JPS6236603B2 - - Google Patents
Info
- Publication number
- JPS6236603B2 JPS6236603B2 JP8225681A JP8225681A JPS6236603B2 JP S6236603 B2 JPS6236603 B2 JP S6236603B2 JP 8225681 A JP8225681 A JP 8225681A JP 8225681 A JP8225681 A JP 8225681A JP S6236603 B2 JPS6236603 B2 JP S6236603B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- foil
- brazing material
- electrode film
- thick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 50
- 238000005219 brazing Methods 0.000 claims description 28
- 239000011888 foil Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 20
- 230000005496 eutectics Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 229910017944 Ag—Cu Inorganic materials 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- -1 or steatite Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】
本発明は薄膜サーミスタの電極構成に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrode configuration of a thin film thermistor.
薄膜サーミスタは第１図に示すように、通常、
絶縁基板１の一方の表面に感温抵抗体膜２と電極
膜３とを形成することにより構成されている。絶
縁基板１には、アルミナ、ムライト、ステアタイ
トなどのセラミツクあるいは硼硅酸系硝子、石英
などの硝子が用いられる。感温抵抗体膜２には、
Fe、Ni、Co、Mnなどの複合酸化膜、Si、Ge、
SiC膜などが用いられる。電極膜３には、Ag−
Pd、Au−Pt、Au、Pt、Agなどの厚膜電極膜あ
るいはCr、NiなどをアンダコートしたAg、Au、
Cuなどの薄膜電極膜が用いられる。 As shown in Figure 1, thin film thermistors are usually
It is constructed by forming a temperature sensitive resistor film 2 and an electrode film 3 on one surface of an insulating substrate 1. The insulating substrate 1 is made of ceramic such as alumina, mullite, or steatite, or glass such as borosilicate glass or quartz. The temperature sensitive resistor film 2 includes
Composite oxide films such as Fe, Ni, Co, Mn, Si, Ge,
A SiC film or the like is used. The electrode film 3 contains Ag-
Thick film electrode films such as Pd, Au-Pt, Au, Pt, Ag, or Ag, Au with undercoating of Cr, Ni, etc.
A thin electrode film such as Cu is used.
従来このような薄膜サーミスタの電極膜３にリ
ード線４を接続するとき、半田付法、溶接法、ロ
ウ付法が用いられてきた。しかし、半田寸法は耐
熱性が低いという欠点があつた。すなわち高々
180〜200℃の耐熱性しか得られなかつた。他方、
溶接法は、高耐熱性（400℃以上）が得られる
が、接続強度が低いという欠点があつた。すなわ
ち電極膜３は熱容量が小さいので、リード線４も
熱容量の小さな細線でなければ電極膜３に接接で
きず、この結果溶接面積も微少（0.2mm2以下）に
なり、従つて接続強度も10ｇ以下であつた。また
ロウ付法では、電極膜３がロウ付中に拡散し、リ
ード線４を接続できないという欠点があつた。 Conventionally, when connecting the lead wire 4 to the electrode film 3 of such a thin film thermistor, a soldering method, a welding method, or a brazing method has been used. However, the solder dimensions had a drawback of low heat resistance. i.e. at most
A heat resistance of only 180 to 200°C was obtained. On the other hand,
Although the welding method provides high heat resistance (over 400°C), it has the disadvantage of low connection strength. In other words, since the electrode film 3 has a small heat capacity, the lead wire 4 must be a thin wire with a small heat capacity in order to come into contact with the electrode film 3. As a result, the welding area becomes small (0.2 mm 2 or less) and the connection strength also decreases. It was less than 10g. Furthermore, the brazing method has the disadvantage that the electrode film 3 diffuses during brazing, making it impossible to connect the lead wire 4.
本発明はこれら従来の欠点を解消した電極構成
を提供するもので、その要旨は、絶縁基板の一方
の表面に感温抵抗体膜と電極膜とを形成して成る
薄膜サーミスタにおいて、前記電極膜にTi箔も
しくはZr箔をAg−Cu共晶ロウ材もしくは純Agロ
ウ材によりロウ付接続した点にある。 The present invention provides an electrode configuration that eliminates these conventional drawbacks.The gist of the present invention is to provide a thin film thermistor in which a temperature sensitive resistor film and an electrode film are formed on one surface of an insulating substrate. The point is that Ti foil or Zr foil is connected by brazing with Ag-Cu eutectic brazing material or pure Ag brazing material.
本発明の構成を第２図に示す。 The configuration of the present invention is shown in FIG.
以下、具体的実施例を示して本発明を詳述す
る。 Hereinafter, the present invention will be explained in detail by showing specific examples.
アルミナ基板１の一方の表面にAu−Pt厚膜電
極膜３を形成し、このAu−Pt厚膜電極膜３に少
なくとも一部が重なるようにSiC感温抵抗体膜２
を形成した。Au−Pt厚膜電極膜３の膜厚は約15
μｍ、SiC感温抵抗体膜２の膜厚は約２μｍであ
つた。こののち、上記Au−Pt厚膜電極膜３上に
Ag−Cu共晶ロウ材もしくは純Agロウ材５（約20
μｍ厚さ）とTi箔６（約100μｍ厚さ）とをこの
順序で積層し、真空中で最高温度約800℃で、２
〜３分間加熱した。冷却後、Ti箔６の接続強度
（アルミナ基板１に対して垂直方向）は500ｇ以
上、また接続面積は約２mm2（Au−Pt厚膜電極膜
３の面積とほぼ同じ面積）であつた。またTi箔
６をロウ付接続した薄膜サーミスタに空気中500
℃室温水中の熱衝撃を1000サイクル印加した後に
おいても接続強度は500ｇ以上を示した。更にTi
箔６に代えてZr箔を用いても同様の結果を得た。 An Au-Pt thick film electrode film 3 is formed on one surface of the alumina substrate 1, and a SiC temperature-sensitive resistor film 2 is formed so that at least a part thereof overlaps with this Au-Pt thick film electrode film 3.
was formed. The film thickness of the Au-Pt thick film electrode film 3 is approximately 15
The film thickness of the SiC temperature-sensitive resistor film 2 was approximately 2 μm. After this, on the Au-Pt thick film electrode film 3,
Ag-Cu eutectic brazing material or pure Ag brazing material 5 (approximately 20
μm thick) and Ti foil 6 (approximately 100 μm thick) were laminated in this order, and 2
Heat for ~3 minutes. After cooling, the connection strength of the Ti foil 6 (in the direction perpendicular to the alumina substrate 1) was 500 g or more, and the connection area was approximately 2 mm 2 (approximately the same area as the Au-Pt thick film electrode film 3). In addition, a thin film thermistor with Ti foil 6 connected with brazing
Even after applying 1000 cycles of thermal shock in room temperature water, the connection strength was 500 g or more. Furthermore, Ti
Similar results were obtained when Zr foil was used instead of foil 6.
すなわち、上記Au−Pt厚膜電極膜３上に純Ag
ロウ材５（約20μｍ厚）とZr箔（約100μｍ厚
さ）とをこの順序で積層し、窒素雰囲気で最高温
度約1000℃で２〜３分間加熱した。そして冷却し
た後、Zr箔の接続強度を調べたところ、Zr箔の接
続強度は、初期的にも、また上記と同様な熱衝撃
後も、Ti箔を同様、500ｇ以上を示した。 That is, pure Ag is deposited on the Au-Pt thick film electrode film 3.
Brazing material 5 (about 20 μm thick) and Zr foil (about 100 μm thick) were laminated in this order and heated in a nitrogen atmosphere at a maximum temperature of about 1000° C. for 2 to 3 minutes. After cooling, the connection strength of the Zr foil was examined, and it was found that the connection strength of the Zr foil was 500 g or more, both initially and after the same thermal shock as that of the Ti foil.
このように本発明の電極構成は耐熱性に優れる
と共に接続強度も実用上充分な強度を有すること
は明らかである。なお、リード線４はTi箔もし
くはZr箔６とロウ付法、溶接法により容易に接続
できる。 As described above, it is clear that the electrode structure of the present invention has excellent heat resistance and connection strength that is sufficient for practical use. Note that the lead wire 4 can be easily connected to the Ti foil or Zr foil 6 by brazing or welding.
通常、Au−Pt厚膜電極膜３にAg−Cu共晶ロウ
材もしくは純Agロウ材５をロウ付したとき、Au
−Pt厚膜電極膜３はAg−Cu共晶ロウ材もしくは
純Agロウ材５中に殆んど全量拡散し、Au−Pt厚
膜電極膜３が消滅し、リード線４を接続できな
い。しかし、本発明に示した通り、Ti箔もしく
はZr箔はAu−Pt厚膜電極膜３とロウ付接続でき
る。前述の如きロウ付作業時（真空中で最高温度
約800℃、２〜３分間加熱保持）に、Ti原子がAu
−Pt厚膜電極膜３およびAg−Cu共晶ロウ材もし
くは純Agロウ材５（またはAu−Pt厚膜電極膜３
とAg−Cu共晶ロウ材もしくは純Agロウ材５とが
相互に拡散し合つた層）を通つて拡散し、アルミ
ナ基板１の表面に到達し、そこで化学的結合力を
生じると考えられる。実際、ロウ付接続部の断面
に沿つてＸ線マイクアナライダーで組成分析した
ところ、アルミナ基板１の表面層約１μｍにわた
りTi原子が検出された。 Normally, when the Au-Pt thick film electrode film 3 is brazed with Ag-Cu eutectic brazing material or pure Ag brazing material 5, the Au
-Pt thick film electrode film 3 is almost entirely diffused into Ag--Cu eutectic brazing material or pure Ag brazing material 5, Au--Pt thick film electrode film 3 disappears, and lead wire 4 cannot be connected. However, as shown in the present invention, the Ti foil or the Zr foil can be connected to the Au-Pt thick film electrode film 3 by brazing. During the brazing work as described above (heating is maintained in vacuum at a maximum temperature of approximately 800°C for 2 to 3 minutes), Ti atoms become Au.
- Pt thick film electrode film 3 and Ag-Cu eutectic brazing material or pure Ag brazing material 5 (or Au-Pt thick film electrode film 3
It is thought that the alumina and the Ag--Cu eutectic brazing material or the pure Ag brazing material 5 diffuse through a mutually diffused layer), reach the surface of the alumina substrate 1, and generate chemical bonding force there. In fact, when the composition was analyzed using an X-ray microphone analyzer along the cross section of the soldered joint, Ti atoms were detected over about 1 μm of the surface layer of the alumina substrate 1.
なお、感温抵抗体膜２の耐熱性は通常1000℃以
下であること、およびTi箔、Zr箔は酸化され易
いので、ロウ材は真空中（もしくは不活性雰囲気
中）でなされるが、このときロウ材の組成変化が
生じ難いことなどの理由により、ロウ材はAg−
Cu共晶ロウ材（融点約790℃）、純Agロウ材（融
点約960℃）を用いた。 Note that the heat resistance of the temperature-sensitive resistor film 2 is usually 1000°C or less, and since Ti foil and Zr foil are easily oxidized, the brazing material is soldered in a vacuum (or in an inert atmosphere). Ag-
Cu eutectic brazing material (melting point approximately 790°C) and pure Ag brazing material (melting point approximately 960°C) were used.
以上のように本発明によれば、耐熱性に優れ、
しかも充分な強度でリード線を接続することが可
能な電極を備えたサーミスタが得られる。 As described above, according to the present invention, it has excellent heat resistance,
Furthermore, a thermistor can be obtained that includes electrodes to which lead wires can be connected with sufficient strength.
第１図は従来の薄膜サーミスタの構成を示す断
面図、第２図は本発明の薄膜サーミスタの構成を
示す断面図である。
１……絶縁基板、２……SiC感温抵抗体膜、３
……Au−Pt厚膜電極膜、４……リード線、５…
…Ag−Cu共晶ロウ材もしくは純Agロウ材、６…
…Ti箔。
FIG. 1 is a sectional view showing the structure of a conventional thin film thermistor, and FIG. 2 is a sectional view showing the structure of the thin film thermistor of the present invention. 1... Insulating substrate, 2... SiC temperature sensitive resistor film, 3
...Au-Pt thick film electrode film, 4...Lead wire, 5...
...Ag-Cu eutectic brazing material or pure Ag brazing material, 6...
...Ti foil.
Claims (1)
して成る薄膜サーミスタにおいて、前記電極膜に
Ti箔もしくはZr箔をAg−Cu共晶ロウ材もしくは
純Agロウ材によりロウ付接続したことを特徴と
する薄膜サーミスタ。1. In a thin film thermistor comprising a temperature sensitive resistor film and an electrode film formed on an insulating substrate, the electrode film has a
A thin film thermistor characterized in that Ti foil or Zr foil is brazed and connected with Ag-Cu eutectic brazing material or pure Ag brazing material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56082256A JPS57196501A (en) | 1981-05-28 | 1981-05-28 | Thin film thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56082256A JPS57196501A (en) | 1981-05-28 | 1981-05-28 | Thin film thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57196501A JPS57196501A (en) | 1982-12-02 |
| JPS6236603B2 true JPS6236603B2 (en) | 1987-08-07 |
Family
ID=13769360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56082256A Granted JPS57196501A (en) | 1981-05-28 | 1981-05-28 | Thin film thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57196501A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62143719U (en) * | 1986-03-07 | 1987-09-10 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63265403A (en) * | 1987-04-23 | 1988-11-01 | Matsushita Electric Ind Co Ltd | thin film thermistor |
-
1981
- 1981-05-28 JP JP56082256A patent/JPS57196501A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62143719U (en) * | 1986-03-07 | 1987-09-10 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57196501A (en) | 1982-12-02 |
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