JPS6233280Y2 - - Google Patents
Info
- Publication number
- JPS6233280Y2 JPS6233280Y2 JP13832181U JP13832181U JPS6233280Y2 JP S6233280 Y2 JPS6233280 Y2 JP S6233280Y2 JP 13832181 U JP13832181 U JP 13832181U JP 13832181 U JP13832181 U JP 13832181U JP S6233280 Y2 JPS6233280 Y2 JP S6233280Y2
- Authority
- JP
- Japan
- Prior art keywords
- heater
- opening
- source chamber
- source
- end surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 210000004027 cell Anatomy 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Particle Accelerators (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Description
【考案の詳細な説明】
本考案は分子線蒸着装置、特にソース源を収納
し、かつ斯るソース源を加熱するためのクヌーセ
ン型セルの構造に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a molecular beam deposition apparatus, and more particularly to the structure of a Knudsen cell for housing and heating a source.
第１図は従来のこの種装置を示し、１は一端面
１ａの略中央に開孔２が穿設された有底円筒形の
ソース源室であり、該ソース源室１はBN（ボロ
ンナイトライド）、カーボンもしくは石英等耐熱
材料からなる。３は該ソース源室１の側壁１ｂに
らせん状に巻回された第１ヒータ、４は上記ソー
ス源室１の他端面１ｃに位置する熱電対、５は上
記開孔２を除くソース源室１、第１ヒータ３及び
熱電対４を覆う熱シールド体であり、該シールド
体はタンタルからなる。 FIG. 1 shows a conventional device of this type, in which reference numeral 1 denotes a cylindrical source chamber with a bottom and an opening 2 formed approximately in the center of one end surface 1a. made of heat-resistant materials such as carbon or quartz. 3 is a first heater spirally wound around the side wall 1b of the source chamber 1; 4 is a thermocouple located on the other end surface 1c of the source chamber 1; 5 is the source chamber excluding the opening 2; 1. A heat shield body that covers the first heater 3 and thermocouple 4, and the shield body is made of tantalum.
上記装置では第１ヒータ３でソース源室１内に
収納されたソース源６を加熱蒸発させて上記開孔
２より分子線として噴出させる。またこのときソ
ース源室１の温度は熱電対４からの信号により上
記第１ヒータ３に流れる電流を制御することによ
り制御される。 In the above apparatus, a source source 6 housed in a source source chamber 1 is heated and evaporated by a first heater 3, and ejected as a molecular beam from the opening 2. At this time, the temperature of the source source chamber 1 is controlled by controlling the current flowing through the first heater 3 by a signal from a thermocouple 4.
ところが、実際には例え熱シールド体５がソー
ス源室１全体を覆つていても斯るソース源室１の
温度は均一にはならず、開孔２が穿設された一端
面１ａ側の温度がやや低くなる傾向があつた。 However, in reality, even if the heat shield body 5 covers the entire source chamber 1, the temperature of the source chamber 1 is not uniform, and the temperature on the one end surface 1a side where the opening 2 is formed is not uniform. There was a tendency for the temperature to become slightly lower.
そこで、一端面１ａ側のヒータ線の巻数をやや
多くして温度低下を小さくする方策などが採用さ
れているが、第１ヒータ３より最長距離に位置す
る開孔２周辺は温度低下が免がれず、甚しい場合
一旦ソース源室１内で蒸発したソースが開孔２周
辺に付着し、デンドライド状に成長していき開孔
２が狭窄されるのみならずついには閉塞する事態
が発生する危惧があつた。 Therefore, measures have been taken to reduce the temperature drop by slightly increasing the number of turns of the heater wire on the one end surface 1a side, but the temperature drop is inevitable around the opening 2, which is located at the longest distance from the first heater 3. In extreme cases, the source that has evaporated inside the source chamber 1 may adhere to the area around the opening 2 and grow like a dendrite, causing the opening 2 to not only become narrower but also eventually to become clogged. It was hot.
本考案は斯る点に鑑みてなされたもので以下一
実施例につき説明する。 The present invention has been devised in view of this point, and one embodiment will be described below.
第２図、第３図は本考案の一実施例装置を示
す。尚第１図と同一箇所には同一番号を付して説
明を省略する。 FIGS. 2 and 3 show an embodiment of the present invention. It should be noted that the same parts as in FIG. 1 are given the same numbers and their explanations will be omitted.
第２図、第３図において、７はソース源室１の
一端面１ａに配された第２ヒータであり、該第２
ヒータ７は上記開孔２を整合する孔を有した略ド
ーナツ形状をなすと共にスポツト溶接により第１
ヒータ３に電気的に接続固定されている。８は上
記第２ヒータ７を覆う絶縁シールド体であり、該
絶縁シールド体８は例えばパイロリテイツクポロ
ンナイトライドのような絶縁、耐熱性に秀れた材
料により構成され得る。 In FIGS. 2 and 3, 7 is a second heater disposed on one end surface 1a of the source chamber 1;
The heater 7 has a substantially donut shape with a hole that aligns with the opening 2, and the first heater 7 is formed by spot welding.
It is electrically connected and fixed to the heater 3. Reference numeral 8 denotes an insulating shield body that covers the second heater 7, and the insulating shield body 8 may be made of a material with excellent insulation and heat resistance, such as pyrolytic polon nitride.
本実施例装置では、ソース源室１の一端面１ａ
に配された第２ヒータ７により斯る端面も充分に
加熱されるので従来のようにソースがデンドライ
ド状に成長して開孔２を閉塞する危惧はなく、効
率良く分子線を噴出することができる。 In the device of this embodiment, one end surface 1a of the source chamber 1
Since this end face is also sufficiently heated by the second heater 7 arranged at can.
また、上記第２ヒータ７材料としては高温下で
蒸発しないことが重要であり、好適例としてはタ
ンタルが良く、本実施例では約50μｍ厚のタンタ
ル箔を用いた。 Further, it is important that the material of the second heater 7 does not evaporate at high temperatures, and a suitable example is tantalum, and in this example, tantalum foil with a thickness of about 50 μm was used.
以上の説明から明らかな如く、本考案の分子線
蒸着装置では第２ヒータにより開孔周辺の温度低
下がなくなるので斯る開孔の狭窄及び閉塞現象が
防止できる。 As is clear from the above description, in the molecular beam evaporation apparatus of the present invention, since the temperature around the opening is prevented from decreasing by the second heater, such narrowing and clogging of the opening can be prevented.
第１図は従来のクヌーセン型セルを示す断面
図、第２図及び第３図は本考案の一実施例を示す
要部拡大断面図及び平面図である。
１……ソース源室、３……第１ヒータ、７……
第２ヒータ。
FIG. 1 is a sectional view showing a conventional Knudsen type cell, and FIGS. 2 and 3 are an enlarged sectional view and a plan view of essential parts showing an embodiment of the present invention. 1... Source chamber, 3... First heater, 7...
Second heater.
Claims (1)
室、該ソース源室の側面に巻回された第１ヒー
タ、上記開孔周縁に配され上記第１ヒータと電
気的に接続された第２ヒータからなることを特
徴とする分子線蒸着装置。 (2) 上記実用新案登録請求の範囲第１項におい
て、上記第２ヒータはタンタルからなることを
特徴とする分子線蒸着装置。[Claims for Utility Model Registration] (1) A bottomed cylindrical source chamber having an opening on one end surface, a first heater wound around the side surface of the source chamber, a first heater arranged around the periphery of the opening, and A molecular beam evaporation apparatus comprising a second heater electrically connected to a first heater. (2) The molecular beam evaporation apparatus according to claim 1, wherein the second heater is made of tantalum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13832181U JPS5843940U (en) | 1981-09-17 | 1981-09-17 | Molecular beam evaporation equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13832181U JPS5843940U (en) | 1981-09-17 | 1981-09-17 | Molecular beam evaporation equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5843940U JPS5843940U (en) | 1983-03-24 |
| JPS6233280Y2 true JPS6233280Y2 (en) | 1987-08-25 |
Family
ID=29931549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13832181U Granted JPS5843940U (en) | 1981-09-17 | 1981-09-17 | Molecular beam evaporation equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5843940U (en) |
-
1981
- 1981-09-17 JP JP13832181U patent/JPS5843940U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5843940U (en) | 1983-03-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4748367A (en) | Contact heater for piezoelectric effect resonator crystal | |
| JP7504896B2 (en) | Cooking device having a cooking vessel and a ceramic heater - Patents.com | |
| JPH0443414B2 (en) | ||
| US2693521A (en) | Heater for vacuum metalizing apparatus | |
| JPS6233280Y2 (en) | ||
| US2685020A (en) | Insecticide vaporizer | |
| US2690501A (en) | Vaporizer for insecticides and the like | |
| US4482799A (en) | Evaporation heater | |
| JPH0254426B2 (en) | ||
| US5671322A (en) | Lateral flash evaporator | |
| JPH0514470Y2 (en) | ||
| JPS6043913B2 (en) | Crucible for evaporation source | |
| US4626612A (en) | Foamed multiple thermocouple | |
| JPS6210298B2 (en) | ||
| JPH03177563A (en) | Crucible for evaporation source | |
| JPH05345971A (en) | Evaporating source and vapor deposition method | |
| JPH11312572A (en) | Ceramic heater | |
| US4113978A (en) | Evaporation source for vacuum deposition | |
| JPH0534426B2 (en) | ||
| JPH0526722Y2 (en) | ||
| JPS61279088A (en) | Tubular heater for evaporation | |
| JPH01208451A (en) | Evaporation method and crucible for sublimable substances | |
| JP2000239831A (en) | Crucible for vacuum deposition | |
| JPH0584868B2 (en) | ||
| JPS5943871A (en) | Vessel for storing material to be evaporated |