JPS6234714B2 - - Google Patents
Info
- Publication number
- JPS6234714B2 JPS6234714B2 JP16888083A JP16888083A JPS6234714B2 JP S6234714 B2 JPS6234714 B2 JP S6234714B2 JP 16888083 A JP16888083 A JP 16888083A JP 16888083 A JP16888083 A JP 16888083A JP S6234714 B2 JPS6234714 B2 JP S6234714B2
- Authority
- JP
- Japan
- Prior art keywords
- resist ink
- plating
- palladium
- tin
- electroless plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 29
- 238000007747 plating Methods 0.000 claims description 18
- 229910052763 palladium Inorganic materials 0.000 claims description 16
- 238000007772 electroless plating Methods 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000003054 catalyst Substances 0.000 claims description 7
- 239000012670 alkaline solution Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 description 12
- 229910010293 ceramic material Inorganic materials 0.000 description 10
- 238000007796 conventional method Methods 0.000 description 8
- 239000000084 colloidal system Substances 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 4
- 229910001432 tin ion Inorganic materials 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- -1 palladium ions Chemical class 0.000 description 2
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 2
- 235000011121 sodium hydroxide Nutrition 0.000 description 2
- 239000001119 stannous chloride Substances 0.000 description 2
- 235000011150 stannous chloride Nutrition 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001023 inorganic pigment Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 description 1
- 235000011118 potassium hydroxide Nutrition 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0562—Details of resist
- H05K2203/0565—Resist used only for applying catalyst, not for plating itself
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/184—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method using masks
Landscapes
- Chemically Coating (AREA)
Description
【発明の詳細な説明】
本発明はセラミツクの部分メツキ法に関す。
セラミツクの部分メツキ法として従来から行な
われている方法は次の様なものである。即ちセラ
ミツク素材上に所望するパターンをアルカリ可溶
性レジストインクを用いてマスキングを行ない乾
燥、脱脂、エツチング処理を経て塩化第一スズを
主成分としたスズ溶液を用いてスズイオンを付着
させ、次いで塩化パラジウムを主成分としたパラ
ジウム溶液でスズイオンの上にパラジウムイオン
を反応させることにより、金属パラジウム触媒を
付着せしめ無電解メツキを行う。そして水洗後レ
ジストインク部を剥離して部分メツキを行うもの
である。しかし乍らこの方法に依ればスズイオン
並びにパラジウムイオンはセラミツク部分だけで
なくレジストインク部分にも付着し触媒となるた
めにセラミツク部分ばかりでなくレジストインク
部分にもメツキが折出する。このためにメツキ後
レジストインク部だけを別途に剥離する必要があ
る。またこの従来法に於いてスズイオン濃度やパ
ラジウムイオン濃度を種々変化させてレジストイ
ンク部分えの上記イオンの付着を選択的に防止す
る試みもなされているが、セラミツク部分のみに
選択的に上記イオンを付着させることは出来な
い。
本発明者は従来法の上記難点を解消するために
研究を続けて来た結果、無電解メツキ工程前にレ
ジストインクを剥離して部分メツキが行なえない
であろうかとの全く新しい着想に至り、更に研究
を続けた結果、逆に本発明を完成するに至つた。
即ち本発明はセラミツク表面にアルカリ可溶性レ
ジストインクを用いて所望の箇所にマスキングを
行い、乾燥後、パラジウムとスズのコロイド触媒
を付着させ、アルカリ溶液と接触せしめて触媒の
活性化と共にレジストインクを溶解除去し、次い
で無電解メツキを行うことを特徴とするセラミツ
クの部分メツキ法に係る。
本発明法に於いては、先ずセラミツク素材上に
所望のパターンでレジストインクを用いてマスキ
ングを行う。次いで乾燥、脱脂、水洗、エツチン
グの通常の工程を経て、スズとパラジウムのコロ
イド液を用いてセラミツク表面及びレジストイン
ク表面両面にスズ及びパラジウムの混合コロイド
を付着させる。このコロイドはそのままでは活性
力に乏しくアルカリ溶液で活性化する。この際活
性化と同時にスズとパラジウムの付着したレジス
トインクを溶解除去しメツキすべき箇所だけにス
ズとパラジウム触媒(活性化された)を残存せし
める。次いで水洗後無電解することにより所望の
パターンにメツキが折出する。
本発明に於いて使用するセラミツク素材として
は各種のセラミツク素材が広い範囲で使用出来、
たとえば純アルミナ系、チタン酸バリウム系、フ
エライト系、ジルコン系の各セラミツクを例示出
来る。セラミツク素材の形状も特に制限は無く、
各種の形状のものが使用可能である。レジストイ
ンクとしてはアルカリ溶液で可溶性のものが使用
され、たとえば樹脂分としてマロン酸系樹脂、溶
剤としてエチルセロソルブ等のセロソルブ系溶
剤、及び無機顔料を含有するアルカリ可溶型レジ
ストインク等が好ましく使用される。該インクを
用いてマスキングする際のインクの厚みも特に限
定されず従来通りで良く、たとえば10〜50ミクロ
ン程度である。スズとパラジウムのコロイド液と
しては、通常これ等金属コロイドが水に分散した
液が使用される。これ等金属コロイドを活性化す
るアルカリ溶液としても通常のものが使用出来、
たとえば苛性ソーダや苛性カリの水溶液を代表例
として例示出来る。無電解メツキ自体も従来法に
従つてそのまま行えば良い。
本発明の特徴とする所をより明瞭にするために
図面を用いて本発明法と従来法の差異を下記に示
す。
第1〜3図はいずれも従来法に依る方法を模擬
的に図示したものであり、第1図はSn、Pdイオ
ンを付着させた後の状態、第2図は無電解メツキ
を行つた後の状態、第3図はレジストインク剥離
後の状態を示す。これ等図中1はセラミツク素
材、2は無電解メツキ膜、3はレジストインク被
膜、4はSn、5はPdを示す。第1図にも示す通
り従来法ではレジストインク被膜3にもSn及び
Pdイオンが付着し、この上に無電解メツキを施
こすと第2図に示す通りレジストインク被膜3上
にメツキ膜が形成される。次いでレジストインク
を除去すると、第3図に示す様な状態でメツキ膜
が残存しマスキング部分にもメツキ被膜が形成さ
れる。従つて従来法に依れば余分なメツキ被膜6
を別途に除去することが必要となる。この除去は
通常の機械的手段に従い行なわれるため完全に除
去し難く、加えてセラミツク素材に好ましくない
影響をあたえ、著しいときにはヒビやクラツクを
生ぜしめる。
一方第4〜6図は本発明法の模擬的な説明図で
あり、図面中の番号は第1〜3図と同じことを示
す。第4図はSn、Pdコロイド付着後の状態を、
第5図はレジストインク剥離及び活性化後の状態
を、また第6図は無電解メツキ後の状態を示す。
第4図に示す通りSn、Pdコロイドはセラミツク
素材及びレジストインク被膜上に付着するが、ア
ルカリ溶液で処理することにより、スズが溶解す
ると共にパラジウムコロイドが活性化されて残存
し、且つレジストインクが除去されて第5図に示
す様な状態となる。次いで無電解メツキを施こす
と第6図の様な状態となつて所望パターンでメツ
キが折出することとなる。
実施例
第7図に示す様に市松模様を、セラミツク素材
(96%アルミナ板)にレジストインク(マロン酸
樹脂系インク)を用いて印刷した。これを60℃で
乾燥後酸性キレート系物質で脱脂し、水洗後弗酸
によりエツチングした。次いでエツチングした板
をSn3%及びPd0.02%を含有するコロイド溶液に
5〜7分間浸漬し、NaOH水溶液に3〜5分間浸
漬し、水洗乾燥した。次いで無電解ニツケルメツ
キ浴または無電解銅メツキ浴を用いて30℃、30分
間の条件で無電解メツキを行い、水洗・乾燥し
た。これを10回繰返しレジストインクへの折出割
合を調査した。この結果を第1表に示す。
比較例
上記実施例に於いてエツチングを終つた材料に
塩化第一スズ3%を含む水溶液2分間浸漬し、次
いで塩化パラジウム0.02%水溶液に2分間浸漬
後、水洗乾燥し実施例1と同じ条件で無電解メツ
キを行なつた。この結果を第1表に併記する。
【表】DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for partially plating ceramics. The following is a conventional method for partially plating ceramics. That is, a desired pattern is masked on a ceramic material using an alkali-soluble resist ink, and after drying, degreasing, and etching, tin ions are attached using a tin solution containing stannous chloride as the main component, and then palladium chloride is applied. By reacting palladium ions on tin ions with a palladium solution as the main component, a metal palladium catalyst is deposited and electroless plating is performed. After washing with water, the resist ink portion is peeled off to perform partial plating. However, according to this method, tin ions and palladium ions adhere not only to the ceramic portion but also to the resist ink portion and act as catalysts, so that plating is deposited not only on the ceramic portion but also on the resist ink portion. For this reason, it is necessary to separately peel off only the resist ink portion after plating. Furthermore, in this conventional method, attempts have been made to selectively prevent the above ions from adhering to the resist ink area by varying the tin ion concentration and palladium ion concentration; It cannot be attached. As a result of continuing research to resolve the above-mentioned difficulties of conventional methods, the present inventor came up with a completely new idea that it would be possible to perform partial plating by peeling off the resist ink before the electroless plating process, and further As a result of continued research, the present invention was finally completed.
That is, in the present invention, desired areas are masked using an alkali-soluble resist ink on the ceramic surface, and after drying, a colloidal catalyst of palladium and tin is attached, and the resist ink is dissolved as the catalyst is activated by contacting with an alkaline solution. The present invention relates to a method for partially plating ceramic, which is characterized by removing the ceramic and then performing electroless plating. In the method of the present invention, first, masking is performed on a ceramic material in a desired pattern using resist ink. Next, through the usual steps of drying, degreasing, washing, and etching, a mixed colloid of tin and palladium is applied to both the ceramic surface and the resist ink surface using a colloidal solution of tin and palladium. This colloid has poor activation power as it is and can be activated with an alkaline solution. At this time, at the same time as activation, the resist ink with attached tin and palladium is dissolved and removed, leaving the tin and palladium catalyst (activated) only in the areas to be plated. Then, by washing with water and electroless treatment, plating is deposited in a desired pattern. A wide variety of ceramic materials can be used in the present invention.
Examples include pure alumina-based, barium titanate-based, ferrite-based, and zircon-based ceramics. There are no particular restrictions on the shape of the ceramic material,
Various shapes can be used. As the resist ink, one that is soluble in an alkaline solution is used. For example, an alkali-soluble resist ink containing a malonic acid resin as the resin component, a cellosolve solvent such as ethyl cellosolve as the solvent, and an inorganic pigment is preferably used. Ru. The thickness of the ink when masking is performed using the ink is not particularly limited and may be a conventional thickness, for example, about 10 to 50 microns. As the colloidal liquid of tin and palladium, a liquid in which these metal colloids are dispersed in water is usually used. These ordinary alkaline solutions can be used to activate metal colloids,
For example, an aqueous solution of caustic soda or caustic potash can be exemplified as a typical example. The electroless plating itself may be carried out according to the conventional method. In order to make the features of the present invention more clear, the differences between the method of the present invention and the conventional method will be shown below using drawings. Figures 1 to 3 are all simulated diagrams of the conventional method. Figure 1 shows the state after Sn and Pd ions have been deposited, and Figure 2 shows the state after electroless plating. FIG. 3 shows the state after the resist ink has been peeled off. In these figures, 1 is a ceramic material, 2 is an electroless plating film, 3 is a resist ink coating, 4 is Sn, and 5 is Pd. As shown in Figure 1, in the conventional method, the resist ink film 3 also contains Sn and
When Pd ions are attached and electroless plating is applied thereto, a plating film is formed on the resist ink film 3 as shown in FIG. When the resist ink is then removed, a plating film remains as shown in FIG. 3, and the plating film is also formed on the masking portion. Therefore, according to the conventional method, an excess plating film 6
must be removed separately. Since this removal is carried out according to conventional mechanical means, it is difficult to completely remove the ceramic material, and in addition, it has an undesirable effect on the ceramic material, and in severe cases can cause cracks and cracks. On the other hand, FIGS. 4 to 6 are schematic illustrations of the method of the present invention, and the numbers in the drawings indicate the same things as in FIGS. 1 to 3. Figure 4 shows the state after Sn and Pd colloids are attached.
FIG. 5 shows the state after resist ink peeling and activation, and FIG. 6 shows the state after electroless plating.
As shown in Figure 4, Sn and Pd colloids adhere to the ceramic material and the resist ink film, but by treatment with an alkaline solution, the tin is dissolved and the palladium colloids are activated and remain, and the resist ink is After being removed, the state shown in FIG. 5 is obtained. Next, when electroless plating is applied, a state as shown in FIG. 6 is obtained, and the plating is deposited in a desired pattern. Example As shown in FIG. 7, a checkered pattern was printed on a ceramic material (96% alumina plate) using resist ink (malonic acid resin ink). This was dried at 60°C, degreased with an acidic chelate substance, washed with water, and etched with hydrofluoric acid. The etched plate was then immersed in a colloidal solution containing 3% Sn and 0.02% Pd for 5 to 7 minutes, immersed in an aqueous NaOH solution for 3 to 5 minutes, washed with water, and dried. Next, electroless plating was performed using an electroless nickel plating bath or an electroless copper plating bath at 30° C. for 30 minutes, followed by washing and drying. This was repeated 10 times to investigate the ratio of precipitation to the resist ink. The results are shown in Table 1. Comparative Example The etched material in the above example was immersed in an aqueous solution containing 3% stannous chloride for 2 minutes, then immersed in a 0.02% palladium chloride aqueous solution for 2 minutes, washed with water and dried under the same conditions as in Example 1. Electroless plating was performed. The results are also listed in Table 1. 【table】
第1〜7図はいずれもメツキ法の各工程での状
態を模擬的に示した図である。図中1はセラミツ
ク素材、2はメツキ膜、3はレジストインク膜、
4はSn、5はPdを示す。
1 to 7 are diagrams schematically showing the conditions at each step of the plating method. In the figure, 1 is a ceramic material, 2 is a plating film, 3 is a resist ink film,
4 represents Sn and 5 represents Pd.
Claims (1)
ンクを用いて所望の箇所にマスキングを行い、乾
燥後、パラジウムとスズのコロイド触媒を付着さ
せ、アルカリ溶液と接触せしめて触媒の活性化と
共にレジストインクを溶解除去し、次いで無電解
メツキを行うことを特徴とするセラミツクの部分
メツキ法。1 Mask the desired areas on the ceramic surface using an alkali-soluble resist ink, and after drying, attach a colloidal catalyst of palladium and tin, bring it into contact with an alkaline solution to activate the catalyst, and dissolve and remove the resist ink. A partial plating method for ceramics, which is characterized in that electroless plating is then performed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16888083A JPS6060994A (en) | 1983-09-12 | 1983-09-12 | Partial plating process for ceramic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16888083A JPS6060994A (en) | 1983-09-12 | 1983-09-12 | Partial plating process for ceramic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6060994A JPS6060994A (en) | 1985-04-08 |
| JPS6234714B2 true JPS6234714B2 (en) | 1987-07-28 |
Family
ID=15876269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16888083A Granted JPS6060994A (en) | 1983-09-12 | 1983-09-12 | Partial plating process for ceramic |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6060994A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04102507U (en) * | 1991-02-05 | 1992-09-03 | 株式会社大林組 | electrical conduit |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62235473A (en) * | 1986-04-04 | 1987-10-15 | Nippon Mining Co Ltd | Alkali type catalytic solution for electroless plating |
| US6524645B1 (en) * | 1994-10-18 | 2003-02-25 | Agere Systems Inc. | Process for the electroless deposition of metal on a substrate |
-
1983
- 1983-09-12 JP JP16888083A patent/JPS6060994A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04102507U (en) * | 1991-02-05 | 1992-09-03 | 株式会社大林組 | electrical conduit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6060994A (en) | 1985-04-08 |
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