JPS6236456A - Semiconductor element sealing resin - Google Patents
Semiconductor element sealing resinInfo
- Publication number
- JPS6236456A JPS6236456A JP60176350A JP17635085A JPS6236456A JP S6236456 A JPS6236456 A JP S6236456A JP 60176350 A JP60176350 A JP 60176350A JP 17635085 A JP17635085 A JP 17635085A JP S6236456 A JPS6236456 A JP S6236456A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- filler
- semiconductor element
- thermal expansion
- sealing resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
- H10W74/473—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins containing a filler
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、充填剤に熱膨張が負の温度係数を有する微
粒を混合し、封止樹脂の総合的な熱膨張を半導体素子の
それに極めて近似させた半導体素子用封止樹脂に関する
ものである。[Detailed Description of the Invention] [Field of Industrial Application] This invention mixes fine particles whose thermal expansion has a negative temperature coefficient with a filler, and makes the overall thermal expansion of the sealing resin extremely comparable to that of a semiconductor element. The present invention relates to an approximated sealing resin for semiconductor elements.
従来、半導体素子を低圧トランスファー成形法により樹
脂封止する場合において、無機材料からなる半導体素子
及びリードフレームと、有機樹脂との間の熱膨張係数の
差が大きいため、温度変化によりひずみを生じて応力が
発生し、封止素子の信頼性を低下させるばかりでな（、
甚だしい場合にはクランクを生じ、製造歩留りの低下を
来していた。特に、エポキシ系樹脂では、通常１５０〜
１９０℃の範囲の温度で成形を行うため、成形後常温ま
で放冷させる間に、半導体素子に比べて熱、膨張係数の
大きい樹脂が相対的に熱収縮を起し、その結果、この樹
脂で封止された半導体素子は応力ひずみを生じる。この
ような応力ひずみは、半導体素子の特性や信頼性を低下
させるばかりでなく、割れφクラックを生じる場合もあ
った。Conventionally, when semiconductor elements are encapsulated with resin using low-pressure transfer molding, there is a large difference in thermal expansion coefficient between the semiconductor elements and lead frames made of inorganic materials and the organic resin, which causes distortion due to temperature changes. Stress is generated, which not only reduces the reliability of the sealing element (,
In severe cases, cranking occurs, resulting in a decrease in manufacturing yield. In particular, for epoxy resins, it is usually 150~
Because molding is carried out at a temperature in the range of 190°C, the resin, which has a higher coefficient of thermal expansion than the semiconductor element, undergoes relative thermal contraction during cooling to room temperature after molding, and as a result, this resin A encapsulated semiconductor device experiences stress strain. Such stress strain not only deteriorates the characteristics and reliability of the semiconductor element, but also sometimes causes cracks.
（発明が解決しようとする問題点〕
そして従来の半導体素子用封止樹脂には、この応力ひず
みを減少させるために、適当な無機質充填剤が加えられ
てきた。無機質充填剤を添加すると、封止樹脂の熱膨張
係数がその添加量に比例して低下し、半導体素子に近づ
くという利点があった。(Problem to be solved by the invention) In order to reduce this stress strain, an appropriate inorganic filler has been added to the conventional encapsulating resin for semiconductor devices. There was an advantage that the coefficient of thermal expansion of the stopper resin decreased in proportion to the amount added and approached that of the semiconductor element.
しかしその反面、有機質樹脂の間に無機質充填剤が混入
されるため、有機質樹脂と無機質充填剤という２種類の
異質物質間の界面を生じ、この界面を通じて水分が侵入
し、不良発生の原因となっていた。However, on the other hand, since the inorganic filler is mixed between the organic resins, an interface between two different materials, the organic resin and the inorganic filler, is created, and moisture can enter through this interface, causing defects. was.
一方、半導体素子の高密度化、高集積化が進むにつれて
、α線によるソフトエラーが問題になってきた。これは
、半導体素子用材料中に含まれているα線及び宇宙線に
含まれているα線によって、メモリー機能を有する半導
体素子のメモリーの反転が起る現象であり、この誤動作
の発生を防ぐためα線含有量の少ない封止用材料が求め
られるようになってきた。無機質充填剤は有機樹脂に比
べてトリウム、ウランなどのα線源となる物質の含有量
が多いことが知られており、その改善が急務となってき
た。On the other hand, as semiconductor devices become denser and more highly integrated, soft errors caused by alpha rays have become a problem. This is a phenomenon in which the memory of a semiconductor element with a memory function is reversed due to alpha rays contained in semiconductor element materials and alpha rays contained in cosmic rays, and this malfunction can be prevented. Therefore, there has been a demand for sealing materials with low α-ray content. It is known that inorganic fillers contain higher amounts of alpha ray sources, such as thorium and uranium, than organic resins, and there is an urgent need to improve this.
この発明は上記のような問題点を解消するためになされ
たもので、応力ひずみを低減でき、かつ水分の侵入によ
る不良の発生がなく、α線含有量も少ない半導体素子用
封止樹脂を提供することを目的とする。This invention was made to solve the above-mentioned problems, and provides a sealing resin for semiconductor elements that can reduce stress and strain, does not cause defects due to moisture intrusion, and has a low α-ray content. The purpose is to
この発明に係る半導体素子用封止樹脂は、従来使用され
てきた熱膨張係数の小さな無機質充填剤の代わりに、常
温からガラス転移温度の温度域において熱膨張係数が負
の有機高分子を充填剤に用いたものである。The encapsulating resin for semiconductor devices according to the present invention uses an organic polymer filler with a negative coefficient of thermal expansion in the temperature range from room temperature to the glass transition temperature, instead of the conventionally used inorganic filler with a small coefficient of thermal expansion. This is what was used for.
この発明においては、熱膨張係数が負である有機高分子
の充填剤は、α線含有量が少ないためα粒子によるソフ
トエラーを著しく減少でき、しかも、有機樹脂とその本
質において類似の物質であるので、両者の界面を通じて
の水分の侵入を著しく減少できる。In this invention, the organic polymer filler with a negative coefficient of thermal expansion can significantly reduce soft errors caused by alpha particles due to its low alpha ray content, and is a material similar in nature to the organic resin. Therefore, the intrusion of moisture through the interface between the two can be significantly reduced.
以下、この発明の一実施例について説明する。 An embodiment of the present invention will be described below.
図面は本発明の一実施例による半導体素子用封止樹脂を
用いた半導体装置を示し、図において１は半導体素子用
封止樹脂、２はリード、３は半導体素子、４は上記リー
ド２と半導体素子３とを接続する金ワイヤ、１１は上記
樹脂１中に添加された常温からガラス転移点温度１５０
℃〜１８０℃の温度域において熱膨張係数が負である有
機高分子の充填剤である。この充填剤にはポリイミド樹
脂（例えばデュポン社製２５６０）が耐熱性の点からも
有効であるが、これに限定されるものではなく、その特
徴は上記温度域において熱膨張係数が負である点にある
。また、本実施例樹脂に用いる有機充填剤１１は、あら
かじめ重合、粉砕して作ることができるので、低圧トラ
ンスファー成形法には通常適用できないような特性を持
つ樹脂や高温・長時間硬化を要する樹脂なども使用でき
る。The drawing shows a semiconductor device using a sealing resin for semiconductor elements according to an embodiment of the present invention, in which 1 is the sealing resin for semiconductor elements, 2 is a lead, 3 is a semiconductor element, and 4 is the lead 2 and the semiconductor. The gold wire 11 connecting to the element 3 is a gold wire with a glass transition point temperature of 150 from normal temperature added to the resin 1.
It is an organic polymer filler that has a negative coefficient of thermal expansion in the temperature range of 180°C to 180°C. For this filler, polyimide resin (for example, DuPont 2560) is effective from the viewpoint of heat resistance, but it is not limited to this, and its characteristic is that the coefficient of thermal expansion is negative in the above temperature range. It is in. In addition, since the organic filler 11 used in the resin of this example can be made by polymerizing and pulverizing in advance, it can be used for resins that have characteristics that cannot normally be applied to low-pressure transfer molding methods or for resins that require high temperature and long-time curing. etc. can also be used.
次に作用効果について述べる。Next, we will discuss the effects.
半導体素子３を低圧トランスファー成形法によ０℃〜１
８０℃で凝固収縮し始めるが、このとき該樹脂１中に分
散している充填剤１１はこの温度でば負の熱膨張係数を
有するため熱膨張して上記樹脂１の凝固収縮を緩和し、
その結果応力ひずみのない樹脂封止半導体装置を製造で
きる。Semiconductor element 3 is heated to 0°C to 1°C by low pressure transfer molding method.
At 80° C., the filler 11 starts to solidify and shrink, but at this time, the filler 11 dispersed in the resin 1 has a negative coefficient of thermal expansion at this temperature, so it thermally expands and alleviates the solidification and shrinkage of the resin 1.
As a result, a resin-sealed semiconductor device free from stress and strain can be manufactured.
そしてこのような本実施例樹脂においては、有機充填剤
１１はトリウムやウランなどのα線源となる物質の含有
量が無機質充填剤に比べて少なく、α粒子が原因となる
ソフトエラーを著しく減少させることができ、しかも、
母体をなす有機樹脂との間に界面を生じることがなく、
水分の侵入を防げる。また、この充填剤の配合比を適当
に選定することにより、封止樹脂と半導体素子がほぼ同
一の熱膨張係数を有し、応力ひずみによる信頼性の低下
や、割れやクランクの発生を著しく減少させることがで
き、きわめて信頼性の高い半導体装置を得ることができ
る。In the resin of this example, the organic filler 11 has a lower content of α-ray source substances such as thorium and uranium than the inorganic filler, which significantly reduces soft errors caused by α particles. and, moreover,
There is no interface between it and the base organic resin.
Prevents moisture from entering. In addition, by appropriately selecting the blending ratio of this filler, the sealing resin and the semiconductor element have almost the same coefficient of thermal expansion, which significantly reduces reliability loss due to stress strain and the occurrence of cracks and cracks. Therefore, an extremely reliable semiconductor device can be obtained.
ｔ′
分子からなる充填剤を用いたので、封止樹脂の熱膨張を
シリコン等からなる半導体素子とほぼ一致させることが
でき、信頼性の極めて高い、安価な半導体装置が得られ
る効果がある。Since the filler made of t' molecules is used, the thermal expansion of the sealing resin can be made almost the same as that of the semiconductor element made of silicon or the like, which has the effect of providing an extremely reliable and inexpensive semiconductor device.
図面は本発明の一実施例による半導体素子用封止樹脂を
用いた半導体装置を示す断面図である。
１・・・封止樹脂、３・・・半導体素子、１１・・・充
填剤。The drawing is a sectional view showing a semiconductor device using a sealing resin for semiconductor elements according to an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Sealing resin, 3... Semiconductor element, 11... Filler.
Claims (1)
樹脂において、 常温からガラス転移温度の温度域において負の熱膨張係
数を有する有機高分子を充填剤として含有することを特
徴とする半導体素子用封止樹脂。(1) A semiconductor element encapsulating resin used for resin encapsulation of a semiconductor element, which contains an organic polymer having a negative coefficient of thermal expansion in the temperature range from room temperature to glass transition temperature as a filler. Encapsulation resin for elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60176350A JPS6236456A (en) | 1985-08-09 | 1985-08-09 | Semiconductor element sealing resin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60176350A JPS6236456A (en) | 1985-08-09 | 1985-08-09 | Semiconductor element sealing resin |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6236456A true JPS6236456A (en) | 1987-02-17 |
Family
ID=16012063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60176350A Pending JPS6236456A (en) | 1985-08-09 | 1985-08-09 | Semiconductor element sealing resin |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6236456A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104521140A (en) * | 2012-07-11 | 2015-04-15 | 天工松下滤波方案日本有限公司 | Electronic component |
-
1985
- 1985-08-09 JP JP60176350A patent/JPS6236456A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104521140A (en) * | 2012-07-11 | 2015-04-15 | 天工松下滤波方案日本有限公司 | Electronic component |
| US10084125B2 (en) | 2012-07-11 | 2018-09-25 | Skyworks Filter Solutions Japan Co., Ltd. | Electronic component |
| CN104521140B (en) * | 2012-07-11 | 2018-10-16 | 天工滤波方案日本有限公司 | Electronic component |
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