JPS6233331Y2 - - Google Patents
Info
- Publication number
- JPS6233331Y2 JPS6233331Y2 JP1982080000U JP8000082U JPS6233331Y2 JP S6233331 Y2 JPS6233331 Y2 JP S6233331Y2 JP 1982080000 U JP1982080000 U JP 1982080000U JP 8000082 U JP8000082 U JP 8000082U JP S6233331 Y2 JPS6233331 Y2 JP S6233331Y2
- Authority
- JP
- Japan
- Prior art keywords
- heat dissipation
- semiconductor device
- metal cap
- heat
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
Description
【考案の詳細な説明】
(a) 考案の技術分野
本考案は気密封止形半導体装置の金属冷却体
(放熱フイン)取付に係り、特に作業性に優れ、
耐熱強度に有効な取付構造に関する。[Detailed description of the invention] (a) Technical field of the invention This invention relates to the installation of metal cooling bodies (radiating fins) for hermetically sealed semiconductor devices, and has particularly excellent workability.
This article relates to a mounting structure that is effective for heat resistance and strength.
(b) 技術の背景
一般に半導体素子は特性上又は信頼性の点から
許される最高許容温度がありシリコン半導体では
75〜200℃、ゲルマニウム半導体では75〜110℃で
ある。(b) Technical background Generally, semiconductor devices have a maximum allowable temperature from the viewpoint of characteristics or reliability, and silicon semiconductors have a maximum allowable temperature.
75-200°C, and 75-110°C for germanium semiconductors.
装置の熱特性は一般に熱抵抗という値で表され
る。電力用又は大電流容量の半導体素子は一種の
発熱体をなすから特性変動を防止するための熱抵
抗を小さくする放熱構造を備えるのが一般的でそ
の一例として放熱フインを取付けて放熱する方法
がある。装置の表面から空気中までの熱抵抗は外
部熱抵抗とよばれ1/hs(h:熱伝導率、s:
表面積)なる式で表わされる。hを定数と見なす
と、表面積の総和が大きい程有効に作用する。 The thermal characteristics of a device are generally expressed as a value called thermal resistance. Semiconductor elements for power use or with large current capacity constitute a type of heating element, so they are generally equipped with a heat dissipation structure that reduces thermal resistance to prevent characteristic fluctuations.One example is a method of attaching heat dissipation fins to dissipate heat. be. The thermal resistance from the surface of the device to the air is called the external thermal resistance and is 1/hs (h: thermal conductivity, s:
surface area). If h is regarded as a constant, the larger the total surface area, the more effective the effect.
(c) 従来技術と問題点
気密封止形半導体装置に放熱フインを取付けた
従来体例を第1図及び第2図に示す。(c) Prior art and problems Figures 1 and 2 show examples of conventional devices in which heat dissipation fins are attached to hermetically sealed semiconductor devices.
第1図は両端のセラミツク面に樹脂接着した例
であり、第2図は金属又はセラミツクキヤツプに
直接樹脂接着した従来例を示す。 FIG. 1 shows an example in which resin is bonded to ceramic surfaces at both ends, and FIG. 2 shows a conventional example in which resin is bonded directly to metal or ceramic caps.
第1図の例ではセラミツク基板2の凹部に半導
体素子3を実装し、素子の周辺部に設けた信号線
接続用パツドとセラミツク基板2に設けたメタラ
イズ導体とをワイヤ4を介してボンデング接続
し、セラミツク又は金属のキヤツプ5を金、錫半
田でシールする気密封止形の半導体装置1を形成
する。中央に凹部を設けた斜線で示す放熱フイン
6を半導体装置1の上面に接着固定する。放熱フ
イン6は熱伝導性のよいアルミ合金で形成され表
面積を増すための突起片8を複数個備え、軽量化
を計つている。また放熱フイン6の底面には凹部
を備え、半導体装置1のキヤツプ5に間隙を持た
せ両端を図のようにエポキシ樹脂7で接着固定す
る。 In the example shown in FIG. 1, a semiconductor element 3 is mounted in a recessed part of a ceramic substrate 2, and a signal line connection pad provided around the element is bonded to a metallized conductor provided on the ceramic substrate 2 via a wire 4. Then, a hermetically sealed semiconductor device 1 is formed by sealing a ceramic or metal cap 5 with gold or tin solder. A heat dissipation fin 6 shown by diagonal lines and having a recessed portion in the center is adhesively fixed to the upper surface of the semiconductor device 1 . The heat dissipation fin 6 is made of aluminum alloy with good thermal conductivity, and is provided with a plurality of protruding pieces 8 to increase the surface area, thereby reducing the weight. Further, the bottom surface of the heat dissipation fin 6 is provided with a recessed portion, and both ends thereof are adhesively fixed with epoxy resin 7 as shown in the figure, with a gap provided between the cap 5 of the semiconductor device 1 and the cap 5 of the semiconductor device 1.
第2図の例では金属又はセラミツクのキヤツプ
5に底面が平坦な放熱フイン6′を直接エポキシ
樹脂7′で接着固定したものである。 In the example shown in FIG. 2, a heat dissipating fin 6' with a flat bottom surface is directly bonded and fixed to a cap 5 made of metal or ceramic with an epoxy resin 7'.
しかしこの接着方法はエポキシ樹脂7,7′を
塗布し、150℃前後で熱硬化させるため、樹脂層
は熱ストレス等の環境試験等において脆弱となり
熱膨張係数の差異により影響を受け易く劣化す
る。場合によつては剥離するおそれも生ずる。 However, in this bonding method, the epoxy resins 7 and 7' are applied and thermally cured at around 150° C., so the resin layer becomes brittle in environmental tests such as heat stress, and is easily affected by differences in thermal expansion coefficients and deteriorates. In some cases, there is a risk of peeling.
(d) 考案の目的
本考案は上記の欠点に鑑み、放熱フインを半導
体装置の金属キヤツプに樹脂接着するとともに該
放熱フインを金属キヤツプの両端で係止させる、
熱ストレスに強い取付構造の提供を目的とする。(d) Purpose of the invention In view of the above-mentioned drawbacks, the present invention provides a method of bonding a heat dissipation fin to a metal cap of a semiconductor device with a resin and locking the heat dissipation fin at both ends of the metal cap.
The purpose is to provide a mounting structure that is resistant to heat stress.
(e) 考案の構成
上記目的は本考案によれば半導体素子の収容さ
れた容器を封止するU字型金属キヤツプの端部
が、放熱器に設けられた孔に挿入され、前記端部
を折り曲げることによつて前記放熱器が前記金属
キヤツプに固定されることによつて達せられる。(e) Structure of the invention According to the invention, the end of a U-shaped metal cap for sealing a container in which a semiconductor element is housed is inserted into a hole provided in a heat sink, and the end of the cap is inserted into a hole provided in a heat sink. This is achieved by fixing the heat sink to the metal cap by bending.
(f) 考案の実施例
以下本考案の実施例について図面により詳述す
る。(f) Examples of the invention Examples of the invention will be described below in detail with reference to drawings.
第3図は本考案の一実施例である放熱フインを
取付けた半導体装置を示す断面図である。 FIG. 3 is a sectional view showing a semiconductor device to which a heat dissipation fin is attached, which is an embodiment of the present invention.
第4図は本考案の一実施例を示す半導体装置の
斜視図である。 FIG. 4 is a perspective view of a semiconductor device showing an embodiment of the present invention.
気密封止形半導体装置11の金属キヤツプ12
をU字形に形成する。金属キヤツプ12はセラミ
ツク基板13に金−錫半田で封止し、放熱フイン
14を取付ける。放熱フイン14には金属キヤツ
プ12の両端に設けたU字形をなす突起部を貫通
させる角孔14aにより上面より挿着される。 Metal cap 12 of hermetically sealed semiconductor device 11
form into a U shape. The metal cap 12 is sealed to a ceramic substrate 13 with gold-tin solder, and a heat dissipation fin 14 is attached. The radiation fins 14 are inserted into the heat dissipation fins 14 from the upper surface through square holes 14a through which U-shaped protrusions provided at both ends of the metal cap 12 are passed.
金属キヤツプ12に放熱フイン14を取付ける
構造として、予じめ金属キヤツプ12にU字形の
突起片12aを設けて放熱フイン14を搭載し、
突起片12aを折曲させて放熱フイン14を係止
させる。このとき、従来と同様に、樹脂接着を併
用することもできる。 As a structure for attaching the heat dissipation fin 14 to the metal cap 12, a U-shaped projection piece 12a is provided on the metal cap 12 in advance and the heat dissipation fin 14 is mounted thereon.
The projection piece 12a is bent to lock the heat radiation fin 14. At this time, resin adhesion can also be used in conjunction with the conventional method.
このように樹脂固定と機械的な固定方法を併用
することにより従来に比して接合強度は更に向上
する。 By using both resin fixing and mechanical fixing methods in this way, the bonding strength is further improved compared to the conventional method.
金属キヤツプ12は鉄合金、銅合金何れでもよ
く実験に供した素材は42アロイ、コバール等を用
いたが何れも効果がある。熱ストレスにも十分耐
えられる構造とすることができ利用範囲は広い。 The metal cap 12 can be made of either an iron alloy or a copper alloy, and the materials used in experiments include 42 alloy and Kovar, and both are effective. It can be used in a wide range of applications as it can have a structure that can sufficiently withstand heat stress.
(g) 考案の効果
以上詳細に説明したように本考案の放熱フイン
取付構造とすることにより環境試験に耐えられる
熱ストレスに優れた効果があり応用範囲が広く、
その実用効果は著しい。(g) Effects of the invention As explained in detail above, the heat dissipation fin mounting structure of the invention has an excellent effect on thermal stress that can withstand environmental tests, and has a wide range of applications.
Its practical effects are remarkable.
第1図は両端のセラミツク面に樹脂接着した放
熱フイン取付構造の従来例を示す断面図、第2図
は半導体装置のキヤツプ面に樹脂接着した放熱フ
イン取付を示す従来例の断面図、第3図は本考案
の一実施例である放熱フインを取付けた半導体装
置を示す断面図、第4図は本考案の一実施例であ
る半導体装置の斜視図である。
図において、11は半導体装置、12は金属キ
ヤツプ、13はセラミツク基板、14は放熱フイ
ン、15は接着樹脂を示す。
Fig. 1 is a sectional view showing a conventional example of a heat dissipation fin mounting structure in which resin is bonded to the ceramic surfaces at both ends; Fig. 2 is a sectional view of a conventional example in which heat dissipation fins are mounted in resin bonded to the cap surface of a semiconductor device; The figure is a sectional view showing a semiconductor device to which a heat dissipation fin is attached, which is an embodiment of the present invention, and FIG. 4 is a perspective view of the semiconductor device, which is an embodiment of the present invention. In the figure, 11 is a semiconductor device, 12 is a metal cap, 13 is a ceramic substrate, 14 is a heat radiation fin, and 15 is an adhesive resin.
Claims (1)
金属キヤツプの端部が、放熱器に設けられた孔に
挿入され、前記端部を折り曲げることによつて前
記放熱器が前記金属キヤツプに固定されてなるこ
とを特徴とする半導体装置。 An end of a U-shaped metal cap that seals a container in which a semiconductor element is housed is inserted into a hole provided in a heat radiator, and the heat radiator is fixed to the metal cap by bending the end. A semiconductor device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1982080000U JPS58182434U (en) | 1982-05-31 | 1982-05-31 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1982080000U JPS58182434U (en) | 1982-05-31 | 1982-05-31 | semiconductor equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58182434U JPS58182434U (en) | 1983-12-05 |
| JPS6233331Y2 true JPS6233331Y2 (en) | 1987-08-26 |
Family
ID=30089159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1982080000U Granted JPS58182434U (en) | 1982-05-31 | 1982-05-31 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58182434U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4546335B2 (en) * | 2005-06-27 | 2010-09-15 | 富士通株式会社 | Package cooling device |
-
1982
- 1982-05-31 JP JP1982080000U patent/JPS58182434U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58182434U (en) | 1983-12-05 |
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