JPS6235211A - Laser scanning type outer diameter measuring instrument - Google Patents

Laser scanning type outer diameter measuring instrument

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Publication number
JPS6235211A
JPS6235211A JP17533485A JP17533485A JPS6235211A JP S6235211 A JPS6235211 A JP S6235211A JP 17533485 A JP17533485 A JP 17533485A JP 17533485 A JP17533485 A JP 17533485A JP S6235211 A JPS6235211 A JP S6235211A
Authority
JP
Japan
Prior art keywords
lens
outer diameter
collimating lens
light
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17533485A
Other languages
Japanese (ja)
Inventor
Chiaki Sato
千秋 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co Ltd filed Critical Olympus Optical Co Ltd
Priority to JP17533485A priority Critical patent/JPS6235211A/en
Publication of JPS6235211A publication Critical patent/JPS6235211A/en
Pending legal-status Critical Current

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  • Length Measuring Devices By Optical Means (AREA)

Abstract

PURPOSE:To miniaturize a measuring instrument by receiving the outgoing beam from the semiconductor laser having a polarization function through a collimating lens and condenser lens and by detecting the outer diameter of the measuring body inside the parallel beam moving zone between the collimating lens and condenser lens. CONSTITUTION:The outgoing beam from the semiconductor laser having the function to deflect the outgoing beam, namely from a beam scanning laser (BSL) 20 is made the parallel pencil of beams by a collimating lens 3, condensed by a condenser lens 10 and made incident on a beam detector 11. The parallel pencil of beams between the lens 3, 10 moves in parallel in the arrow mark direction Y and the beam after passing through the lens 10 moves in the arrow mark direction Z, when the outgoing beam of the BSL 20 is controlled with deflection in the arrow mark direction X. Therefore by measuring the beam shielding time by the measuring body 12 with the measuring system of the beam detector 11, etc. by placing the measuring body 12 of a fiber, etc., for instance, inside the parallel pencil of beams moving zone between the lens 3 and lens 10, the outer diameter thereof can be measured. The miniaturization of the outer diameter measuring instrument is thus enabled.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、例えば光ファイ・クー、ta、ケーブル等の
測定物の外径をレーザ走査によ)測定する弁参呑衾→レ
ーザ走査型外径測定器に関しj、。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention is directed to a laser scanning method for measuring the outer diameter of an object to be measured, such as an optical fiber, TA, cable, etc., by laser scanning. Concerning outside diameter measuring instruments.

特に装置構造の簡略化手段に関する。In particular, it relates to means for simplifying the device structure.

〔従来の技術〕[Conventional technology]

レーザ走査型外径測定器は、非接触状態で外径寸法を迅
速かつ高精度に測定できることから、極めて幅広い産業
分野での生産工程や検査工程等に導入されておシ、工程
の自動化に大きく貢献している。
Laser scanning outer diameter measuring instruments can quickly and accurately measure outer diameter dimensions in a non-contact manner, so they have been introduced into production processes and inspection processes in an extremely wide range of industrial fields, and are greatly contributing to process automation. Contributing.

レーザ走査型外径測定器における測定原理は、一定の速
さで走査を繰返すレーザ光束の中に測定物を置き、測定
物によって生じる影の長さを受光器で検出することによ
って、外径測定を行なうものである。
The measurement principle of a laser scanning outer diameter measuring device is to place the object to be measured in a laser beam that repeatedly scans at a constant speed, and use a receiver to detect the length of the shadow created by the object. This is what we do.

第9図は従来のレーザ走査型外径測定器の構成を示す図
である。レーザIから出射したレーザ光はミラー2 a
 r 2 bおよびコリメートレンズ3を通シ、ポリゴ
ンミラー4に入射する。ポリゴンミラー4は発振器5の
出力信号に応動するモータドライバ6によって駆動され
るモータ7に連結されている。ポリゴンミラー4からの
反射光は、コリメートレンズ3により平行光束化された
のち、第1の窓8および第2の窓9を通過して集光レン
ズ10により集光され、光検出器11に入射する。この
とき第1、第2の窓8.9間の平行光束移動領域内に置
かれた測定物I2により平行光束の一部が遮られるので
、光検出器11の出力信号にはエツジ部が生じる。
FIG. 9 is a diagram showing the configuration of a conventional laser scanning type outer diameter measuring instrument. The laser beam emitted from laser I is mirror 2a
It passes through r 2 b and collimating lens 3 and enters polygon mirror 4 . The polygon mirror 4 is connected to a motor 7 driven by a motor driver 6 responsive to the output signal of an oscillator 5. The reflected light from the polygon mirror 4 is collimated by the collimating lens 3, passes through the first window 8 and the second window 9, is condensed by the condensing lens 10, and enters the photodetector 11. do. At this time, a part of the parallel beam is blocked by the measuring object I2 placed in the parallel beam moving area between the first and second windows 8 and 9, so an edge portion is generated in the output signal of the photodetector 11. .

このエツジ部はエツジ検出器13にて検出される。そし
てこのエツジ検出信号に基いたf−)信号がダート回路
14により形成され、カウンタ15に与えられる。カウ
ンタz5はそのダート時間に対応する期間中に発振器5
から到来するパルス列を計数し、これをディジタル表示
器Z6に供給する。かくして測定物Z2の外径が表示さ
れ、測定されることになる。
This edge portion is detected by an edge detector 13. An f-) signal based on this edge detection signal is generated by the dart circuit 14 and applied to the counter 15. Counter z5 detects oscillator 5 during the period corresponding to its dart time.
The pulse train arriving from the pulse train is counted and supplied to the digital display Z6. In this way, the outer diameter of the object Z2 is displayed and measured.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかるに上記従来のレーザ走査型外径測定器においては
、光学的に極めて高精度なボIJ コンミラー4を必要
とし、構成が複雑でコスト高となる上、ポリがンミラー
4を回転駆動するモータ7、ドライバ6等を必要とする
ので、極めて大型で重量の重いものとなるという問題が
あった。
However, the conventional laser scanning outer diameter measuring device described above requires an extremely high-precision optical IJ mirror 4, resulting in a complicated configuration and high cost. Since the driver 6 and the like are required, there is a problem that the device is extremely large and heavy.

そこで本発明は、構成が簡単で低コストで製作可能であ
る上、小型軽量なレーザ走査型外径測定器を提供するこ
とを目的とする。
SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a laser scanning type outer diameter measuring instrument that is simple in structure, can be manufactured at low cost, and is small and lightweight.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は上記問題点を解決し目的を達成するために、次
のような手段を講じたことを特徴としている。すなわち
、出射光の偏向機能を有する半導体レーザを設け、この
半導体レーザからの出射光を平行光束化するようにコリ
メートレンズを設け、このコリメートレンズにより平行
光束化された光を集光する如く集光レンズを設け、この
集光レンズにより集光された光を受光し前記コリメート
レンズと集光レンズとの間の平行光束移動領域内に置か
れた測定物の外径情報を検出する如く検出手段を設ける
In order to solve the above problems and achieve the objects, the present invention is characterized by taking the following measures. That is, a semiconductor laser having a function of deflecting emitted light is provided, a collimating lens is provided so as to convert the emitted light from the semiconductor laser into a parallel beam, and the collimating lens condenses the parallel beam. A lens is provided, and a detection means is configured to receive the light condensed by the condenser lens and detect information on the outer diameter of the object placed in the parallel beam movement area between the collimating lens and the condenser lens. establish.

〔作用〕[Effect]

光源として出射光を偏向させ得る機能をもった半導体レ
ーザを用いているので、メカニカルな回転式偏向機構で
あるポリゴンミラー等を用いずに外径測定することが可
能となる。
Since a semiconductor laser having the function of deflecting the emitted light is used as a light source, it is possible to measure the outer diameter without using a mechanical rotary deflection mechanism such as a polygon mirror.

〔実施例〕〔Example〕

第1図は本発明の第1の実施例ν全体的構成を示す図で
ある。第1図において20は出射光を偏向させ得る機能
をもった半導体レーザ即ちビームスキャニングレーザ(
以下BSLと略称スる)である。このBSL 20から
の出射光はコリメートレンズ3により平行光束化され、
集光レンズ10により集光されて光検出器z1に入射す
る。BSL 20の出射光が矢印X方向に偏向制御され
ると、レンズ3.10間の平行光束は矢印Y方向に平行
移動し、集光レンズ10を通過後の光は矢印2方向に移
動する。したがってコリメートレンズ3と集光レンズ1
0との間の平行光束移動領域内に、例えばファイバー、
電線、ケーブルなどの測定物I2を置き、この測定物1
2による遮光時間を光検出器以下の計測系にて計測する
ことにより、その外径を測定することができる。ただし
平行光束が一定速度で移動するようにBSL 20のビ
ームスキャニング速度を制御する必要がある。そこで以
下BSL 20について説明する。
FIG. 1 is a diagram showing the overall configuration of a first embodiment ν of the present invention. In FIG. 1, 20 is a semiconductor laser that has the function of deflecting emitted light, that is, a beam scanning laser (
(hereinafter abbreviated as BSL). The light emitted from this BSL 20 is converted into a parallel beam by the collimating lens 3,
The light is condensed by the condenser lens 10 and enters the photodetector z1. When the emitted light from the BSL 20 is deflected and controlled in the direction of the arrow X, the parallel light beam between the lenses 3 and 10 moves in parallel in the direction of the arrow Y, and the light after passing through the condenser lens 10 moves in the direction of the arrow 2. Therefore, collimating lens 3 and condensing lens 1
For example, a fiber,
Place the measurement object I2 such as an electric wire or cable, and
By measuring the light blocking time due to No. 2 using a measurement system below the photodetector, its outer diameter can be measured. However, it is necessary to control the beam scanning speed of the BSL 20 so that the parallel light beam moves at a constant speed. Therefore, the BSL 20 will be explained below.

半導体レーザ夜は、一般にその導波機構に応じて、屈折
率導波型と利得導波型との二つに分けられる。前者は、
半導体レーザの活性層の接合面に対し、垂直方向および
平行方向ともに屈折率によって光が導波される機構をも
ったものであるのに対し、稜者は活性層に注入されるキ
ャリア密度に依存する利得の高いところに沿って光が導
波されるという性質に基いた機構を有するものである。
Semiconductor lasers are generally divided into two types depending on their waveguide mechanism: index-guided type and gain-guided type. The former is
The semiconductor laser has a mechanism in which light is guided by the refractive index in both the perpendicular and parallel directions to the junction surface of the active layer, whereas the ridge waveguide depends on the carrier density injected into the active layer. This mechanism is based on the property that light is guided along areas where the gain is high.

BSL 20は、この利得導波機構を積極的に活用した
ものである。すなわち、通常の利得導波型半導体レーザ
の活性層内の利得分布は、活性層上に電流注入電極が一
様に形成されているので、活性層中心に対して対称に分
布する。一方、BSL 20の場合には、活性層上に2
つに分割した電極が形成されておシ、しかもこの一対の
電極には独立に電流を注入することができるので、活性
層内の利得分布を非対称にすることができる。
The BSL 20 actively utilizes this gain waveguide mechanism. That is, the gain distribution in the active layer of a typical gain waveguide semiconductor laser is symmetrical with respect to the center of the active layer because the current injection electrode is uniformly formed on the active layer. On the other hand, in the case of BSL 20, 2
Since divided electrodes are formed and current can be independently injected into this pair of electrodes, the gain distribution in the active layer can be made asymmetric.

第2図はBSL 20の構造例を示す斜視図であシ、文
献r D、 R,5cifrea Appl Phys
 Lett 33(8)、702.1978Jに示され
ているものである。
Figure 2 is a perspective view showing an example of the structure of BSL 20.
Lett 33(8), 702.1978J.

第2図に示すようにn型GaA1基板21上に、n型G
a 0.5 AtO,5Asクラッド層22、p型Ga
O,95AL O,05Am活性層23、p型Ga O
,5A/=0.5Asり5ラド層24及びn型GaAs
キaryプ二分割された電極27h 、27bが設けで
ある。
As shown in FIG. 2, an n-type G
a 0.5 AtO, 5As cladding layer 22, p-type Ga
O,95AL O,05Am active layer 23, p-type GaO
, 5A/=0.5As 5 Rad layer 24 and n-type GaAs
Two electrodes 27h and 27b are provided.

すなわちこの電極27a 、27bは、電極分割部分2
8において分離されておシ、一対のIJ−ド線29*、
29bを介してそれぞれ独立に電流11+1.を注入可
能になっている。また前記キャッゾ層25の電極27*
 、27bと接している部分には、それぞれZn拡散領
域30h 。
In other words, these electrodes 27a and 27b are connected to the electrode divided portion 2.
8, a pair of IJ-do wires 29*,
The currents 11+1 . can be injected. Further, the electrode 27* of the casso layer 25
, 27b are each provided with a Zn diffusion region 30h.

30bが設けてあシ、電極27a、27bから注入され
る電流励起領域を制限するようになっている。
A reed 30b is provided to limit the current excitation region injected from the electrodes 27a and 27b.

活性層237の活性領域3ノにおける非対称利)得分布
は、上述した注入電流工1112の比を−変えることに
より行う。
The asymmetric gain distribution in the active region 3 of the active layer 237 is achieved by changing the ratio of the injection current factor 1112 described above.

すなわち、注入電流を非対称(Il−II−I2 )に
すると、活性層23内忙注入されるキャリアの密度は注
入電流の大きい電極側が高くなる。
That is, when the injection current is made asymmetric (Il-II-I2), the density of carriers injected into the active layer 23 becomes higher on the electrode side where the injection current is larger.

例えばr、)r、の場合には、電極27a側からキャリ
アが多く注入され、活性領域31内での利得はIl側が
高くなる。従って、利得分布のピークが271L側に偏
った第3図(、)に示すような分布を示す。逆にIf<
Il とすると、活性領域31内での利得は工2側が高
くなシ、利得分布のピークが27b側に偏った第3図(
b)に示すような分布を示す。第3図(a) 、 (b
)に示す利得分布を形成した場合の活性層23の光モー
ドの波面の位相は、第4図(a) 、 (b)に示すよ
うに傾斜した波面となることがわかる。波面の傾斜のと
平行な方向を示す。
For example, in the case of r, )r, more carriers are injected from the electrode 27a side, and the gain in the active region 31 is higher on the Il side. Therefore, the peak of the gain distribution is biased toward the 271L side, as shown in FIG. 3 (,). On the contrary, If<
Il, the gain in the active region 31 is higher on the side 27b, and the peak of the gain distribution is biased toward the side 27b as shown in FIG.
The distribution shown in b) is shown. Figure 3 (a), (b
It can be seen that when the gain distribution shown in ) is formed, the wavefront phase of the optical mode of the active layer 23 becomes a tilted wavefront as shown in FIGS. 4(a) and 4(b). Indicates the direction parallel to the slope of the wavefront.

レーザ出射光の方向は、活性層23内の光のして所定角
度偏向された方向にピークを有している。
The direction of the laser emitted light has a peak in the direction in which the light within the active layer 23 is deflected by a predetermined angle.

この出射光ピーク位置は、活性層23への注BSLll
の光源としての動作の特徴は、第6図(、)に示すよう
に、出射光の強度分布のピークpを注入電流比II/I
2の可変操作により矢印で示すように連続的に偏向させ
ることができる点である。
This emitted light peak position is the peak position of the output light to the active layer 23.
The characteristics of the operation as a light source are as shown in FIG.
The point is that it can be continuously deflected as shown by the arrow by variable operation No. 2.

従って、第6図(b) K示すように、BSI、 20
りi4の出射端面をレンズの焦点(fは焦点距離)上に
置くことにより、レーザビームの矢印Xの゛ようなヒー
ム偏向動作に応じて、レンズ3通過後の平行光束を矢印
Yのように平行移動することが可能になる。
Therefore, as shown in FIG. 6(b), BSI, 20
By placing the output end face of i4 on the focal point of the lens (f is the focal length), the parallel light flux after passing through the lens 3 is deflected as shown by the arrow Y in response to the beam deflection operation of the laser beam as shown by the arrow X. It becomes possible to move in parallel.

つ1シ、BSL 20とコリメートレンズ3との組合わ
せにより、光源であるBSL 20のビームスキャニン
グ動作を行なうのみで、ポリコ9ノミラーなどのメカニ
カルな回転式偏向機構を用いずに平行光束の平行移動を
容易かつ精度よく行なえる。
First, by combining the BSL 20 and the collimating lens 3, the beam scanning operation of the BSL 20, which is a light source, is performed, and the parallel beam can be moved in parallel without using a mechanical rotary deflection mechanism such as a polyco-9 mirror. can be performed easily and accurately.

第7図は本発明の第2の実施例の主要部を示す図である
。この実施例が前記第1の実施例と異なる点は、コリメ
ートレンズ3と集光レンズ10との間の平行光束移動領
域内に、偏向方向を同一方向に揃えた一対の偏向板41
.42を挿入した点である。すなわち半導体レーザの発
振モードはTEモードであり、接合面に平行な方向に電
界が振動するので、偏向板41.42の偏向方向を半導
体レーザすなわちBSL 20の接合方向に揃えて設置
する。
FIG. 7 is a diagram showing the main parts of a second embodiment of the present invention. The difference between this embodiment and the first embodiment is that a pair of deflection plates 41 whose deflection directions are aligned in the same direction are provided in the parallel beam movement region between the collimating lens 3 and the condenser lens 10.
.. This is the point where 42 was inserted. That is, the oscillation mode of the semiconductor laser is the TE mode, and the electric field oscillates in a direction parallel to the bonding surface, so the deflection directions of the deflection plates 41 and 42 are aligned with the bonding direction of the semiconductor laser, that is, the BSL 20.

このように構成された第2の実施例によれば、測定物1
20表面での反射に起因する偏向方向の回転による誤差
を除去することができる。その結果、光検出感度を高め
得る利点がある。
According to the second embodiment configured in this way, the measurement object 1
Errors due to rotation of the deflection direction caused by reflection on the 20 surface can be removed. As a result, there is an advantage that the photodetection sensitivity can be increased.

第8図は本発明の第3の実施例の主要部を示す図である
。この実施例が前記第1の実施例と異なる点は、光検出
器として測定物I2の投影像を受光検出可能な二次元ア
レイ状の光検出器43を用いた点である。すなわちこの
実施例は、測定物12によって生じた影を、二次元アレ
イ状の光検出器43上に投影し、その投影像の長さから
直接的に測定物の12の外径を測定するようにした例で
ある。
FIG. 8 is a diagram showing the main parts of a third embodiment of the present invention. This embodiment differs from the first embodiment in that a two-dimensional array photodetector 43 capable of receiving and detecting a projected image of the measurement object I2 is used as a photodetector. That is, in this embodiment, the shadow caused by the object 12 to be measured is projected onto the two-dimensional array photodetector 43, and the outer diameter of the object 12 to be measured is directly measured from the length of the projected image. This is an example.

この第3の実施例によれば、計測系の信号処理回路の構
成が簡略化する利点がある。
According to this third embodiment, there is an advantage that the configuration of the signal processing circuit of the measurement system is simplified.

なお本発明は前記各実施例に限定されるものではない。Note that the present invention is not limited to the above embodiments.

例えばBSL 20とコリメートレンズ3との間に、B
SL 20の出射光を真円化するための整形フプリズム
などを挿入するようにしてもよい。このほか本発明の要
旨を逸脱しない範囲で種々変形実施可能であるのは勿論
である。
For example, between the BSL 20 and the collimating lens 3,
A shaping prism or the like may be inserted to make the light emitted from the SL 20 into a perfect circle. It goes without saying that various other modifications can be made without departing from the gist of the present invention.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、光源として出射光を偏向させ得る機能
をもった半導体レーザを用いているので、メカニカルな
回転式偏向機洛であるポリゴンミラー等を用いずに外径
測定することが可能となる。その結果、構成が簡単で低
コストで製作可能である上、小型@量なレーザ走査型外
径測定器を提供できる。
According to the present invention, since a semiconductor laser having the function of deflecting the emitted light is used as a light source, it is possible to measure the outer diameter without using a mechanical rotary deflection device such as a polygon mirror. Become. As a result, it is possible to provide a laser scanning type outer diameter measuring instrument that has a simple configuration, can be manufactured at low cost, and is small in size.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の第1の実施例の全体的檜成を示す図、
閉2図は同実施例のBSLを示す斜視図、第3図(a)
 、 (b) 〜第5図(a) 、 (b)は同BSL
、の特性を示す図、第6図(a) 、 (b)は同BS
Lの作用を示す図、第7図は本発明の第2の実施例の主
要部を示す図、第8図は本発明の第3の実施例の主要部
を示す図である。第9図は従来例の構成を示す図である
。 3・・・コリメートレンズ、10・・・集光レンズ、I
I・・・光検出器、20・・・BSL (ビームスキャ
ニングレーザ)。 出ト人代理人  弁理士 坪 井   浮筒1図 第2因 (a )             (b )第3図 第4図 第6図 第8図 第9図
FIG. 1 is a diagram showing the overall structure of the first embodiment of the present invention;
Figure 2 is a perspective view showing the BSL of the same embodiment, Figure 3 (a)
, (b) to Figure 5 (a) and (b) are the same BSL
Figures 6(a) and (b) show the characteristics of the same BS.
FIG. 7 is a diagram showing the main part of the second embodiment of the present invention, and FIG. 8 is a diagram showing the main part of the third embodiment of the invention. FIG. 9 is a diagram showing the configuration of a conventional example. 3... Collimating lens, 10... Condensing lens, I
I... Photodetector, 20... BSL (beam scanning laser). Patent Attorney Tsuboi Figure 1 Cause 2 (a) (b) Figure 3 Figure 4 Figure 6 Figure 8 Figure 9

Claims (3)

【特許請求の範囲】[Claims] (1)出射光の偏光機能を有する半導体レーザと、この
半導体レーザからの出射光を平行光束化するように設け
られたコリメートレンズと、このコリメートレンズによ
り平行光束化された光を集光する集光レンズと、この集
光レンズにより集光された光を受光し前記コリメートレ
ンズと集光レンズとの間の平行光束移動領域内に置かれ
た測定物の外径情報を検出する検出手段とを具備したこ
とを特徴とするレーザ走査型外径測定器。
(1) A semiconductor laser having a polarizing function for emitted light, a collimating lens provided to collimate the emitted light from the semiconductor laser, and a condenser that condenses the collimated light by the collimating lens. an optical lens; and a detection means for receiving the light condensed by the condensing lens and detecting information on the outer diameter of the object placed in a parallel beam movement area between the collimating lens and the condensing lens. A laser scanning type outer diameter measuring instrument characterized by:
(2)コリメートレンズと集光レンズとの間の平行光束
移動領域は、偏向方向の異なる光を除去する偏向板を備
えたものであることを特徴とする特許請求の範囲第1項
記載のレーザ走査型外径測定器。
(2) The laser according to claim 1, wherein the parallel beam movement region between the collimating lens and the condensing lens is provided with a deflection plate that removes light having different polarization directions. Scanning type outer diameter measuring device.
(3)検出手段は、測定物の投影像を受光する二次元ア
レイ状の光検出器であることを特徴とする特許請求の範
囲第1項記載のレーザ走査型外径測定器。
(3) The laser scanning type outer diameter measuring instrument according to claim 1, wherein the detection means is a two-dimensional array-shaped photodetector that receives a projected image of the object to be measured.
JP17533485A 1985-08-09 1985-08-09 Laser scanning type outer diameter measuring instrument Pending JPS6235211A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17533485A JPS6235211A (en) 1985-08-09 1985-08-09 Laser scanning type outer diameter measuring instrument

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17533485A JPS6235211A (en) 1985-08-09 1985-08-09 Laser scanning type outer diameter measuring instrument

Publications (1)

Publication Number Publication Date
JPS6235211A true JPS6235211A (en) 1987-02-16

Family

ID=15994252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17533485A Pending JPS6235211A (en) 1985-08-09 1985-08-09 Laser scanning type outer diameter measuring instrument

Country Status (1)

Country Link
JP (1) JPS6235211A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0328703A (en) * 1989-06-26 1991-02-06 Power Reactor & Nuclear Fuel Dev Corp Method for inspecting fuel assembly
JP2003066012A (en) * 2001-08-30 2003-03-05 Idemitsu Eng Co Ltd Method and device for inspecting defect by surface wave
CN102087100A (en) * 2010-11-23 2011-06-08 东莞市日新传导科技股份有限公司 FPGA (Field Programmable Gate Array) based laser diameter measuring method
CN110836693A (en) * 2019-11-19 2020-02-25 中国科学院合肥物质科学研究院 Method and device for measuring size and injection frequency of impurity shot
CN112781488A (en) * 2019-11-11 2021-05-11 中国计量大学 Workpiece size measuring device based on linear array CCD

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0328703A (en) * 1989-06-26 1991-02-06 Power Reactor & Nuclear Fuel Dev Corp Method for inspecting fuel assembly
JP2003066012A (en) * 2001-08-30 2003-03-05 Idemitsu Eng Co Ltd Method and device for inspecting defect by surface wave
CN102087100A (en) * 2010-11-23 2011-06-08 东莞市日新传导科技股份有限公司 FPGA (Field Programmable Gate Array) based laser diameter measuring method
CN112781488A (en) * 2019-11-11 2021-05-11 中国计量大学 Workpiece size measuring device based on linear array CCD
CN110836693A (en) * 2019-11-19 2020-02-25 中国科学院合肥物质科学研究院 Method and device for measuring size and injection frequency of impurity shot

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