JPS6232349A - Humidity sensor - Google Patents
Humidity sensorInfo
- Publication number
- JPS6232349A JPS6232349A JP60171191A JP17119185A JPS6232349A JP S6232349 A JPS6232349 A JP S6232349A JP 60171191 A JP60171191 A JP 60171191A JP 17119185 A JP17119185 A JP 17119185A JP S6232349 A JPS6232349 A JP S6232349A
- Authority
- JP
- Japan
- Prior art keywords
- silane
- sintered body
- compd
- humidity sensor
- oxide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000077 silane Inorganic materials 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- -1 silane compound Chemical class 0.000 claims description 5
- 230000001747 exhibiting effect Effects 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 7
- 238000005259 measurement Methods 0.000 abstract description 5
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 abstract description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 2
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 abstract description 2
- 229910052808 lithium carbonate Inorganic materials 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 abstract 2
- 230000000274 adsorptive effect Effects 0.000 abstract 1
- BYLOHCRAPOSXLY-UHFFFAOYSA-N dichloro(diethyl)silane Chemical compound CC[Si](Cl)(Cl)CC BYLOHCRAPOSXLY-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- VBICKXHEKHSIBG-UHFFFAOYSA-N 1-monostearoylglycerol Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCC(O)CO VBICKXHEKHSIBG-UHFFFAOYSA-N 0.000 description 1
- DCXXMTOCNZCJGO-UHFFFAOYSA-N Glycerol trioctadecanoate Natural products CCCCCCCCCCCCCCCCCC(=O)OCC(OC(=O)CCCCCCCCCCCCCCCCC)COC(=O)CCCCCCCCCCCCCCCCC DCXXMTOCNZCJGO-UHFFFAOYSA-N 0.000 description 1
- 229910021553 Vanadium(V) chloride Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- MAYIDWCWWMOISO-UHFFFAOYSA-N dichloro-bis(ethenyl)silane Chemical compound C=C[Si](Cl)(Cl)C=C MAYIDWCWWMOISO-UHFFFAOYSA-N 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- RPESBQCJGHJMTK-UHFFFAOYSA-I pentachlorovanadium Chemical compound [Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[V+5] RPESBQCJGHJMTK-UHFFFAOYSA-I 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分ｅ）
本発明に湿度計測や自動制御装置等に用いられる湿度セ
ンサに関するものでらる。DETAILED DESCRIPTION OF THE INVENTION (Industrial Applications e) The present invention relates to a humidity sensor used for humidity measurement, automatic control equipment, etc.
（従来技術とその問題点］
湿度上／すの用途が種々考えられ、ｃ７１度センサのニ
ーズは益々高まりつ＼ｂる。(Prior art and its problems) Various applications for humidity control/sugar are considered, and the need for C71 degree sensors is increasing more and more.
しかし、現在市販されて匹る’Ｓ種の抵抗型ｍ度センサ
は、相対湿度が３０％ＲＨ以下の低湿度では交流信号に
対するインピーダンスが高すぎて測定できないという欠
点があつ九。However, the current commercially available 'S type resistance-type m-degree sensors have the disadvantage that they cannot be measured at low relative humidity of 30% RH or less because the impedance to AC signals is too high.
騙Ｉ４２ ↓ｆ閂暑傷−介 甲１０．塾本１倉〉１
−ｖ、ｏ、 ｔ Ｏ，５〜２．０モル％、 Ｌｈ （
３０ｓ ｋ ０．２−０．５モル％含む組成からなる金
属酸化物半導体焼結体に電極を設は九湿度センサに、第
２図の感湿特性図に示すように、相対湿度が２５％ＲＨ
以下の場合１交流傷号に対するインピーダンスは１０に
Ωを起えるため測定が不１１である。Deception I42 ↓f 閂薇區-Suke Ko 10. Jukuhon 1 storehouse〉1
-v, o, t O, 5 to 2.0 mol%, Lh (
As shown in the moisture sensitivity characteristic diagram in Figure 2, an electrode was installed on a metal oxide semiconductor sintered body having a composition containing 0.2-0.5 mol% of 30s k. R.H.
In the following case, the impedance for one AC signal is 10Ω, so the measurement is 11.
そこで本発明は低湿度領域の測定が可能な湿度センサ、
つｉり低湿度領域にｆ？ける交流信号に対するインピー
ダンスが低ｉ湿度センサを提供することを目的とする。Therefore, the present invention provides a humidity sensor capable of measuring low humidity areas.
F in the low humidity area? It is an object of the present invention to provide a humidity sensor with a low impedance to an alternating current signal.
（問題点を解決するための手段］
この目的を達成する丸めに、本発明に次の↓つな構成と
している。(Means for Solving the Problems) To achieve this objective, the present invention has the following configurations.
即ち、本発明は、感湿特性を示す金属酸化物半導体焼結
体金用いた湿度セ／すにおいて、前記金属酸化物半導体
焼結体にシラン化合吻？言−又は塗布したものでるる。That is, the present invention provides a humidity sensor using a metal oxide semiconductor sintered body exhibiting moisture-sensitive characteristics, in which a silane compound is added to the metal oxide semiconductor sintered body. The word - or the one that has been applied.
（作用ン 金属酸化切半導体の湿度による抵抗値の変化瓜。(Action Changes in resistance due to humidity in metal oxide semiconductors.
吸ｄし九本分子の解離に工って生じたプロトンが電、荷
０キャリヤとしてホッピングにより移動する表面伝導機
構全原理としてｉる。The entire principle of the surface conduction mechanism is that protons generated by adsorption and dissociation of nine molecules move by hopping as charge-free carriers.
本発明のように、金成醒化物半導体焼結体に無極性分子
でおるシラン化合物を含浸又は塗布しで吸涜水とセンサ
基質との間にシラン化合′ａｔ−介在させると、この間
に働く結合力が弱くなり、プロトンのホッピング現象金
促進し、交流信号によるインピーダンス全低下させる作
用がある。As in the present invention, when a silane compound, which is a non-polar molecule, is impregnated or coated on a sintered compound semiconductor and a silane compound is interposed between the sterilized water and the sensor substrate, the bond that acts between them can be created. This weakens the force, promotes the proton hopping phenomenon, and has the effect of completely reducing the impedance caused by AC signals.
従って、本発明による湿度センサに工れば３Ｇ％几Ｈ以
下の相対１１１度の測定が可能になると共に。Therefore, if the humidity sensor according to the present invention is constructed, it becomes possible to measure a relative temperature of 111 degrees below 3G%H.
低湿度における低抵抗化が実現できるので、湿度センサ
を小型化でさる利点が１凱安価で信頼性ある汎用型の湿
度センサを提供することができるもので、実用上画期的
なもので６る。Since it is possible to achieve low resistance at low humidity, the advantage of miniaturizing the humidity sensor is that it is possible to provide a general-purpose humidity sensor that is inexpensive and reliable, which is revolutionary in practical terms. Ru.
シラン化合物として、ジクロルジアルコキシシラン、ジ
クロルジ・メチル・シラン、ジクロルジエチルシラン、
ジクロルジフェノールシクン、ジクロルジビニルシラン
等を用いることができる。As a silane compound, dichlorodialkoxysilane, dichlorodimethylsilane, dichlorodiethylsilane,
Dichlordiphenolsicone, dichlordivinylsilane, etc. can be used.
（！！施例）
酸化チタンＴｉ ｏｚに炭酸リチウムＬｉｓ ０Ｏｓｔ
０．２〜０．５モル％、５献化バナジウムＶｚ Ｏｓ
’Ｋ Ｏ，５〜２．０モル％及びステアリンＵＩＯ逼
−！ｔ％金力口えたものを原料として、第１凶に示す工
うな直径１．５胃φ、艮ざ杓２＝１１１の素子１金成形
すると共に白金層を使った′超極２，３を埋設し、それ
ｋ ８００”〜１０００℃で１時間焼成し＊ｆ＆、 ジ
クロルジエチルシラン中に凌漬し％ １０Ｔｏｒｒ；程
度の真空中で放置して素子１ＣＪ？にジクロルジメチル
シ２ンｆｔゴ浸δせる。(!!Example) Lithium carbonate Lis 0 Ost on titanium oxide Ti oz
0.2-0.5 mol%, vanadium pentachloride Vz Os
'KO, 5-2.0 mol% and stearin UIO! Using t% gold as a raw material, we molded an element of 1 gold with a diameter of 1.5 φ and a diameter of 2 = 111 as shown in the first example, and also used a platinum layer to form 'Superpoles 2 and 3. bury it, sinter it for 1 hour at 800" to 1000°C, immerse it in dichlorodiethylsilane, leave it in a vacuum of about 10 Torr, and apply dichlorodimethylsilane to the element 1CJ?. It can be immersed.
その湿度センサのＭ＆湿特性金示すと第２図にボす」ジ
で、シラン化合物金言皮させｌい従来の湿度センサに比
し、低湿度領域における交流信号によるインピーダンス
は著しく低下している。The M&humidity characteristics of the humidity sensor are shown in FIG. 2, and the impedance due to AC signals in the low humidity region is significantly lower than that of conventional humidity sensors made of silane compounds.
従って、本発明による湿度セン？七使えは、従来不可能
とされてい文相対湿度が３９％ＲＨ以下の低湿度領域の
測定が可能となり、その工爽的１曲値極めて大である。Therefore, the humidity sensor according to the present invention? Seven uses enable measurements in the low humidity range of 39% RH or less, which was previously considered impossible, and its engineering value is extremely large.
そして、本発明によれば、低τ１［における低抵抗化が
実現できるので、ｔＩ湿度センサ小型化？図ることがで
き、用途を著しく拡大し得る効果が６る。According to the present invention, it is possible to realize a low resistance at low τ1[, so the tI humidity sensor can be made smaller. This has the effect of significantly expanding the range of applications.
なおｉｉ１図の実施例は１円柱状タイプのものを示し九
が、湿度センサの構造はこのタイツのものに限定される
もので槌なぐ、公知のあらゆるタイプのものに適用でき
る。Although the embodiment shown in Figure 21 shows a cylindrical type, the structure of the humidity sensor is not limited to this type of tights, but can be applied to any known type.
例えば、１１！Ｌ極パターンを印刷焼付し九寸法約１２
．５ Ｘ １３．０−アルミナ板に素子を厚膜印刷して
焼成し、それにシラン化合！１１１！Ｆｔ−含浸させて
も同様の特性のものが得られる。For example, 11! Print and bake the L pole pattern, 9 dimensions approx. 12
．． 5 x 13.0 - Thick film printing of elements on alumina plate, firing, and silane compounding! 111! Similar characteristics can be obtained by Ft-impregnation.
第１図は本発明の実施の一例の斜視図、第２図は感湿時
性図でろる。
１・・・素子、２及び３・・・電極
特許出願人 秩父セメント株式会社
いニーＩＥ“−一一じ
第１図
第２図FIG. 1 is a perspective view of an embodiment of the present invention, and FIG. 2 is a humidity sensitivity diagram. 1...Element, 2 and 3...Electrode Patent Applicant Chichibu Cement Co., Ltd. Ini IE"-11 Figure 1 Figure 2
Claims (1)
センサにおいて、前記金属酸化物半導体焼結体にシラン
化合物を含浸又は塗布したことを特徴とする湿度センサ
。1. A humidity sensor using a metal oxide semiconductor sintered body exhibiting moisture-sensitive characteristics, characterized in that the metal oxide semiconductor sintered body is impregnated or coated with a silane compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60171191A JPS6232349A (en) | 1985-08-05 | 1985-08-05 | Humidity sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60171191A JPS6232349A (en) | 1985-08-05 | 1985-08-05 | Humidity sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6232349A true JPS6232349A (en) | 1987-02-12 |
Family
ID=15918696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60171191A Pending JPS6232349A (en) | 1985-08-05 | 1985-08-05 | Humidity sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6232349A (en) |
-
1985
- 1985-08-05 JP JP60171191A patent/JPS6232349A/en active Pending
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