JPS6232601A - Moisture sensor element - Google Patents
Moisture sensor elementInfo
- Publication number
- JPS6232601A JPS6232601A JP60171012A JP17101285A JPS6232601A JP S6232601 A JPS6232601 A JP S6232601A JP 60171012 A JP60171012 A JP 60171012A JP 17101285 A JP17101285 A JP 17101285A JP S6232601 A JPS6232601 A JP S6232601A
- Authority
- JP
- Japan
- Prior art keywords
- sensor element
- electrical resistance
- resistance value
- humidity
- moisture sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- MOUPNEIJQCETIW-UHFFFAOYSA-N lead chromate Chemical group [Pb+2].[O-][Cr]([O-])(=O)=O MOUPNEIJQCETIW-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 1
- 229910052808 lithium carbonate Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 229910001954 samarium oxide Inorganic materials 0.000 description 1
- 229940075630 samarium oxide Drugs 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Landscapes
- Non-Adjustable Resistors (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
この発明はＰｂ２ＣｒＯＳ−を主成分として構成した湿
度センサー素子に間し、湿度の広い範囲に渡ってずぐれ
た検知感度を示す素子に係わる。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a humidity sensor element composed mainly of Pb2CrOS-, which exhibits excellent detection sensitivity over a wide range of humidity.
（イ）産業上の利用分野
Ｐｂ２．Ｃｒ０５−に希土類元素である酸化ランタンＬ
ａ。(b) Industrial application field Pb2. Lanthanum oxide L, a rare earth element, in Cr05-
a.
０２．酸化サマリウムＳ ｍ ｚＯ３＋酸化ネオジウム
Ｎｄ２Ｏうなどを微ｆｉｔ添加することにによりそのＴ
Ｌ電気抵抗値低下させ、かつ電気抵抗値の温度変化を少
なくすることができる。このようにして電気抵抗を制御
したＰｂ２Ｃｒｔテに二酸化チタンＴｉＯ□、炭酸リチ
ウム１２ＣＯ）を適量加えて得られた磁器あるいは厚膜
はン四度の変化に対して敏感にその電気抵抗値の変化を
示し、家庭、倉庫、温室なとの空調、電子機器、精密機
械の湿度センサー素子として広く応用される。02. By adding a small amount of samarium oxide S m zO3 + neodymium oxide Nd2O, etc., the T
It is possible to lower the L electrical resistance value and to reduce temperature changes in the electrical resistance value. Porcelain or thick film obtained by adding appropriate amounts of titanium dioxide (TiO□, lithium carbonate (12CO)) to Pb2Crt whose electrical resistance has been controlled in this way is sensitive to changes in its electrical resistance value. It is widely applied as a humidity sensor element for air conditioning in homes, warehouses, and greenhouses, electronic equipment, and precision machinery.
（０）従来の技術
これまでの湿度検出用酸化物半導体センサー素子として
はＭｇＣｒ２Ｏ４づ１０？系、Ｔｉ０ｌ−ＶｉＯｒ系、
Ｚｎ０−Ｃｒ、０３系、Ｃａ１ｏ（ＰＯ４）６（ＯＨ）
ｚ系なとがあげられる。(0) Conventional technology Conventional oxide semiconductor sensor elements for detecting humidity have been MgCr2O410? system, Ti0l-ViOr system,
Zn0-Cr, 03 series, Ca1o(PO4)6(OH)
One example is the Z series.
（ハ）発明が解決しようとする問題点
これまでの湿度検出用酸化物半導体センサー素子は製造
時の焼成に１１００ ’Ｃ−１３００°Ｃといった高い
温度を必要とする、母体の電気抵抗値が大きい、薄形と
する加工に手間がかかる、加熱クリーニングを必要とす
る、素子間のバラツキが大きい、経時変化が大きいなど
幾つかの問題点があった。(c) Problems to be solved by the invention Conventional oxide semiconductor sensor elements for humidity detection require high temperatures such as 1100'C to 1300°C for baking during manufacturing, and the electrical resistance of the matrix is large. However, there were several problems such as it took time and effort to make it thin, it required heating cleaning, there was large variation between elements, and there was a large change over time.
（ニ）問題点を解決するための手段
Ｐｂ２ＣｒＯｒを主成分とした湿度センサー素子は図１
の製造工程図に表わしたように仮焼温度８５０’Ｃ１熱
処理温度６５０’Ｃと低温処理で製造ができる。(d) Means for solving the problem A humidity sensor element whose main component is Pb2CrOr is shown in Figure 1.
As shown in the manufacturing process diagram, the product can be manufactured at a low temperature with a calcination temperature of 850'C and a heat treatment temperature of 650'C.
Ｌａ、０．、Ｎｄ２．０３．Ｓｍ２Ｏ３なとの希土類元
素を数ａｔ％加えることによりｆｒＬ気抵抗抵抗値５°
Ｃにおいて１ＯＯＫＱ・ｃｍに低下でき同時に電気抵抗
値の温度変化を小さくする。またＴｉＯ□を約２０讐ｔ
％加えることて特性の安定化ができる。特に厚膜形の場
合はトリミングにより素子電気抵抗値のバラツキをなく
し製造工程が簡素化される。La, 0. , Nd2.03. By adding several at% of rare earth elements such as Sm2O3, the frL resistance value can be reduced to 5°.
C, it can be reduced to 1OOKQ·cm, and at the same time, the temperature change in the electrical resistance value can be reduced. Also, add about 20 tons of TiO□.
By adding %, the characteristics can be stabilized. Particularly in the case of a thick film type, trimming eliminates variations in element electrical resistance and simplifies the manufacturing process.
（ホ）発明の効果
Ｐｂ、Ｃｒ０ｒを主成分とした湿度センサー素子は湿度
の変化に対して敏感な電気抵抗値変化と素早い応答特性
をもち従来の酸化物半導体センサー素子に比へ低い抵抗
値をもつので電子回路素子としての応用が簡単になった
。素子の電気抵抗値のバラツキがなくなり互換性のある
ものとなった。熱処理温度は８５０°Ｃ以下となり製造
工程の簡素化がなされた。また経時変化は室内に６力月
放置した場合でもほとんど生じない。(e) Effects of the invention A humidity sensor element mainly composed of Pb and Cr0r has electrical resistance value changes that are sensitive to changes in humidity and quick response characteristics, and has a lower resistance value than conventional oxide semiconductor sensor elements. This makes it easy to apply it as an electronic circuit element. This eliminates variations in the electrical resistance values of the elements and makes them compatible. The heat treatment temperature was 850°C or less, simplifying the manufacturing process. In addition, almost no change occurs over time even when left indoors for 6 months.
第１図は厚膜形湿度センサー素子の製造工程図、第２図
は電気抵抗値の湿度特性、第３図は電気抵抗値の湿度変
化に対する応答特性である。FIG. 1 is a manufacturing process diagram of a thick film type humidity sensor element, FIG. 2 is a diagram showing humidity characteristics of electrical resistance value, and FIG. 3 is a response characteristic of electrical resistance value to changes in humidity.
Claims (1)
た湿度センサー素子。A humidity sensor element whose main component is lead chromate pentoxide (Pb_2CrO_5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60171012A JPS6232601A (en) | 1985-08-05 | 1985-08-05 | Moisture sensor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60171012A JPS6232601A (en) | 1985-08-05 | 1985-08-05 | Moisture sensor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6232601A true JPS6232601A (en) | 1987-02-12 |
Family
ID=15915458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60171012A Pending JPS6232601A (en) | 1985-08-05 | 1985-08-05 | Moisture sensor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6232601A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62278441A (en) * | 1986-05-28 | 1987-12-03 | Koji Toda | Moisture sensing element |
-
1985
- 1985-08-05 JP JP60171012A patent/JPS6232601A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62278441A (en) * | 1986-05-28 | 1987-12-03 | Koji Toda | Moisture sensing element |
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