. Semiconductor wafer centrifugal drying equipment configured as follows.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61136495A JPS62291925A (en) | 1986-06-12 | 1986-06-12 | Centrifugal drying device for semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61136495A JPS62291925A (en) | 1986-06-12 | 1986-06-12 | Centrifugal drying device for semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62291925A true JPS62291925A (en) | 1987-12-18 |
Family
ID=15176498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61136495A Pending JPS62291925A (en) | 1986-06-12 | 1986-06-12 | Centrifugal drying device for semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62291925A (en) |
-
1986
- 1986-06-12 JP JP61136495A patent/JPS62291925A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5829156A (en) | Spin dryer apparatus | |
| JP2019169731A (en) | Substrate cleaning device | |
| JP4567178B2 (en) | Spin processing equipment | |
| JPS62291925A (en) | Centrifugal drying device for semiconductor wafer | |
| JPH0388331A (en) | Filter box in spin drier | |
| JPH1092712A (en) | Semiconductor manufacturing equipment | |
| JP4430197B2 (en) | Spin processing equipment | |
| JPH07249559A (en) | Rotation processing device | |
| JPS6253942B2 (en) | ||
| JP2002009036A (en) | Spin processing device | |
| JP3559987B2 (en) | Rotary processing equipment | |
| WO2016076303A1 (en) | Substrate washing device | |
| JPS60234323A (en) | Manufacturing apparatus of semiconductor integrated circuit device | |
| JPS61239625A (en) | Resist coating apparatus | |
| JPS6317254Y2 (en) | ||
| JP4447673B2 (en) | Spin processing equipment | |
| JPH0235728A (en) | Centrifugal drying apparatus for semiconductor wafer | |
| JP2001189298A (en) | Rotary processing device | |
| JPS57160130A (en) | Wafer washing and drying apparatus | |
| JPS63116719A (en) | Oil mist remover | |
| JPH0369110A (en) | Semiconductor manufacturing device | |
| JPH0725256Y2 (en) | Spinner device | |
| JP2759654B2 (en) | Vacuum suction device and processing device | |
| JPH02215505A (en) | Dicing device | |
| JPS6439632U (en) |