JPS6247115A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6247115A JPS6247115A JP18787885A JP18787885A JPS6247115A JP S6247115 A JPS6247115 A JP S6247115A JP 18787885 A JP18787885 A JP 18787885A JP 18787885 A JP18787885 A JP 18787885A JP S6247115 A JPS6247115 A JP S6247115A
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- semiconductor device
- semiconductor substrate
- manufacturing
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、絶縁体上に形成された多結晶または非晶質
の半導体層を連続発振のレーザ光で走査しなか＋； 溶
融することにより小結晶化させる工程を含む半導体装置
の製造方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to scanning a polycrystalline or amorphous semiconductor layer formed on an insulator with a continuous wave laser beam; The present invention relates to a method of manufacturing a semiconductor device including a step of crystallizing into small crystals.
第２図は従来の半導体装置の製造方法を示す模式図であ
り、図においζ、（１１）はレーザ尤発振器、（１２）
はレーザ光発振器（１１）から発振されたレーザ光、（
１３）はレーザ光（１２）の光路を変更する鏡、（１４
）はレーザ光（１２）を集光する集光レンズ、（１５）
は絶縁体上に形成された多結晶または非晶質の半導体層
でなる半導体基板、（１６）は半導体基板（１５）を支
持し適当な温度に加熱する支持台、（１７）は集光レン
ズ（１４）によるレーザ光（１２）の焦点位置である。FIG. 2 is a schematic diagram showing a conventional method of manufacturing a semiconductor device. In the figure, ζ, (11) is a laser oscillator, and (12)
is the laser beam oscillated from the laser beam oscillator (11), (
13) is a mirror that changes the optical path of the laser beam (12);
) is a condensing lens that condenses the laser beam (12), (15)
is a semiconductor substrate made of a polycrystalline or amorphous semiconductor layer formed on an insulator, (16) is a support stand that supports the semiconductor substrate (15) and heats it to an appropriate temperature, and (17) is a condenser lens. (14) is the focal position of the laser beam (12).
次に動作について説明する。レーザ光発振器（１１）か
ら発振された［−ナラ状のレーザ光（１２）は鏡（１３
）などを介し°Ｃ導かれ、集光レンズ（１４）により集
光され、支持台（１６）によって４００℃程度に加熱さ
れた半導体基板（１５）に照射される。支持台（１６）
は、第２図中の矢印の方向に数ｃＩ１１〜数１０ｃ１１
１／ｓｅｃの速度で走査される。この場合、レーザ光（
１２）は集光レンズ（１４）により半導体基板（１５）
上のイ、ｃ＋＋点ｆ１ン置（１７）で焦点を結び、直径
数１０μｍのビーｊ＝ Ｊなる。Next, the operation will be explained. The [-narrow-shaped laser beam (12) oscillated from the laser beam oscillator (11) is reflected by the mirror (13).
), etc., is focused by a condenser lens (14), and is irradiated onto a semiconductor substrate (15) heated to about 400°C by a support stand (16). Support stand (16)
is a number cI11 to a number 10c11 in the direction of the arrow in FIG.
Scanning is performed at a speed of 1/sec. In this case, the laser beam (
12) is a semiconductor substrate (15) using a condensing lens (14).
A above, the focus is established at point c++ at point f1 (17), and the beam j=J has a diameter of several tens of micrometers.
次にｆｉｔ結晶化の機構について説明する。絶縁体上１
の多結晶またはノ］−品質の゛１′導体層十には、同化
再結晶化の際に多結晶シリニ１ン中の横方向の温）１分
布を形成するために反射ジノ＋Ｌ： ｎ’ｉをストライ
ブ状にパターニングしておくなとの方法が用いられてい
る。これらの反１・１防止膜にょっ゛Ｃ多結晶シリコン
中に吸収されるシー４フ’光（１２）のパワーは調整す
れ、多結晶シリコンは）８融再結晶化し大結晶粒に成長
する。Next, the mechanism of fit crystallization will be explained. Insulator top 1
In the polycrystalline or n'-quality conductor layer 10, a reflective diode+L: n' is applied to form a lateral temperature distribution in the polycrystalline silicon layer during assimilation recrystallization. A method is used in which i is patterned in stripes. The power of the 4F light (12) absorbed into the anti-1.1 film is adjusted, and the polycrystalline silicon recrystallizes and grows into large crystal grains. .
〔発明が解決し７ようとする問題点〕
従来の半導体装置の製造方法は、レーザ光（１２）をレ
ンズ山）に上ゲで集光しその焦点位置（１７）が１６導
体基板（１５）上にあるように構成されていたので、レ
ーザ光発振器（１１）から発振したレーリ′光の強度分
布はガラス型であり、半導体基板（１５）に照射される
し・−ザ光（１２）の強度分布もガｌ’７ス型になって
いノこ。このため、半導体層−にに反射防１１」９を設
けて半導体層の横方向の温度分布を制御し、１、うとし
でも、レーザ光（１２）自体にガウス型の強度分布があ
り、そのため半導体層−Ｌに所定の温度分布が形成され
ないという問題点があった。[Problems to be Solved by the Invention] In the conventional manufacturing method of semiconductor devices, the laser beam (12) is focused on the lens crest using an upper beam, and the focal point position (17) is placed on the 16-conductor substrate (15). Since the laser light oscillator (11) was configured as shown in FIG. The distribution is also Gallus-shaped. For this reason, an anti-reflection layer 11'9 is provided on the semiconductor layer to control the lateral temperature distribution of the semiconductor layer. There was a problem that a predetermined temperature distribution was not formed in layer-L.
この発明は−に記のような問題点を解消するためになさ
れたもので、半導体層上の反射防止膜によって所望の温
度分布を得ることができる半導体装置の製造方法を得る
ことを目的とする。This invention was made in order to solve the problems mentioned in -, and aims to provide a method for manufacturing a semiconductor device that can obtain a desired temperature distribution with an antireflection film on a semiconductor layer. .
この発明に係る半導体装置の製造方法は、レーザ光の焦
点位置を半導体基板の表面からずらずようにしたもので
ある。The method for manufacturing a semiconductor device according to the present invention is such that the focal position of the laser beam is not shifted from the surface of the semiconductor substrate.
この発明におけるレーザ光の強度分布は、レーザ光の焦
点位置が半導体基板の表面からずれたことによってガウ
ス型からはずれ、平坦な強度分布になる。The intensity distribution of the laser beam in this invention deviates from the Gaussian shape due to the focal position of the laser beam being shifted from the surface of the semiconductor substrate, and becomes a flat intensity distribution.
以下、この発明の一実施例を図について説明する。第１
図において、（１１）はレーザ光発振器、（１２）はレ
ーザ光、（］３）は鏡、（Ｊ４）は集光レンズ、（１５
）は半導体基板、（１６）は半導体基板（１５）を支持
し加熱する支持台、（１７）は集光レンズ（１４）にょ
るレーザ光（１２）の焦点位置である。An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, (11) is a laser beam oscillator, (12) is a laser beam, (]3) is a mirror, (J4) is a condensing lens, (15)
) is a semiconductor substrate, (16) is a support base that supports and heats the semiconductor substrate (15), and (17) is the focal position of the laser beam (12) on the condenser lens (14).
次に、動作につい°Ｃ説明する。レーザ発振器（１１）
から発振されたガウス型の強度分布を持っレーザ光（１
２）は鏡（１３）によって曲げられ、集光レンズ（１４
）に入射する。レーザ光（１２）は集光レンズ（１４）
を通過した後に支持台（１６）によって５ｏｏ℃程度に
加熱された半導体基板（１５）に照射される。この場合
、レーザ光（１２）の集光レンズ（１４）による焦点付
Ｗ（１７）は半導体基板（１５）の手前にくるように調
節されている。支持台（１６）は第１図に示された矢印
の方向に速度数〜数１０ｃｏ＋／ｓｅｅで走査される。Next, the operation will be explained. Laser oscillator (11)
Laser light (1
2) is bent by a mirror (13) and a condensing lens (14
). The laser beam (12) is transmitted through a condensing lens (14)
After passing through, the semiconductor substrate (15) heated to about 50° C. is irradiated by the support stand (16). In this case, the focusing W (17) of the laser beam (12) by the condensing lens (14) is adjusted to be in front of the semiconductor substrate (15). The support platform (16) is scanned in the direction of the arrow shown in FIG. 1 at a speed of several tens of co+/see.
通常、レーザ光は、波長の異なった光を多数含んでおり
、レーザ光がアルゴンレーザの場合、その発振光は主に
５１４５人と４８８０人との波長の光である。Normally, laser light contains many lights with different wavelengths, and when the laser light is an argon laser, the oscillated light is mainly light with a wavelength of 5145 and 4880.
このようにレーザ光（１２）は波長の異なった光によっ
て構成されているため、集光レンズ（１４）によるそれ
ぞれの焦点位置は異なる。したがって、焦点位置（１７
）を半導体基板（１５）から離しておくと、波長の異な
ったレーザ光はそれぞれ別の位置に強度分布を持つよう
になり、レーザ光（１２）の強度分布はガウス型でなく
なって平坦な強度分布となる。In this way, since the laser beam (12) is composed of lights of different wavelengths, the respective focal positions by the condenser lens (14) are different. Therefore, the focal position (17
) is kept away from the semiconductor substrate (15), the laser beams with different wavelengths will have intensity distributions at different positions, and the intensity distribution of the laser beam (12) will no longer be Gaussian, but will have a flat intensity distribution. distribution.
これにより、半導体層−１−に設けられた反射防１ト膜
により半導体層上で所望の横方向の温度分布が容易に得
られ、多結晶半導体は固化再結晶化の際に大結晶粒に成
長する。As a result, a desired lateral temperature distribution can be easily obtained on the semiconductor layer by the anti-reflection film provided on the semiconductor layer-1-, and the polycrystalline semiconductor becomes large crystal grains during solidification and recrystallization. grow up.
なお、上記実施例ではレーザ光（１２）の集光レンズ（
１４）による焦点位置（１７）が半導体基板（１５）よ
り手前にあるものとしたが、焦点付１ｔｆ（１７）が半
導体基板（１５）より後側にあっても上記実施例と同様
の効果を奏する。In addition, in the above embodiment, the condensing lens (
14) is assumed to be in front of the semiconductor substrate (15), but even if the focused 1tf (17) is behind the semiconductor substrate (15), the same effect as in the above embodiment can be obtained. play.
以上のように、この発明によれば、集光レンズによるレ
ーザ光の焦点位置を半導体基板より離しておくように構
成したので、レーザ光の強度分布が平坦になり、その結
果、反射防止膜等により絶縁体上の半導体層の温度分布
制御が容易になり、大結晶粒の半導体層が得られる効果
がある。As described above, according to the present invention, since the focal position of the laser beam by the condensing lens is kept away from the semiconductor substrate, the intensity distribution of the laser beam becomes flat, and as a result, the anti-reflection film, etc. This makes it easier to control the temperature distribution of the semiconductor layer on the insulator, and has the effect of obtaining a semiconductor layer with large crystal grains.
第１図はこの発明の一実施例による半導体装置の製造方
法を示す模式図、第２図は従来の半導体装置の製造方法
を示す模式図である。
（１１）はレーザ光発振器、（１２）はレーザ光、（１
３）は鏡、（１４）はレンズ、（１５）は半導体基板、
（１６）は支持台、（１７）は焦点位置。
なお、図中、同−符月は同一または相当部分を示す。FIG. 1 is a schematic diagram showing a method for manufacturing a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a schematic diagram showing a conventional method for manufacturing a semiconductor device. (11) is a laser beam oscillator, (12) is a laser beam, (1
3) is a mirror, (14) is a lens, (15) is a semiconductor substrate,
(16) is the support stand, and (17) is the focal position. In addition, in the figure, the same - month sign indicates the same or equivalent part.
Claims (2)
体層をレーザ光によって溶融し再結晶化する工程を含む
半導体装置の製造方法において、上記レーザ光をレンズ
により集光させて上記多結晶または非晶質の半導体層に
照射する際に、上記レンズによる上記レーザ光の焦点位
置が上記多結晶または非晶質の半導体層上にないことを
特徴とする半導体装置の製造方法。(1) A method for manufacturing a semiconductor device including a step of melting and recrystallizing a polycrystalline or amorphous semiconductor layer formed on an insulator using a laser beam, in which the laser beam is focused by a lens to A method for manufacturing a semiconductor device, characterized in that when irradiating a polycrystalline or amorphous semiconductor layer, the focal position of the laser beam by the lens is not on the polycrystalline or amorphous semiconductor layer.
用したことを特徴とする特許請求の範囲の第１項記載の
半導体装置の製造方法。(2) The method for manufacturing a semiconductor device according to claim 1, wherein a continuous wave argon laser beam is used as the laser beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18787885A JPS6247115A (en) | 1985-08-26 | 1985-08-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18787885A JPS6247115A (en) | 1985-08-26 | 1985-08-26 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6247115A true JPS6247115A (en) | 1987-02-28 |
Family
ID=16213784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18787885A Pending JPS6247115A (en) | 1985-08-26 | 1985-08-26 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6247115A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745921A (en) * | 1980-09-02 | 1982-03-16 | Fujitsu Ltd | Forming method for semiconductor single crystal layer formed with laser irradiation |
| JPS5873112A (en) * | 1981-10-28 | 1983-05-02 | Nippon Hoso Kyokai <Nhk> | Laser annealing |
| JPS5984423A (en) * | 1982-11-04 | 1984-05-16 | Matsushita Electric Ind Co Ltd | Energy radiation equipment |
| JPS6089915A (en) * | 1983-10-21 | 1985-05-20 | Sony Corp | Preparation of semiconductor thin film |
-
1985
- 1985-08-26 JP JP18787885A patent/JPS6247115A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745921A (en) * | 1980-09-02 | 1982-03-16 | Fujitsu Ltd | Forming method for semiconductor single crystal layer formed with laser irradiation |
| JPS5873112A (en) * | 1981-10-28 | 1983-05-02 | Nippon Hoso Kyokai <Nhk> | Laser annealing |
| JPS5984423A (en) * | 1982-11-04 | 1984-05-16 | Matsushita Electric Ind Co Ltd | Energy radiation equipment |
| JPS6089915A (en) * | 1983-10-21 | 1985-05-20 | Sony Corp | Preparation of semiconductor thin film |
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