JPS6238838B2 - - Google Patents
Info
- Publication number
- JPS6238838B2 JPS6238838B2 JP55020409A JP2040980A JPS6238838B2 JP S6238838 B2 JPS6238838 B2 JP S6238838B2 JP 55020409 A JP55020409 A JP 55020409A JP 2040980 A JP2040980 A JP 2040980A JP S6238838 B2 JPS6238838 B2 JP S6238838B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- emitting layer
- light
- dielectric constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 description 54
- 239000011521 glass Substances 0.000 description 50
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 33
- 238000000034 method Methods 0.000 description 16
- 239000007788 liquid Substances 0.000 description 15
- 238000002844 melting Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 239000000843 powder Substances 0.000 description 10
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 10
- 230000008018 melting Effects 0.000 description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 8
- 239000011230 binding agent Substances 0.000 description 7
- -1 cyanoethyl saccharose Chemical compound 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 238000005470 impregnation Methods 0.000 description 6
- XCKPLVGWGCWOMD-YYEYMFTQSA-N 3-[[(2r,3r,4s,5r,6r)-6-[(2s,3s,4r,5r)-3,4-bis(2-cyanoethoxy)-2,5-bis(2-cyanoethoxymethyl)oxolan-2-yl]oxy-3,4,5-tris(2-cyanoethoxy)oxan-2-yl]methoxy]propanenitrile Chemical compound N#CCCO[C@H]1[C@H](OCCC#N)[C@@H](COCCC#N)O[C@@]1(COCCC#N)O[C@@H]1[C@H](OCCC#N)[C@@H](OCCC#N)[C@H](OCCC#N)[C@@H](COCCC#N)O1 XCKPLVGWGCWOMD-YYEYMFTQSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 4
- 229910002113 barium titanate Inorganic materials 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 239000011344 liquid material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- FFEAPGFPRVGYJH-UHFFFAOYSA-N 2-(1-cyanoethoxycarbonyl)benzoic acid Chemical compound N#CC(C)OC(=O)C1=CC=CC=C1C(O)=O FFEAPGFPRVGYJH-UHFFFAOYSA-N 0.000 description 3
- DKUUKDDUYQFPFQ-UHFFFAOYSA-N 2-(2-cyanoethoxycarbonyl)benzoic acid Chemical compound OC(=O)C1=CC=CC=C1C(=O)OCCC#N DKUUKDDUYQFPFQ-UHFFFAOYSA-N 0.000 description 3
- 229920000297 Rayon Polymers 0.000 description 3
- 229930006000 Sucrose Natural products 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 210000003298 dental enamel Anatomy 0.000 description 3
- 235000013681 dietary sucrose Nutrition 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- 238000013007 heat curing Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229960004793 sucrose Drugs 0.000 description 3
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 2
- 229940088601 alpha-terpineol Drugs 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical group C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 1
- 125000001731 2-cyanoethyl group Chemical group [H]C([H])(*)C([H])([H])C#N 0.000 description 1
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910007472 ZnO—B2O3—SiO2 Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 235000000346 sugar Nutrition 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Description
【発明の詳細な説明】
本発明は輝度、寿命および安定性を改善した分
散型電場発光素子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a distributed electroluminescent device with improved brightness, lifetime and stability.
現在、表示素子としては、液晶、発光ダイオー
ドおよび螢光表示管などがそれぞれの特徴を活か
した面で実用されており、電場発光素子は低輝度
でも良いというごく一部の表示用に使われている
のみで、ほとんど実用されていない。その理由は
周知のように輝度、寿命の面で実用レベルに到達
していないからである。しかし、電場発光素子は
各色発光可能な平面光源で、比較的大面積のもの
がきわめて低コストで製造できる上、低消費電
力、デザイン上の自由度も大きいという他の表示
素子にない特長を有しており、家電品、計測器、
車輌、船舶、航空機用の表示用や各種デイスプレ
イおよび平面テレビなどへの期待は依然として続
いている。問題点は輝度、寿命であるが、輝度と
しては、実用的な表示用として20〜30ft−Lは必
要であり、輝度の半減寿命としては、3000時間以
上、使用可能時間10000時間以上が要求される。 Currently, liquid crystals, light-emitting diodes, and fluorescent display tubes are used as display elements, taking advantage of their respective characteristics, and electroluminescent elements are used for only a limited number of displays that require low brightness. There is only one, but it is hardly ever put into practical use. The reason for this is that, as is well known, the brightness and lifespan have not reached practical levels. However, electroluminescent devices are planar light sources that can emit light in various colors, and they have features that other display devices do not have, such as being able to manufacture relatively large area devices at extremely low cost, low power consumption, and a large degree of freedom in design. home appliances, measuring instruments,
Expectations continue to be high for use in displays for vehicles, ships, aircraft, various displays, and flat-screen TVs. The problem is brightness and lifespan, but a brightness of 20 to 30ft-L is required for practical display purposes, and a half-life of brightness is required to be at least 3,000 hours and a usable time of at least 10,000 hours. Ru.
しかし、現在低コストで実用的な輝度が期待さ
れる、ZnS系螢光体粉末をレジン又はセラミツク
中に分散させた分散極電場発光素子で上記の条件
を満足するものは得られていない。印加電場の周
波数、電圧によつて輝度を高めることはできる
が、寿命は一層短かくなるのが現状である。 However, at present, no dispersion polar electroluminescent device in which ZnS-based phosphor powder is dispersed in resin or ceramic, which is expected to have low cost and practical brightness, satisfies the above conditions. Although the brightness can be increased by changing the frequency and voltage of the applied electric field, the current situation is that the lifetime becomes even shorter.
また、従来から高誘電率レジンを用いる輝度の
改善されたレジン型発光素子が実験されてきた
が、これらで用いられるバインダ用レジンは、そ
の製膜面や製膜後の安定性の面で、比誘電率20〜
25程度、高くても30どまりであつた。ZnS系螢光
体の発光時の見掛けの誘電率から考えれば、比誘
電率40以上のバインダーが望まれるが、このよう
な高誘電率材料はほとんど液状のものであり、製
膜面や製膜後の安定性および発光素子として動作
中に螢光体粒子等が凝集するなどして発光面が乱
れる問題があり、実用的な電場発光素子用のバイ
ンダーとしては単独で使用できなかつた。また、
上記のZnS系螢光体は水分によつて劣化が促進さ
れるので、発光素子として作成する場合には、こ
られに適当な防湿封止策を行なうのが普通であ
る。例えば、レジンをバインダーとするレジン型
素子では、エポキシレジン等の接着剤を用いて防
湿用ガラス板による防湿封止が行なわれており、
適当な加熱硬化型エポキシ樹脂の使用やその防湿
プロセスの工夫である程度の目的を達成すること
ができる。しかし、レジンによる接着である限
り、それらの保存中あるいは点灯動作中に空気中
の湿気によつて、その接着層が徐々に吸湿し、接
着材層とガラスとの間で界面剥離を生じ、急速な
劣化を生じることがある。 In addition, resin-type light emitting devices with improved brightness using high dielectric constant resins have been experimented with in the past, but the binder resins used in these devices have problems in terms of film formation and stability after film formation. Relative permittivity 20~
It was around 25, maybe 30 at most. Considering the apparent permittivity of the ZnS-based phosphor when it emits light, a binder with a relative permittivity of 40 or higher is desired, but most of these high permittivity materials are in liquid form, and the film forming surface and There were problems with subsequent stability and disturbance of the light-emitting surface due to aggregation of phosphor particles during operation as a light-emitting device, and it could not be used alone as a practical binder for electroluminescent devices. Also,
The deterioration of the above ZnS-based phosphor is accelerated by moisture, so when it is manufactured as a light-emitting element, it is common to take appropriate moisture-proof sealing measures. For example, in resin-type devices that use resin as a binder, moisture-proof sealing is performed with a moisture-proof glass plate using an adhesive such as epoxy resin.
The purpose can be achieved to some extent by using an appropriate heat-curing epoxy resin and devising a moisture-proofing process. However, as long as resin is used for adhesion, the adhesive layer gradually absorbs moisture due to moisture in the air during storage or lighting operation, causing interfacial delamination between the adhesive layer and the glass, causing rapid This may cause severe deterioration.
さらに、鉄基板上に低融点ガラスを用いて螢光
体粉末を焼結するほうろう型電場発光素子もすで
に周知のものであるが、その作成プロセスにおい
て、ZnS系螢光体を500〜700℃の高温で処理する
ことになるので、螢光体自体の輝度低下が大き
く、また、ZnS系螢光体のバインダーに適したガ
ラス類は鉛やビスマス、アンチモンなどを含まな
いものに限定されるので、その誘電率は大きくて
も8〜10位であり、電場発光素子用バインダーと
しては誘電率が不足である。そのため、ほうろう
型のものは高誘働率レジンを使用するものと比較
して、その輝度は約1/10程度と低く、表示用とし
ては不満足である。また、ほうろう型のように発
光層を焼結によつて作る型のものは、その発光層
内に多くの欠陥、空隙が存在し、絶縁耐圧の低
下、短絡のおそれがあり、素子の防湿、保護のた
めに、発光層を損傷しない程度の温度処理できる
低融点ガラスなどを用いて、防湿用カバーコート
層に設けていた。しかし、このコート用ガラスも
低融点で流動性に富む鉛系、ビスマス系などのガ
ラスを直接使用することができず、そのため、コ
ート層も欠陥やピンホール皆無とはならず、その
ため絶縁耐圧が低下するばかりでなく、それらを
通して侵入する湿気によつて、点灯動作中に発光
面に小斑点状の不発光部分を生じたり、また、そ
こから黒化が進行して輝度低下を生じるなどの問
題があつた。 Furthermore, enamel-type electroluminescent devices are already well known, in which phosphor powder is sintered on an iron substrate using low-melting glass. Since the process is carried out at high temperatures, the brightness of the phosphor itself is greatly reduced, and glasses suitable as binders for ZnS-based phosphors are limited to those that do not contain lead, bismuth, antimony, etc. Its dielectric constant is about 8 to 10 at most, which is insufficient for use as a binder for electroluminescent devices. Therefore, the luminance of the enamel type is about 1/10 lower than that of the one using high dielectric constant resin, making it unsatisfactory for display purposes. In addition, enamelled molds whose light emitting layers are made by sintering have many defects and voids in the light emitting layer, which may lower the dielectric strength and cause short circuits, which may cause the device to become moisture-proof. For protection, a moisture-proof cover coat layer was provided using a material such as low-melting glass that could be treated at a temperature that would not damage the light-emitting layer. However, it is not possible to directly use lead-based or bismuth-based glass, which has a low melting point and high fluidity, for this coating, and as a result, the coating layer is not free of defects and pinholes, and as a result, the dielectric strength is low. Not only does it deteriorate, but moisture that enters through them can cause small spots on the light emitting surface during lighting operation, and blackening progresses from there, resulting in a decrease in brightness. It was hot.
本発明の目的は、上記した従来技術の欠点をな
くし、高誘電率バインダーを使用した高輝度の螢
光体粉末分散焼結型電場発光素子およびその防湿
方法を提供することにある。さらに、詳しくは、
少なくとも誘電率20以上の高誘電率液状物質を空
隙充填材とした高輝度でかつ安定性のある実用的
な分散型電場発光素子および絶縁耐圧の低下や不
発光点の発生を押えうるのみでなく、輝度も向上
させる効果を有する防湿型電場発光素子を提供す
ることにある。 An object of the present invention is to eliminate the above-mentioned drawbacks of the prior art and to provide a high-brightness phosphor powder-dispersed sintered electroluminescent device using a high dielectric constant binder and a moisture-proofing method therefor. Furthermore, for more details,
A practical distributed electroluminescent element with high brightness and stability that uses a high dielectric constant liquid material with a dielectric constant of at least 20 as a void filling material, and which can not only suppress the decrease in dielectric strength voltage and the occurrence of non-luminescent spots. Another object of the present invention is to provide a moisture-proof electroluminescent device that also has the effect of improving brightness.
本発明の分散焼結型電場発光素子の特徴とする
ところは、螢光体層または螢光体層および高誘電
率絶縁反射層などからなる電極間構成物質層を螢
光体に無害な金属の酸化物で焼結した形のものに
して、電場印加、点灯中に螢光体等が移動、凝集
しないように固定しておき、つぎに、上記の焼結
層に螢光体に無害な高誘電率液状物質を含浸させ
ること、さらには、このような素子をガラス容器
中に封入して防湿型としたことにある。 The feature of the dispersion sintered electroluminescent device of the present invention is that the interelectrode constituent material layer consisting of a phosphor layer or a phosphor layer and a high dielectric constant insulating reflective layer is made of a metal that is harmless to the phosphor. The material is sintered with oxide and fixed to prevent the phosphor from moving or aggregating during application of an electric field and lighting.Next, the sintered layer is coated with a high-carbon material that is harmless to the phosphor. The device is impregnated with a liquid substance having a dielectric constant, and further, the device is sealed in a glass container to make it moisture-proof.
螢光体層や高誘電率絶縁層の焼結方法として
は、これらの製膜用ペーストあるいはスラリーに
螢光体に無害な金属の有機錯体、例えば、金属ア
ルコキシド溶液を配合し、ネサガラス板(表面に
いわゆるネサ膜と称する透明導電膜をもつたガラ
ス板)上に塗布、製膜し、加熱、乾燥後、さら
に、前記金属アルコキシド溶液を追加、含浸した
上、400〜450℃の加熱処理を行なつて、有機成分
を残らず焼散させると同時に生成する金属酸化物
によつて螢光体層等を焼結する方法がある。ま
た、他の方法としては螢光体に無害な中性塩の溶
液を配合して焼成する方法や、若干焼結温度が高
くはなるが、螢光体に無害な低融点ガラス微粉末
を配合したペーストあるいはスラリーを用いて製
膜し、600℃前後の温度で焼成を行なうことによ
つても焼結型のものを得ることができる。以上の
焼結用に適した材料としては、螢光体に無害であ
ることは勿論であるが、400℃以上の高温加熱で
酸化物に転化する材料である場合には、例えば、
現用のZnS系螢光体と反応して黒色などの吸光性
色にならず、透明または白色を保持できる材料で
あることが必要であり、また、できるだけ誘働率
の高いものが望ましい。以上の点から、例えば、
チタン、亜鉛、錫、インジウム、バリウム、スト
ロンチウム、カルシウム、アルミニウム、ボロ
ン、ケイ素など、また、若干高価にはなるが、ユ
ーロピウム、イツトリウム、テルビウム、サマリ
ウム等の希土類元素等の金属の錯体や中性塩類が
適用できる。また、低融点ガラスとしては、黒色
化の恐れのないZnO−B2O3−SiO2系、B2O3−
SiO2系等が使用できる。 The method for sintering the phosphor layer and high dielectric constant insulating layer is to mix an organic complex of a metal that is harmless to the phosphor, such as a metal alkoxide solution, with these film-forming pastes or slurries, After coating and forming a film on a glass plate with a transparent conductive film called Nesa film, heating and drying, the above-mentioned metal alkoxide solution was added and impregnated, and heat treatment was performed at 400 to 450°C. There is a method in which the organic components are completely burned out and at the same time, the phosphor layer and the like are sintered using the generated metal oxide. Other methods include mixing the phosphor with a harmless neutral salt solution and firing it, or adding harmless low-melting point glass fine powder to the phosphor, although the sintering temperature will be slightly higher. A sintered type can also be obtained by forming a film using a paste or slurry and firing at a temperature of around 600°C. Materials suitable for the above sintering include, of course, those that are harmless to the phosphor, but which convert into oxides when heated at high temperatures of 400°C or higher, such as:
The material needs to be able to maintain its transparent or white color without reacting with the currently used ZnS-based phosphor to become a light-absorbing color such as black, and it is also desirable to have a dielectric constant as high as possible. From the above points, for example,
Complexes and neutral salts of metals such as titanium, zinc, tin, indium, barium, strontium, calcium, aluminum, boron, silicon, and rare earth elements such as europium, yttrium, terbium, and samarium, although they are slightly more expensive. is applicable. In addition, low melting point glasses include ZnO−B 2 O 3 −SiO 2 series, B 2 O 3 −
SiO 2 type etc. can be used.
上記のようにして、ネサガラス板上に焼結型の
発光層を形成した後、この上にアルミニウム等の
真空蒸着やスパツタリング等の手段で背面電極を
形成し、第1図に示すような焼結型発光素子を作
る。図において、1はガラス基板、2は透明導電
膜、3は焼結型の発光層、4は背面電極であり、
場合によつては、発光層3と背面電極4の間に高
誘電率絶縁反射層を設けることもある。ついで、
この電極間構成物質層全体にできるだけ誘電率が
高く、かつ、できるだけ不揮発性の液状物質を含
浸させればよい。含浸用の高誘電率、高沸点の液
体としては、例えば、シアノエチルサツカロー
ズ、α−シアノエチルフタレート、β−シアノエ
チルフタレート等があり、これらは比誘電率20以
上で、沸点も150℃以上であり、本発明の目的と
する材料として適している。この高誘電率液状物
質の含浸により、従来、焼結型では避けられなか
つた発光層内の空隙、欠陥がすべて高誘電率液体
で充填され、比較的誘電率の高い酸化物で結着さ
れた螢光体粉末が、さらに誘電率の高い液体内に
固定分散された形となる。その結果、電極間の絶
縁耐圧が高まるばかりでなく、螢光体に有効に電
場が印加されるようになるので、高輝度で、寿命
も改善された分散焼結型の電場発光素子が得られ
ることになる。 After forming a sintered light-emitting layer on the Nesa glass plate as described above, a back electrode is formed on this by means such as vacuum evaporation of aluminum or sputtering, and then sintered as shown in Figure 1. Make a type light emitting element. In the figure, 1 is a glass substrate, 2 is a transparent conductive film, 3 is a sintered light emitting layer, 4 is a back electrode,
In some cases, a high dielectric constant insulating reflective layer may be provided between the light emitting layer 3 and the back electrode 4. Then,
The entire interelectrode constituent material layer may be impregnated with a liquid material that has as high a dielectric constant as possible and is as nonvolatile as possible. Examples of liquids with a high dielectric constant and a high boiling point for impregnation include cyanoethyl saccharose, α-cyanoethyl phthalate, and β-cyanoethyl phthalate, which have a dielectric constant of 20 or higher and a boiling point of 150°C or higher. It is suitable as a material for the purpose of the present invention. By impregnating this high dielectric constant liquid material, all the voids and defects in the emissive layer that were unavoidable in the conventional sintered type are filled with the high dielectric constant liquid and bonded with an oxide with a relatively high dielectric constant. The phosphor powder is in a fixed and dispersed form within the liquid having a higher dielectric constant. As a result, not only the dielectric strength between the electrodes is increased, but also an electric field is effectively applied to the phosphor, making it possible to obtain a distributed sintered electroluminescent device with high brightness and improved lifetime. It turns out.
以下に本発明を実施例により詳細に説明する。 The present invention will be explained in detail below using examples.
実施例 1
エチルセルローズ濃度5重量%のαテルピネオ
ール溶液1重量部に対し、電場発光性のZnS螢光
体7重量部、チタン酸バリウム微粉末2重量部、
アクリルエステルSA(三菱レイヨン社製)で安
定化したチタンテトライソプロポキシド溶液0.5
重量部を加え、さらに、適量のαテルピネオール
などを希釈して発光層製膜用ペーストを調合し
た。このペーストをスクリーン印刷法によつてガ
ラス基板1の透明導電膜2上に印刷し、製膜し、
150〜200℃で加熱、乾燥した後、さらに、前記膜
中への前記チタンテトライソプロポキシド安定化
溶液の真空含浸とその加熱、乾燥を数回繰り返
し、続いて、最高430℃、約60分の焼成処理を施
こした。この焼成処理により、前記膜中の有機物
成分は焼散すると同時にチタンテトライソプロポ
キシドの熱分解により生成する酸化チタンで前記
螢光体粉末が焼結された形の電場発光層3が得ら
れる。つぎに、この発光層3の上にアルミニウム
の真空蒸着により背面電極4を形成し、通常の焼
結型の電場発光素子を得た(第1図参照)。この
素子の透明導電膜2と背面電極4との間に交流電
場を印加して、この素子が発光することと、その
絶縁耐圧の確認をした。ついで、この発光素子を
減圧雰囲気中で、約130℃に加熱した状態で、前
記発光素子の発光層3全体にシアノエチルサツカ
ローズを十分に含浸させた。このようにして得ら
れた本発明による電場発光素子は、250Hz、100V
点灯で、使用螢光体やその膜厚などで若干異なつ
てくるが、20〜30ft−Lの輝度を有していた。Example 1 7 parts by weight of electroluminescent ZnS phosphor, 2 parts by weight of fine barium titanate powder,
Titanium tetraisopropoxide solution stabilized with acrylic ester SA (manufactured by Mitsubishi Rayon Co., Ltd.) 0.5
Parts by weight were added, and an appropriate amount of α-terpineol was further diluted to prepare a paste for forming a light-emitting layer. This paste is printed on the transparent conductive film 2 of the glass substrate 1 by screen printing method to form a film,
After heating and drying at 150 to 200°C, vacuum impregnation of the titanium tetraisopropoxide stabilizing solution into the membrane, heating, and drying are repeated several times, followed by heating at a maximum of 430°C for about 60 minutes. A firing process was performed. By this firing treatment, the organic components in the film are burnt out, and at the same time, an electroluminescent layer 3 is obtained in which the phosphor powder is sintered with titanium oxide produced by thermal decomposition of titanium tetraisopropoxide. Next, a back electrode 4 was formed on the light emitting layer 3 by vacuum evaporation of aluminum to obtain a conventional sintered electroluminescent element (see FIG. 1). An alternating current electric field was applied between the transparent conductive film 2 and the back electrode 4 of this element to confirm that this element emits light and its dielectric strength. Next, the light emitting element was heated to about 130° C. in a reduced pressure atmosphere, and the entire light emitting layer 3 of the light emitting element was sufficiently impregnated with cyanoethyl sucrose. The electroluminescent device according to the present invention obtained in this way has a voltage of 250Hz and 100V.
When lit, it had a brightness of 20 to 30 ft-L, although it varied slightly depending on the phosphor used and its film thickness.
しかし、このままでは空気中の湿気によつて劣
化するので、実用化のためにはこれを防湿型の素
子とすることが必要である。 However, if left as is, it will deteriorate due to moisture in the air, so it is necessary to make it a moisture-proof element for practical use.
以下に、上記の型の電場発光素子を完全な防湿
型のものとする方法について説明する。 Below, a method for making the electroluminescent device of the above type completely moisture-proof will be described.
実施例 2
まず、第1図に示したような、透明導電膜2を
表面に形成されたガラス基板1の透明導電膜2上
に焼結型電場発光層3とその上に背面電極4を形
成した型の焼結型電場発光素子を前記の方法を用
いて作製する。Example 2 First, as shown in FIG. 1, a sintered electroluminescent layer 3 and a back electrode 4 were formed on a transparent conductive film 2 of a glass substrate 1 having a transparent conductive film 2 formed on its surface. A sintered electroluminescent device of this type is produced using the method described above.
第2図aは前記発光素子の防湿のために用いる
蓋状ガラス板5の平面図、同図bは図aのA−A
断面図である。この蓋状ガラス板5は1枚のガラ
ス板をその周辺部に所定厚さおよび所定幅の側壁
6を残して弗酸エツチング法によりエツチ加工し
て凹部7を形成すると同時に側壁6の適当箇所に
高誘電液状物質注入用の小溝8を設けたものであ
る。なお、前記凹部7の大きさは、第1図の発光
層3が十分にカバーされるようにこれよりやや大
き目に、その深さも前記発光層3と背面電極4と
の厚さよりもやや大き目、例えば50〜100μm程
度の深さとし、また、小溝8の深さは凹部7の深
さとほぼ同等で、幅は1〜2mm程度の寸法とし、
この加工は前記凹部7の形成と同時に行なつた。
さらに、蓋状ガラス板5の外側寸法はガラス基板
1よりは小さいものとする。つぎに、前記の蓋状
ガラス板5の側壁6の端面に小溝8の部分を避け
て、鉛ガラス系の低融点ガラスペースト層を印刷
で形成し、乾燥後、第3図に示すように、前記蓋
状ガラス板5を発光素子の発光層3と背面電極4
にかぶせた上、最高温度430℃の電気炉内に入れ
て焼成し、低融点ガラス層9によつて、ガラス基
板1と蓋状ガラス板5とを接着した。ついで、上
記の方法で第3図に示す状態にした発光素子を
10-1〜10-2mmHg、140℃の減圧雰囲気中で2〜3
時間の加熱、乾燥を行ない、同じ雰囲気中で、溶
融状態のシアノエチルサツカローズ中に浸漬し、
蓋状ガラス板5の小溝8を通して、前記素子の発
光層3中のシアノエチルサツカローズを十分含浸
させた後、第4図に示すように、同じ雰囲気中で
蓋状ガラス板5の小溝8を加熱硬化型のエポキシ
樹脂10によつて閉塞すれば、本発明による防湿
型の電場発光素子が得られる。 FIG. 2a is a plan view of the lid-shaped glass plate 5 used for moisture-proofing the light emitting element, and FIG.
FIG. This lid-shaped glass plate 5 is made by etching a single glass plate using a hydrofluoric acid etching method, leaving a side wall 6 of a predetermined thickness and width on the periphery thereof, forming a concave portion 7, and at the same time forming a concave portion 7 at an appropriate location on the side wall 6. A small groove 8 for injecting a high dielectric liquid material is provided. Note that the size of the recess 7 is slightly larger than that in order to sufficiently cover the light emitting layer 3 shown in FIG. 1, and its depth is also slightly larger than the thickness of the light emitting layer 3 and the back electrode 4. For example, the depth is about 50 to 100 μm, the depth of the small groove 8 is almost the same as the depth of the recess 7, and the width is about 1 to 2 mm.
This processing was performed simultaneously with the formation of the recess 7.
Furthermore, the outer dimensions of the lid-shaped glass plate 5 are smaller than the glass substrate 1. Next, a lead glass-based low melting point glass paste layer is formed by printing on the end face of the side wall 6 of the lid-shaped glass plate 5, avoiding the small groove 8, and after drying, as shown in FIG. The lid-shaped glass plate 5 is used as a light-emitting layer 3 and a back electrode 4 of a light-emitting element.
The glass substrate 1 and the lid-like glass plate 5 were bonded together by the low melting point glass layer 9 by placing the glass plate in an electric furnace at a maximum temperature of 430° C. and firing it. Next, the light-emitting element made into the state shown in FIG. 3 by the above method was
10 -1 to 10 -2 mmHg, 2 to 3 in a reduced pressure atmosphere at 140℃
Heating and drying for hours, immersing in molten cyanoethyl sugar rose in the same atmosphere,
After sufficiently impregnating the light-emitting layer 3 of the device with cyanoethyl saccharose through the small grooves 8 of the lid-shaped glass plate 5, the small grooves 8 of the lid-shaped glass plate 5 are heated in the same atmosphere as shown in FIG. By closing with the hardening epoxy resin 10, a moisture-proof electroluminescent device according to the present invention can be obtained.
上記した本発明による防湿型の電場発光素子
は、従来のカバーコート・ガラス層で防湿するほ
うろう型電場発光素子に見られるような発光面の
微小不発光点(しみ)やざらついた感じはなく、
全面均質なものであり、60〜70℃、相対湿度95%
以上の雰囲気における連続点灯においても発光面
に全く異常を生じなかつた。また、発光層3内の
空隙や欠陥ならびに蓋状ガラス板5の空隙10は
すべて絶縁性の比誘電率40の液体で充填されてい
るので、絶縁耐圧は大きく、また、それだけ発光
層膜厚(電極間距離)を小さくすることができる
ので、従来のろうろう型と比較して、輝度は約20
倍に向上させることができた。輝度そのものは、
使用する螢光体の種類、発光層構成とその層の厚
さ、作成プロセス条件および印加する電場強度、
周波数によつて異なつてくるが、本発明者らの実
験の結果によれば、例えば250Hz、100V(RMS)
点灯で、20〜25ft−Lであり、使用可能時間
10000時間以上を示した。 The moisture-proof electroluminescent device according to the present invention described above does not have minute non-luminous spots (stains) or roughness on the light emitting surface, which is seen in the conventional enamel electroluminescent device which is moisture-proofed with a cover coat/glass layer.
Fully homogeneous, 60-70℃, relative humidity 95%
Even during continuous lighting in the above atmosphere, no abnormality occurred on the light emitting surface. In addition, since the voids and defects in the light emitting layer 3 and the voids 10 in the lid-shaped glass plate 5 are all filled with an insulating liquid with a dielectric constant of 40, the dielectric strength voltage is large, and the thickness of the light emitting layer ( Since the distance between the electrodes can be reduced, the brightness is approximately 20% lower than that of the conventional wax type.
I was able to double the improvement. The brightness itself is
The type of phosphor to be used, the structure of the emissive layer and the thickness of that layer, the creation process conditions and the electric field strength to be applied,
It varies depending on the frequency, but according to the results of experiments by the inventors, for example, 250Hz, 100V (RMS)
When lit, it is 20 to 25 ft-L and can be used for a long time.
Showed more than 10000 hours.
以上の実施例においては、螢光体粒子などの焼
結剤として誘電率の大きいものが望ましいので、
チタン系有機錯体の安定化溶液をペーストに配合
して焼結型発光層を形成した例について述べたが
現用のZnS系螢光体に無害で、無色透明または白
色の酸化物が得られる金属、例えば、亜鉛、錫、
インジウム、マグネシウム、カルシウム、ストロ
ンチウム、バリウム、アルミニウム、ホウ素、ケ
イ素などの有機錯体などはすべて上記と同様に螢
光体粒子等の固定手段として使用可能である。 In the above examples, it is desirable to use a material with a large dielectric constant as a sintering agent for the phosphor particles, etc.
We have described an example in which a sintered light-emitting layer was formed by blending a stabilizing solution of a titanium-based organic complex into a paste. For example, zinc, tin,
Organic complexes such as indium, magnesium, calcium, strontium, barium, aluminum, boron, silicon, etc. can all be used as means for fixing phosphor particles and the like in the same manner as above.
また、発光層に含浸する高誘電率液体として
は、前記のほかに、α−シアノエチルフタレー
ト、β−シアノエチルフタレート等がある。これ
らは前記シアノエチルサツカローズよりも流動性
に富んでおり、防湿用ガラス板の小溝からの注
入、含浸が容易であり、含浸による絶縁耐圧およ
び輝度向上の効果も同様に大きい。 In addition to the above, examples of the high dielectric constant liquid to be impregnated into the light emitting layer include α-cyanoethyl phthalate and β-cyanoethyl phthalate. These have higher fluidity than the above-mentioned cyanoethyl saccharose, and can be easily injected and impregnated into the small grooves of a moisture-proof glass plate, and the effects of impregnation in improving dielectric strength and brightness are also large.
実施例 3
エチルセルローズ2重量部、チタンテトライソ
プロポキシド5重量部、アクリルエステルSA
(三菱レーヨン社製商品名)5重量部、電場発光
性螢光体粉末125重量部、酸化チタン25重量部、
これに溶剤としてα−テルピネオール68重量部、
エチルアルコール20重量部を加えてなる螢光体ペ
ーストをスクリーン印刷法によつてネサガラス基
板上に所定の大きさに印刷し、膜厚約35μmの螢
光体層を形成した。つぎに、エチルセルローズ2
重量部、テチンテトライソプロポキシド5重量
部、アクリルエステルSA(三菱レーヨン社製商
品名)5重量部、チタン酸バリウム粉末330重量
部、溶剤としてのαテトピネオール68重量部及び
エチルアルコール20重量部よりなるチタン酸バリ
ウムペーストを用いて、前記螢光体層上に膜厚約
5μmに印刷、製膜し、合計膜厚約40μmの2層
構成の発光層を形成した。ついで、前記発光層形
成基板に対し、約200℃、30分間の加熱処理を施
した後、チタンテトライソプロポキシド1重量
部、アクリルエステルSA1重量部及び希釈剤エチ
ルアルコール2重量部よりなるチタン錯体液の前
記発光層への含浸及び200℃、30分間の加熱処理
よりなる含浸と加熱の操作を数回繰返し、引き続
き、約420℃、45分間の焼成を行なつて、前記発
光層中の有機成分を焼散させると共に前記チタン
錯体の熱分解で生成する酸化チタンによつて前記
螢光体粒子や酸化チタン粉末及びチタン酸バリウ
ム粉末を結着し、焼結型の発光層に変換した。つ
ぎに、アルミニウム真空蒸着の方法で前記発光層
上に背面電極を形成することにより酸化チタン焼
結型の電場発光素子を作成したが、この時点で前
記ネサ基板電極(透明導電膜)と背面電極との間
に250Hz、100Vの交流電場を印加したところ、6
〜8ft−Lの輝度を示した。ついで、この電場発
光素子を約120℃の加熱状態に保つて高誘電率液
体であるシアノエチルサツカローズを発光層全体
に含浸させた。この結果、この電場発光素子は、
250Hz、100Vの交流電場印加で約25ft−Lの輝度
を示すようになつた。Example 3 2 parts by weight of ethyl cellulose, 5 parts by weight of titanium tetraisopropoxide, acrylic ester SA
(Product name manufactured by Mitsubishi Rayon Co., Ltd.) 5 parts by weight, 125 parts by weight of electroluminescent phosphor powder, 25 parts by weight of titanium oxide,
To this, 68 parts by weight of α-terpineol as a solvent,
A phosphor paste prepared by adding 20 parts by weight of ethyl alcohol was printed to a predetermined size on a Nesa glass substrate by screen printing to form a phosphor layer with a thickness of about 35 μm. Next, ethyl cellulose 2
Parts by weight, 5 parts by weight of Tetin tetraisopropoxide, 5 parts by weight of acrylic ester SA (trade name manufactured by Mitsubishi Rayon Co., Ltd.), 330 parts by weight of barium titanate powder, 68 parts by weight of α-tetopineol as a solvent, and 20 parts by weight of ethyl alcohol. A barium titanate paste was used to print and form a film on the phosphor layer to a thickness of about 5 μm to form a two-layer light-emitting layer with a total thickness of about 40 μm. Next, the light-emitting layer forming substrate is subjected to a heat treatment at about 200°C for 30 minutes, and then a titanium complex consisting of 1 part by weight of titanium tetraisopropoxide, 1 part by weight of acrylic ester SA, and 2 parts by weight of ethyl alcohol as a diluent. The operation of impregnation and heating, which consists of impregnating the luminescent layer with a liquid and heating it at 200°C for 30 minutes, is repeated several times, followed by baking at about 420°C for 45 minutes to remove the organic matter in the luminescent layer. While the components were burnt out, the phosphor particles, titanium oxide powder, and barium titanate powder were bound together by titanium oxide produced by thermal decomposition of the titanium complex, thereby converting it into a sintered light-emitting layer. Next, a titanium oxide sintered electroluminescent device was created by forming a back electrode on the light emitting layer using an aluminum vacuum evaporation method.At this point, the NESA substrate electrode (transparent conductive film) and the back electrode When an AC electric field of 250Hz and 100V was applied between
It showed a brightness of ~8ft-L. Next, this electroluminescent device was kept in a heated state of about 120° C., and the entire light emitting layer was impregnated with cyanoethyl sucrose, which is a high dielectric constant liquid. As a result, this electroluminescent device is
When an AC electric field of 250 Hz and 100 V was applied, the luminance was about 25 ft-L.
実施例 4
実施例3で述べたのと同じ方法で、酸化チタン
焼結型の電場発光素子を作成して、その発光動作
を確認した後、高誘電率液体の含浸及び防湿封止
を下記のようにして行なつた。Example 4 After creating a titanium oxide sintered electroluminescent device using the same method as described in Example 3 and confirming its light emitting operation, impregnation with a high dielectric constant liquid and moisture-proof sealing were performed as follows. That's how I did it.
まず、第2図に示したように、一枚のガラス板
の全周縁部分に約5nm幅の側壁6を残して、前
記発光素子の発光層収納相当部分を弗酸エツチン
グ法によつて深さ約0.08mmの凹部7を形成すると
共にその側壁6の一部にも深さ約0.08mm幅約1mm
の高誘電率液体注入用の小溝8を形成し、防湿用
の蓋状ガラス板5を作成した。この防湿用蓋状ガ
ラス板5の側壁6の端面部は、いわゆる「のりし
ろ」であり、前記小溝8の部分を除いて、前記
「のりしろ」部分上に低融点ガラスペーストを印
刷し、引続き、420℃、40分間の加熱処理を行な
つて、前記「のりしろ」部分に低融点ガラス層9
を形成した。つぎに、前記背面電極形成ずみの酸
化チタン焼結型電場発光素子に前記低融点ガラス
層形成ずみの防湿用蓋状ガラス板5をかぶせ、適
当な治具で保持した状態で、420℃、30分間の加
熱を行ない、「のりしろ」部分の低融点ガラス層
で前記焼結型発光素子のネサガラス基板に防湿用
蓋状ガラス板を溶着した。 First, as shown in FIG. 2, a side wall 6 with a width of approximately 5 nm is left on the entire periphery of a single glass plate, and a portion corresponding to the light emitting layer of the light emitting element is etched to a depth using a hydrofluoric acid etching method. A recess 7 of approximately 0.08 mm is formed, and a portion of the side wall 6 is also approximately 0.08 mm deep and approximately 1 mm wide.
A small groove 8 for injecting a high dielectric constant liquid was formed, and a moisture-proof lid-shaped glass plate 5 was created. The end surface of the side wall 6 of this moisture-proof lid-like glass plate 5 is a so-called "gluing margin", and a low melting point glass paste is printed on the "gluing margin" except for the small groove 8 part, and then 420 ℃ for 40 minutes to form a low melting point glass layer 9 on the "glue" part.
was formed. Next, the titanium oxide sintered electroluminescent element on which the back electrode has been formed is covered with the moisture-proof lid glass plate 5 on which the low-melting point glass layer has been formed, and the device is heated at 420°C for 30 minutes while being held with a suitable jig. Heating was performed for a minute to weld the moisture-proof lid-shaped glass plate to the Nesa glass substrate of the sintered light emitting element using the low melting point glass layer of the "glue" portion.
つぎに、防湿用蓋状ガラス板を溶着した発光素
子を10-2mmHg、120℃の減圧加熱雰囲気中で十分
に脱湿処理を行なつた後、同雰囲気中で十分に脱
湿処理をしたシアノエチルサツカローズ液中に浸
漬し、前記発光素子の防湿用ガラス板側壁部に設
けた小溝からシアノエチルサツカローズ液を真空
含浸の要領で注入し、前記発光素子の発光層中に
十分含浸させた後、注入に利用した防湿用蓋状ガ
ラス板の小溝部分に加熱硬化型エポキシ樹脂(例
えば、エポキシベースレジン100部、ジシアンジ
アミド8部)を充填し、150℃、5時間の加熱乾
燥により硬化させて、小溝部分を閉塞した。以上
の方法により、高誘電率液体を含浸させた上防湿
封止処理をした酸化チタン焼結型電場発光素子
は、250Hz、100Vの交流電場の印加で25〜30ft−
Lの輝度を示し、その使用寿命は10000時間以上
であつた。 Next, the light emitting element with the moisture-proof glass plate welded to it was thoroughly dehumidified in a reduced pressure heating atmosphere of 10 -2 mmHg and 120°C, and then thoroughly dehumidified in the same atmosphere. After immersing the light emitting element in a cyanoethyl sucrose liquid, injecting the cyanoethyl sucrose liquid into the light emitting layer of the light emitting element by injecting it through a small groove provided in the side wall of the moisture-proof glass plate in a vacuum impregnation manner. , Fill the small groove part of the moisture-proof lid glass plate used for injection with a heat-curing epoxy resin (for example, 100 parts of epoxy base resin, 8 parts of dicyandiamide), and harden it by heating and drying at 150 ° C. for 5 hours. The small groove was occluded. By the above method, a titanium oxide sintered electroluminescent device impregnated with a high dielectric constant liquid and subjected to moisture-proof sealing can be produced by applying an alternating current electric field of 250Hz and 100V to a height of 25 to 30 feet.
It exhibited a luminance of L, and its service life was over 10,000 hours.
以上説明したところから明らかなように、本発
明によつて、従来適当なベースレジンに配合して
可塑剤的にしか使用できなかつた高誘電率液状物
質であるα−シアノエチルフタレート、β−シア
ノエチルフタレート、シアノエチルサツカローズ
等を焼結型発光層の空隙、欠陥等に充填使用でき
るようになり、比較的高温中の点灯においても発
光面が乱れない高輝度の分散焼結型電場発光素子
の製造が可能になつた。 As is clear from the above explanation, by the present invention, α-cyanoethyl phthalate and β-cyanoethyl phthalate, which are high dielectric constant liquid substances that could only be used as plasticizers by blending with an appropriate base resin, can be produced. , cyanoethyl sucrose, etc. can now be used to fill voids, defects, etc. in the sintered light emitting layer, making it possible to manufacture high brightness dispersion sintered electroluminescent elements whose light emitting surface is not disturbed even when lit at relatively high temperatures. It became possible.
さらに、防湿処理を施こしたものは、低融点ガ
ラスによる防湿封止が400℃前後の比較的低温度
でできるので、従来のほうろう型のような螢光体
の損傷がほとんど起らず、高温、多湿雰囲気中で
の連続点灯にも長時間耐えることができるように
なり、現在入手可能な螢光体を用いて高輝度で安
定な分散焼結型電場発光素子の製作が可能とな
り、その実用化の途を拓くものである。 Furthermore, with moisture-proof treated products, moisture-proof sealing with low melting point glass can be done at a relatively low temperature of around 400℃, so there is almost no damage to the phosphor like with conventional enamel molds, and , it has become possible to withstand continuous lighting for long periods of time in a humid atmosphere, and it has become possible to produce high-luminance and stable dispersion sintered electroluminescent elements using currently available phosphors, and its practical use. This will pave the way for further development.
第1図は焼結型電場発光素子の断面図、第2図
〜第4図は本発明による防湿型電場発光素子の製
造工程の概略説明図である。
図において、1……ガラス基板、2……透明導
電膜、3……焼結型電場発光層、4……背面電
極、5……防湿用蓋状ガラス板、6……側壁、7
……凹部、8……注入用小溝、9……低融点ガラ
ス層、10……加熱硬化型エポキシ樹脂、11…
…蓋状ガラス板5内の空隙。
FIG. 1 is a cross-sectional view of a sintered electroluminescent device, and FIGS. 2 to 4 are schematic illustrations of the manufacturing process of the moisture-proof electroluminescent device according to the present invention. In the figure, 1... Glass substrate, 2... Transparent conductive film, 3... Sintered electroluminescent layer, 4... Back electrode, 5... Moisture-proof lid-shaped glass plate, 6... Side wall, 7
... Concavity, 8 ... Small groove for injection, 9 ... Low melting point glass layer, 10 ... Heat-curing epoxy resin, 11 ...
...Gap in the lid-shaped glass plate 5.
Claims (1)
する透明ガラス基板と、前記前面電極上に誘電体
中に螢光体粉末を分散、焼結して形成された発光
層又はさらに該発光層上に焼結によつて設けられ
た高誘電率絶縁性反射層と、前記発光層又は前記
反射層上に設けられた導電性金属層からなる背面
電極とを有する構造の分散型電場発光素子におい
て、前記焼結発光層又は前記焼結発光層と焼結反
射層からなる電極間構成物質層中に該電極間構成
物質に無害で無色又は透光性の高誘電率液状物質
を含浸せしめてなることを特徴とする分散型電場
発光素子。 2 一方の面上に前面電極となる透明導電膜を有
する透明ガラス基板と、前記前面電極上に誘電体
中に螢光体粉末を分散、焼結して形成された発光
層又はさらに該発光層上に焼結によつて設けられ
た高誘電率絶縁性反射層と、前記発光層又は前記
反射層上に設けられた導電性金属層からなる背面
電極とを有する構造の分散型電場発光素子におい
て、前記発光層と背面電極からなる2層膜又は前
記発光層と反射層と背面電極とからなる3層膜を
前記基板の前面電極側に所定幅の周辺露出部を残
して形成し、前記2層膜又は3層膜を多少の余裕
をもつて覆うに足る凹部をもつた蓋状ガラス板を
該2層膜又は3層膜にかぶせ、前記蓋状ガラス板
の側壁端面部を前記基板の露出部上に低融点ガラ
ス層によつて接着し、さらに、前記基板と蓋状ガ
ラス板とで形成された空間に前記蓋状ガラス板の
側壁に設けた小溝を通して、前記電極間構成物質
に無害で無色又は透光性の高誘電率液状物質を注
入して前記電極間物質中に十分に含浸させた後前
記小溝を封止してなることを特徴とする分散型電
場発光素子。[Scope of Claims] 1. A transparent glass substrate having a transparent conductive film serving as a front electrode on one surface, and a light emitting device formed by dispersing and sintering phosphor powder in a dielectric material on the front electrode. A structure having a high dielectric constant insulating reflective layer provided on the light emitting layer or the light emitting layer by sintering, and a back electrode made of a conductive metal layer provided on the light emitting layer or the reflective layer. In the distributed electroluminescent device, a colorless or translucent high dielectric constant liquid that is harmless to the interelectrode constituent material is contained in the sintered luminescent layer or the interelectrode constituent material layer consisting of the sintered luminescent layer and the sintered reflective layer. A distributed electroluminescent device characterized by being impregnated with a substance. 2. A transparent glass substrate having a transparent conductive film serving as a front electrode on one surface, and a light-emitting layer formed by dispersing and sintering phosphor powder in a dielectric material on the front electrode, or further the light-emitting layer. In a distributed electroluminescent device having a structure having a high dielectric constant insulating reflective layer provided thereon by sintering, and a back electrode made of the light emitting layer or a conductive metal layer provided on the reflective layer. , a two-layer film consisting of the light-emitting layer and the back electrode or a three-layer film consisting of the light-emitting layer, the reflective layer and the back electrode is formed on the front electrode side of the substrate with a peripheral exposed portion of a predetermined width left; A lid-like glass plate having a recess sufficient to cover the multi-layer film or three-layer film with some margin is placed over the two-layer film or three-layer film, and the end face of the side wall of the lid-like glass plate is exposed to the substrate. A layer of low-melting glass is used to adhere the material on the substrate, and a small groove provided in the side wall of the glass lid is inserted into the space formed between the substrate and the glass lid, and the material is harmless to the material between the electrodes. 1. A distributed electroluminescent device characterized in that a colorless or translucent high dielectric constant liquid material is injected to sufficiently impregnate the interelectrode material and then the small grooves are sealed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2040980A JPS56118292A (en) | 1980-02-22 | 1980-02-22 | Dispersion type electric field light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2040980A JPS56118292A (en) | 1980-02-22 | 1980-02-22 | Dispersion type electric field light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56118292A JPS56118292A (en) | 1981-09-17 |
| JPS6238838B2 true JPS6238838B2 (en) | 1987-08-19 |
Family
ID=12026230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2040980A Granted JPS56118292A (en) | 1980-02-22 | 1980-02-22 | Dispersion type electric field light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56118292A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62109395U (en) * | 1985-12-27 | 1987-07-13 | ||
| JPH05121169A (en) * | 1991-10-24 | 1993-05-18 | Nippon Seiki Co Ltd | Organic dispersion type electroluminescent device |
-
1980
- 1980-02-22 JP JP2040980A patent/JPS56118292A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56118292A (en) | 1981-09-17 |
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