JPS6237079U - - Google Patents

Info

Publication number
JPS6237079U
JPS6237079U JP1985129318U JP12931885U JPS6237079U JP S6237079 U JPS6237079 U JP S6237079U JP 1985129318 U JP1985129318 U JP 1985129318U JP 12931885 U JP12931885 U JP 12931885U JP S6237079 U JPS6237079 U JP S6237079U
Authority
JP
Japan
Prior art keywords
molecular beam
shutter
shutter plate
cell
crystal growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1985129318U
Other languages
Japanese (ja)
Other versions
JPH033580Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985129318U priority Critical patent/JPH033580Y2/ja
Publication of JPS6237079U publication Critical patent/JPS6237079U/ja
Application granted granted Critical
Publication of JPH033580Y2 publication Critical patent/JPH033580Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、この考案の実施例であるシヤツタ板
の平面図、第２図、第３図は、第１図の―線
における断面正面図、第４図は、同シヤツタ板の
使用状態を説明する縦断面図、第５図は、分子線
エピタキシー装置の成長室内の構成説明図、第６
図は、従来のシヤツタ板の使用状態を説明する縦
断面図、第７図、第８図は、同シヤツタ板による
セルの開口部の開閉状態を説明する図、第９図は
、同シヤツタ板の使用状態を説明する縦断面図で
ある。 １―結晶成長室、３―セル、４―蒸発物質、７
―シヤツタ板、９―突起。 Fig. 1 is a plan view of a shutter plate that is an embodiment of this invention, Figs. 2 and 3 are cross-sectional front views taken along the line - - in Fig. 1, and Fig. 4 shows the state in which the shutter plate is used. FIG. 5 is a vertical cross-sectional view to be explained, and FIG.
The figure is a vertical cross-sectional view explaining how the conventional shutter plate is used, Figures 7 and 8 are diagrams explaining how the cell opening is opened and closed by the shutter plate, and Figure 9 is a longitudinal cross-sectional view of the conventional shutter plate. FIG. 1-Crystal growth chamber, 3-Cell, 4-Evaporation substance, 7
- Shutter board, 9 - protrusion.

Claims (1)

【実用新案登録請求の範囲】 分子線エピタキシー装置の結晶成長室内で、蒸
発物質の分子線を制御するためにセルの開口部に
配置されたシヤツタ板において、 平坦な板に適宜畝状の突起を形成したことを特
徴とするシヤツタ板。[Claim for Utility Model Registration] In the crystal growth chamber of a molecular beam epitaxy device, in a shutter plate placed at the opening of a cell in order to control the molecular beam of an evaporated substance, a flat plate with appropriate ridge-like protrusions is provided. A shutter board characterized by being formed.
JP1985129318U 1985-08-23 1985-08-23 Expired JPH033580Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1985129318U JPH033580Y2 (en) 1985-08-23 1985-08-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985129318U JPH033580Y2 (en) 1985-08-23 1985-08-23

Publications (2)

Publication Number Publication Date
JPS6237079U true JPS6237079U (en) 1987-03-05
JPH033580Y2 JPH033580Y2 (en) 1991-01-30

Family

ID=31025789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985129318U Expired JPH033580Y2 (en) 1985-08-23 1985-08-23

Country Status (1)

Country Link
JP (1) JPH033580Y2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5694730A (en) * 1979-12-28 1981-07-31 Nec Corp Preparation method of compound semiconductor thin film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5694730A (en) * 1979-12-28 1981-07-31 Nec Corp Preparation method of compound semiconductor thin film

Also Published As

Publication number Publication date
JPH033580Y2 (en) 1991-01-30

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